EEC 118 Lecture #5: CMOS Inverter AC Characteristics. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation


 Dorthy Gaines
 4 years ago
 Views:
Transcription
1 EEC 8 Lecture #5: CMOS Inverter AC Characteristics Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
2 Acknowledgments Slides due to Rajit Manohar from ECE 547 Advanced VLSI Design at Cornell University Amirtharajah/Parkhurst, EEC 8 Spring 0
3 Outline Review: CMOS Inverter Transfer Characteristics CMOS Inverters: Rabaey (Kang & Leblebici, , 6.7) Amirtharajah/Parkhurst, EEC 8 Spring 0 4
4 CMOS Inverter VTC: Device Operation P linear N cutoff P cutoff N linear P linear N sat P sat N sat P sat N linear Amirtharajah/Parkhurst, EEC 8 Spring 0 5
5 Logic Circuit Delay For CMOS (or almost all logic circuit families), only one fundamental equation necessary to determine delay: I C Consider the discretized version: Rewrite to solve for delay: dv Only three ways to make faster logic: C, ΔV, I dt Δt I C C ΔV I ΔV Δt Amirtharajah/Parkhurst, EEC 8 Spring 0 6
6 Vin CMOS Inverter Capacitances Cgs,p Cgd,p Cgd,n Vdd Csb,p Cdb,p Cdb,n Cgs,n Csb,n Gnd f Cint Amirtharajah/Parkhurst, EEC 8 Spring 0 7 Cg Assume input transition is fixed, then delay determined by output Capacitance on node f (output): Junction cap Cdb,p and Cdb,n Gate capacitance Cgd,p and Cgd,n Interconnect cap Receiver gate cap
7 CMOS Inverter Junction Capacitances Junction capacitances C db,p and C db,n : C j Equation for junction cap: ( ) V AC V φ0 N N j0 εq a d, C m j0 N a + N d φ0 m Nonlinear, depends on voltage across junction Use K eq factor to get equivalent capacitance for a voltage transition C AK C + db eq j PK eqsw C jsw Amirtharajah/Parkhurst, EEC 8 Spring 0 8
8 CMOS Inverter Gate Capacitances Gate capacitances C GD,p and C GD,n : Just after the input switches(t 0 + ), what regions are transistors in? One is in cutoff: C GD Overlap Cap One is in Saturation: C GD Overlap Cap Therefore, gatetodrain capacitance is due to overlap capacitance : C gd, p Cgd, n C ox WL D However, also need to consider Miller effect... Amirtharajah/Parkhurst, EEC 8 Spring 0 9
9 CMOS Inverter Capacitances: Miller Effect C gd Vout Vout Vin Vin C gd When input rises by ΔV, output falls by ΔV Change in stored charge: ΔQ C gd ΔV (C gd ΔV) Effective voltage change across C gd is ΔV Effective capacitance to ground is twice C gd Including Miller effect: C C C WL (For transistor in Cutoff) gd, p gd, n ox D Amirtharajah/Parkhurst, EEC 8 Spring 0 0
10 CMOS Inverter Capacitances: Receiver Receiver gate capacitance Includes all capacitances of gate(s) connected to output node Unknown region of operation for receiver transistor: total gate cap varies from (/3)WLC ox to WLC ox Ignore Miller effect (taken into account on output) Assume worstcase value, include overlap C WL C + WL g eff ox D C ox C g WL C ox Amirtharajah/Parkhurst, EEC 8 Spring 0
11 Inverter Capacitances: Analysis Simplify the circuit: combine all capacitances at output into one lumped linear capacitance: C load *Cgd,n + *Cgd,p + Cdb,n + Cdb,p + Cint + Cg Miller effect Csb,n Csb,p 0 Cgs,n and Cgs,p are not connected to the load. These are part of the gate capacitance Cg Amirtharajah/Parkhurst, EEC 8 Spring 0
12 FirstOrder Inverter Delay Suppose ideal voltage step at input Assume: Current charging or discharging capacitance C load is nearly constant I avg t PHL C load (Vdd  Vdd/) / I avg Vin Vout C load t PLH C load (Vdd/  Vss) / I avg Amirtharajah/Parkhurst, EEC 8 Spring 0 3
13 Inverter Delay: Falling Vin I D.n C load Assume PMOS fully off (ideal step input, I D,p 0) I I C D n dv dt C load dv dt out, Need to determine I D,n Amirtharajah/Parkhurst, EEC 8 Spring 0 4
14 Inverter Delay: Falling Vdd Vdd  Vtn NMOS in saturation NMOS in linear region Vdd/ t 0 t t From t 0 to t : NMOS in saturation From t to t : NMOS in linear region Find I D in each region Amirtharajah/Parkhurst, EEC 8 Spring 0 5
15 Inverter Delay: Falling t t 0 Assumption: Input fast enough to go through transition before output voltage changes V out drops from V to V DD V TN (NMOS saturated) I DS k n ( V in V T 0, n ) / k n ( V V T 0, n ) / t t t 0 dt t 0 k n ( V k n ( V CL V C V L T 0, n T 0, n V ) T 0, n ) V V V T 0, n dv out Amirtharajah/Parkhurst, EEC 8 Spring 0 6
16 I t t DS Inverter Delay: Falling t t V out drops from (V V T0,n ) to V DD / NMOS in linear region t t k n [ ( ) ] V V V V C k n L ( V ( V V + V V T 0, n OL CL V )/ T 0, n T 0, n k out n [ ( ) ] V V V V out ( V ln ) dv T 0, n out V ( V out T 0, n ) ( V + V OL out )/ + V OL )/ Amirtharajah/Parkhurst, EEC 8 Spring 0 7
17 Inverter Delay: Falling, Total Total fall delay (t t 0 ) + (t t ) t PHL C V T 0, n 4( V V ) L T 0, n + ln k ( ) + n V VT 0, n V VT 0, n V VOL Amirtharajah/Parkhurst, EEC 8 Spring 0 8
18 t PLH Inverter Delay: Rising Similar calculation as for falling delay Separate into regions where PMOS is in linear, saturation C V T 0, p 4( V VOL V ) L T 0, p + ln k ( ) + p V VOL VT 0, p V VOL VT 0, p V VOL Note: to balance rise and fall delays (assuming V V DD, V OL 0V, and V T0,n V T0,p ) requires k k p n.5 Amirtharajah/Parkhurst, EEC 8 Spring 0 9 W L W L p n μn μ p
19 Inverter Rise, Fall Times Summary  Exact method: separate into two regions t V drops from 0.9V out DD to V DD V T,n (NMOS in saturation) V out rises from 0.V DD to V T,p (PMOS in saturation) t V drops from V out DD V T,n to 0.V DD (NMOS in linear region) V out rises from V T,p to 0.9 V DD (PMOS in linear region) t f,r t + t Amirtharajah/Parkhurst, EEC 8 Spring 0 0
20 Review of approximate method CMOS Inverter Delay Assume a constant average current for the transition V Vdd I I avg average of drain V ½Vdd current at beginning and end of transition I t t PHL PLH C I C I load avg load avg ( V V ) DD ( V V ) DD DD SS t t I avg ½(I +I ) Amirtharajah/Parkhurst, EEC 8 Spring 0
21 CMOS Inverter Delay: nd Approximation Another approximate method: Again assume constant I avg I avg current I at start of transition t t PHL PLH k k n p C load ( V V ) C DD load ( V V ) DD V V DD Tn DD TP Why is this a good approximation (esp. for deep submicron)? V Vdd V ½Vdd I t t I avg I Amirtharajah/Parkhurst, EEC 8 Spring 0
22 CMOS Inverter Delay: Finite Input Transitions What if input has finite rise/fall time? Both transistors are on for some amount of time Capacitor charge/discharge current is reduced Empirical equations: t phl (ns) t rise (ns) t t tr phl ( actual) t phl ( step) + ( f ) ( ) plh actual t plh step + t Amirtharajah/Parkhurst, EEC 8 Spring 0 3
23 How to Improve Delay? Minimize load capacitances Small interconnect capacitance Small Cg of next stage Raise supply voltage Increases current faster than increased swing ΔV Increase transistor gain factor Increase transistor drive current for charging/discharging output capacitance Use low threshold voltage devices More subthreshold leakage power dissipation Amirtharajah/Parkhurst, EEC 8 Spring 0 4
24 Inverter Power Consumption Static power consumption (ideal) 0 Actually DIBL (DrainInduced Barrier Lowering), gate leakage, junction leakage are still present Dynamic power consumption P P avg avg / T dv T out Vout Cload dt + DD out load T dt dt 0 T / T / T V out Cload + VDDVoutCload CloadVout T 0 T Pavg CloadVDD CloadVDD f T P avg T T 0 ()() t i t dv out ( V V ) C dt Amirtharajah/Parkhurst, EEC 8 Spring 0 5 v dt /
25 Next Time: Combinational Logic Combinational MOS Logic DC Characteristics, Equivalent Inverter method AC Characteristics, Switch Model Amirtharajah/Parkhurst, EEC 8 Spring 0 6
EEC 118 Lecture #6: CMOS Logic. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #6: CMOS Logic Rajeevan mirtharajah University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW 3 due this
More informationEEC 116 Lecture #5: CMOS Logic. Rajeevan Amirtharajah Bevan Baas University of California, Davis Jeff Parkhurst Intel Corporation
EEC 116 Lecture #5: CMOS Logic Rajeevan mirtharajah Bevan Baas University of California, Davis Jeff Parkhurst Intel Corporation nnouncements Quiz 1 today! Lab 2 reports due this week Lab 3 this week HW
More informationEEC 116 Lecture #3: CMOS Inverters MOS Scaling. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 116 Lecture #3: CMOS Inverters MOS Scaling Rajeevan Amirtharajah University of California, Davis Jeff Parhurst Intel Corporation Outline Review: Inverter Transfer Characteristics Lecture 3: Noise Margins,
More informationEEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation
EEC 118 Lecture #2: MOSFET Structure and Basic Operation Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Announcements Lab 1 this week, report due next week Bring
More informationTHE INVERTER. Inverter
THE INVERTER DIGITAL GATES Fundamental Parameters Functionality Reliability, Robustness Area Performance» Speed (delay)» Power Consumption» Energy Noise in Digital Integrated Circuits v(t) V DD i(t) (a)
More informationThe Physical Structure (NMOS)
The Physical Structure (NMOS) Al SiO2 Field Oxide Gate oxide S n+ Polysilicon Gate Al SiO2 SiO2 D n+ L channel P Substrate Field Oxide contact Metal (S) n+ (G) L W n+ (D) Poly 1 Transistor Resistance Two
More informationECE321 Electronics I
ECE31 Electronics Lecture 1: CMOS nverter: Noise Margin & Delay Model Payman ZarkeshHa Office: ECE Bldg. 30B Office hours: Tuesday :003:00PM or by appointment Email: payman@ece.unm.edu Slide: 1 CMOS
More informationMOSFET and CMOS Gate. Copy Right by Wentai Liu
MOSFET and CMOS Gate CMOS Inverter DC Analysis  Voltage Transfer Curve (VTC) Find (1) (2) (3) (4) (5) (6) V OH min, V V OL min, V V IH min, V V IL min, V OHmax OLmax IHmax ILmax NM L = V ILmax V OL max
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 10: February 15, 2018 MOS Inverter: Dynamic Characteristics Penn ESE 570 Spring 2018 Khanna Lecture Outline! Inverter Power! Dynamic Characteristics
More information2007 Fall: Electronic Circuits 2 CHAPTER 10. DeogKyoon Jeong School of Electrical Engineering
007 Fall: Electronic Circuits CHAPTER 10 Digital CMOS Logic Circuits DeogKyoon Jeong dkjeong@snu.ac.kr k School of Electrical Engineering Seoul lnational luniversity it Introduction In this chapter, we
More information5.0 CMOS Inverter. W.Kucewicz VLSICirciuit Design 1
5.0 CMOS Inverter W.Kucewicz VLSICirciuit Design 1 Properties Switching Threshold Dynamic Behaviour Capacitance Propagation Delay nmos/pmos Ratio Power Consumption Contents W.Kucewicz VLSICirciuit Design
More informationEEC 118 Lecture #16: Manufacturability. Rajeevan Amirtharajah University of California, Davis
EEC 118 Lecture #16: Manufacturability Rajeevan Amirtharajah University of California, Davis Outline Finish interconnect discussion Manufacturability: Rabaey G, H (Kang & Leblebici, 14) Amirtharajah, EEC
More informationECE 438: Digital Integrated Circuits Assignment #4 Solution The Inverter
ECE 438: Digital Integrated Circuits Assignment #4 The Inverter Text: Chapter 5, Digital Integrated Circuits 2 nd Ed, Rabaey 1) Consider the CMOS inverter circuit in Figure P1 with the following parameters.
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 10: February 16, 2016 MOS Inverter: Dynamic Characteristics Lecture Outline! Review: Symmetric CMOS Inverter Design! Inverter Power! Dynamic
More informationCMPEN 411 VLSI Digital Circuits. Lecture 04: CMOS Inverter (static view)
CMPEN 411 VLSI Digital Circuits Lecture 04: CMOS Inverter (static view) Kyusun Choi [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic] CMPEN
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 13 The CMOS Inverter: dynamic behavior (delay) guntzel@inf.ufsc.br
More informationPower Dissipation. Where Does Power Go in CMOS?
Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit
More informationIntegrated Circuits & Systems
Federal University of Santa Catarina Center for Technology Computer Science & Electronics Engineering Integrated Circuits & Systems INE 5442 Lecture 14 The CMOS Inverter: dynamic behavior (sizing, inverter
More informationMidterm. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. Pass Transistor Logic. Restore Output.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 16: March 21, 2017 Transmission Gates, Euler Paths, Energy Basics Review Midterm! Midterm " Mean: 79.5 " Standard Dev: 14.5 2 Lecture Outline!
More informationAnnouncements. EE141 Fall 2002 Lecture 7. MOS Capacitances Inverter Delay Power
 Fall 2002 Lecture 7 MOS Capacitances Inverter Delay Power Announcements Wednesday 123pm lab cancelled Lab 4 this week Homework 2 due today at 5pm Homework 3 posted tonight Today s lecture MOS capacitances
More informationEEE 421 VLSI Circuits
EEE 421 CMOS Properties Full railtorail swing high noise margins» Logic levels not dependent upon the relative device sizes transistors can be minimum size ratioless Always a path to V dd or GND in steady
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 15: March 15, 2018 Euler Paths, Energy Basics and Optimization Midterm! Midterm " Mean: 89.7 " Standard Dev: 8.12 2 Lecture Outline! Euler
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 8 Power Dissipation in CMOS Gates Power in CMOS gates Dynamic Power Capacitance switching Crowbar
More informationEECS 141: FALL 05 MIDTERM 1
University of California College of Engineering Department of Electrical Engineering and Computer Sciences D. Markovic TuTh 111:3 Thursday, October 6, 6:38:pm EECS 141: FALL 5 MIDTERM 1 NAME Last SOLUTION
More informationPractice 7: CMOS Capacitance
Practice 7: CMOS Capacitance Digital Electronic Circuits Semester A 2012 MOSFET Capacitances MOSFET Capacitance Components 3 Gate to Channel Capacitance In general, the gate capacitance is similar to a
More informationDigital Integrated Circuits
Chapter 6 The CMOS Inverter 1 Contents Introduction (MOST models) 0, 1 st, 2 nd order The CMOS inverter : The static behavior: o DC transfer characteristics, o Shortcircuit current The CMOS inverter :
More informationLecture 14  Digital Circuits (III) CMOS. April 1, 2003
6.12  Microelectronic Devices and Circuits  Spring 23 Lecture 141 Lecture 14  Digital Circuits (III) CMOS April 1, 23 Contents: 1. Complementary MOS (CMOS) inverter: introduction 2. CMOS inverter:
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: CMOS Inverter: Visual VTC. Review: CMOS Inverter: Visual VTC
ESE 570: Digital Integrated Circuits and LSI Fundamentals Lec 0: February 4, 207 MOS Inverter: Dynamic Characteristics Lecture Outline! Review: Symmetric CMOS Inverter Design! Inverter Power! Dynamic Characteristics
More informationDigital Microelectronic Circuits ( ) The CMOS Inverter. Lecture 4: Presented by: Adam Teman
Digital Microelectronic Circuits (3611301 ) Presented by: Adam Teman Lecture 4: The CMOS Inverter 1 Last Lectures Moore s Law Terminology» Static Properties» Dynamic Properties» Power The MOSFET Transistor»
More informationChapter 5. The Inverter. V1. April 10, 03 V1.1 April 25, 03 V2.1 Nov Inverter
Chapter 5 The Inverter V1. April 10, 03 V1.1 April 25, 03 V2.1 Nov.12 03 Objective of This Chapter Use Inverter to know basic CMOS Circuits Operations Watch for performance Index such as Speed (Delay calculation)
More informationFig. 1 CMOS Transistor Circuits (a) Inverter Out = NOT In, (b) NORgate C = NOT (A or B)
1 Introduction to TransistorLevel Logic Circuits 1 By Prawat Nagvajara At the transistor level of logic circuits, transistors operate as switches with the logic variables controlling the open or closed
More informationCHAPTER 15 CMOS DIGITAL LOGIC CIRCUITS
CHAPTER 5 CMOS DIGITAL LOGIC CIRCUITS Chapter Outline 5. CMOS Logic Gate Circuits 5. Digital Logic Inverters 5.3 The CMOS Inverter 5.4 Dynamic Operation of the CMOS Inverter 5.5 Transistor Sizing 5.6 Power
More informationEE115C Digital Electronic Circuits Homework #4
EE115 Digital Electronic ircuits Homework #4 Problem 1 Power Dissipation Solution Vdd =1.0V onsider the source follower circuit used to drive a load L =20fF shown above. M1 and M2 are both NMOS transistors
