Type Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2

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1 SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary ypes: SMBT96... MMBT96 SMBT94S: For orienaion in reel see package informaion below Pbfree (RoHS complian) package Qualified according AE Q Type Marking Pin onfiguraion Package SMBT94/MMBT94 sa =B =E = SOT SMBT94S sa =E =B = 4=E =B 6= SOT6 Maximum Raings Parameer Symbol Value Uni ollecoremier volage V EO 4 V ollecorbase volage V BO 6 Emierbase volage V EBO 6 ollecor curren I ma Toal power dissipaion P o mv T S 7, SOT, SMBT94 T S, SOT6, SMBT94S Juncion emperaure T j Sorage emperaure T sg 6... Thermal Resisance Parameer Symbol Value Uni Juncion soldering poin ) R hjs K/W SMBT94/MMBT94 SMBT94S 4 4 For calculaion of R hja please refer o Applicaion Noe AN77 (Thermal Resisance alculaion) 8 This Daa shee can be found on hps://

2 SMBT94...MMBT94 Elecrical haracerisics a T A =, unless oherwise specified Parameer Symbol Values Uni min. yp. max. D haracerisics ollecoremier breakdown volage I = ma, I B = ollecorbase breakdown volage I = µa, I E = Emierbase breakdown volage I E = µa, I = ollecorbase cuoff curren V B = V, I E = D curren gain ) I = µa, V E = V I = ma, V E = V I = ma, V E = V I = ma, V E = V I = ma, V E = V V (BR)EO 4 V V (BR)BO 6 V (BR)EBO 6 I BO na h FE ollecoremier sauraion volage ) V Esa V I = ma, I B = ma. I = ma, I B = ma. Base emier sauraion volage ) V BEsa I = ma, I B = ma.6.8 I = ma, I B = ma.9 Pulse es: < µs; D < % 8

3 SMBT94...MMBT94 Elecrical haracerisics a T A =, unless oherwise specified Parameer Symbol Values Uni min. yp. max. A haracerisics Transiion frequency f T MHz I = ma, V E = V, f = MHz ollecorbase capaciance cb. pf V B = V, f = MHz Emierbase capaciance eb 8 V EB =. V, f = MHz Delay ime d ns V = V, I = ma, I B = ma, V BE(off) =. V Rise ime r V = V, I = ma, I B = ma, V BE(off) =. V Sorage ime sg V = V, I = ma, I B = I B = ma Fall ime f V = V, I = ma, I B = I B = ma Noise figure I = µa, V E = V, f = khz, f = Hz, R S = kω F db 8

4 SMBT94...MMBT94 Tes circuis Delay and rise ime +. V ns D = % +.9 V 7 Ω <. ns. V kω <4. pf EHN6 Sorage and fall ime +. V < < µs D = % +.9 V 7 Ω kω 9. V N96 <4. pf <. ns EHN6 4 8

5 SMBT94...MMBT94 D curren gain h FE = ƒ(i ) V E = V, normalized Sauraion volage I = ƒ(v BEsa ; V Esa ) h FE = EHP76 Ι ma hfe V E V BE 4 ma I ollecorbase capaciance cb = ƒ(v B ) Emierbase capaciance eb = ƒ(v EB ) V. V BE sa Toal power dissipaion P o = ƒ(t S ) SMBT94/MMBT94,V E sa pf 9 6 mw B(EB) EB Po B A V B (V EB T S 8

6 SMBT94...MMBT94 Toal power dissipaion P o = ƒ(t S ) SMBT94S Permissible Pulse Load R hjs = ƒ( ) SMBT94/ MMBT94 mw K/W Po 7 RhJS 7 D= T S 6 4 s Permissible Pulse Load P omax /P od = ƒ( ) SMBT94/MMBT94 P P o max o D = D T T EHP9 Permissible Puls Load R hjs = ƒ ( ) SMBT94S K/W D = RhJS D = 6 4 s 6 4 s 6 8

7 SMBT94...MMBT94 Permissible Pulse Load Delay ime d = ƒ(i ) P omax /P od = ƒ( ) Rise ime r = ƒ(i ) SMBT94S Pomax/PoD D = r ns, d r d h FE = EHP76 V = V 4 V V V BE V = V 6 4 s Sorage ime sg = ƒ(i ) ma Ι Fall ime f = ƒ(i ) s ns h FE = EHP76 f ns EHP76 V = 4 V h FE = h FE = h FE = ma Ι ma Ι 7 8

8 SMBT94...MMBT94 Rise ime r = ƒ(i ) r ns EHP764 V h FE = 4 V = ma Ι 8 8

9 Package SOT SMBT94...MMBT94 Package Ouline +. ).4..9 ±..9 B.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX ±. A. M B. M A Foo Prin ) Lead widh can be.6 max. in dambar area Marking Layou (Example) EH s Manufacurer, June Dae code (YM) Pin BW66 Type code Sandard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel Pin.. 9 8

10 Package SOT6 SMBT94...MMBT94 Package Ouline ± x. M. MAX...9 ±. A Pin marking.6.6.±.. MIN Foo Prin Marking Layou (Example) Small variaions in posiioning of Dae code, Type code and Manufacure are possible. Manufacurer, June Dae code (Year/Monh) Pin marking Laser marking BR8S Type code Sandard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmeric ypes no defined Pin orienaion in reel ±.. M A Pin marking.. 8

11 SMBT94...MMBT94 Ediion 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office (< Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. Infineon Technologies componens may be used in lifesuppor devices or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 8

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U PNP Silicon Switching Transistors High D current gain:. ma to ma Low collectoremitter saturation voltage For SMBT96S and SMBT96U: Two (galvanic) internal isolated transistor with good matching in one package