Silicon Diffused Power Transistor
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- Francine Watts
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1 GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved RBSOA performance and is suiable for operaion up o 64 khz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collecor-emier volage peak value V BE = V - 5 V V CEO Collecor-emier volage (open base) - 8 V I C Collecor curren (DC) - 2 A I CM Collecor curren peak value - 3 A P o Toal power dissipaion T mb 25 C - 25 W V CEsa Collecor-emier sauraion volage I C = 6. A; I B =.2 A - 5. V I Csa Collecor sauraion curren 6. - A s Sorage ime I CM = 6. A; I B(end) =.55 A.7 2. µs PINNING - SOT93 PIN CONFIGURATION SYMBOL PIN base DESCRIPTION ab c 2 collecor 3 emier b ab collecor 2 3 e LIMITING VALUES Limiing values in accordance wih he Absolue Maximum Raing Sysem (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collecor-emier volage peak value V BE = V - 5 V V CEO Collecor-emier volage (open base) - 8 V I C Collecor curren (DC) - 2 A I CM Collecor curren peak value - 3 A I B Base curren (DC) - 8 A I BM Base curren peak value - 2 A -I B(AV) Reverse base curren average over any 2 ms period - 2 ma -I BM Reverse base curren peak value - 7 A P o Toal power dissipaion T mb 25 C - 25 W T sg Sorage emperaure C T j Juncion emperaure - 5 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R h j-mb Juncion o mouning base -. K/W R h j-a Juncion o ambien in free air 45 - K/W Turn-off curren. November 995 Rev.
2 STATIC CHARACTERISTICS T mb = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collecor cu-off curren 2 V BE = V; V CE = V CESMmax ma I CES V BE = V; V CE = V CESMmax ; ma T j = 25 C I EBO Emier cu-off curren V EB = 7.5 V; I C = A ma BV EBO Emier-base breakdown volage I B = ma V V CEOsus Collecor-emier susaining volage I B = A; I C = ma; V L = 25 mh V CEsa Collecor-emier sauraion volage I C = 6. A; I B =.2 A V V BEsa Base-emier sauraion volage I C = 6. A; I B =.2 A V h FE DC curren gain I C = A; V CE = 5 V 6 2 h FE I C = 6 A; V CE = 5 V DYNAMIC CHARACTERISTICS T mb = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collecor capaciance I E = A; V CB = V; f = MHz 45 - pf Swiching imes (64 khz line deflecion circui) I CM = 6. A; L C = 7 µh; C fb = 5.4 nf; I B(end) =.55 A; L B =.6 µh; -V BB = 2 V; (-di B /d = 3.33 A/µs) s Turn-off sorage ime.7 2. µs f Turn-off fall ime..2 µs + 5v -2R IC / ma Horizonal Oscilloscope Verical Hz R R 6V VCE / V min VCEOsus Fig.. Tes circui for V CEOsus. Fig.2. Oscilloscope display for V CEOsus. 2 Measured wih half sine-wave volage (curve racer). November Rev.
3 I C TRANSISTOR DIODE I CM VCC I B I B end LC 5 us 6.5 us IBend LB VCL 6 us -VBB T.U.T. CFB V CE Fig.3. Swiching imes waveforms. Fig.6. Tes Circui RBSOA. V CC = 4 V; -V BB = 4 V; L C = - 2 µh; V CL 5 V; L B = 3 µh; C FB = nf; I B (end) = - 2 A IC ICM 9 % h FE Tj = 85 C Tj = 25 C Tj = -4 C IB s IBend % f - IBM Fig.4. Swiching imes definiions... Fig.7. Typical DC curren gain. h FE = f (I C ) V CE = 5 V + 5 v nominal adjus for ICM.2. VBESAT / V Tj = 85 C Tj = 25 C Lc.9 IBend -VBB LB T.U.T. BY228 Cfb Fig.5. Swiching imes es circui IC/IB =. Fig.8. Typical base-emier sauraion volage. V BE sa = f (I C ); parameer I C /I B 3 5 November Rev.
4 VCESAT / V 4 s, f / us F Tj = 85 C Tj = 25 C IC/IB = IC =..5 5A 6A.5.. Fig.9. Typical collecor-emier sauraion volage. V CE sa = f (I C ); parameer I C /I B IB / A Fig.2. Typical collecor sorage and fall ime. s = f (I B ); f = f (I B ); parameer I C ; T j = 85 C; f = 64 khz VBESAT / V Tj = 85 C Tj = 25 C IC = 7A 6A 5A IB / A Fig.. Typical base-emier sauraion volage. V BE sa = f (I B ); parameer I C PD% Normalised Power Deraing Tmb / C Fig.3. Normalised power dissipaion. PD% = P D /P D 25 C = f (T mb ) Poff / W F Zh / (K/W) BU2525A IC =.5 6A 5A P D p p D = T IB / A Fig.. Typical urn-off losses. T j = 85 C Poff = f (I B ); parameer I C ; f = 64 khz D =. T E-6 E-4 E-2 E+ / s Fig.4. Transien hermal impedance. Z h j-mb = f(); parameer D = p /T November Rev.
5 BU2525A 3 F ICM =. p = 4 us 2 ICDC us Po 5 5 VCE / V Fig.6. Reverse bias safe operaing area. T j T jmax ms. ms DC. VCE / V Fig.5. Forward bias safe operaing area. T mb = 25 C I CDC & I CM = f(v CE ); I CM single pulse; parameer p Second-breakdown limis independan of emperaure. November Rev.
6 MECHANICAL DATA Dimensions in mm Ne Mass: 5 g 2 max 5.2 max max max 2 max 2.2 max dimensions wihin his zone are unconrolled min 3.6 min M.6 Fig.7. SOT93; pin 2 conneced o mouning base..4 Noes. Refer o mouning insrucions for SOT93 envelope. 2. Epoxy mees UL94 V a /8". November Rev.
7 DEFINITIONS Daa shee saus Objecive specificaion This daa shee conains arge or goal specificaions for produc developmen. This daa shee conains preliminary daa; supplemenary daa may be published laer. Produc specificaion This daa shee conains final produc specificaions. Limiing values Limiing values are given in accordance wih he Absolue Maximum Raing Sysem (IEC 34). Sress above one or more of he limiing values may cause permanen damage o he device. These are sress raings only and operaion of he device a hese or a any oher condiions above hose given in he Characerisics secions of his specificaion is no implied. Exposure o limiing values for exended periods may affec device reliabiliy. Applicaion informaion Where applicaion informaion is given, i is advisory and does no form par of he specificaion. Philips Elecronics N.V. 995 All righs are reserved. Reproducion in whole or in par is prohibied wihou he prior wrien consen of he copyrigh owner. The informaion presened in his documen does no form par of any quoaion or conrac, i is believed o be accurae and reliable and may be changed wihou noice. No liabiliy will be acceped by he publisher for any consequence of is use. Publicaion hereof does no convey nor imply any license under paen or oher indusrial or inellecual propery righs. LIFE SUPPORT APPLICATIONS These producs are no designed for use in life suppor appliances, devices or sysems where malfuncion of hese producs can be reasonably expeced o resul in personal injury. Philips cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Philips for any damages resuling from such improper use or sale. November Rev.
8 This daashee has been download from: Daashees for elecronics componens.
Silicon Diffused Power Transistor
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