Digital Integrated Circuits. Inverter. YuZhuo Fu. Digital IC. Introduction
|
|
|
- Clare Short
- 6 years ago
- Views:
Transcription
1 Digital Itegrated Circuits Iverter YuZhuo Fu Itroductio
2 outlie CMOS at a glace CMOS static behavior CMOS dyamic behavior Power, Eergy, ad Eergy Delay Persective tech. /48
3 outlie CMOS at a glace CMOS static behavior CMOS dyamic behavior Power, Eergy, ad Eergy Delay Persective tech. 3/48
4 A trasistor Activity 1 If the width icreases, the curret will icrease decrease ot chage If the legth icreases, the curret will icrease decrease ot chage 3 If the suly voltage icreases, the maximum trasistor curret will icrease decrease ot chage 4 If the width icreases, its gate caacitace will icrease decrease ot chage 5 If the legth icreases, its gate caacitace will icrease decrease ot chage 6 If the suly voltage, the gate caacitace of each trasistor will icrease decrease ot chage 4/48
5 A trasistor Activity 1 If the width icreases, the curret will icrease decrease ot chage If the legth icreases, the curret will icrease decrease ot chage 3 If the suly voltage icreases, the maximum trasistor curret will icrease decrease ot chage 4 If the width icreases, its gate caacitace will icrease decrease ot chage 5 If the legth icreases, its gate caacitace will icrease decrease ot chage 6 If the suly voltage, the gate caacitace of each trasistor will icrease decrease ot chage 5/48
6 CMOS Iverter DD N Well DD PMOS l PMOS Cotacts I Out I Out Metal 1 NMOS Polysilico NMOS GND 6/48
7 A First Glace of CMOS A switch with ifiite off-resistace ad a fiite oresistace Whe gs < t,mos is off whe gs > t,mos is o just like a resistace R o whe i dd,mos o,mos off Whe i 0,MOS off,mos o GS R o GS < T GS > T 7
8 CMOS Iverter First-Order DC Aalysis DD DD R OL 0 OH DD out M f(r, R out R i DD i 0 8/48
9 CMOS Iverter: Trasiet Resose DD DD R t HL f(r o.c L 0.69 R o C L out out C L C L R i 0 (a Low-to-high i DD (b High-to-low 9/48
10 DC Resose Whe 0 > i out DD Whe DD > 0 i out I betwee, deeds o trasistor size ad out curret By KCL, must settle such that I I ds ds DD I ds We could solve equatios,but i out grahical solutio gives more isight I ds 10/48
11 Trasistor Oeratio For what ad are MOS ad i out MOS i Cutoff? Liear? Saturatio? 11/48
12 MOS Oeratio Cutoff Liear Saturated gs < gs > gs > ds < ds > DD I ds i out I ds 1/48
13 MOS Oeratio Cutoff Liear Saturated gs < t gs > t gs > t ds < gs t ds > gs t DD i I ds out I ds 13/48
14 MOS Oeratio Cutoff Liear Saturated gs < t gs > t gs > t ds < gs t ds > gs t DD I ds gs i i out ds out I ds 14/48
15 MOS Oeratio Cutoff Liear Saturated gs < t gs > t gs > t i < t i > t i > t ds < gs t ds > gs t out < i - t out > i - t DD I ds i out gs i I ds ds out 15/48
16 MOS Oeratio Cutoff Liear Saturated gs > gs < ds > gs < ds < DD I ds i out I ds 16/48
17 MOS Oeratio Cutoff Liear Saturated gs > t gs < t gs < t ds > gs t ds < gs t DD I ds i out I ds 17/48
18 MOS Oeratio Cutoff Liear Saturated gs > t gs < t gs < t ds > gs t ds < gs t DD - < 0 gs i DD t - ds out DD i I ds I ds out 18/48
19 MOS Oeratio Cutoff Liear Saturated gs > t gs < t gs < t i > DD t i < DD t i < DD t ds > gs t ds < gs t out > i - t out < i - t gs i - DD DD ds out - DD t < 0 I ds i out I ds 19/48
20 CMOS roerties High oise margis, the voltage swig is equal to the suly voltage Ratioless circuit structure Low outut imedace High iut resistace Low ower 0/48
21 PMOS Load Lies I D i DD GS I D - I D out DD DS out I D I D I D i 0 i 0 i 1.5 i 1.5 DS DS out GS -1 GS -.5 i DD GS out DD DS I D - I D 1/48
22 CMOS Iverter Load Characteristics I D i 0 i.5 PMOS i 0.5 i NMOS i 1 i 1.5 i 1.5 i 1 i 1.5 i 1 i i 0.5 i.5 i 0 out /48
