Lecture #25. Amplifier Types
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1 ecture #5 Midterm # formatio ate: Moday November 3 rd oics to be covered: caacitors ad iductors 1 st -order circuits (trasiet resose) semicoductor material roerties juctios & their alicatios MOSFEs; commo-source amlifier Review sessio: Friday October 31 st -4 PM OUNE he trascoductace amlifier (from Howe & Sodii Chater 8.1) Summary of MOSFE ecture 5, Slide 1 Amlifier yes 1. oltage amlifier iut & outut sigals are voltages. Curret amlifier iut ad outut sigals are currets v i i i amlifier amlifier v out 3. rascoductace amlifier iut sigal is voltage; outut sigal is curret v i amlifier 4. rasresistace amlifier iut sigal is curret; outut sigal is voltage i i amlifier vout ecture 5, Slide
2 wo-port Amlifier Model for a trascoductace amlifier v i R i g m v i R out ecture 5, Slide 3 Effect of Source ad oad Resistaces R s v s v i R i g m v i R out R Overall trascoductace is degraded by the source resistace R s ad load resistace R i v out s = R i Ri R s g m R Rout R out ecture 5, Slide 4
3 NMOSFE Summary: Curret Flow NMOSFE Structure i G oly-si i S -tye Si i B Gate curret i G = Body curret i B = i S = NMOSFE Circuit Symbol v S G v S f, = f >, > Curret is limited by either the resistace of the iversio-charge layer, or velocity saturatio ecture 5, Slide 5 NMOSFE Summary: Modes of Oeratio he, a -tye chael is ot formed. No electros flow from SOURCE to RAN CUOFF mode he >, a -tye chael ( iversio layer of electros at the surface of the semicoductor) is formed. Electros may flow from SOURCE to RAN ( > ) f S <, the iversio layer exists across the etire chael legth, ad curret icreases with S NEAR mode or ROE mode f S, the iversio layer is iched off at the drai ed, ad curret does ot icrease with S SAURAON mode ecture 5, Slide 6
4 NMOSFE Summary: - Characteristics NEAR or ROE SAURAON v = G3 > G v S = v SA v = G > G1 v = G1 > CUOFF ( v ) v S ecture 5, Slide 7 NMOSFE Summary: - Equatios NEAR or ROE SAURAON = k S S SA = k ( ) v S = v SA v > v S ecture 5, Slide 8
5 PMOSFE - Equatios v S v > v S = v SA SA SAURAON k = ( ) NEAR or ROE = k S S ecture 5, Slide 9 NMOSFE Summary: No-deal Behavior Chael-legth modulatio: he legth of the ich-off regio,, icreases with icreasig S above. t reduces the legth of the iversio layer ad hece the resistace of this layer. cross-sectioal view of chael: iversio layer icreases oticeably with S, if is small λ is the sloe (chael-legth modulatio arameter) SA ecture 5, Slide 1 v S
6 (cotiued) elocity Saturatio: a very-short-chael MOSFE, saturates because the carrier velocity is limited to ~1 7 cm/sec reaches a limit before ich-off occurs SA where = C ox SA = v µ sat SA v sat < ecture 5, Slide 11 (cotiued) Subthreshold eakage: For, is exoetially deedet o : log S 1/S is the sloe leakage curret, OFF v he leakage curret secificatio sets the lower limit for the threshold voltage ecture 5, Slide 1
7 NMOSFE Summary: Circuit Models For aalog circuit alicatios (where we are cocered oly with chages i curret ad voltage sigals, rather tha their total values), the small-sigal model is used: G i d v gs g m v gs 1/g o S trascoductace outut coductace g g m o k λ ecture 5, Slide 13 ( ) S where & are the C bias (Q oit) values NMOSFE Summary: Circuit Models For digital circuit alicatios, the MOSFE is modeled as a resistive switch: R eq As the load caacitor discharges, S decreases to sloe / SA R eq SA 3 4 k = SA MOSFE is tured o ( = ) whe S = 5 1 λ 6 ( ) / v S sloe / SA ecture 5, Slide 14
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