2N2904A-2N2905A 2N2906A-2N2907A
|
|
|
- Ophelia Thornton
- 5 years ago
- Views:
Transcription
1 2N2904A-2N2905A 2N2906A-2N2907A GENERAL PURPOSE AMPLIFIERS AND SITCHES DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A and 2N2905A) and in Jedec TO-18 (for 2N2906A and 2N2907A) metal cases. They are designed for high-speed saturated switching and general purpose applications. 2N2904A/2N2905A approved to CECC , 2N2906A/2N2907A approved to CECC available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit CBO Collector-base oltage (I E =0) 60 CEO Collector-emitter oltage (I B =0) 60 EBO Emitter-base oltage (I C =0) 5 I C Collector Current 600 ma P tot Total Power Dissipation at T amb 25 C for 2N2904A and 2N2905A for 2N2906A and 2N2907A at T case 25 C for 2N2904A and 2N2905A for 2N2906A and 2N2907A T stg,t j Storage and Junction Temperature 65 to 200 C January /7
2 THERMAL DATA 2N2904A 2N2905A 2N2906A 2N2907A R th j-case R th j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 58.3 C/ 292 C/ 97.3 C/ C/ ELECTRICAL CHARACTERISTICS (T amb =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO I CEX I BEX (BR) CBO (BR) CEO * (BR) EBO CE (s at ) * B E (s at ) * Collector Cutoff Current (I E =0) Collector Cutoff Current ( BE = 0.5 ) Base Cutoff Current ( BE = 0.5 ) Collector-base Breakdown oltage (I E =0) Collector-emitter Breakdown oltage (I B =0) Emitter-base Breakdown oltage (I C =0) Collector-emitter Saturation oltage Base-emitter Saturation oltage CB = 50 CB = 50 T amb =150 C CE = na CE = na I C = 10µA 60 I C = 10mA 60 I E = 10µA 5 I C = 150 ma I C = 500 ma I C = 150 ma I C = 500 ma I B = 15mA I B = 50mA I B = 16mA I B = 50mA h FE * DC Current Gain for 2N2904A I C = 0.1 ma I C = 1mA I C = 10mA I C = 150 ma I C = 500 ma and 2N2906A h FE * DC Current Gain for 2N2905A and 2N2907A I C = 0.1 ma I C = 1mA I C = 10mA I C = 150 ma I C = 500 ma f T Transition Frequency I C = 50mA f = 100 MHz C EBO Emitter-base Capacitance I C =0 f = 1 MHz C CBO Collector-base Capacitance I E =0 f = 1 MHz na µa CE = MHz EB = 2 30 pf CB = 10 8 pf t d ** Delay Time I C = 150 ma I B1 = 15 ma CC = ns t r ** Rise Time I C = 150 ma I B1 = 15 ma CC = 30 ns t s ** Storage Time I C = 150 ma CC = 6 I B1 = I B2 = 15mA 80 ns * Pulsed : pulse duration = 300 µs, duty cycle = 1.5 %. ** See test circuit. 2/7
3 ELECTRICAL CHARACTERISTICS(continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit t f ** Fall Time I C = 150 ma CC = 6 30 ns I B1 = I B2 = 15 ma t on ** Turn-on Time I C = 150 ma I B1 = 15mA CC = ns t off ** Turn-off Time I C = 150 ma CC = ns I B1 = I B2 = 15 ma * Pulsed : pulse duration = 300 µs, duty cycle = 1.5 %. ** see test circuit. Normalized DC Current Gain. Collector-emitter Saturation oltage. Collector-base and Emitter-base capacitances. Switching Characteristics. 3/7
4 Test Circuit for t on,t r,t d. PULSE GENERATOR : TO OSCILLOSCOPE : t r 2.0 ms t r < 5.0 ns Frequency = 150 Hz ZIN > 10MΩ Z o =50 Ω Test Circuit for t off,t o,t f. PULSE GENERATOR : TO OSCILLOSCOPE : t r 2.0 ns t r < 5.0 ns Frequency = 150 Hz ZIN > 100 MΩ Z o = 50 Ω 4/7
5 TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o 45 o G D A H I F E L B C /7
6 TO39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o (typ.) G D A H I F E L B P008B 6/7
7 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorizedfor use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7
2N3904 SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment TO-92 / Bulk -AP TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB
HCC/HCF4093B QUAD 2-INPUT NAND SCHMIDT TRIGGERS
QUAD 2-INPUT NAND SCHMIDT TRIGGERS SCHMITT-TRIGGER ACTION ON EACH INPUT WITH NO EXTERNAL COMPONENTS HYSTERESIS OLTAGE TYPICALLY 0.9 AT DD = 5 AND 2.3 AT DD = 10 NOISE IMMUNITY GREATER THAN 50% OF DD (typ.)
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 3A - 600 D 2 PAK Power MESH IGBT TYPE CES CE(sat) I c STGB3NB60SD 600
HCC/HCF4042B QUAD CLOCKED D LATCH
QUAD CLOCKED D LATCH CLOCK POLARITY CONTROL Q AND Q OUTPUTS COMMON CLOCK LOW POWER TTL COMPATIBLE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED TO 20 FOR HCC DEICE 5, 10,
HCC/HCF40181B 4-BIT ARITHMETIC LOGIC UNIT
4-BIT ARITHMETIC LOGIC UNIT FULL LOOK-AHEAD CARRY FOR SPEED OPERATIONS ON LONG WORDS GENERATES 16 LOGIC FUNCTIONS OF TWO BOOLEAN ARIABLES GENERATES 16 ARITHMETIC FUNCTIONS OF TWO 4-BIT BINARY WORDS A =
LD1117 SERIES LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS
LD7 SERIES LOW DROP FIXED AND ADJUSTABLE POSITIE OLTAGE REGULATORS LOW DROPOUT OLTAGE ( TYP) 2.85 DEICE PERFORMANCES ARE SUITABLE FOR SCSI-2 ACTIE TERMINATION OUTPUT CURRENT UP TO 800mA FIXED OUTPUT OLTAGE
.EXPANDABLE WITH MULTIPLE PACKAGES
HCC/HCF4555B HCC/HCF4556B DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXERS 4555B OUTPUTS HIGH ON SELECT 4556B OUTPUTS LOW ON SELECT.EXPANDABLE WITH MULTIPLE PACKAGES STANDARD, SYMMETRICAL OUTPUT CHAR- ACTERISTICS
HCC4543B HCF4543B BCD-TO-7 SEGMENT LATCH/DECODER/LCD DRIVER HCC/HCF4543B
HCC4543B HCF4543B BCD-TO-7 SEGMENT LATCH/DECODER/LCD DRIER DISPLAY BLANKING OF ALL ILLEGAL INPUT COMBINATIONS LATCH STORAGE OF CODE CAPABILITY OF DRIING TWO LOW POWER TTL LOADS, TWO HTL LOADS, OR ONE LOW
.SET-RESET CAPABILITY
DUAL D TYPE FLIP FLOP.SET-RESET CAPABILITY STATIC FLIP-FLOP OPERATION - RETAINS STATE INDEFINITELY WITH CLOCK LEEL EITHER HIGH OR LOW MEDIUM-SPEED OPERATION - 16MHz (typ.) CLOCK TOGGLE RATE AT 10 QUIESCENT
MC MC35172 LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS.. GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA/Amp FOR 2.1MHz, 2V/µs
MC3372 MC3572 LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA/Amp FOR 2MHz, 2/µs SINGLE (OR DUAL) SUPPLY OPERATION FROM +4 TO +44 (±2 TO ±22) WIDE INPUT COMMON MODE
HCC40147B HCF40147B 10 TO 4 LINE BCD PRIORITY ENCODER
HCC40147B HCF40147B 10 TO 4 LINE BCD PRIORITY ENCODER ENCODES 10 LINE TO 4 LINE BCD ACTIE LOW INPUTS AND OUTPUTS STANDARDIZED, SYMMETRICAL OUTPUT CHARACTERIZATION 100 % TESTED FOR QUIESCENT CURRENT. AT
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC133 M74HC INPUT NAND GATE. tpd = 13 ns (TYP.) at VCC =5V
M54HC133 M74HC133 13 INPUT NAND GATE. HIGH SPEED tpd = 13 ns (TYP.) at VCC =5V.LOW POWER DISSIPATION I CC =1µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
Obsolete Product(s) - Obsolete Product(s)
DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXER OUTPUT LOW ON SELECT EXPANDABLE WITH MULTIPLE PACKAGES STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V