23 CMOS Iverter TC Summary of CMOS iverter oeratio Regio Coditio P-device N-device outut A [0,t] liear cutoff DD B [t,dd/] liear saturated DD/ C DD/ saturated saturated X dro D [DD/,DD- TP ] saturated liear <DD/ E [DD- TP, DD] cutoff liear 0 3/48
24 TTL NAND 4/48
25 Other iverters 5/48
26 outlie CMOS at a glace CMOS static behavior CMOS dyamic behavior Power, Eergy, ad Eergy Delay Persective tech. 6/48
27 CMOS static behavior CMOS threshold voltage CMOS oise margi CMOS gai DC robust 7/48
28 CMOS static behavior CMOS threshold voltage CMOS oise margi CMOS gai DC robust 8/48
29 Switchig Threshold as a fuctio of Trasistor Ratio 0 ( ( T DD M T M k k sat sat T DD T M W v W v k k r r r 1 ( ( 1 r r DD M ( ( ( ( ' ' T M DD T M k k L W L W 9 SAT c Lv L GT µ ξ ( T GS ox sat T GS ox D W C v L W C I µ
30 Switchig threshold of CMOS iverter Assumig W /W 8, calculatig M? k ' W r L 30*( 1 *8 3.3 k ' W 115*0.63 L ( r ( T DD T M 1 r ( ( * /48
31 Switchig threshold of CMOS iverter ( W L k ' ( M T ( ( W L k ' ( ( DD M T This rate let M dd /! 31/48
32 Switchig Threshold as a fuctio of Trasistor Ratio M is relatively isesitive to variatios i the device ratio Icreasig the width of the PMOS or NMOS moves M toward DD or GND 1.4 M (3, 1. (.5, 1.18 (, W/W 3/48
33 CMOS static behavior CMOS threshold voltage CMOS oise margi CMOS gai DC robust 33/48
34 Noise Margi NM L The differece i maximum LOW iut voltage recogized by the receivig gate ad the maximum LOW outut voltage roduced by the drivig gate NM L IL - OL NM H The differece i miimum HIGH iut voltage recogized by the receivig gate ad the miimum HIGH outut voltage roduced by the drivig gate NM H OH - IH 34/48
35 Noise Margi IHmiimum HIGH iut voltage ILmaximum LOW iut voltage OHmiimum HIGH outut voltage OLmaximum LOW outut voltage Outut Characteristics Iut Characteristics DD Logical High Outut Rage OH NM H Logical High Iut Rage IH IL Idetermiate Regio Logical Low Outut Rage OL NM L GND Logical Low Iut Rage 35/48
36 Determiig IH ad IL 36/48
37 Determiig IH ad IL out A simlified aroach! OH ( OH OL DD IH IL g g M, DD M M IH M g IL M g NM, NM H DD IH L IL i OL IL IH 37/48
38 Determiig IH ad IL i out OH t out M i t OL IL IH 38/48
39 Examle g-30, dd.5, M 1.0 Please estimate NM H ad NM L IH M - M /G1.0*(11/ IL ( DD - M /G M -1.5/ NM H OH - IH NM L IL - OL /48
40 CMOS static behavior CMOS threshold voltage CMOS oise margi CMOS gai DC robust 40/48
41 i ( gai Iverter Gai ( ( 1 ( 1 ( ( (1 (1 T M T M T DD i T i DD out out i out M i k k k k k k k d d g λ λ γ λ λ λ λ λ λ λ 41/48 0 ( (1 ( (1 ( out DD T DD i out T i k k λ λ
42 A examle Assume a iverter i the geeric 0.5um CMOS techology desiged with a PMOS-to-NMOS ratio of 3.4 ad with the NMOS trasistor miimum size (W0.375um, L0.5um,W/L1.5,Please give the gai of, ad,,nm,nm, TC curve M IL IH L H 4/48
43 A examle:iverter Gai I ( k ( (1 λ D M M T out ( ( A 0.5 g 1 k k I ( λ λ D M The gai is almost urely determied by techology arameters! 43/48
44 A examle : oise margi G-M/(IH-M IHM-M/G1.5*(11/ G-(DD-M/(M-IL IL(DD-M/GM-1.5/ NMHOH-IH NMLIL-OL1. Simulated valued IL1.03 out OH IH1.45 M Gai is overestimated i Liear aroximatio of TC OL IL IH 44/48
45 CMOS static behavior CMOS threshold voltage CMOS oise margi CMOS gai DC robust 45/48
46 Imact of Process ariatios The variatios of device maily cause a.5 shift i the switchig threshold, this robust behavior esures fuctioality of the gate over a wide rage of coditios Good PMOS Bad NMOS out ( Good NMOS Bad PMOS Nomial i ( 46/48
47 Trasfer characteristics of skewed iverter uskewed HI-Skewed LOW-Skewed 47/48
48 Gai as a fuctio of DD kt > ~ 4 ~ 4 5m DD mi q out ( % out ( % Gai i ( i ( 1 γ g Low ower voltage is useful! ( ( λ λ But ot too low M T 48/48
Digital Integrated Circuits
