Important! EE141 Fall 2002 Lecture 5. CMOS Inverter MOS Transistor Model


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1  Fall 00 Lecture 5 CMO Inverter MO Transistor Model Important! Lab 3 this week You must show up in one of the lab sessions this week If you don t show up you will be dropped from the class» Unless you let me know that you still want to be in the class Homework is due next Tuesday, eptember 17.
2 Today s lecture The CMO inverter at a glance An MO transistor model for manual analysis What is a Transistor? A witch! A MO Transistor V G V T V G Ron
3 NMO and PMO NMO Transistor PMO Transistor V G >0 G V G <0 G The CMO Inverter: A First Glance V V in V out C L
4 CMO Inverter N Well V V PMO λ PMO Contacts In Out In Out Metal 1 NMO Polysilicon NMO GN Two Inverters hare power and ground Abut cells V Connect in Metal
5 witch Model of CMO Transistor V G R on V G < V T V G > V T CMO Inverter: teady tate Response V V R onp V OH = V V out V out V OL = 0 R onn V M = f(r onn, R onp ) V in = V V in = 0
6 CMO Inverter: Transient Response V t phl = f(r on.c L ) = 0.69 R on C L V out V out ln(0.5) R on C L 1 V V in = V R on C L t CMO Properties Full railtorail swing ymmetrical VTC Propagation delay function of load capacitance and resistance of transistors No static power dissipation irect path current during switching
7 The MO Transistor Polysilicon Aluminum MO Transistors  Types and ymbols G G NMO Enhancement NMO epletion G G B PMO Enhancement NMO with Bulk Contact
8 Threshold Voltage: Concept V G + G n + n + nchannel psubstrate epletion region B The Threshold Voltage Threshold Fermi potential φ F is approximately  0.6V for ptype substrates γ the body factor V T0 is approximately 0.45V for our process
9 The Body Effect V T (V) V (V) B The rain Current Charge in the channel is controlled by the gate voltage: rain current is proportional to charge and velocity:
10 The rain Current Combining velocity and charge: Integrating over the channel: Transconductance: Transistor in Linear Linear (Resistive) mode V G G V I n + V(x) + n + L x psubstrate B MO transistor and its bias conditions
11 Transistor in aturation V G G V > V G  V T n+  V G  V T + n+ Pinchoff aturation For V G < V T, the drain current saturates I kn = W L ( V V ) G T Including channellength modulation I kn W = G T 1 L ( V V ) ( + λv )
12 Modes of Operation Cutoff: V G < V T I = 0 V T < V G ; V G V T > V Resistive: k I = n aturation: W L ( V V ) G V T V V T < V G ; V G V T < V I kn = W L ( V V ) G T CurrentVoltage Relations A Good Ol Transistor 4 x 10 6 VG=.5 V I (A) Resistive aturation VG=.0 V V = V G V T VG= 1.5 V Quadratic Relationship 1 VG= 1.0 V V (V)
13 A model for manual analysis CurrentVoltage Relations The eepubmicron Era 4.5 x 10 Early aturation VG=.5 V I (A) VG=.0 V VG= 1.5 V Linear Relationship 0.5 VG= 1.0 V V (V)
14 Velocity aturation υ n (m/s) υ sat = 10 5 Constant velocity Constant mobility (slope = µ) ξ c = 1.5 ξ (V/µm) Velocity aturation I Longchannel device V G = V hortchannel device V AT V G V T V
15 I versus V G 6 x x quadratic 1.5 linear I (A) 3 I (A) V G (V) Long Channel 0.5 quadratic V G (V) hort Channel I versus V I (A) 6 x VG=.5 V Resistive aturation VG=.0 V V = V G V T VG= 1.5 V I (A) 4.5 x VG=.5 V VG=.0 V VG= 1.5 V 1 VG= 1.0 V 0.5 VG= 1.0 V V (V) Long Channel V (V) hort Channel
16 Including Velocity aturation Approximate velocity: And integrate current again: In deep submicron, there are four regions of operation: (1) cutoff, () resistive, (3) saturation and (4) velocity saturation Regions of Operation Long Channel hort Channel
17 An Unified Model for Manual Analysis G B Regions of Operation 4 x 10.5 V =V AT 1.5 Linear Velocity aturated I (A) V AT =V GT V =V GT aturated V (V)
18 A PMO Transistor 0 x 104 VG = 1.0V 0. VG = 1.5V 0.4 I (A) 0.6 VG = .0V Assume all variables negative! 0.8 VG = .5V V (V) Transistor Model for Manual Analysis
19 The Transistor as a witch V G V T Ron I V G = V R mid R 0 V / V V The Transistor as a witch 7 x R eq (Ohm) V (V)
20 The Transistor as a witch Future Perspectives 5 nm MO transistor (Folded Channel)
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