HCF4555B DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXER OUTPUT HIGH ON SELECT
DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXER OUTPUT HIGH ON SELECT EXPANDABLE WITH MULTIPLE PACKAGES STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC85 M74HC85 4-BIT MAGNITUDE COMPARATOR. tpd = 22 ns (TYP.) at VCC =5V
M54HC85 M74HC85 4-BIT MAGNITUDE COMPARATOR. HIGH SPEED tpd = 22 ns (TYP.) at VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
HCF4532B 8-BIT PRIORITY ENCODER
8-BIT PRIORITY ENCODER CONVERTS FROM 1 TO 8 TO INPUTS BINARY PROVIDES CASCADING FEATURE TO HANDLE ANY NUMBER OF INPUTS GROUP SELECT INDICATES ONE OR MORE PRIORITY INPUTS QUIESCENT CURRENT SPECIFIED UP
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC148 M74HC148 8 TO 3 LINE PRIORITY ENCODER. tpd = 15 ns (TYP.
M54HC148 M74HC148 8 TO 3 LINE PRIORITY ENCODER. HIGH SPEED tpd = 15 ns (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
. HIGH SPEED .LOW POWER DISSIPATION .OUTPUT DRIVE CAPABILITY M54HCT138 M74HCT138 3 TO 8 LINE DECODER (INVERTING) t PD = 16 ns (TYP.
M54HCT138 M74HCT138 3 TO 8 LINE DECODER (INVERTING). HIGH SPEED t PD = 16 ns (TYP.) at V CC =5V.LOW POWER DISSIPATION ICC =4µAATTA =25 C.OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS
7.5A LOW DROP POSITIVE VOLTAGE REGULATOR ADJUSTABLE AND FIXED. October 2002
THREE TERMINAL ADJUSTABLE OR FIXED OUTPUT VOLTAGE 1.5V,1.8V, 2.5V, 3.0, 3.3V OUTPUT CURRENT UP TO 7.5A 1.4V MAX DROPOUT VOLTAGE AT FULL LOAD LINE REGULATION: MAX 0.2% OVER FULL TEMPERATURE RANGE LOAD REGULATION:
STD5N20L N-CHANNEL 200V Ω - 5A DPAK STripFET MOSFET
N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw Figure 1: Package STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL R DS (on) = 0.65 Ω @ 5V CONDUCTION LOSSES
Obsolete Product(s) - Obsolete Product(s)
8-BIT PRIORITY ENCODER CONVERTS FROM 1 TO 8 TO INPUTS BINARY PROVIDES CASCADING FEATURE TO HANDLE ANY NUMBER OF INPUTS GROUP SELECT INDICATES ONE OR MORE PRIORITY INPUTS QUIESCENT CURRENT SPECIFIED UP
HCC4527B HCF4527B BCD RATE MULTIPLEXER
HCC4527B HCF4527B BCD RATE MULTIPLEXER CASCADABLE IN MULTIPLES OF 4-BITS SET TO 9 INPUT AND 9 DETECT OUTPUT QUIESCENT CURRENT SPECIFIED TO 20 FOR HCC DEICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
HCF4035B 4 STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER
4 STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER 4 STAGE CLOCKED SHIFT OPERATION SYNCHRONOUS PARALLEL ENTRY ON ALL 4 STAGES JK INPUTS ON FIRST STAGE ASYNCHRONOUS TRUE/COMPLEMENT CONTROL ON ALL OUTPUTS STATIC
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC354 M74HC354 8 CHANNEL MULTIPLEXER/REGISTER (3 STATE) tpd = 24 ns (TYP.