Digital Itegrated Circuits YuZhuo Fu cotact:fuyuzhuo@ic.sjtu.edu.c Office locatio:417 room WeiDiaZi buildig,no 800 DogChua road,mihag Camus Itroductio outlie CMOS at a glace CMOS static behavior CMOS dyamic
YuZhuo Fu Office location:417 room WeiDianZi building,no 800 DongChuan road,minhang Campus
Digital Itegrated Circuits YuZhuo Fu cotact:fuyuzhuo@ic.sjtu.edu.c Office locatio:417 room WeiDiaZi buildig,no 800 DogChua road,mihag Camus Itroductio Digital IC outlie CMOS at a glace CMOS static behavior
Digital Integrated Circuits
Digital Itegrated Circuits YuZhuo Fu cotact:fuyuzhuo@ic.sjtu.edu.c Office locatio:417 room WeiDiaZi buildig,no 800 DogChua road,mihag Camus Itroductio Review cotet Tye Cocet 15, Comutig 10 hours Fri. 6
EEC 118 Lecture #4: CMOS Inverters. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #4: CMOS Iverters ajeeva Amirtharajah Uiversity of Califoria, Davis Jeff Parhurst Itel Cororatio Outlie eview: Iverter Trasfer Characteristics Lecture 3: Noise Margis, ise & Fall Times,
Regenerative Property
DESIGN OF LOGIC FAMILIES Some desirable characteristics to have: 1. Low ower dissiatio. High oise margi (Equal high ad low margis) 3. High seed 4. Low area 5. Low outut resistace 6. High iut resistace
MORE TUTORIALS FOR VERILOG DIGITAL ELECTRONICS SYSTEM DESIGN HOMEWORK ASSIGNMENTS DATASHEETS FOR PARTS 10/3/2018
//8 DIGITA EECTRONICS SYSTEM DESIGN FA 8 PROFS. IRIS BAHAR & ROD BERESFORD OCTOBER, 8 ECTURE 9: CMOS TRANSIENT BEHAIOR MORE TUTORIAS FOR ERIOG O the course website you ca fid some useful liks to additioal
DATASHEETS FOR PARTS DIGITAL ELECTRONICS SYSTEM DESIGN NMOS I-V SUMMARY EXAM SCHEDULE 10/5/2018. cutoff V V. linear.
//8 IGIT EECTRONICS SYSTEM ESIGN F 8 PROFS. IRIS HR & RO ERESFOR OCTOER, 8 ECTURE : CMOS TRNSIENT EHIOR TSHEETS FOR PRTS ll arts rovided for you i our kits come with datasheets Pi layout i ackage Schematic
LECTURE 5 PART 2 MOS INVERTERS STATIC DESIGN CMOS. CMOS STATIC PARAMETERS The Inverter Circuit and Operating Regions
LECTURE 5 PART 2 MOS INVERTERS STATIC ESIGN CMOS Objectives for Lecture 5 - Part 2* Uderstad the VTC of a CMOS iverter. Uderstad static aalysis of the CMOS iverter icludig breakpoits, VOL, V OH,, V IH,
CMOS Inverter (static view)
Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:
Minimum Source/Drain Area AS,AD = (0.48µm)(0.60µm) - (0.12µm)(0.12µm) = µm 2
UNIERSITY OF CALIFORNIA College of Egieerig Departmet of Electrical Egieerig ad Computer Scieces Last modified o February 1 st, 005 by Chris Baer (crbaer@eecs Adrei ladimirescu Homewor #3 EECS141 Due Friday,
CMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)
CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF ALIFORNIA, BERELEY ollege of Egieerig Deartmet of Electrical Egieerig ad omuter Scieces Ja M. Rabaey Homework #5 EES 4 SP0) [PROBLEM Elmore Delay 30ts) Due Friday, March 5, 5m, box i 40 ory
ENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view)
ENGR89 Digital VLSI Design Fall 5 Lecture 4: CMOS Inverter (static view) [Adapted from Chapter 5 of Digital Integrated Circuits, 3, J. Rabaey et al.] [Also borrowed from Vijay Narayanan and Mary Jane Irwin]
Lecture #25. Amplifier Types
ecture #5 Midterm # formatio ate: Moday November 3 rd oics to be covered: caacitors ad iductors 1 st -order circuits (trasiet resose) semicoductor material roerties juctios & their alicatios MOSFEs; commo-source
CMOS. Dynamic Logic Circuits. Chapter 9. Digital Integrated Circuits Analysis and Design
MOS Digital Itegrated ircuits Aalysis ad Desig hapter 9 Dyamic Logic ircuits 1 Itroductio Static logic circuit Output correspodig to the iput voltage after a certai time delay Preservig its output level
DC and Transient Responses (i.e. delay) (some comments on power too!)
