Item Symbol Unit MBN800E33D Collector Emitter Voltage V CES V 3,300 Gate Emitter Voltage V GES V ±20 Collector Current. DC I C 800 A 1ms I Cp

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1 IGBT MODULE Spec.No.IGBT-SP-312 R4 P1 Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery diode. High reliabiliy, high durabiliy module. High hermal faigue durabiliy. (dela Tc=7 C, N>3,cycles) Isolaed hea sink (erminal o base). Uni in mm CIRCUIT DIAGRAM C C C G E E E ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Weigh: 9(g) Iem Symbol Uni Collecor Emier Volage V CES V 3,3 Gae Emier Volage V GES V ±2 Collecor Curren DC I C 8 A 1ms I Cp 1,6 Forward Curren DC I F 8 A 1ms I FM 1,6 Juncion Temperaure T j o C -4 ~ +125 Sorage Temperaure T sg o C -4 ~ +125 Isolaion Volage V ISO V RMS 6,(AC 1 minue) Screw Torque Terminals (M4/M8) - 2/15 (1) N m Mouning (M6) - 6 (2) Noes: (1) Recommended Value 1.8±.2/ N m ELECTRICAL CHARACTERISTICS (2) Recommended Value 5.5±.5N m Iem Symbol Uni Min. Typ. Max. Tes Condiions Collecor Emier Cu-Off Curren I CES ma V CE=3,3V, V GE=V, Tj=25 o C V CE=3,3V, V GE=V, Tj=125 o C Gae Emier Leakage Curren I GES na V GE=±2V, V CE=V, Tj=25 o C Collecor Emier Sauraion Volage V CE(sa) V I C=8A, V GE=15V, Tj=125 o C Gae Emier Threshold Volage V GE(TO) V V CE=1V, I C=8mA, Tj=25 o C Inpu Capaciance C ies nf Inernal Gae Resisance Rg(in) Ω V CE=1V, V GE=V, f=1khz, Tj=25 o C V CE=1V, V GE=V, f=1khz, Tj=25 o C Rise Time r V CC=1,65V, Ic=8A Swiching Times Turn On Time on L=12nH µs Fall Time f R G=4.7Ω (3) Turn Off Time off V GE=±15V, Tj=125 o C Peak Forward Volage Drop V FM V IF=8A, V GE=V, Tj=125 o C Reverse Recovery Time rr µs V CC=1,65V, IF=8A, L=12nH Tj=125 o C Turn On Loss E on(1%) J/P V CC=1,65V, Ic=8A, L=12nH Turn Off Loss E off(1%) J/P R G=4.7Ω (3) Reverse Recovery Loss E rr(1%) J/P V GE=±15V, Tj=125 o C Sray inducance module LSCE nh IGBT Rh(j-c) Thermal Impedance K/W Juncion o case FWD Rh(j-c) Conac Thermal Impedance Rh(c-f) K/W Case o fin Noes:(3) R G value is a es condiion value for evaluaion, no recommended value. Please, deermine he suiable R G value by measuring swiching behaviors. * Please conac our represenaives a order. * For improvemen, specificaions are subjec o change wihou noice. * For acual applicaion, please confirm his spec shee is he newes revision.

2 IGBT MODULE Spec.No.IGBT-SP-312 R4 P2 DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Fig.1 Swiching es circui Vce VL Ic VL Ls= dic ( d ) =L L Fig.2 Definiion of Ls Vce 9% Ic 1% 1% 1% Vge Vge 1% r 9% on Eon(1%)= Ic Vce d 3 Ic 7 f off 9% 8 8 1% 6 Vce Eoff(1%)= Ic Vce d 7 -Ic.1Vce Vce Irm.5Irm.1IF IF rr Err(1%)= IF Vce d 11 2 Eon(Full)= Ic Vce d 1 6 Eoff(Full)= Ic Vce d 5 Err(Full)= IF Vce d 1 9 Fig.3 Definiion of swiching loss

3 IGBT MODULE Spec.No.IGBT-SP-312 R4 P3 1. STATIC CHARACTERISTICS VGE=15V 16 Tj=25 13V 16 VGE=15V 13V 14 11V 14 11V Collecor Curren IC (A) Collecor Curren IC (A) Collecor-Emier Volage VCE (V) 5V Collecor-Emier Volage VCE (V) Collecor Curren vs.collecor o Emier Volage 16 Tj=25 Collecor Curren vs.collecor o Emier Volage Forward Curren IF (A) Forward Volage VF (V) Forward Volage of free-wheeling diode

4 IGBT MODULE Spec.No.IGBT-SP-312 R4 P4 2. DYNAMIC CHARACTERISTICS Swiching ime, on, r, off, f, rr (µs) Condiions Vcc=165V L=12nH RG=4.7Ω VGE=±15V off on r Turn-on Loss, Eon (J/pulse) Condiions Vcc=165V L=12nH RG=4.7Ω VGE=±15V Eon(Full) Eon(1%) 1. f rr. 5 1 Collecor Curren, Ic (A) 1.5 Turn-on Loss vs.collecor Curren Collecor Curren, Ic (A) Turn-on Loss vs.collecor Curren Condiions Vcc=165V L=12nH RG=4.7Ω VGE=±15V Condiions Vcc=165V L=12nH RG=4.7Ω VGE=±15V Err(Full) Turn-off Loss, Eoff (J/pulse) 1..5 Eoff(Full) Eoff(1%) Reverse Recovery Loss, Err (J/pulse) 1..5 Err(1%). 5 1 Collecor Curren, Ic (A) Turn-off Loss vs.collecor Curren. 5 1 Forward Curren, IF (A) Reverse Recovery Loss vs. Forward Curren

5 IGBT MODULE Spec.No.IGBT-SP-312 R4 P5 2. Condiions Tc=125 Vcc=165V IC=8A L=12nH VG=±15V Eon(full) 2. Condiions Tc=125 Vcc=165V IC=8A L=12nH VG=±15V IC VGE 1% VCE 1% Eoff(1%)= IC VCE d 7 Turn-on Loss, Eon (J/pulse) 1. Eon(1%) Turn-off Loss, Eoff (J/pulse) 1. 6 Eoff(full)= IC VCE d 5 Eoff(full) Eoff(1%) VCE IC 1% 1% VGE Eon(1%)= IC VCE d 3 2 Eon(full)= IC VCE d Condiions Tc=125 Vcc=165V IC=8A L=12nH VG=±15V Gae Resisance, Rg (Ω) Turn-on Loss vs. Gae Resisance Gae Resisance, Rg (Ω) Turn-off Loss vs. Gae Resisance Reverse Recovery Loss, Err (J/pulse) 1. Err(full) Err(1%).1VCE VCE IRM.1IF -IC IF Err(1%)= IC VCE d 11 1 Err(full)= IC VCE d Gae Resisance, Rg (Ω) Recovery Loss vs. Gae Resisance

6 IGBT MODULE Spec.No.IGBT-SP-312 R4 P6 3. SOA RBSOA 2 15 IC (A) RBSOA RBSOA diagram Hiachi rouine es condiions Tj=125 o C Vcc=2V Ic=16A Ls=12nH VGE=+/-15V RG=4.7Ω (Measured a auxiliary erminal) VCE (V)

7 IGBT MODULE Spec.No.IGBT-SP-312 R4 P7 Recovery SOA SOA diode Ic (A) VF (V) Pmax=1.6MW RecSOA RecSOA diagram Hiachi rouine es condiions Tj=125 o C Vcc=2V IF=16A Ls=12nH VGE=+/-15V RG=4.7Ω (Measured a auxiliary erminal)

8 IGBT MODULE Spec.No.IGBT-SP-312 R4 P8 4. TRANSIENT THERMAL IMPEDANCE.1 Transien hermal impedance Zh(j-c)(K/W).1.1 FWD IGBT Time (s) Transien hermal impedance curve

9 IGBT MODULE Spec.No.IGBT-SP-312 R4 P9 5. OUTLINE DRAWINGS Uni in mm Weigh: 9(g) 6. Negaive environmenal impac maerial Please noe he following negaive environmenal impac maerials are conained in he produc in order o keep produc characerisic and reliabiliy level. Maerial Lead (Pb) and is compounds Arsenic and is compounds Conained par Solder Si chip

10 IGBT MODULE Spec.No.IGBT-SP-312 R4 P1 HITACHI POWER SEMICONDUCTORS Noices 1. The informaion given herein, including he specificaions and dimensions, is subjec o change wihou prior noice o improve produc characerisics. Before ordering, purchasers are advised o conac Hiachi sales deparmen for he laes version of his daa shees. 2. Please be sure o read "Precauions for Safe Use and Noices" in he individual brochure before use. 3. In cases where exremely high reliabiliy is required(such as use in nuclear power conrol, aerospace and aviaion, raffic equipmen, life-suppor-relaed medical equipmen, fuel conrol equipmen and various kinds of safey equipmen), safey should be ensured by using semiconducor devices ha feaure assured safey or by means of users fail-safe precauions or oher arrangemen. Or consul Hiachi s sales deparmen saff. 4. In no even shall Hiachi be liable for any damages ha may resul from an acciden or any oher cause during operaion of he user s unis according o his daa shees. Hiachi assumes no responsibiliy for any inellecual propery claims or any oher problems ha may resul from applicaions of informaion, producs or circuis described in his daa shees. 5. In no even shall Hiachi be liable for any failure in a semiconducor device or any secondary damage resuling from use a a value exceeding he absolue maximum raing. 6. No license is graned by his daa shees under any paens or oher righs of any hird pary or Hiachi, Ld. 7. This daa shees may no be reproduced or duplicaed, in any form, in whole or in par, wihou he expressed wrien permission of Hiachi, Ld. 8. The producs (echnologies) described in his daa shees are no o be provided o any pary whose purpose in heir applicaion will hinder mainenance of inernaional peace and safey no are hey o be applied o ha purpose by heir direc purchasers or any hird pary. When exporing hese producs (echnologies), he necessary procedures are o be aken in accordance wih relaed laws and regulaions. For inquiries relaing o he producs, please conac neares overseas represenaives which is locaed Inquiry porion on he op page of a home page. Hiachi power semiconducor home page address hp://