M54HC354 M74HC354 8 CHANNEL MULTIPLEXER/REGISTER (3 STATE). HIGH SPEED tpd = 24 ns (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT
Obsolete Product(s) - Obsolete Product(s)
L494 MULTIFUNCTION OLTAGE REGULATOR FOR CAR RADIO PROGRAMMABLE OUTPUTS: TO (00mA); TO (00mA); TO (00mA) STANDBY OUT AND OUT2 WITH INDEPENDENT EN- ABLE CONTROL FOR STAND-BY MODE 0.4A HIGH SIDE DRIER LOAD
Obsolete Product(s) - Obsolete Product(s)
8-INPUT NAND GATE HIGH SPEED: t PD = 13ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: I
DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 21 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS General amplification
M74HCT138TTR 3 TO 8 LINE DECODER (INVERTING)
3 TO 8 LINE DECODER (INVERTING) HIGH SPEED: t PD = 16ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) SYMMETRICAL
M74HC20TTR DUAL 4-INPUT NAND GATE
DUAL 4-INPUT NAND GATE HIGH SPEED: t PD = 9ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
LD1117A SERIES LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS
LD1117A SERIES LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS LOW DROPOUT VOLTAGE (1.15V TYP. @ I OUT =1A,25 C) VERY LOW QUIESCENT CURRENT (5 ma TYP. @ 25 C) OUTPUT CURRENT UP TO 1A FIXED OUTPUT
DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 22 Feb 4 24 Feb 6 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN 1
DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 1999 Apr 12 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
KD A LOW DROP POSITIVE VOLTAGE REGULATOR ADJUSTABLE AND FIXED
7.5A LOW DROP POSITIVE VOLTAGE REGULATOR ADJUSTABLE AND FIXED THREE TERMINAL ADJUSTABLE OR FIXED OUTPUT VOLTAGE 1.5V,1.8V, 2.5V, 3.0, 3.3V OUTPUT CURRENT UP TO 7.5A 1.4V MAX DROPOUT VOLTAGE AT FULL LOAD
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC137 M74HC137 3 TO 8 LINE DECODER/LATCH (INVERTING) tpd = 11 ns (TYP.
M54HC137 M74HC137 3 TO 8 LINE DECODER/LATCH (INVERTING). HIGH SPEED tpd = 11 (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE
M74HCT688TTR 8 BIT EQUALITY COMPARATOR
8 BIT EQUALITY COMPARATOR HIGH SPEED: t PD = 21ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) SYMMETRICAL
SD2902. RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
SD292 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - MHz WATTS 28 VOLTS 12. db MIN. AT 4 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION
Obsolete Product(s) - Obsolete Product(s)
3 TO 8 LINE DECODER HIGH SPEED: t PD = 15ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
BAR42FILM BAR43FILM SMALL SIGNAL SCHOTTKY DIODE. Table 1: Main Product Characteristics I F(AV) 0.1 A V RRM. 30 V T j 150 C 0.33 and 0.
BR42FILM BR43FILM SMLL SIGNL SCHOTTY DIODE Table 1: Main Product Characteristics I F(V) 0.1 V RRM 30 V T j 150 C V F (max) 0.33 and 0.40 V FETURES ND BENEFITS Very small conduction losses Negligible switching
. DIRECTLY CALIBRATED IN o K. . 1 o C INITIAL ACCURACY. . OPERATES FROM 450µA TO 5mA .LESS THAN 1Ω DYNAMIC IMPEDANCE LM135 LM235-LM335,A
. DIRECTLY CALIBRATED IN o K. INITIAL ACCURACY. OPERATES FROM 50µA TO 5mA.LESS THAN Ω DYNAMIC IMPEDANCE -,A PRECISION TEMPERATURE SENSORS Z TO9 (Plastic Package DESCRIPTION The,, are precision temperature
L78L00 SERIES POSITIVE VOLTAGE REGULATORS
L78L00 SERIES POSITIE OLTAGE REGULATORS OUTPUT CURRENT UP TO 100 OUTPUT OLTAGESOF 3.3; 5; ; 8; 9; 12; 15; 18; 24 THERMAL OERLOAD PROTECTION SHORT CIRCUIT PROTECTION NO EXTERNAL COMPONENTS ARE REQUIRED
Obsolete Product(s) - Obsolete Product(s)
BCD TO DECIMAL DECODER HIGH SPEED : t PD = 14ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC =4µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D12 Supersedes data of 1999 Apr 23 22 Feb 4 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54HC4511 M74HC4511 BCD TO 7 SEGMENT LATCH/DECODER DRIVER. tpd = 28 ns (TYP.
M54HC4511 M74HC4511 BCD TO 7 SEGMENT LATCH/DECODER DRIVER. HIGH SPEED tpd = 28 (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) AT T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT
DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. L7900 SERIES NEGATIVE VOLTAGE REGULATORS OUTPUT CURRENT UP TO 1.5A OUTPUT
General Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
M74HC147TTR 10 TO 4 LINE PRIORITY ENCODER
10 TO 4 LINE PRIORITY ENCODER HIGH SPEED: t PD = 15ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
Obsolete Product(s) - Obsolete Product(s)
DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT HIGH SPEED: t PD = 16ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section
4 COMPLEMENTRY NPN / PNP SURFCE MOUNT TRNSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for utomated ssembly Processes Lead Free
DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)
SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:
LD1117A SERIES LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS
LD1117A SERIES LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS LOW DROPOUT VOLTAGE (1.15V TYP. @ I OUT = 1A, 25 C) VERY LOW QUIESCENT CURRENT (5 ma TYP. @ 25 C) OUTPUT CURRENT UP TO 1A FIXED
. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M74HC181 ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR. tpd = 13 ns (TYP.
ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR. HIGH SPEED tpd = 13 (TYP.) AT VCC =5V.LOW POWER DISSIPATION I CC =4µA (MAX.) at T A =25 C.HIGH NOISE IMMUNITY VNIH =VNIL =28%VCC (MIN.) OUTPUT DRIVE CAPABILITY
L7800AB/AC SERIES PRECISION 1A REGULATORS
L7800AB/AC SERIES PRECISION 1A REGULATORS OUTPUT CURRENT IN EXCESS OF 1A OUTPUT VOLTAGES OF 5; 6; 8; 9; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTION OUTPUT TRANSITION SOA PROTECTION 2% OUTPUT VOLTAGE
STTH6004W. Ultrafast high voltage rectifier. Table 1: Main product characteristics I F(AV) 60 A V RRM. 400 V T j (max) 175 C V F (typ)
STTH64W Ultrafast high voltage rectifier Table 1: Main product characteristics I F(AV) 6 A V RRM 4 V T j (max) 175 C V F (typ).83 V t rr (max) 5 ns Features and benefits Ultrafast switching Low reverse
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
74VHCT138ATTR 3 TO 8 LINE DECODER (INVERTING)
3 TO 8 LINE DECODER (INVERTING) HIGH SPEED: t PD = 7.6 ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 4 µa (MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS: V IH = 2V (MIN.), V IL = 0.8V (MAX) POWER
NE556 SA556 - SE556 GENERAL PURPOSE DUAL BIPOLAR TIMERS. LOW TURN OFF TIME MAXIMUM OPERATING FREQUENCY GREATER THAN 500kHz
SA - SE GENERAL PURPOSE DUAL BIPOLAR TIMERS. LOW TURN OFF TIME MAXIMUM OPERATING FREQUENCY GREATER THAN 00kHz. TIMING FROM MICROSECONDS TO HOURS. OPERATES IN BOTH ASTABLE AND MONOSTABLE MODES HIGH OUTPUT
DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN transistor/schottky diode module Supersedes data of 2002 Oct 28 2003 Jul 04 FEATURES 600 mw total power dissipation High current capability
HCF4089B BINARY RATE MULTIPLIER
BINARY RATE MULTIPLIER CASCADABLE IN MULTIPLES OF 4-BITS SET TO "15" INPUT AND "15" DETECT OUTPUT QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V AND 15V PARAMETRIC
7.5 NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER. March /9
FEATURE TDA. NS TRIPLE HIGH OLTAGE IDEO AMPLIFIER TRIPLE CHANNEL IDEO AMPLIFIER SUPPLY OLTAGE: 0 TYPICAL RISE AND FALL TIMEs:.ns TYPICAL BANDWIDTH: 0Mhz TYPICAL 0 OLTS OUTPUT DYNAMIC RANGE LOW POWER CONSUMPTION
150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of 2003 Jun 17 2004 Nov 08 FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V CEsat High collector current
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
L7800 SERIES POSITIVE VOLTAGE REGULATORS