DC and Transient Responses (i.e. delay) (some comments on power too!) Michael Niemier (Some slides based on lecture notes by David Harris) 1 Lecture 02 - CMOS Transistor Theory & the Effects of Scaling
EEE 421 VLSI Circuits
EEE 421 CMOS Properties Full rail-to-rail swing high noise margins» Logic levels not dependent upon the relative device sizes transistors can be minimum size ratioless Always a path to V dd or GND in steady
Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS
Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS Outline NMOS inverter with resistor pull-up The inverter NMOS inverter with current-source pull-up Complementary MOS (CMOS) inverter Static analysis
THE INVERTER. Inverter
THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)
DC & Transient Responses
ECEN454 Digital Integrated Circuit Design DC & Transient Responses ECEN 454 DC Response DC Response: vs. for a gate Ex: Inverter When = -> = When = -> = In between, depends on transistor size and current
Monolithic semiconductor technology
Moolithic semicoductor techology 1 Ageda Semicoductor techology: Backgroud o Silico ad Gallium Arseide (GaAs) roerties. Diode, BJT ad FET devices. Secod order effect ad High frequecy roerties. Modelig
EEC 116 Lecture #3: CMOS Inverters MOS Scaling. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 116 Lecture #3: CMOS Inverters MOS Scaling Rajeevan Amirtharajah University of California, Davis Jeff Parhurst Intel Corporation Outline Review: Inverter Transfer Characteristics Lecture 3: Noise Margins,
2.CMOS Transistor Theory
CMOS LSI esig.cmos rasistor heory Fu yuzhuo School of microelectroics,sju Itroductio omar fadhil,baghdad outlie PN juctio priciple CMOS trasistor itroductio Ideal I- characteristics uder static coditios
VLSI Design and Simulation
VLSI Design and Simulation CMOS Inverters Topics Inverter VTC Noise Margin Static Load Inverters CMOS Inverter First-Order DC Analysis R p V OL = 0 V OH = R n =0 = CMOS Inverter: Transient Response R p
Lecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor
Lecture 4: DC & Transient Response
Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response David Harris Harvey Mudd College Spring 004 Outline DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Slide
Lecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay Estimation 2 Pass Transistors We have assumed source is grounded
Lecture 12 Circuits numériques (II)
Lecture 12 Circuits numériques (II) Circuits inverseurs MOS Outline NMOS inverter with resistor pull-up The inverter NMOS inverter with current-source pull-up Complementary MOS (CMOS) inverter Static analysis
Parasitic Resistance L R W. Polysilicon gate. Drain. contact L D. V GS,eff R S R D. Drain
Parasitic Resistace G Polysilico gate rai cotact V GS,eff S R S R S, R S, R + R C rai Short Chael Effects Chael-egth Modulatio Equatio k ( V V ) GS T suggests that the trasistor i the saturatio mode acts
ECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter
ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.
Lecture 6: DC & Transient Response
Lecture 6: DC & Transient Response Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline Pass Transistors DC Response Logic Levels and Noise Margins
EE5780 Advanced VLSI CAD
EE5780 Advanced VLSI CAD Lecture 4 DC and Transient Responses, Circuit Delays Zhuo Feng 4.1 Outline Pass Transistors DC Response Logic Levels and Noise Margins Transient Response RC Delay Models Delay
ECE 546 Lecture 10 MOS Transistors
ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor N-Channel MOSFET Built on p-type
CMOS INVERTER. Last Lecture. Metrics for qualifying digital circuits. »Cost» Reliability» Speed (delay)»performance
CMOS INVERTER Last Lecture Metrics for qualifying digital circuits»cost» Reliability» Speed (delay)»performance 1 Today s lecture The CMOS inverter at a glance An MOS transistor model for manual analysis
MOS Transistor Theory
CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal I-V Characteristics 3. Nonideal I-V Effects 4. C-V Characteristics 5. DC Transfer Characteristics 6. Switch-level RC Delay Models MOS
Digital Integrated Circuits
Chapter 6 The CMOS Inverter 1 Contents Introduction (MOST models) 0, 1 st, 2 nd order The CMOS inverter : The static behavior: o DC transfer characteristics, o Short-circuit current The CMOS inverter :
Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. March 20, 2003
6.012 Microelectronic Devices and Circuits Spring 2003 Lecture 131 Lecture 13 Digital Circuits (II) MOS Inverter Circuits March 20, 2003 Contents: 1. NMOS inverter with resistor pullup (cont.) 2. NMOS
Lecture 14 - Digital Circuits (III) CMOS. April 1, 2003
6.12 - Microelectronic Devices and Circuits - Spring 23 Lecture 14-1 Lecture 14 - Digital Circuits (III) CMOS April 1, 23 Contents: 1. Complementary MOS (CMOS) inverter: introduction 2. CMOS inverter:
Today s lecture. EE141- Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model
- Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next
EE 330 Lecture 36. Digital Circuits. Transfer Characteristics of the Inverter Pair One device sizing strategy Multiple-input gates
EE 330 Lecture 36 Digital Circuits Transfer Characteristics of the Inverter Pair One device sizing strategy Multiple-input gates Review from Last Time The basic logic gates It suffices to characterize
Introduction to Microelectronics
The iolar Juctio Trasistor Physical Structure of the iolar Trasistor Oeratio of the NPN Trasistor i the Active Mode Trasit Time ad Diffusio aacitace Ijectio fficiecy ad ase Trasort Factor The bers-moll
Experiments #6 & #7: The Operational Amplifier
EECS 40/4 Exerimets #6 & #7: The Oeratioal mlifier I. Objective The urose of these exerimets is to itroduce the most imortat of all aalog buildig blocks, the oeratioal amlifier ( o-am for short). This
CMOS Technology for Computer Architects
CMOS Technology for Computer Architects Recap Technology Trends Lecture 2: Transistor Inverter Iakovos Mavroidis Giorgos Passas Manolis Katevenis FORTH-ICS (University of Crete) 1 2 Recap Threshold Voltage
MOS Transistor Theory
MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 Introduction So far, we have treated transistors
P-MOS Device and CMOS Inverters
Lecture 23 P-MOS Device and CMOS Inverters A) P-MOS Device Structure and Oeration B) Relation of Current to t OX, µ V LIMIT C) CMOS Device Equations and Use D) CMOS Inverter V OUT vs. V IN E) CMOS Short
Lecture 9. NMOS Field Effect Transistor (NMOSFET or NFET)
ecture 9 MOS Field ffect Trasistor (MOSFT or FT) this lecture you will lear: The oeratio ad workig of the MOS trasistor A MOS aacitor with a hael otact ( Si) metal cotact Si Si GB B versio layer PSi substrate
DC and Transient. Courtesy of Dr. Daehyun Dr. Dr. Shmuel and Dr.
DC and Transient Courtesy of Dr. Daehyun Lim@WSU, Dr. Harris@HMC, Dr. Shmuel Wimer@BIU and Dr. Choi@PSU http://csce.uark.edu +1 (479) 575-604 yrpeng@uark.edu Pass Transistors We have assumed source is
Integrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 12 The CMOS Inverter: static behavior guntzel@inf.ufsc.br
Lecture 11 VTCs and Delay. No lab today, Mon., Tues. Labs restart next week. Midterm #1 Tues. Oct. 7 th, 6:30-8:00pm in 105 Northgate
EE4-Fall 2008 Digital Integrated Circuits Lecture VTCs and Delay Lecture # Announcements No lab today, Mon., Tues. Labs restart next week Midterm # Tues. Oct. 7 th, 6:30-8:00pm in 05 Northgate Exam is
5. CMOS Gate Characteristics CS755
5. CMOS Gate Characteristics Last module: CMOS Transistor theory This module: DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Transistor ehavior 1) If the width of a transistor
ESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 15: March 15, 2018 Euler Paths, Energy Basics and Optimization Midterm! Midterm " Mean: 89.7 " Standard Dev: 8.12 2 Lecture Outline! Euler
ESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 8: February 9, 016 MOS Inverter: Static Characteristics Lecture Outline! Voltage Transfer Characteristic (VTC) " Static Discipline Noise Margins!
Fig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NOR-gate C = NOT (A or B)
1 Introduction to Transistor-Level Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
Transistors - CPE213 - [4] Bipolar Junction Transistors. Bipolar Junction Transistors (BJTs) Modes of Operation
![Transistors - CPE213 - [4] Bipolar Junction Transistors. Bipolar Junction Transistors (BJTs) Modes of Operation](/thumbs/94/121304554.jpg "Transistors - CPE213 - [4] Bipolar Junction Transistors. Bipolar Junction Transistors (BJTs) Modes of Operation")
P1 lectroic evices for omuter gieerig [4] iolar Juctio Trasistors Trasistors Threetermial device otrolled source Fuctios Amlificatio Switchig Tyes iolar juctio trasistor (JT) Field effect trasistor (FT)
EE5311- Digital IC Design
EE5311- Digital IC Design Module 3 - The Inverter Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai September 6, 2017 Janakiraman, IITM
CD4070 CD4077 CMOS Quad Exclusive OR and Exclusive NOR Gates
CD7 CD77 CMOS Quad Exclusive OR ad Exclusive NOR Gates Features High Voltage Tyes (V Ratig) Piouts CD7BMS TOP VIEW CD7BMS - Quad Exclusive OR Gate CD77BMS - Quad Exclusive NOR Gate Medium Seed Oeratio
Midterm. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. Pass Transistor Logic. Restore Output.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 16: March 21, 2017 Transmission Gates, Euler Paths, Energy Basics Review Midterm! Midterm " Mean: 79.5 " Standard Dev: 14.5 2 Lecture Outline!
EE 434 Lecture 33. Logic Design
EE 434 Lecture 33 Logic Design Review from last time: Ask the inverter how it will interpret logic levels V IN V OUT V H =? V L =? V LARGE V H V L V H Review from last time: The two-inverter loop X Y X
and V DS V GS V T (the saturation region) I DS = k 2 (V GS V T )2 (1+ V DS )
ECE 4420 Spring 2005 Page 1 FINAL EXAMINATION NAME SCORE /100 Problem 1O 2 3 4 5 6 7 Sum Points INSTRUCTIONS: This exam is closed book. You are permitted four sheets of notes (three of which are your sheets
5.0 CMOS Inverter. W.Kucewicz VLSICirciuit Design 1
5.0 CMOS Inverter W.Kucewicz VLSICirciuit Design 1 Properties Switching Threshold Dynamic Behaviour Capacitance Propagation Delay nmos/pmos Ratio Power Consumption Contents W.Kucewicz VLSICirciuit Design
CPE/EE 427, CPE 527 VLSI Design I L06: CMOS Inverter, CMOS Logic Gates. Course Administration. CMOS Inverter: A First Look
CPE/EE 47, CPE 57 VLSI esign I L6: CMOS Inverter, CMOS Logic Gates epartment of Electrical and Computer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka )
MOSFET and CMOS Gate. Copy Right by Wentai Liu
MOSFET and CMOS Gate CMOS Inverter DC Analysis - Voltage Transfer Curve (VTC) Find (1) (2) (3) (4) (5) (6) V OH min, V V OL min, V V IH min, V V IL min, V OHmax OLmax IHmax ILmax NM L = V ILmax V OL max
Key Questions. ECE 340 Lecture 36 : MOSFET II 4/28/14
Thigs you should kow whe you leae C 40 Lecture 6 : MOSFT Class Outlie: Short Chael ffects Key Questios Why is the mobility i the chael lower tha i the bulk? Why do strog electric fields degrade chael mobility?
The CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD V in V out C L CMOS Properties Full rail-to-rail swing Symmetrical VTC Propagation delay function of load capacitance and resistance of transistors No static power
Quiz #3 Practice Problem Set
Name: Studet Number: ELEC 3908 Physical Electroics Quiz #3 Practice Problem Set? Miutes March 11, 2016 - No aids excet a o-rogrammable calculator - ll questios must be aswered - ll questios have equal
Lecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: CMOS Inverter: Visual VTC. Review: CMOS Inverter: Visual VTC
ESE 570: Digital Integrated Circuits and LSI Fundamentals Lec 0: February 4, 207 MOS Inverter: Dynamic Characteristics Lecture Outline! Review: Symmetric CMOS Inverter Design! Inverter Power! Dynamic Characteristics
Classification of DT signals
Comlex exoetial A discrete time sigal may be comlex valued I digital commuicatios comlex sigals arise aturally A comlex sigal may be rereseted i two forms: jarg { z( ) } { } z ( ) = Re { z ( )} + jim {
CMOS Inverter: CPE/EE 427, CPE 527 VLSI Design I L06: CMOS Inverter, CMOS Logic Gates. Course Administration. CMOS Properties.
CMOS Inverter: Steady State Response CPE/EE 47, CPE 57 VLSI esign I L6: CMOS Inverter, CMOS Logic Gates R p V OL = V OH = V M = f(r n, R p ) epartment of Electrical and Computer Engineering University
Miscellaneous Lecture topics. Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.]
![Miscellaneous Lecture topics. Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.]](/thumbs/81/84503671.jpg "Miscellaneous Lecture topics. Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.]")
Miscellaneous Lecture topics Mary Jane Irwin [dapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] MOS Switches MOS transistors can be viewed as simple switches. In an N-Switch, the
The CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD S D V in V out C L D S CMOS Inverter N Well V DD V DD PMOS 2λ PMOS Contacts In Out In Out Metal 1 NMOS Polysilicon NMOS GND CMOS Inverter: Steady State Response V
CHAPTER 15 CMOS DIGITAL LOGIC CIRCUITS
CHAPTER 5 CMOS DIGITAL LOGIC CIRCUITS Chapter Outline 5. CMOS Logic Gate Circuits 5. Digital Logic Inverters 5.3 The CMOS Inverter 5.4 Dynamic Operation of the CMOS Inverter 5.5 Transistor Sizing 5.6 Power
DATASHEET CD4030BMS. Features. Pinout. Functional Diagram. Applications. Description. CMOS Quad Exclusive-OR Gate. FN3305 Rev 0.
DATASHEET CD3BMS CMOS Quad Exclusive-OR Gate FN335 Rev. Features Piout High Voltage Tye (V Ratig) Medium-Seed Oeratio - tphl, tplh = 5s (ty) at =, CL = 5F CD3BMS TOP VIEW 1% Tested for Quiescet Curret
2007 Fall: Electronic Circuits 2 CHAPTER 10. Deog-Kyoon Jeong School of Electrical Engineering
007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits Deog-Kyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we
ESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2018 Final Monday, Apr 0 5 Problems with point weightings shown.
Name: Answers. Grade: Q1 Q2 Q3 Q4 Q5 Total. ESE370 Fall 2015
University of Pennsylvania Department of Electrical and System Engineering Circuit-Level Modeling, Design, and Optimization for Digital Systems ESE370, Fall 2015 Midterm 1 Monday, September 28 5 problems
EE415/515 Fundamentals of Semiconductor Devices Fall 2012
11/18/1 EE415/515 Fudametals of Semicoductor Devices Fall 1 ecture 16: PVs, PDs, & EDs Chater 14.1-14.6 Photo absortio Trasaret or oaque Photo eergy relatioshis c hc 1.4 m E E E i ev 11/18/1 ECE 415/515
High-to-Low Propagation Delay t PHL
High-to-Low Propagation Delay t PHL V IN switches instantly from low to high. Driver transistor (n-channel) immediately switches from cutoff to saturation; the p-channel pull-up switches from triode to
ECE321 Electronics I
ECE31 Electronics Lecture 1: CMOS nverter: Noise Margin & Delay Model Payman Zarkesh-Ha Office: ECE Bldg. 30B Office hours: Tuesday :00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 CMOS
VLSI Design Issues. ECE 410, Prof. F. Salem/Prof. A. Mason notes update
VLSI Design Issues Scaling/Moore s Law has limits due to the hysics of material. Now L (L=20nm??) affects tx delays (seed), noise, heat (ower consumtion) Scaling increases density of txs and requires more
Diode in electronic circuits. (+) (-) i D
iode i electroic circuits Symbolic reresetatio of a iode i circuits ode Cathode () (-) i ideal diode coducts the curret oly i oe directio rrow shows directio of the curret i circuit Positive olarity of
Integrated Circuit Design ELCT 701 (Winter 2017) Lecture 2: Resistive Load Inverter
1 Integrated Circuit Design ELCT 701 (Winter 017) Lecture : Resistive Load Inverter Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg Digital Inverters Introduction 3 Digital Inverter: Introduction
Important! EE141- Fall 2002 Lecture 5. CMOS Inverter MOS Transistor Model
- Fall 00 Lecture 5 CMO Inverter MO Transistor Model Important! Lab 3 this week You must show up in one of the lab sessions this week If you don t show up you will be dropped from the class» Unless you
Digital Integrated Circuits Designing Combinational Logic Circuits. Fuyuzhuo
Digital Integrated Circuits Designing Combinational Logic Circuits Fuyuzhuo Introduction Digital IC Dynamic Logic Introduction Digital IC EE141 2 Dynamic logic outline Dynamic logic principle Dynamic logic
MOS Inverters. Digital Electronics - INEL Prof. Manuel Jiménez. With contributions by: Rafael A. Arce Nazario
MOS Inverters igital Electronics - INE 407 Prof. Manuel Jiménez With contributions by: Rafael A. Arce Nazario Objectives: Introduce MOS Inverter Styles Resistor oad Enhancement oad Saturated / ear epletion
Digital Integrated Circuits A Design Perspective
Digital Integrated Circuits Design Perspective Designing Combinational Logic Circuits Fuyuzhuo School of Microelectronics,SJTU Introduction Digital IC Dynamic Logic Introduction Digital IC 2 EE141 Dynamic
Answer: 1(A); 2(C); 3(A); 4(D); 5(B); 6(A); 7(C); 8(C); 9(A); 10(A); 11(A); 12(C); 13(C)
Aswer: (A); (C); 3(A); 4(D); 5(B); 6(A); 7(C); 8(C); 9(A); 0(A); (A); (C); 3(C). A two loop positio cotrol system is show below R(s) Y(s) + + s(s +) - - s The gai of the Tacho-geerator iflueces maily the
Digital Integrated Circuits A Design Perspective
igital Integrated Circuits esign Perspective esigning Combinational Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic Circuit Out In Combinational Logic Circuit Out State Combinational
EEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 8 Lecture #5: CMOS Inverter AC Characteristics Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Acknowledgments Slides due to Rajit Manohar from ECE 547 Advanced
Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. The Devices. July 30, Devices.
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The July 30, 2002 1 Goal of this chapter Present intuitive understanding of device operation Introduction
EE C245 - ME C218 Introduction to MEMS Design Fall Today s Lecture
EE C45 ME C8 Itroductio to MEMS Desig Fall 003 Roger Howe ad Thara Sriiasa Lecture 3 Capacitie Positio Sesig: Electroic ad Mechaical Noise EE C45 ME C8 Fall 003 Lecture 3 Today s Lecture Basic CMOS buffer
Topic 4. The CMOS Inverter
Topic 4 The CMOS Inverter Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Topic 4-1 Noise in Digital Integrated
CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 07: Pass Transistor Logic
CMPEN 411 VLSI Digital Circuits Spring 2011 Lecture 07: Pass Transistor Logic [dapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey,. Chandrakasan,. Nikolic] Sp11 CMPEN 411
NTE4501 Integrated Circuit CMOS, Dual 4 Input NAND Gate, 2 Input NOR/OR Gate, 8 Input AND/NAND Gate
NTE4501 Integrated Circuit CMOS, Dual 4 Input NAND Gate, 2 Input NOR/OR Gate, 8 Input AND/NAND Gate Description: The NTE4501 is a triple gate device in a 16 Lead DIP type package constructed with MOS P
EE141Microelettronica. CMOS Logic
Microelettronica CMOS Logic CMOS logic Power consumption in CMOS logic gates Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit
1. pn junction under bias 2. I-Vcharacteristics
Lecture 10 The p Juctio (II) 1 Cotets 1. p juctio uder bias 2. I-Vcharacteristics 2 Key questios Why does the p juctio diode exhibit curret rectificatio? Why does the juctio curret i forward bias icrease
EE5311- Digital IC Design
EE5311- Digital IC Design Module 3 - The Inverter Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai September 3, 2018 Janakiraman, IITM
4.10 The CMOS Digital Logic Inverter
11/11/2004 section 4_10 The CMOS Digital Inverter blank.doc 1/1 4.10 The CMOS Digital Logic Inverter Reading Assignment: pp. 336346 Complementary MOSFET (CMOS) is the predominant technology for constructing
UNIVERSITY OF CALIFORNIA
UNIERSITY OF CAIFORNIA College of Engineering Deartment of Electrical Engineering and Comuter Sciences Fall 006 Borivoje Nikolic Homework #4 Solution EECS 4 Problem A This is a PMOS device. Negative gate-source,
9/18/2008 GMU, ECE 680 Physical VLSI Design
ECE680: Physical VLSI Design Chapter III CMOS Device, Inverter, Combinational circuit Logic and Layout Part 3 Combinational Logic Gates (textbook chapter 6) 9/18/2008 GMU, ECE 680 Physical VLSI Design
The Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction