Smart High-Side Power Switch

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Alicia Richard
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Smar ighside Power Swich PROFET BTS10F2 Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads

1 Smar ighside Power Swich PROFET BTS10F2 Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion 1 ) Undervolage and overvolage shudown wih auoresar and hyseresis Open drain diagnosic oupu Open load deecion in ONsae CMOS compaible inpu oss of ground and loss of bb proecion Elecrosaic discharge (ESD) proecion Green Produc (RoS complian) AEC Qualified Produc Summary Overvolage proecion bb(az) 65 Operaing volage bb(on) Onsae resisance RON 220 m oad curren (SO) (SO) 1.8 A Curren limiaion (SCr) 2.7 A PGTO2652 Applicaion C compaible power swich wih diagnosic feedback for 12 and 2 DC grounded loads Mos suiable for inducive loads Replaces elecromechanical relays, fuses and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, monolihically inegraed in Smar SPMOS echnology. Providing embedded proecive funcions. olage source Overvolage proecion Curren limi Gae proecion + bb ogic 2 ESD olage sensor ogic Charge pump evel shifer Recifier imi for unclamped ind. loads Open load deecion Temperaure sensor 5 oad Shor circui deecion PROFET 1 Signal oad 1 ) Wih exernal curren limi (e.g. resisor R =150 ) in connecion, resisors in series wih and connecions, reverse load curren limied by conneced load. Daa Shee

2 BTS10F2 Pin Symbol Funcion 1 ogic ground 2 npu, acivaes he power swich in case of logical high signal bb + Posiive power supply volage, he ab is shored o his pin S Diagnosic feedback, low on failure 5 (oad, ) O Oupu o he load Maximum Raings a Tj = 25 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page ) bb 65 oad dump proecion 2 ) oaddump = U A + s, U A = 1.5 ) oad dump 100 R ) = 2, R = 6.6, d = 00 ms, = low or high oad curren (Shor circui curren, see page ) selflimied A Operaing emperaure range T j C Sorage emperaure range T sg Power dissipaion (DC), T C 25 C P o 50 W nducive load swichoff energy dissipaion, single pulse bb = 12, T j,sar = 150 C, T C = 150 C cons. = 1.8 A, Z = 2., 0 : E AS.5 J Elecrosaic discharge capabiliy (ESD) : ESD 1 k (uman Body Model) all oher pins: 2 acc. MD88D, mehod and ESD assn. sd. S npu volage (DC) Curren hrough inpu pin (DC) 5.0 ma Curren hrough saus pin (DC) 5.0 see inernal circui diagrams page 6 Thermal Characerisics Parameer and Condiions Symbol alues Uni min yp max Thermal resisance chip case: juncion ambien (free air): R hjc R hja K/W SMD version, device on PCB 5 ) : 5 2 ) Supply volages higher han bb(az) require an exernal curren limi for he and saus pins, e.g. wih a 150 resisor in he connecion and a 15 k resisor in series wih he saus pin. A resisor for he proecion of he inpu is inegraed. ) R = inernal resisance of he load dump es pulse generaor ) oad dump is seup wihou he DUT conneced o he generaor per SO 7671 and D ) Device on 50mm*50mm*1.5mm epoxy PCB FR wih 6cm 2 (one layer, 70 m hick) copper area for bb connecion. PCB is verical wihou blown air. Daa Shee

3 Elecrical Characerisics BTS10F2 Parameer and Condiions Symbol alues Uni a Tj = 25 C, bb = 12 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics Onsae resisance (pin o 5) = 1.6 A T j =25 C: R ON 190 T j =150 C: 90 0 Nominal load curren, SO Norm (pin o 5) ON = 0.5, T C = 85 C (SO) A Oupu curren (pin 5) while disconneced or (high) 1 ma pulled up, bb=0, = 0, see diagram page 7, Tj = C Turnon ime o 90% : on s Turnoff ime o 10% : off 5 85 R = 12, Tj = C Slew rae on d /d on / s 10 o 0%, R = 12, Tj = C Slew rae off d/d off 6 / s 70 o 0%, R = 12, Tj = C Operaing Parameers Operaing volage 6 ) Tj = C: bb(on).7 2 Undervolage shudown Tj =25 C: Tj = C: bb(under) Undervolage resar Tj = C: bb(u rs).9 Undervolage resar of charge pump bb(ucp) see diagram page 1 Undervolage hyseresis bb(under) = bb(u rs) bb(under) bb(under) 0.1 Overvolage shudown Tj = C: bb(over) 2 52 Overvolage resar Tj = C: bb(o rs) 0 Overvolage hyseresis Tj = C: bb(over) 0.1 Overvolage proecion 7 ) Tj = C: bb(az) bb = ma Sandby curren (pin ) =0 eakage oupu curren (included in bb(off) ) =0 Operaing curren (Pin 1) 8 ), =5, Tj = C T j = C: T j = 150 C: bb(off) m A (off) 20 A ma 6 ) A supply volage increase up o bb = 5.6 yp wihou charge pump, bb 2 7 ) Meassured wihou load. See also ON(C) in able of proecion funcions and circui diagram page 7. 8 ) Add, if > 0, add, if >5.5 Daa Shee

4 BTS10F2 Parameer and Condiions Symbol alues Uni a Tj = 25 C, bb = 12 unless oherwise specified min yp max Proecion Funcions 9) niial peak shor circui curren limi (pin o 5) 10), ( max 50 s if ON > ON(SC) ) Tj =0 C: Tj =25 C: Tj =+150 C: (SCp) Overload shudown curren limi (SCr) ON = 8, T j = T j (see iming diagrams, page 11) 2.7 A Shor circui shudown delay afer inpu pos. slope ON > ON(SC), T j = C: d(sc) 50 s min value valid only, if inpu "low" ime exceeds 60 s Oupu clamp (inducive load swich off) a = bb ON(C) = 0 ma, T j = C: ON(C) = 1 A, T j = C: 75 Shor circui shudown deecion volage(pin o 5) ON(SC) 8.5 Thermal overload rip emperaure T j 150 C Thermal hyseresis T j 10 K Reverse baery (pin o 1) 11 ) bb A Diagnosic Characerisics Open load deecion curren (oncondiion) T j = C: (O) ma 9 ) negraed proecion funcions are designed o preven C desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 10 ) Shor circui curren limi for max. duraion of d(sc) max =50 s, prior o shudown 11 ) Requires 150 resisor in connecion. The reverse load curren hrough he inrinsic drainsource diode has o be limied by he conneced load. Noe ha he power dissipaion is higher compared o normal operaing condiions due o he volage drop across he inrinsic drainsource diode. The emperaure proecion is no acive during reverse curren operaion! npu and Saus currens have o be limied (see max. raings page 2 and circui page 7). Daa Shee

5 BTS10F2 Parameer and Condiions Symbol alues Uni a Tj = 25 C, bb = 12 unless oherwise specified min yp max npu and Saus Feedback 12 ) npu urnon hreshold volage T j (T+) npu urnoff hreshold volage T j =0. (T) 1.0 npu hreshold hyseresis (T) 0.5 Off sae inpu curren (pin 2), = 0. (off) 1 0 A On sae inpu curren (pin 2), = 5 (on) A Saus invalid afer posiive inpu slope d( SC) 50 s (shor circui) Tj= C: Saus invalid afer posiive inpu slope d() s (open load) Tj= C: Saus oupu (open drain) Zener limi volage Tj = C, = +50 ua: low volage Tj = C, = +1.6 ma: (high) (low) ) f a ground resisor R is used, add he volage drop across his resisor. Daa Shee

6 BTS10F2 Truh Table Normal operaion Open load npu Oupu Saus level level 12 B2 1 ) 15) 15) 10 D2 ( 1) ) 15 ) 15) 10 E2/F2 ( 1) ) 10 G2 ( 1) ) = "ow" evel = don' care Z = high impedance, poenial depends on exernal circui = "igh" evel Saus signal afer he ime delay shown in he diagrams (see fig 5. page ) Terms Saus oupu 10 2 bb 2 bb bb PROFET 1 R 5 ON R (ON) ESD ZD +5 npu circui (ESD proecion) R ESDZener diode: 6 yp., max 5 ma; R (ON) < 250 a 1.6 ma, ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o 1 ). Shor circui o Shor circui o bb Overemperaure Undervolage Overvolage ESD ZD1 ZD2 ZD1 6 yp., ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o 1 ). 1 ) Power Transisor off, high impedance, versions BTS 10, BTS 12B: inernal pull up curren source for open load deecion. 1 ) ow resisance shor bb o oupu may be deeced in ONsae by he noloaddeecion 15 ) No curren sink capabiliy during undervolage shudown Daa Shee

7 Shor circui deecion Faul Condiion: ON > 8.5 yp.; high + bb BTS10F2 Openload deecion ONsae diagnosic condiion: ON < R ON * (O) ; high + bb ON ogic uni Shor circui deecion ON ON nducive and overvolage oupu clamp ogic uni Open load deecion + bb Z ON disconnec ON clamped o 68 yp. PR OFET Overvol. and reverse ba. proecion + bb bb 2 PROFET 1 bb 5 R R ogic Z2 Any kind of load. n case of npu=high is (T+). Due o >0, no = low signal available. disconnec wih pull up Z1 PR OFET R Signal Z1 = 6.2 yp., Z2 = 70 yp., R = 150, R, R= 15 k 2 bb PROFET 1 5 bb Any kind of load. f > (T+) device says off Due o >0, no = low signal available. Daa Shee

8 BTS10F2 bb disconnec wih energized inducive load high 2 bb PROFET 1 5 wih an approximae soluion for R 0 : E AS = 2 R bb + (C) ) ln R (1+ ( (C) ) Maximum allowable load inducance for a single swich off = f ( ); T j,sar = 150 C,T C = 150 C cons., bb = 12, R = 0 [m] bb Normal load curren can be handled by he PROFET iself. bb disconnec wih charged exernal inducive load high 2 S bb PROFET 1 5 D 1000 bb f oher exernal inducive loads are conneced o he PROFET, addiional elemens like D are necessary. nducive oad swichoff energy dissipaion E bb [A] E AS bb E oad PROFET = Z { R E E R Energy sored in load inducance: E = 1 /2 2 While demagneizing load inducance, he energy dissipaed in PROFET is E AS = E bb + E E R = ON(C) i () d, Daa Shee

9 BTS10F2 Typ. ransien hermal impedance chip case Z hjc = f( p, D), D= p /T Z hjc [K/W] D= E5 1E 1E 1E2 1E1 1E0 1E1 p [s] Daa Shee

10 Opions Overview BTS10F2 all versions: ighside swich, npu proecion, ESD proecion, load dump and reverse baery proecion wih 150 in connecion, proecion agains loss of ground Type BTS 12 B2 10D2 10E2 10F2 10G ogic version B D E F G Overemperaure proecion wih hyseresis Tj >150 C, lach funcion 16 ) 17 ) Tj >150 C, wih auoresar on cooling Shor circui o proecion swiches off when ON >.5 yp. and bb > 7 yp 16) (when firs urned on afer approx. 150 s) swiches off when ON >8.5 yp. 16) (when firs urned on afer approx. 150 s) Achieved hrough overemperaure proecion Open load deecion in OFFsae wih sensing curren 0 A yp. in ONsae wih sensing volage drop across power ransisor Undervolage shudown wih auo resar Overvolage shudown wih auo resar 18 ) Saus feedback for overemperaure shor circui o shor o bb open load undervolage overvolage Saus oupu ype CMOS Open drain Oupu negaive volage ransien limi (fas inducive load swich off) 19) 19 ) 19) 19) o bb ON(C) oad curren limi high level (can handle loads wih high inrush currens) low level (beer proecion of applicaion) Proecion agains loss of 16 ) ach excep when bb < ON(SC) afer shudown. n mos cases = 0 afer shudown ( 0 only if forced exernally). So he device remains lached unless bb < ON(SC) (see page ). No lach beween urn on and d(sc). 17 ) Wih lach funcion. Reseed by a) npu low, b) Undervolage 18 ) No auo resar afer overvolage in case of shor circui 19 ) ow resisance shor bb o oupu may be deeced in ONsae by he noloaddeecion Daa Shee

11 BTS10F2 Timing diagrams Figure a: Turn on ino shor circui, Figure 1a: bb urn on: bb d(bb ) d(sc) A open drain A in case of oo early =high he device may no urn on (curve A) d(bb ) approx. 150 s d(sc) approx. s if bb > 8.5 yp. Figure b: Turn on ino overload, Figure 2a: Swiching an inducive load d() (SCp) *) (SCr) (O) *) if he ime consan of load is oo large, openloadsaus may occur eaing up may require several seconds, bb < 8.5 yp. Daa Shee

12 BTS10F2 Figure c: Shor circui while on: Figure 5a: Open load: deecion in ONsae, urn on/off o open load d() **) open **) curren peak approx. 20 s Figure a: Overemperaure, Rese if (=low) and (T j <T j ) Figure 5b: Open load: deecion in ONsae, open load occurs in onsae d( O1) d( O2) T J normal open normal *) goes high, when =low and Tj<Tj d( O1) = bd s yp., d( O2) = bd s yp Daa Shee

13 offsae onsae offsae BTS10F2 Figure 6a: Undervolage: Figure 7a: Overvolage: bb bb ON(C) bb(over) bb(o rs) bb(under) bb(u cp) bb(u rs) open drain Figure 6b: Undervolage resar of charge pump Figure 9a: Overvolage a shor circui shudown: on ON(C) bb bb(o rs) bb(over) Oupu shor o shor circui shudown bb(u rs) bb(o rs) bb(u cp) bb(under) bb charge pump sars a bb(ucp) =5.6 yp. Overvolage due o power line inducance. No overvolage auoresar of PROFET afer shor circui shudown. Daa Shee

14 Package and Ordering Code All dimensions in mm PGTO2652 BTS10F2 E062A Ordering code SP Published by nfineon Technologies AG, D81726 München nfineon Technologies AG 201 All Righs Reserved. Aenion please! BTS10F2 The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of noninfringemen, regarding circuis, descripions and chars saed herein. nfineon Technologies is an approved CECC manufacurer. nformaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares nfineon Technologies Office in Germany or our nfineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares nfineon Technologies Office. nfineon Technologies Componens may only be used in lifesuppor devices or sysems wih he express wrien approval of nfineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. ife suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Daa Shee

Smart Highside Power Switch

Smart Highside Power Switch Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion