Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E
|
|
- Gwen Owen
- 5 years ago
- Views:
Transcription
1 , PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration Package DKs BMs = B = B = E = E = C = C SOT SOT Maximum Ratings Parameter Symbol Unit Collectoremitter voltage V CEO V Collectorbase voltage V CBO Emitterbase voltage V EBO DC collector current I C 8 ma Peak collector current I CM A Base current I B ma Peak base current I BM Total power dissipation, T S = 79 C P tot Junction temperature T j C Storage temperature T stg 6... Thermal Resistance Junction soldering point ) R thjs K/W For calculation of RthJA please refer to Application Note Thermal Resistance mw Jul
2 , Electrical Characteristics at T A = C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = Collectorbase breakdown voltage I C = µa, I B = Emitterbase breakdown voltage I E = µa, I C = Collector cutoff current V CB = 8 V, I E = V CB = V, I E = Collector cutoff current V CB = 8 V, I E =, T A = C V CB = V, I E =, T A = C Emitter cutoff current V EB = 4 V, I C = Collector cutoff current V CE = V, T A = 8 C V CE = V, T A = C DC current gain ) I C = µa, V CE = V I C = ma, V CE = V I C = ma, V CE = V I C = ma, V CE = V I C = ma, V CE = V V (BR)CEO V (BR)CBO V V (BR)EBO I CBO I CBO na µa I EBO na I CEO h FE µa ) Pulse test: t µs, D = % Jul
3 , Electrical Characteristics at T A = C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter saturation voltage) I C = ma, I B = ma I C = ma, I B =. ma I C = 7 ma, I B = 7. ma Baseemitter saturation voltage ) I C = ma, I B = ma V CEsat V.9..9 V BEsat.4 AC Characteristics Transition frequency I C = ma, V CE = V, f = MHz Collectorbase capacitance V CB = V, f = MHz f T C cb MHz pf Jul
4 , Total power dissipation P tot = f(t S ) Collector current I C = f (V BE ) V CE = V 6 mw ma EHP49 Ι C 7 Ptot 4 8 T A = C C C C T S V V BE Permissible pulse load P totmax / P totdc = f (t p ) Transition frequency f T = f (I C ) V CE = V P P tot max tot DC t p = D T t p T EHP4 f MHz T EHP4 D = s t p ma 4 Jul
5 , Baseemitter saturation voltage I C = f (V BEsat ), h FE = Collectoremitter saturation voltage I C = f (V CEsat ), h FE = EHP4 EHP4 ma ma C C C C C C V V BE sat 4 6 mv 8 V CE sat Collector cutoff current I CBO = f (T A ) V CB = V DC current gain h FE = f (I C ) V CE = V na 4 EHP44 EHP4 B max h FE C C C typ C T A ma Jul
6 Published by Infineon Technologies AG, St.MartinStrasse, 8669 München Infineon Technologies AG 4. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2
NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collectoremitter saturation voltage C1 (2) C2 (1) 2 Tr.1 Tr.2 1 VPS05178 E1 ()
More informationType Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
PNP Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary type: BCX4 (NPN) Pbfree (RoHS compliant) package Qualified
More informationType Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BCX69 (PNP) Pbfree (RoHS compliant) package )
More informationType Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223
BCP68 NPN Silicon AF Transistor For general AF applications High collector current High current gain 4 Low collectoremitter saturation voltage Complementary type: BCP69 (PNP) Pbfree (RoHS compliant) package
More informationBCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223
BCP...BCP... PNP Silicon AF Transistors For AF driver and output stages High collector current Low collectoremitter saturation voltage Complementary types: BCP4... BCP6 (NPN) Pbfree (RoHS compliant) package
More informationBDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain
BDP97_BDP99_BDP95 Silicon NPN Transistors For AF driver and output stages High collector current High current gain Low collectoremitter saturation voltage Complementary types: BDP98, BDP95, BDP95 (PNP)
More informationType Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223
NPN Silicon HighVoltage Transistors Suitable for video output stages TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage Complementary type: BFN9 (PNP)
More informationType Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E
BSP6 PNP Silicon Darlington Transistor High collector current Low collectoremitter saturation voltage Complementary types: BSP0...BSP (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AEC
More informationType Marking Pin Configuration Package BFN24 BFN26 1=B 1=B
BFN4, BFN6 NPN Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collectoremitter saturation voltage Complementary type:
More informationType Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40
PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collectoremitter saturation voltage Complementary type: BC87.../W, BC88.../W (NPN) Pbfree (RoHS compliant)
More informationC1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
BC87UPN NPN Silicon AF Transistor Array For AF stages and driver applications High current gain Low collectoremitter saturation voltage 4 6 Two (galvanic) internal isolated NPN/PNP transistors in one package
More informationType Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
NPN Silicon AF Transistor Array Precision matched transistor pair: I C % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors Complementary
More informationBCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (NPN) Pbfree
More informationBCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage
BCW6, BCX7 NPN Silicon A Transistors or A input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BCW6, BCX7 (PNP)
More informationType Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Pbfree (RoHS compliant) package Qualification
More informationType Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package ) Qualified according AE Q
More informationPb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1
PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified
More informationType Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz 3 Pbfree (RoHS compliant) and halogenfree
More informationBFS483. Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor For low noise, highgain broadband amplifiers at collector currents from ma to 30 ma f T = 8 GHz, NF min = 0.9 db at 900 MHz Two (galvanic) internal isolated Transistor
More informationType Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads
More informationType Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor For lownoise, high gain broadband amplifiers at collector currents from ma to 0 ma Pbfree (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,
More informationType Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B
NPN Silicon AF Transistors For general AF applications High current gain Low collectoremitter saturation voltage omplementary type: BW68 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type
More informationBFS469L6. World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3)
NPN Silicon RF TWIN Transistor Preliminary data Low voltage/ low current applications Ideal for VCO modules and low noise amplifiers Low noise figure: :.db at.8 GHz :. db at.8 GHz 6 4 3 2 World's smallest
More informationType Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 0 ma to 70 ma Pbfree (RoHS compliant)
More informationType Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23
SMBTA6/MMBTA6 NPN Silicon AF Transistor Low collectoremitter saturation voltage omplementary type: SMBTA 6 / MMBTA6 (PNP) Pbfree (RoHS compliant) package Qualified according AE Q Type Marking Pin onfiguration
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For lowdistortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 70 ma to 30 ma Power amplifiers for DECT and
More informationType Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23
PNP Silicon HighVoltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage 2 Low collectoremitter saturation voltage omplementary types: BFN26 (NPN)
More informationType Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 ma to 30 ma 3 1 2 Pbfree (RoHS compliant) package Qualified according AEC Q1 ESD (Electrostatic
More informationType Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BM86S PNP Silicon AF Transistor Array Precision matched transistor pair: I % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors omplementary
More informationType Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23
PNP Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBTA / MMBTA (NPN) 1 Pbfree (RoHS compliant) package 1) Qualified according AE Q1 Type Marking Pin onfiguration
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 9 GHz, F = db at GHz Pbfree (RoHS compliant) package ) Qualified according AEC Q0 * Short
More informationType Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23
SMBTA/MMBTA NPN Silicon Switching Transistor Low collectoremitter saturation voltage omplementary type: SMBT97A / MMBT97A (PNP) 1 Pbfree (RoHS compliant) package Qualified according AE Q1 Type Marking
More informationBC BC Pb-containing package may be available upon special request
BC846...BC8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz Complementary types: BC86...BC86...(PNP)
More informationBFP193. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device,
More informationType Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For broadband amplifiers up to GHz and fast nonsaturated switches at collector currents from 0.5 ma to 0 ma Complementary type: BFT9 (PNP) * Short term description ESD (Electrostatic
More informationSMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U
PNP Silicon Switching Transistors High D current gain:. ma to ma Low collectoremitter saturation voltage For SMBT96S and SMBT96U: Two (galvanic) internal isolated transistor with good matching in one package
More informationBFP196W. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT
More informationBC BC Pb-containing package may be available upon special request
B86...B86... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between hz and khz omplementary types: B846...B8...
More information2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E
B847...B8... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between Hz and khz omplementary types: B87...B86...(PNP)
More informationBFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz
NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC Q * Short
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from ma to 0 ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according AEC
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23
NPN Silicon RF Transistor* For low noise, highgain broadband amplifiers at collector currents from 0.5 ma to ma f T = 8 GHz, F = 0.9 db at 900 MHz Pbfree (RoHS compliant) package ) Qualified according
More informationBFP196W. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT
More informationBCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C
PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with
More informationBAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw
Silicon Low Leakage Diode Array Lowleakage applications Medium speed switching times Pbfree (RoHS compliant) package 1) Qualified according AEC Q11 BAV17!,, Type Package Configuration Marking BAV17 SOT23
More informationBAW56 BAW56S BAW56T BAW56U BAW56W
Silicon Switching Diode For highspeed switching applications Common anode configuration BAW56S / U: For orientation in reel see package information below BAW56 BAW56T BAW56W BAW56S BAW56U! $ # ",!, ",,,,!
