< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module

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1 < HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

2 < HVIGBT MODULE > MAXIMUM RATINGS Symbol Item Conditions Ratings Unit V CES Collector-emitter voltage V GE = V 7 V V GES Gate-emitter voltage V CE = V, T j = 25 C ±2 V I C DC, T c = C 2 A Collector current I CRM Pulse (Note ) 24 A I E DC 2 A Emitter current (Note 2) I ERM Pulse (Note ) 24 A I 2 t Surge current load integral T j = 25 C, V R = V, t p = ms ka 2 s P tot Maximum power dissipation (Note 3) T c = 25 C, IGBT part 675 W V iso Isolation voltage RMS, sinusoidal, f = 6Hz, t = min. 4 V T jop Operating junction temperature 5 ~ +5 C T stg Storage temperature 5 ~ +5 C t psc Short circuit pulse width V CC = 2 V, V CE V CES, V GE = 5V, T j = 5 C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit T j = 25 C 36 I CES Collector cutoff current V CE = V CES, V GE = V T j = 25 C 5 ma T j = 5 C 8 V GE(th) Gate-emitter threshold voltage V CE = V, I C = 2mA, T j = 25 C 6. V I GES Gate leakage current V GE = V GES, V CE = V, T j = 25 C.5.5 µa C ies Input capacitance 26 nf V CE = V, V GE = V, f = khz C oes Output capacitance 8. nf T j = 25 C C res Reverse transfer capacitance.6 nf Q G Total gate charge V CC = 85V, I C = 2A, V GE = 5V 2. µc V CEsat Collector-emitter saturation voltage T j = 25 C.95 I C = 2 A (Note 4) T j = 25 C 2.25 V GE = 5 V T j = 5 C 2.3 V T j = 25 C.5 t d(on) Turn-on delay time T j = 25 C.5 µs T j = 5 C.5 t r Turn-on rise time E on(%) Turn-on switching energy (Note 6) E on Turn-on switching energy (Note 5) t d(off) t f Turn-off delay time Turn-off fall time E off(%) Turn-off switching energy (Note 6) E off Turn-off switching energy (Note 5) V CC = 85 V I C = 2 A V GE = ±5 V R G(on) =.3 Ω L s = nh Inductive load V CC = 85 V I C = 2 A V GE = ±5 V R G(off) = 3.3 Ω L s = nh Inductive load T j = 25 C.4 T j = 25 C.5 T j = 5 C.5 T j = 25 C T j = 25 C 35 T j = 5 C 4 T j = 25 C 3 T j = 25 C 55 T j = 5 C 6 T j = 25 C.2 T j = 25 C.3 T j = 5 C.32 T j = 25 C.2 T j = 25 C.5 T j = 5 C.7 T j = 25 C 2 T j = 25 C 28 T j = 5 C 3 T j = 25 C 26 T j = 25 C 36 T j = 5 C 4 µs mj mj µs µs mj mj 2

3 < HVIGBT MODULE > THERMAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit V EC Emitter-collector voltage (Note 2) T j = 25 C.6 I E = 2A (Note 4) T j = 25 C 2.2 V GE = V T j = 5 C 2.3 V Q C Total capacitive charge (Note 2,7) T j = 25 C 5. V CC = 85V, I E = 2 A T j = 25 C 8.5 R G(on) =.3ΩL s = nh T j = 5 C 9. µc R th(j-c)q Junction to Case, IGBT part, /2 module 8.5 K/kW Thermal resistance R th(j-c)d Junction to Case, FWDi part, /2 module 36. K/kW R th(c-s) Contact thermal resistance Case to heat sink, /2 module grease = W/m k, D (c-s) = m 6. K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Min Typ Max Unit M t Main terminals screw N m M s Mounting torque Mounting screw N m M t Auxiliary terminals screw. 3. N m m Mass.8 kg CTI Comparative tracking index 6 d a Clearance 9.5 mm d s Creepage distance 5. mm L P CE Parasitic stray inductance /2 module 3. nh R CC +EE Internal lead resistance T c = 25 C, /2 module.28 mω Note. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Definition of all items is according to IEC 6747, unless otherwise specified. 6. Eon(%) / Eoff(%) / Erec(%) are the integral of.vce x.ic x dt. 7. Capacitive charge during anti-paralleled FWDi s turn-off operation. 3

4 Emitter Current [A] < HVIGBT MODULE > PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 25 T j = 25 C 25 V CE = V 2 V GE = 7V V GE = 5V V GE = V 2 5 V GE = 3V 5 T j = 25ºC / 5ºC V GE = 9V T j = 25ºC Collector - Emitter Voltage [V] Gate - Emitter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD 25 V GE = 5V T j = 25ºC T j = 25ºC 5 T j = 5ºC 5 T j = 25ºC T j = 5ºC T j = 25ºC Collector-Emitter Saturation Voltage [V] Emitter-Collector Voltage [V] 4

5 Switching Energies [J] Switching Energies [J] Capacitance [nf] Gate-Emitter Voltage [V] < HVIGBT MODULE > PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 2 C ies 5 VCE = 85V, IC = 2A T j = 25ºC 5 C oes -5 VGE = V, T j = 25ºC f = khz C res -.. Collector-Emitter Voltage [V] Gate Charge [µc] HALF-BRIDGE SWITCHING ENERGY.2 HALF-BRIDGE SWITCHING ENERGY.2 VCC = 85V, VGE = ±5V VCC = 85V, VGE = ±5V. RG(on) =.3Ω, R G(off) = 3.3Ω T j = 25ºC, Inductive load. RG(on) =.3Ω, R G(off) = 3.3Ω T j = 5ºC, Inductive load E off E off E on.4 E on

6 Switching Times [µs] Switching Times [µs] Switching Energies [J] Switching Energies [J] < HVIGBT MODULE > PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY HALF-BRIDGE SWITCHING ENERGY 2. VCC = 85V, IC = 2A 2. VCC = 85V, IC = 2A VGE =±5V, T j = 25ºC Inductive load VGE = ±5V, T j = 5ºC Inductive load.5.5 E on E on.. E off E off Gate Resistance [Ω] Gate Resistance [Ω] HALF-BRIDGE SWITCHING TIME HALF-BRIDGE SWITCHING TIME VCC = 85V, VGE = ±5V R G(on) =.3Ω, R G(off) = 3.3Ω T j = 25ºC, Inductive load VCC = 85V, VGE = ±5V R G(on) =.3Ω, R G(off) = 3.3Ω T j = 5ºC, Inductive load t d(off) t d(off) t d(on) t d(on) t f t f.. t r t r.. 6

7 Normalized Transient Thermal impedance < HVIGBT MODULE > PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3 25 VCC 2V, VGE =±5V T j = 5ºC, RG(off) 3.3Ω Collector-Emitter Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS R th(j-c)q = 8.5K/kW R th(j-c)d = 36.K/kW Z th( jc ) n t ( t ) R exp i i i Ri [K/kW] ti [sec] Time [s] 7

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