More informationChapter 2 CMOS Transistor Theory. JinFu Li Department of Electrical Engineering National Central University Jungli, Taiwan
Chapter 2 CMOS Transistor Theory JinFu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction MOS Device Design Equation Pass Transistor JinFu Li, EE,
More informationCheck course home page periodically for announcements. Homework 2 is due TODAY by 5pm In 240 Cory
EE141 Fall 005 Lecture 6 MOS Capacitances, Propagation elay Important! Check course home page periodically for announcements Homework is due TOAY by 5pm In 40 Cory Homework 3 will be posted TOAY ue Thursday
More informationDynamic operation 20
Dynamic operation 20 A simple model for the propagation delay Symmetric inverter (rise and fall delays are identical) otal capacitance is linear t p Minimum length devices R W C L t = 0.69R C = p W L 0.69
More informationECE 342 Solid State Devices & Circuits 4. CMOS
ECE 34 Solid State Devices & Circuits 4. CMOS Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input
More informationHightoLow Propagation Delay t PHL
HightoLow Propagation Delay t PHL V IN switches instantly from low to high. Driver transistor (nchannel) immediately switches from cutoff to saturation; the pchannel pullup switches from triode to
More informationCMOS INVERTER. Last Lecture. Metrics for qualifying digital circuits. »Cost» Reliability» Speed (delay)»performance
CMOS INVERTER Last Lecture Metrics for qualifying digital circuits»cost» Reliability» Speed (delay)»performance 1 Today s lecture The CMOS inverter at a glance An MOS transistor model for manual analysis
More informationENGR890 Digital VLSI Design Fall Lecture 4: CMOS Inverter (static view)
ENGR89 Digital VLSI Design Fall 5 Lecture 4: CMOS Inverter (static view) [Adapted from Chapter 5 of Digital Integrated Circuits, 3, J. Rabaey et al.] [Also borrowed from Vijay Narayanan and Mary Jane Irwin]
More informationDigital Integrated Circuits 2nd Inverter
Digital Integrated Circuits The Inverter The CMOS Inverter V DD Analysis Inverter complex gate Cost V in V out complexity & Area Integrity and robustness C L Static behavior Performance Dynamic response
More informationCMOS Inverter (static view)
Review: Design Abstraction Levels SYSTEM CMOS Inverter (static view) + MODULE GATE [Adapted from Chapter 5. 5.3 CIRCUIT of G DEVICE Rabaey s Digital Integrated Circuits,, J. Rabaey et al.] S D Review:
More informationEE141Microelettronica. CMOS Logic
Microelettronica CMOS Logic CMOS logic Power consumption in CMOS logic gates Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit
More informationMiscellaneous Lecture topics. Mary Jane Irwin [Adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.]
Miscellaneous Lecture topics Mary Jane Irwin [dapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] MOS Switches MOS transistors can be viewed as simple switches. In an NSwitch, the
More informationThe CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD S D V in V out C L D S CMOS Inverter N Well V DD V DD PMOS 2λ PMOS Contacts In Out In Out Metal 1 NMOS Polysilicon NMOS GND CMOS Inverter: Steady State Response V
More informationMOS Transistor Theory
CHAPTER 3 MOS Transistor Theory Outline 2 1. Introduction 2. Ideal IV Characteristics 3. Nonideal IV Effects 4. CV Characteristics 5. DC Transfer Characteristics 6. Switchlevel RC Delay Models MOS
More informationUniversity of Pennsylvania Department of Electrical Engineering. ESE 570 Midterm Exam March 14, 2013 FORMULAS AND DATA
University of Pennsylvania Department of Electrical Engineering ESE 570 Midterm Exam March 4, 03 FORMULAS AND DATA. PHYSICAL CONSTANTS: n i = intrinsic concentration undoped) silicon =.45 x 0 0 cm 3 @
More informationECE 342 Electronic Circuits. Lecture 35 CMOS Delay Model
ECE 34 Electronic Circuits Lecture 35 CMOS Delay Model Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 34 Jose Schutt Aine 1 Digital Circuits V IH : Input
More information9/18/2008 GMU, ECE 680 Physical VLSI Design
ECE680: Physical VLSI Design Chapter III CMOS Device, Inverter, Combinational circuit Logic and Layout Part 3 Combinational Logic Gates (textbook chapter 6) 9/18/2008 GMU, ECE 680 Physical VLSI Design
More informationObjective and Outline. Acknowledgement. Objective: Power Components. Outline: 1) Acknowledgements. Section 4: Power Components
Objective: Power Components Outline: 1) Acknowledgements 2) Objective and Outline 1 Acknowledgement This lecture note has been obtained from similar courses all over the world. I wish to thank all the
More informationECE 546 Lecture 10 MOS Transistors
ECE 546 Lecture 10 MOS Transistors Spring 2018 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu NMOS Transistor NMOS Transistor NChannel MOSFET Built on ptype
More informationLecture 4: DC & Transient Response
Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response David Harris Harvey Mudd College Spring 004 Outline DC Response Logic Levels and Noise Margins Transient Response Delay Estimation Slide
More informationLecture 11 VTCs and Delay. No lab today, Mon., Tues. Labs restart next week. Midterm #1 Tues. Oct. 7 th, 6:308:00pm in 105 Northgate
EE4Fall 2008 Digital Integrated Circuits Lecture VTCs and Delay Lecture # Announcements No lab today, Mon., Tues. Labs restart next week Midterm # Tues. Oct. 7 th, 6:308:00pm in 05 Northgate Exam is
More informationLecture 5: CMOS Transistor Theory
Lecture 5: CMOS Transistor Theory Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline q q q q q q q Introduction MOS Capacitor nmos IV Characteristics
More informationThe CMOS Inverter: A First Glance
The CMOS Inverter: A First Glance V DD V in V out C L CMOS Properties Full railtorail swing Symmetrical VTC Propagation delay function of load capacitance and resistance of transistors No static power
More informationSpiral 2 7. Capacitance, Delay and Sizing. Mark Redekopp
27.1 Spiral 2 7 Capacitance, Delay and Sizing Mark Redekopp 27.2 Learning Outcomes I understand the sources of capacitance in CMOS circuits I understand how delay scales with resistance, capacitance
More informationLecture 4: CMOS review & Dynamic Logic
Lecture 4: CMOS review & Dynamic Logic Reading: ch5, ch6 Overview CMOS basics Power and energy in CMOS Dynamic logic 1 CMOS Properties Full railtorail swing high noise margins Logic levels not dependent
More informationEE 466/586 VLSI Design. Partha Pande School of EECS Washington State University
EE 466/586 VLSI Design Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Lecture 9 Propagation delay Power and delay Tradeoffs Follow board notes Propagation Delay Switching Time
More informationLecture Outline. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Review: 1st Order RC Delay Models. Review: TwoInput NOR Gate (NOR2)
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 14: March 1, 2016 Combination Logic: Ratioed and Pass Logic Lecture Outline! CMOS Gates Review " CMOS Worst Case Analysis! Ratioed Logic Gates!
More informationDigital Integrated Circuits A Design Perspective
igital Integrated Circuits esign Perspective esigning Combinational Logic Circuits 1 Combinational vs. Sequential Logic In Combinational Logic Circuit Out In Combinational Logic Circuit Out State Combinational
More informationWhere Does Power Go in CMOS?
Power Dissipation Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit Currents Short Circuit Path between Supply Rails during Switching Leakage Leaking
More informationDC and Transient Responses (i.e. delay) (some comments on power too!)
DC and Transient Responses (i.e. delay) (some comments on power too!) Michael Niemier (Some slides based on lecture notes by David Harris) 1 Lecture 02  CMOS Transistor Theory & the Effects of Scaling
More informationThe Inverter. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Inverter Revised from Digital Integrated Circuits, Jan M. Rabaey el, 2003 Propagation Delay CMOS
More informationToday s lecture. EE141 Spring 2003 Lecture 4. Design Rules CMOS Inverter MOS Transistor Model
 Spring 003 Lecture 4 Design Rules CMOS Inverter MOS Transistor Model Today s lecture Design Rules The CMOS inverter at a glance An MOS transistor model for manual analysis Important! Labs start next
More informationMOSFET: Introduction
E&CE 437 Integrated VLSI Systems MOS Transistor 1 of 30 MOSFET: Introduction Metal oxide semiconductor field effect transistor (MOSFET) or MOS is widely used for implementing digital designs Its major
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationEE5311 Digital IC Design
EE5311 Digital IC Design Module 3  The Inverter Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai September 6, 2017 Janakiraman, IITM
More information! Inverter Power. ! Dynamic Characteristics. " Delay ! P = I V. ! Tricky part: " Understanding I. " (pairing with correct V) ! Dynamic current flow:
ESE 570: Digital Integrated ircuits and LSI Fundamentals Lecture Outline! Inverter Power! Dynamic haracteristics Lec 10: February 15, 2018 MOS Inverter: Dynamic haracteristics " Delay 3 Power Inverter
More informationLecture 5: DC & Transient Response
Lecture 5: DC & Transient Response Outline q Pass Transistors q DC Response q Logic Levels and Noise Margins q Transient Response q RC Delay Models q Delay Estimation 2 Activity 1) If the width of a transistor
More informationVLSI Design and Simulation
VLSI Design and Simulation CMOS Inverters Topics Inverter VTC Noise Margin Static Load Inverters CMOS Inverter FirstOrder DC Analysis R p V OL = 0 V OH = R n =0 = CMOS Inverter: Transient Response R p
More informationProperties of CMOS Gates Snapshot
MOS logic 1 Properties of MOS Gates Snapshot High noise margins: V OH and V OL are at V DD and GND, respectively. No static power consumption: There never exists a direct path between V DD and V SS (GND)
More informationLecture 4: CMOS Transistor Theory
Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris, Harvey Mudd College Kartik Mohanram and Steven Levitan University of Pittsburgh Outline q Introduction q MOS Capacitor q
More informationLecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS
Lecture 12 Digital Circuits (II) MOS INVERTER CIRCUITS Outline NMOS inverter with resistor pullup The inverter NMOS inverter with currentsource pullup Complementary MOS (CMOS) inverter Static analysis
More informationAnnouncements. EE141 Spring 2003 Lecture 8. Power Inverter Chain
 Spring 2003 Lecture 8 Power Inverter Chain Announcements Homework 3 due today. Homework 4 will be posted later today. Special office hours from :303pm at BWRC (in lieu of Tuesday) Today s lecture Power
More informationEE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing
EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104113) S R on D CMOS Manufacturing Process (pp. 3646) S S C GS G G C GD
More informationEECS 427 Lecture 11: Power and Energy Reading: EECS 427 F09 Lecture Reminders
EECS 47 Lecture 11: Power and Energy Reading: 5.55 [Adapted from Irwin and Narayanan] 1 Reminders CAD5 is due Wednesday 10/8 You can submit it by Thursday 10/9 at noon Lecture on 11/ will be taught by
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 18: March 27, 2018 Dynamic Logic, Charge Injection Lecture Outline! Sequential MOS Logic " DLatch " Timing Constraints! Dynamic Logic " Domino
More informationESE570 Spring University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals
University of Pennsylvania Department of Electrical and System Engineering Digital Integrated Cicruits AND VLSI Fundamentals ESE570, Spring 2018 Final Monday, Apr 0 5 Problems with point weightings shown.
More informationLecture 6 Power Zhuo Feng. Z. Feng MTU EE4800 CMOS Digital IC Design & Analysis 2010
EE4800 CMOS Digital IC Design & Analysis Lecture 6 Power Zhuo Feng 6.1 Outline Power and Energy Dynamic Power Static Power 6.2 Power and Energy Power is drawn from a voltage source attached to the V DD
More informationPower Consumption in CMOS CONCORDIA VLSI DESIGN LAB
Power Consumption in CMOS 1 Power Dissipation in CMOS Two Components contribute to the power dissipation:» Static Power Dissipation Leakage current Subthreshold current» Dynamic Power Dissipation Short
More informationCMPEN 411 VLSI Digital Circuits Spring 2012
CMPEN 411 VLSI Digital Circuits Spring 2012 Lecture 09: Resistance & Inverter Dynamic View [Adapted from Rabaey s Digital Integrated Circuits, Second Edition, 2003 J. Rabaey, A. Chandrakasan, B. Nikolic]
More informationThe Devices. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002
Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic The Devices July 30, 2002 Goal of this chapter Present intuitive understanding of device operation Introduction
More informationP. R. Nelson 1 ECE418  VLSI. Midterm Exam. Solutions
P. R. Nelson 1 ECE418  VLSI Midterm Exam Solutions 1. (8 points) Draw the crosssection view for AA. The crosssection view is as shown below.. ( points) Can you tell which of the metal1 regions is the
More informationEE5311 Digital IC Design
EE5311 Digital IC Design Module 3  The Inverter Janakiraman V Assistant Professor Department of Electrical Engineering Indian Institute of Technology Madras Chennai September 3, 2018 Janakiraman, IITM
More informationCOMP 103. Lecture 16. Dynamic Logic
COMP 03 Lecture 6 Dynamic Logic Reading: 6.3, 6.4 [ll lecture notes are adapted from Mary Jane Irwin, Penn State, which were adapted from Rabaey s Digital Integrated Circuits, 2002, J. Rabaey et al.] COMP03
More informationCOMBINATIONAL LOGIC. Combinational Logic
COMINTIONL LOGIC Overview Static CMOS Conventional Static CMOS Logic Ratioed Logic Pass Transistor/Transmission Gate Logic Dynamic CMOS Logic Domino npcmos Combinational vs. Sequential Logic In Logic
More informationPMOS Device and CMOS Inverters
Lecture 23 PMOS Device and CMOS Inverters A) PMOS Device Structure and Oeration B) Relation of Current to t OX, µ V LIMIT C) CMOS Device Equations and Use D) CMOS Inverter V OUT vs. V IN E) CMOS Short
More informationESE 570 MOS INVERTERS DYNAMIC CHARACTERISTICS. Kenneth R. Laker, University of Pennsylvania, updated 26Feb15
ESE 570 MOS INVERTERS DYNAMIC CHARACTERISTICS 1 Usually Cdb >> Cgd & Csb >> Cgs extrinsic parasitic caps n = fanout 1 # dbn Cload = C + #C# dbp +#C# gdn +#C# gdp +# C # int + ncgb Parasitic Caps updated
More informationEE 434 Lecture 33. Logic Design
EE 434 Lecture 33 Logic Design Review from last time: Ask the inverter how it will interpret logic levels V IN V OUT V H =? V L =? V LARGE V H V L V H Review from last time: The twoinverter loop X Y X
More informationEE241  Spring 2000 Advanced Digital Integrated Circuits. Announcements
EE241  Spring 2 Advanced Digital Integrated Circuits Lecture 11 Low PowerLow Energy Circuit Design Announcements Homework #2 due Friday, 3/3 by 5pm Midterm project reports due in two weeks  3/7 by 5pm
More informationCPE/EE 427, CPE 527 VLSI Design I Delay Estimation. Department of Electrical and Computer Engineering University of Alabama in Huntsville
CPE/EE 47, CPE 57 VLSI Design I Delay Estimation Department of Electrical and Computer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka ) Review: CMOS Circuit
More informationLecture 5. MOS Inverter: Switching Characteristics and Interconnection Effects
Lecture 5 MOS Inverter: Switching Characteristics and Interconnection Effects Introduction C load = (C gd,n + C gd,p + C db,n + C db,p ) + (C int + C g ) Lumped linear capacitance intrinsic cap. extrinsic
More informationLecture 12 Circuits numériques (II)
Lecture 12 Circuits numériques (II) Circuits inverseurs MOS Outline NMOS inverter with resistor pullup The inverter NMOS inverter with currentsource pullup Complementary MOS (CMOS) inverter Static analysis
More informationCMOS Transistors, Gates, and Wires
CMOS Transistors, Gates, and Wires Should the hardware abstraction layers make today s lecture irrelevant? pplication R P C W / R W C W / 6.375 Complex Digital Systems Christopher atten February 5, 006
More informationDigital Microelectronic Circuits ( )
Digital Microelectronic ircuits (36113021 ) Presented by: Dr. Alex Fish Lecture 5: Parasitic apacitance and Driving a Load 1 Motivation Thus far, we have learned how to model our essential building block,
More information! MOS Capacitances. " Extrinsic. " Intrinsic. ! Lumped Capacitance Model. ! First Order Capacitor Summary. ! Capacitance Implications
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 7: February, 07 MOS SPICE Models, MOS Parasitic Details Lecture Outline! MOS Capacitances " Extrinsic " Intrinsic! Lumped Capacitance Model!
More informationLecture 81. Low Power Design
Lecture 8 Konstantinos Masselos Department of Electrical & Electronic Engineering Imperial College London URL: http://cas.ee.ic.ac.uk/~kostas Email: k.masselos@ic.ac.uk Lecture 81 Based on slides/material
More informationLecture 6: DC & Transient Response
Lecture 6: DC & Transient Response Slides courtesy of Deming Chen Slides based on the initial set from David Harris CMOS VLSI Design Outline Pass Transistors DC Response Logic Levels and Noise Margins
More informationTopic 4. The CMOS Inverter
Topic 4 The CMOS Inverter Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ Email: p.cheung@ic.ac.uk Topic 41 Noise in Digital Integrated
More informationLecture 13  Digital Circuits (II) MOS Inverter Circuits. March 20, 2003
6.012 Microelectronic Devices and Circuits Spring 2003 Lecture 131 Lecture 13 Digital Circuits (II) MOS Inverter Circuits March 20, 2003 Contents: 1. NMOS inverter with resistor pullup (cont.) 2. NMOS
More information