More informationType Package Configuration Marking BAS28 BAS28W
Silicon Switching Diode For highspeed switching applications Electrical insulated diodes Pbfree (RoHS compliant) package ) Qualified according EC Q /W "!,, Type Package Configuration Marking W SOT SOT
More informationBC807-16W/-25W/-40W Taiwan Semiconductor
200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS
More informationPG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationthinq! SiC Schottky Diode
SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the
More informationIGW25T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationTrenchStop Series. P t o t 270 W
Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationSGP20N60 SGW20N60. Fast IGBT in NPT-technology
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationSoft Switching Series
Reverse Conducting IGBT with monolithic body diode Features: 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for T Jmax = 175 C Trench and Fieldstop
More information60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current
Reverse Conducting IGBT with monolithic body diode Features: 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : very tight parameter distribution high
More informationIGW15T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Approx. 1.0V reduced V CE(sat) compared to BUP313 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop
More informationTrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive
More informationI FSM P tot 500 mw. 150 C Storage temperature T stg
Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at m High reverse voltage Pbfree (RoHS compliant) package ) Qualified according EC Q BS5V ESD (Electrostatic discharge)
More informationIDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationTrenchStop Series I C
Low Loss IGBT in TrenchStop and Fieldstop technology Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5µs Designed for : Freuency Converters Uninterrupted
More informationSoft Switching Series I C I F I FSM
Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200
More informationIDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationIGP03N120H2 IGW03N120H2
HighSpeed 2Technology Designed for: SMPS Lamp Ballast ZVSConverter optimised for softswitching / resonant topologies G C E 2 nd generation HighSpeedTechnology for 1200V applications offers: loss reduction
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationsingle single single 150 C Operating temperature range T op Storage temperature T stg
Silicon PIN Diode Current-controlled RF resistor for switching and attenuating applications Frequency range MHz... 2 GHz Especially useful as antenna switch in TV-sat tuners Very low harmonics Pb-free
More informationSKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationBAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage Pb-free (RoHS compliant) package ) Qualified
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
More informationSGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07
Fast IGBT in NPT-technology Lower E off compared to previous generation Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter
More informationIKW40N120T2 TrenchStop 2 nd Generation Series
Low Loss DuoPack : IGBT in 2 nd generation TrenchStop with soft, fast recovery antiparallel Emitter Controlled Diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency Converters
More informationsingle, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R
Silicon PIN Diode Optimized for low current antenna switches in hand held applications Very low forward resistance (typ..5 Ω @ I F = ma) Low capacitance at zero volt reverse bias at frequencies above GHz
More information200mW, PNP Small Signal Transistor
200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and
More informationIDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
More informationBCR320U / BCR321U. LED Driver
BCR32U / BCR32U LED Driver Features Continuous output current up to 25m with external resistor Supply voltage up to 2V Digital PWM input up to khz frequency (BCR32U) Up to W power dissipation in a small
More informationBFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma
NPN Silicon RF Transistor For lownoise, highgain broadband amplifiers at collector currents from ma to ma VPS5 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin
More informationPreliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R 2=D 2=S 3=G2 3=G1
BF99... Silicon N_Channel MOSFET Tetrode Shortchannel transistor with high S / C quality factor For lownoise, gaincontrolled input stage up to GHz Pbfree (RoHS compliant) package ) Qualified according
More informationBCR420U / BCR421U. LED Driver
LED Driver Features Continuous output current up to 5m with external resistor Suitable for supply voltages of 4V and above Low side current control, µc compatible PWM input (BCR42U) up to khz Up to W power
More informationSKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More informationBSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.
BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationSGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation Short circuit withstand time 10 µs Designed for operation above 30 khz G C E NPT-Technology for 600V applications offers:
More informationLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency
More informationIDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
More informationBC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
More informationCOMPLEMENTARY NPN/PNP TRANSISTOR
SEMICONDUCTOR DATA SHEET COMPLEMENTARY NPN/PNP TRANSISTOR FEATURES Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
More informationsingle, leadless single single
Silicon PIN Diode Series diode for mobile communication in low loss transmitreceiver switches Band switch for TVtuners Very low forward resistance (typ..65 Ω @ 5 ma) Low capacitance (typ..5 pf @ V) Fast
More informationSKP10N60 SKB10N60, SKW10N60
Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationI C P tot 138 W
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation C Short circuit withstand time 10 µs Designed for operation above 30 khz G E NPT-Technology for 600V applications offers:
More informationSIPMOS Small-Signal-Transistor
Type SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic level BSS131 Product Summary V DS 24 V R DS(on),max 14 Ω I D.1 A dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23
More informationIKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Features: Automotive AEC Q101 ualified Designed for DC/AC converters
More informationProduct Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More informationPreliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on) 8 Ω Continuous
More information