DATASHEET CD4030BMS. Features. Pinout. Functional Diagram. Applications. Description. CMOS Quad Exclusive-OR Gate. FN3305 Rev 0.

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1 DATASHEET CD3BMS CMOS Quad Exclusive-OR Gate FN335 Rev. Features Piout High Voltage Tye (V Ratig) Medium-Seed Oeratio - tphl, tplh = 5s (ty) at =, CL = 5F CD3BMS TOP VIEW 1% Tested for Quiescet Curret at V A 1 1 Stadardized Symmetrical Outut Characteristics B 13 H 5V, ad 15V Parametric Ratigs J = A B 3 1 G Maximum Iut Curret Of 1 A at 18V Over Full Package-Temerature Rage; - 1A at 18V ad +5 o C K = C D C M = G H L = E F Noise Margi (Over Full Package Temerature Rage): - 1V at = 5V - V at = -.5V at = 15V D F E Meets All Requiremets of JEDEC Tetative Stadard No. 13B, Stadard Secificatios for Descritio of B Series CMOS Devices Fuctioal Diagram Alicatios Eve ad Odd-Parity Geerators ad Checkers A B 1 3 J Logical Comarators Adders/Subtractors C D 5 K Geeral Logic Fuctios Descritio E F L The CD3BMS tyes cosist of four ideedet Exclusive-OR gates. The CD3BMS rovides the system desiger with a meas for direct imlemetatio of the Exclusive-OR fuctio. G H M The CD3BMS is sulied i these 1-lead outlie ackages: Braze Seal DIP HH Frit Seal DIP H1B Ceramic Flatack H3W J = A B K = C D = 7 = 1 M = G H L = E F FN335 Rev. Page 1 of 7

2 CD3BMS Absolute Maximum Ratigs DC Suly Voltage Rage, () V to +V (Voltage Refereced to Termials) Iut Voltage Rage, All Iuts V to +.5V DC Iut Curret, Ay Oe Iut 1mA Oeratig Temerature Rage to +15 o C Package Tyes D, F, K, H Storage Temerature Rage (TSTG) o C to +15 o C Lead Temerature (Durig Solderig) o C At Distace 1/1 1/3 Ich (1.59mm.79mm) from case for 1s Maximum Reliability Iformatio Thermal Resistace ja jc Ceramic DIP ad FRIT Package o C/W o C/W Flatack Package o C/W o C//W Maximum Package Power Dissiatio (PD) at +15 o C For TA = to +1 o C (Package Tye D, F, K) mW For TA = +1 o C to +15 o C (Package Tye D, F, K)..... Derate Liearity at 1mW/ o C to mw Device Dissiatio er Outut Trasistor mW For TA = Full Package Temerature Rage (All Package Tyes) Juctio Temerature o C TABLE 1. DC ELECTRICAL PERFORMANCE GROUP A PARAMETER SYMBOL CONDITIONS (NOTE 1) SUBGROUPS TEMPERATURE MIN MAX UNITS Suly Curret IDD = V, VIN = or GND 1 +5 o C - A +15 o C - A = 18V, VIN = or GND 3 - A Iut Leakage Curret IIL VIN = or GND = 1 +5 o C -1 - A +15 o C -1 - A = 18V A Iut Leakage Curret IIH VIN = or GND = 1 +5 o C - 1 A +15 o C - 1 A = 18V 3-1 A Outut Voltage VOL15 = 15V, No Load 1,, 3 +5 o C, +15 o C, - 5 mv Outut Voltage VOH15 = 15V, No Load (Note 3) 1,, 3 +5 o C, +15 o C, V Outut Curret (Sik) IOL5 = 5V, VOUT =.V 1 +5 o C.53 - ma Outut Curret (Sik) IOL1 =, VOUT =.5V 1 +5 o C 1. - ma Outut Curret (Sik) IOL15 = 15V, VOUT = 1.5V 1 +5 o C ma Outut Curret (Source) IOH5A = 5V, VOUT =.V 1 +5 o C ma Outut Curret (Source) IOH5B = 5V, VOUT =.5V 1 +5 o C ma Outut Curret (Source) IOH1 =, VOUT = 9.5V 1 +5 o C ma Outut Curret (Source) IOH15 = 15V, VOUT = 13.5V 1 +5 o C ma N Threshold Voltage VNTH =, ISS = -1 A 1 +5 o C V P Threshold Voltage VPTH = V, IDD = 1 A 1 +5 o C.7.8 V Fuctioal F =.8V, VIN = or GND 7 +5 o C VOH > VOL < V = V, VIN = or GND 7 +5 o C / / = 18V, VIN = or GND 8A +15 o C = 3V, VIN = or GND 8B Iut Voltage Low (Note ) VIL = 5V, VOH >.5V, VOL <.5V 1,, 3 +5 o C, +15 o C, V Iut Voltage High (Note ) Iut Voltage Low (Note ) Iut Voltage High (Note ) VIH = 5V, VOH >.5V, VOL <.5V 1,, 3 +5 o C, +15 o C, V VIL VIH = 15V, VOH > 13.5V, VOL < 1.5V = 15V, VOH > 13.5V, VOL < 1.5V 1. All voltages refereced to device GND, 1% testig beig imlemeted.. Go/No Go test with limits alied to iuts. 1,, 3 +5 o C, +15 o C, - V 1,, 3 +5 o C, +15 o C, 11 - V 3. For accuracy, voltage is measured differetially to. Limit is.5v max. FN335 Rev. Page of 7

3 CD3BMS TABLE. AC ELECTRICAL PERFORMANCE GROUP A PARAMETER SYMBOL CONDITIONS (NOTE 1, ) SUBGROUPS TEMPERATURE MIN MAX UNITS Proagatio Delay TPHL = 5V, VIN = or GND 9 +5 o C - 8 s TPLH 1, o C, s Trasitio Time TTHL = 5V, VIN = or GND 9 +5 o C - s TTLH 1, o C, - 7 s 1. CL = 5F, RL = K, Iut TR, TF < s.. ad +15 o C limits guarateed, 1% testig beig imlemeted. TABLE 3. ELECTRICAL PERFORMANCE PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Suly Curret IDD = 5V, VIN = or GND 1,, +5 o C - 1 A +15 o C - 3 A =, VIN = or GND 1,, +5 o C - A +15 o C - A = 15V, VIN = or GND 1,, +5 o C - A +15 o C - 1 A Outut Voltage VOL = 5V, No Load 1, +5 o C, +15 o C, - 5 mv Outut Voltage VOL =, No Load 1, +5 o C, +15 o C, Outut Voltage VOH = 5V, No Load 1, +5 o C, +15 o C, Outut Voltage VOH =, No Load 1, +5 o C, +15 o C, - 5 mv.95 - V V Outut Curret (Sik) IOL5 = 5V, VOUT =.V 1, +15 o C.3 - ma. - ma Outut Curret (Sik) IOL1 =, VOUT =.5V 1, +15 o C.9 - ma 1. - ma Outut Curret (Sik) IOL15 = 15V, VOUT = 1.5V 1, +15 o C. - ma. - ma Outut Curret (Source) IOH5A = 5V, VOUT =.V 1, +15 o C ma - -. ma Outut Curret (Source) IOH5B = 5V, VOUT =.5V 1, +15 o C ma - -. ma Outut Curret (Source) IOH1 =, VOUT = 9.5V 1, +15 o C ma ma Outut Curret (Source) IOH15 =15V, VOUT = 13.5V 1, +15 o C - -. ma - -. ma Iut Voltage Low VIL =, VOH > 9V, VOL < 1V Iut Voltage High VIH =, VOH > 9V, VOL < 1V Proagatio Delay TPHL TPLH 1, +5 o C, +15 o C, 1, +5 o C, +15 o C, - 3 V 7 - V = 1,, 3 +5 o C - 13 s = 15V 1,, 3 +5 o C - 1 s FN335 Rev. Page 3 of 7

4 CD3BMS TABLE 3. ELECTRICAL PERFORMANCE (Cotiued) PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE Trasitio Time TTHL = 1,, 3 +5 o C - 1 s TTLH = 15V 1,, 3 +5 o C - 8 s Iut Caacitace CIN Ay Iut 1, +5 o C F 1. All voltages refereced to device GND.. The arameters listed o Table 3 are cotrolled via desig or rocess ad are ot directly tested. These arameters are characterized o iitial desig release ad uo desig chages which would affect these characteristics. 3. CL = 5F, RL = K, Iut TR, TF < s. MIN MAX UNITS TABLE. POST IRRADIATION ELECTRICAL PERFORMANCE PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Suly Curret IDD = V, VIN = or GND 1, +5 o C A N Threshold Voltage VNTH =, ISS = -1 A 1, +5 o C V N Threshold Voltage VTN =, ISS = -1 A 1, +5 o C - 1 V Delta P Threshold Voltage VTP = V, IDD = 1 A 1, +5 o C..8 V P Threshold Voltage VTP = V, IDD = 1 A 1, +5 o C - 1 V Delta Fuctioal F = 18V, VIN = or GND = 3V, VIN = or GND 1 +5 o C VOH > / Proagatio Delay Time TPHL TPLH 1. All voltages refereced to device GND.. CL = 5F, RL = K, Iut TR, TF < s. VOL < / = 5V 1,, 3, +5 o C x +5 o C Limit 3. See Table for +5 o C limit.. Read ad Record V s TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +5 O C PARAMETER SYMBOL DELTA LIMIT Suly Curret - MSI-1 IDD. A Outut Curret (Sik) IOL5 % x Pre-Test Readig Outut Curret (Source) IOH5A % x Pre-Test Readig TABLE. APPLICABLE SUBGROUPS CONFORMANCE GROUP MIL-STD-883 METHOD GROUP A SUBGROUPS READ AND RECORD Iitial Test (Pre Bur-I) 1% 5 1, 7, 9 IDD, IOL5, IOH5A Iterim Test 1 (Post Bur-I) 1% 5 1, 7, 9 IDD, IOL5, IOH5A Iterim Test (Post Bur-I) 1% 5 1, 7, 9 IDD, IOL5, IOH5A PDA (Note 1) 1% 5 1, 7, 9, Deltas Iterim Test 3 (Post Bur-I) 1% 5 1, 7, 9 IDD, IOL5, IOH5A PDA (Note 1) 1% 5 1, 7, 9, Deltas Fial Test 1% 5, 3, 8A, 8B, 1, 11 Grou A Samle 55 1,, 3, 7, 8A, 8B, 9, 1, 11 FN335 Rev. Page of 7

5 CD3BMS TABLE. APPLICABLE SUBGROUPS (Cotiued) CONFORMANCE GROUP MIL-STD-883 METHOD GROUP A SUBGROUPS READ AND RECORD Grou B Subgrou B-5 Samle 55 1,, 3, 7, 8A, 8B, 9, 1, 11, Deltas Subgrous 1,, 3, 9, 1, 11 Subgrou B- Samle 55 1, 7, 9 Grou D Samle 55 1,, 3, 8A, 8B, 9 Subgrous 1, 3 NOTE: 1. 5% Parameteric, 3% Fuctioal; Cumulative for Static 1 ad. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS MIL-STD-883 METHOD TEST READ AND RECORD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD Grou E Subgrou 55 1, 7, 9 Table 1, 9 Table TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS FUNCTION OPEN GROUND 9V -.5V Static Bur-I 1 3,, 1, 11 1,, 5-9, 1, 13 1 Note 1 Static Bur-I Note 1 Dyamic Bur- I Note 1 Irradiatio Note NOTE: 3,, 1, ,, 5,, 8, 9, 1-1 OSCILLATOR 5kHz 5kHz ,, 1, 11,, 9, 13 1, 5, 8, 1 3,, 1, ,, 5,, 8, 9, Each i excet ad GND will have a series resistor of 1K 5%, = 18V.5V. Each i excet ad GND will have a series resistor of 7K 5%; Grou E, Subgrou, samle size is dice/wafer, failures, =.5V Schematic Diagram TRUTH TABLE FOR 1 OF INDENTICAL GATES B* (5, 9, 1) 1(, 8, 13) A* J 3(, 1, 11) A B J = High Level = Low Level *INPUTS PROTECTED BY CMOS PROTECTION NETWORK FIGURE 1. 1 OF IDENTICAL GATES FN335 Rev. Page 5 of 7

6 CD3BMS Tyical Performace Characteristics OUTPUT LOW (SINK) CURRENT (IOL) (ma) GATE-TO-SOURCE VOLTAGE (VGS) = 15V 5V OUTPUT LOW (SINK) CURRENT (IOL) (ma) GATE-TO-SOURCE VOLTAGE (VGS) = 15V 5V FIGURE. TYPICAL OUTPUT LOW (SINK) CURRENT FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT GATE-TO-SOURCE VOLTAGE (VGS) = -5V - -15V OUTPUT HIGH (SOURCE) CURRENT (IOH) (ma) GATE-TO-SOURCE VOLTAGE (VGS) = -5V - -15V OUTPUT HIGH (SOURCE) CURRENT (IOH) (ma) FIGURE. TYPICAL OUTPUT HIGH (SOURCE) CURRENT FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT TRANSITION TIME (tthl, ttlh) (s) 15 SUPPLY VOLTAGE () = 5V 1 15V LOAD CAPACITANCE (CL) (F) PROPAGATION DELAY TIME (tphl, tplh) (s) 3 SUPPLY VOLTAGE () = 5V 1 15V 8 LOAD CAPACITANCE (CL) (F) 1 FIGURE. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE FIGURE 7. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE FN335 Rev. Page of 7

7 CD3BMS Tyical Performace Characteristics (Cotiued) PROPAGATION DELAY TIME (tphl, tplh) (s) 3 1 LOAD CAPACITANCE (CL) = 5F SUPPLY VOLTAGE () (V) FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNC- TION OF SUPPLY VOLTAGE POWER DISSIPATION PER GATE (PD) ( W) SUPPLY VOLTAGE () = 15V V LOAD CAPACITANCE 1 CL = 5F CL = 15F INPUT FREQUENCY (fi) (khz) FIGURE 9. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY Chi Dimesios ad Pad Layout METALLIZATION: Thickess: 11kÅ 1kÅ, AL. PASSIVATION: 1.kÅ - 15.kÅ, Silae BOND PADS:. iches X. iches MIN DIE THICKNESS:.198 iches -.18 iches Dimesios i aretheses are i millimeters ad are derived from the basic ich dimesios as idicated. Grid graduatios are i mils (1-3 ich) Coyright Itersil Americas LLC All Rights Reserved. All trademarks ad registered trademarks are the roerty of their resective owers. For additioal roducts, see Itersil roducts are maufactured, assembled ad tested utilizig ISO91 quality systems as oted i the quality certificatios foud at Itersil roducts are sold by descritio oly. Itersil may modify the circuit desig ad/or secificatios of roducts at ay time without otice, rovided that such modificatio does ot, i Itersil's sole judgmet, affect the form, fit or fuctio of the roduct. Accordigly, the reader is cautioed to verify that datasheets are curret before lacig orders. Iformatio furished by Itersil is believed to be accurate ad reliable. However, o resosibility is assumed by Itersil or its subsidiaries for its use; or for ay ifrigemets of atets or other rights of third arties which may result from its use. No licese is grated by imlicatio or otherwise uder ay atet or atet rights of Itersil or its subsidiaries. For iformatio regardig Itersil Cororatio ad its roducts, see FN335 Rev. Page 7 of 7