. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC85 M74HC85 4-BIT MAGNITUDE COMPARATOR. tpd = 22 ns (TYP.) at VCC =5V

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1 M54HC85 M74HC85 4-BIT MAGNITUDE COMPARATOR. HIGH SPEED tpd = 22 ns (TYP.) at VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH =IOL = 4 ma (MIN.) BALANCED PROPAGATION DELAYS t PLH =t. PHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V to 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS85 B1R (Plastic Package) M1R (Micro Package) F1R (Ceramic Package) C1R (Chip Carrier) ORDER CODES : M54HC85F1R M74HC85M1R M74HC85B1R M74HC85C1R DESCRIPTION The M54/74HC85 is a high speed CMOS 4-BIT MAGNITUDE COMPARATOR fabricated in silicon gate C 2 MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. This comparator compares two 4-bit words and provides a high voltage level on one of the A > B out, A = B out and A < B out outputs. The comparing bit number is easily expanded by cascading several devices as shown in the typical application. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTIONS (top view) INPUT AND OUTPUT EQUIVALENT CIRCUIT NC = No Internal Connection December /11

2 PIN DESCRIPTION IEC LOGIC SYMBOL PIN No SYMBOL NAME AND FUNCTION 2 INA<B A<B Expansion Input 3 IN A=B A=B Expansion Input 4 INA>B A>B Expansion Input 5 OUTA>B A>B Expansion Output 6 OUT A=B A=B Expansion Output 7 OUTA<B A<B Expansion Output 9, 11, 14, 1 B0 to B3 Word B Inputs 10, 12, 13, 15 A 0 to A 3 Word A Inputs 8 GND Ground (0V) 16 V CC Positive Supply Voltage LOCIG DIAGRAM 2/11

3 TRUTH TABLE COMPARING INPUTS CASCADING INPUTS OUTPUTS A>B A<B A=B A>B A<B A=B A3>B3 X X X X X X H L L A3=B3 A2>B2 X X X X X H L L A3=B3 A2=B2 A1>B1 X X X X H L L A3=B3 A2=B2 A1=B1 A0>B0 X X X H L L L L L H H L A3=B3 A2=B2 A1=B1 A0=B0 X X H L L H L H L L H L H L L H L L H H L L L L A3=B3 A2=B2 A1=B1 A0<B0 X X X L H L A3=B3 A2=B2 A1<B1 X X X X L H L A3=B3 A2<B2 X X X X X L H L A3<B3 X X X X X X L H L X: DON T CARE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to VCC V V O DC Output Voltage -0.5 to V CC V IIK DC Input Diode Current ± 20 ma IOK DC Output Diode Current ± 20 ma I O DC Output Source Sink Current Per Output Pin ± 25 ma ICC or IGND DC VCC or Ground Current ± 50 ma P D Power Dissipation 500 (*) mw T stg Storage Temperature -65 to +150 o C TL Lead Temperature (10 sec) 300 o C Absolute MaximumRatings are those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied. (*) 500 mw: 65 o C derate to 300 mw by 10mW/ o C: 65 o Cto85 o C 3/11

4 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 2 to 6 V V I Input Voltage 0 to V CC V VO Output Voltage 0 to VCC V Top Operating Temperature: M54HC Series -55 to +125 M74HC Series -40 to +85 o C C t r,t f Input Rise and Fall Time V CC = 2 V 0 to 1000 ns V CC = 4.5 V 0 to 500 VCC = 6 V 0 to 400 DC SPECIFICATIONS Symbol V IH V IL V OH VOL II ICC Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current V CC (V) Test Conditions TA =25 o C 54HC and 74HC Value -40 to 85 o C 74HC -55 to 125 o C 54HC Min. Typ. Max. Min. Max. Min. Max V I = 4.5 I V O =-20 µa IH or VIL I O =-4.0 ma I O =-5.2 ma V I = 4.5 IO= 20µA VIH or V IL IO= 4.0 ma I O = 5.2 ma VI =VCC or GND ±0.1 ±1 ±1 µa 6.0 VI = VCC or GND µa Unit V V V V 4/11

5 AC ELECTRICAL CHARACTERISTICS (CL =50pF,Inputtr=tf=6ns) Symbol t TLH t THL t PLH t PHL tplh t PHL Parameter Output Transition Time Propagation Delay Time (A, B-OUT) VCC (V) Test Conditions TA =25 o C 54HC and 74HC Value -40 to 85 o C 74HC -55 to 125 o C 54HC Min. Typ. Max. Min. Max. Min. Max Propagation Delay Time ns (CASCADE-OUT) CIN Input Capacitance pf Power Dissipation 23 pf Capacitance CPD (*) (*) C PD is defined as the value of the IC s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD VCC fin + ICC Unit ns ns SWITCHING CHARACTERISTICS TEST WAVEFORM TEST CIRCUIT I CC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 5/11

6 TYPICAL APPLICATION LSB = lowest significant bit MSB = MOST SIGNIFICANT BIT X: DON T CARE COMPARING INPUTS CASCADING INPUTS OUTPUTS A>B A=B A<B A>B A=B A<B (A)>(B) X X X H L L H L L H L L (A)=(B) X H X L H L L L H L L H (A)<(B) X X X L L H 6/11

7 Plastic DIP16 (0.25) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. a B b b D E e e F I L Z P001C 7/11

8 Ceramic DIP16/1 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E e F G H L M N P Q P053D 8/11

9 SO16 (Narrow) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A a a b b C c1 45 (typ.) D E e e F G L M S 8 (max.) P013H 9/11

10 PLCC20 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D d d E e e F G M M P027A 10/11

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