L7800 SERIES POSITIVE VOLTAGE REGULATORS OUTPUT CURRENT TO 1.5A OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 12; 15; 18; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSITION SOA PROTECTION
DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 NPN transistor/schottky-diode module 2003 Nov 0 FEATURES 600 mw total power dissipation High current capability Reduces required PCB area Reduced
Obsolete Product(s) - Obsolete Product(s)
STTH124TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics I F(AV) 2 x 6 A V RRM 4 V T j (max) 15 C V F (typ) t rr (max) Features and benefits Ultrafast switching Low reverse current
L7800 SERIES POSITIVE VOLTAGE REGULATORS
L7800 SERIES POSITIVE VOLTAGE REGULATORS OUTPUT CURRENT TO 1.5A OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 10; 12; 15; 18; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSITION SOA PROTECTION
MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
TEA6422 BUS-CONTROLLED AUDIO MATRIX
BUS-CONTROLLED AUDIO MATRIX 6 Stereo Inputs 3 Stereo Ouputs Gain Control db/mute for each Output Cascadable ( different addresses) Serial Bus Controlled Very Low Noise Very Low Distorsion Fully ESD Protected
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
ST3L01 TRIPLE VOLTAGE REGULATOR
TRIPLE VOLTAGE REGULATOR DUAL INPUT VOLTAGE (12V AND 5V) TRIPLE OUTPUT VOLTAGE (2.6V, 3.3V, 8V) 2.6V GUARANTEED I OUT UP TO 1.2A 3.3V GUARANTEED I OUT UP TO 1.0A 8V GUARANTEED I OUT UP TO 200mA THERMAL
DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 23 Nov 2 24 Nov 5 FEATURES High current Two current gain selections. APPLICATIONS Linear voltage regulators High side switches
COMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM117/217 LM317 1.2V TO 37V VOLTAGE REGULATOR OUTPUT VOLTAGE RANGE: 1.2
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit I T(RMS)
TYN61M 1 SCR Table 1: Main Features Symbol Value Unit I T(RMS) 1 V DRM /V RRM 6 V I T (min./max.) 1.5 / 5 m K DESCRIPTION The TYN61M SCR is suitable to fit modes of control found in applications such as
HCF4543B BCD-TO-7-SEGMENT LATCH/DECODER/LCD DRIVER
BCD-TO-7-SEGMENT LATCH/DECODER/LCD DRIVER DISPLAY BLANKING OF ALL ILLEGAL INPUT COMBINATIONS LATCH STORAGE OF CODE INSTRUMENT DISPLAY DRIVER DASHBOARD DISPLAY DRIVER COMPUTER/CALCULATOR DISPLAY DRIVER
DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D86 Supersedes data of 2003 Dec 0 2004 Nov 05 FEATURES High current. APPLICATIONS Linear voltage regulators Low side switch Supply line switch for negative
DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification DESCRIPTION High Breakdown oltage- : (BR)CBO = 1100(Min) Fast Switching Speed Wide Area of Safe Operation APPLICATIONS
DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Supersedes data of 2004 Jun 02 2004 Jun 24 FEATURES Built-in bias resistors
L79L00 SERIES NEGATIVE VOLTAGE REGULATORS
L79L00 SERIES NEGATIVE VOLTAGE REGULATORS OUTPUT CURRENT UP TO 100 ma OUTPUT VOLTAGES OF -5; -6; -8; -9; -12; -15 V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION NO EXTERNAL COMPONENTS ARE REQUIRED
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC42 Video Output for High Definition VDT High Speed Switching Applications Unit: mm High transition frequency: ft = 4 MHz (typ.) (VCE = V, IC = 7 ma)
DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 Supersedes data of 2002 Nov 15 2003 Nov 25 FEATURES High current Three current gain selections 1.4 W total power dissipation. APPLICATIONS Linear
BC546 / 547 / 548. Small Signal Transistors (NPN) Vishay Semiconductors
Small Signal Transistors (NPN) Features NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available
65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA
Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic