Target Specification (Tentative)

Transcription

1 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Fuji Electric Systems Co.,Ltd. Module Development Division High Power Module Gr. Target Specification (Tentative) Device name: IGBT Module Type name: 1MBI8UG33 Spec. no. : MTF2246 DRAWN DATE Oct.22 ' NAME Y.arita APPROVED CHECKED CHECKED Oct.22 ' T.koga H.kakiki MTF2246 1

2 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail 1MBI8UG33 1. Outline drawing ( Unit : mm ) 2. Equivalent circuit main collector sense collector gate sense emitter main emitter MTF2246 2

3 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail 3.Absolute Maximum Ratings ( at Tc= 2 C unless otherwise specified ) Items Symbols Conditions Maximum Ratings Units CollectorEmitter voltage GateEmitter voltage Collector current Ic Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and base (*1) Viso AC : 1min. Mounting Screw Torque (*2) Main Terminals Sense Terminals (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.2~.7 Nm (M6) Main Terminals 8~1 Nm (M8) Sense Terminals 1.7~2.1 Nm (M4) 4. Electrical characteristics ( at Tj= 2 C unless otherwise specified) Zero gate voltage Collector current GateEmitter leakage current GateEmitter threshold voltage CollectorEmitter saturation voltage Turnon time VCES VGES Ic Icp Continuous 1ms Tc=2 C Tc=8 C Tc=2 C Tc=8 C 33 V ±2 V Characteristics min. typ. max. Units ICES VGE = V VCE=33V 1. ma IGES VCE = V VGE=±2V 32 na VGE(th) VCE = 2V Ic=8mA V VCE(sat) Tj= 2 C (terminal) VGE=1V Tj=12 C 3.1 VCE(sat) Ic=8A Tj= 2 C V (chip) Tj=12 C 3. nf ton Vcc=18V, Ic=8A 2.6 tr VGE=±1V 1. toff Rg=2.4 Ω, Ls=22nH 2.3 μs tf Tj=12 o C.4 Items Symbols Conditions ~ +12 Input capacitance Cies VCE=1V,VGE=V,f=1MHz 16 Turnoff time A W C 6. kvac VF Tj= 2 C (terminal) VGE=V Tj=12 C Forward on voltage VF IF=8A Tj= 2 C (chip) Tj=12 C Reverse recovery time trr IF=8A, Tj=12 o C.8 N m V μs Lead resistance, terminalchip R lead.1 mω MTF2246 3

4 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. max. IGBT Thermal resistance(1device) Rth(jc) FWD Contact Thermal resistance IGBT. Rth(cf) (1device) (*3) FWD 18. (*3) This is the value which is defined mounting on the additional cooling fin with thermal compound (1W/m ). Units C/kW 6. Indication on module Display on the module label Logo of production Type name: 1MBI8UG33 I C, V CES rating : 8A 33V Lot No ( digits) Place of manufacturing (code) Bar code with serial No. This material and the information herein is the property o Fuji Electric Co.,Ltd. They shall be neither reproduced, c lent, or disclosed in any way whatsoever for the use of a third party nor used for the manufacturing purposes with 7.Applicable category This specification is applied to Power Integrated Module named 1MBI8UG33. 8.Storage and transportation notes The module should be stored at a standard temperature of to 3 C and humidity of 4 to 7%. Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting.. Definitions of switching time V ~ % V L VGE tr r VCE Ir r Ic Vcc % ~ % RG VGE VCE Ic V A Ic 1% to n tr ( i ) rt 1% VCE 1% ~ to f f tf 1. Packing and labeling Display on the packing box Logo of production Type name Lot No Products quantity in a packing box MTF2246 4

5 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail 11. Reliability test results Reliability Test Items Test items Test methods and conditions Reference norms EIAJ ED471 (Aug.21 edition) Number of sample Test categories Acceptance number Me 1 Terminal Strength Pull force : 4N (Pull test) Test time : 1±1 sec. Test Method 41 MethodⅠ ( : 1 ) 2 Mounting Strength Screw torque : 1.8 ~ 2.1 N m (M4) 4.2 ~.7 N m (M6) Test Method 42 methodⅡ ( : 1 ) 8.~ 1. N m (M8) Test time : 1±1 sec. 3 Vibration Range of frequency : 1 ~ Hz Sweeping time : 1 min. Acceleration : 1m/s 2 Test Method 43 Reference 1 Condition code B ( : 1 ) Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) 4 Shock Maximum accelerati : m/s 2 Pulse width : 6.msec. Test Method 44 Condition code A ( : 1 ) Direction : Each X,Y,Z axis Test time : 3 times/direction 1 High Temperature Storage temp. : 12± Test Method 21 ( : 1 ) Storage Test duration : hr. Environment Tests 2 Low Temperature Storage temp. : 4± Storage Test duration : hr. 3 Temperature Storage temp. : 8±2 Humidity Relative humidity : 8±% Storage Test duration : hr. 4 Unsaturated Test temp. : 12±2 Pressurized Vapor Test humidity : 8±% Test duration : 6hr. Temperature Cycle Test temp. : Low temp. 4± High temp. 12 ± RT ~ 3 Test Method 22 Test Method 13 Test code C Test Method 13 Test code E Test Method 1 ( : 1 ) ( : 1 ) ( : 1 ) ( : 1 ) Dwell time : High ~ RT ~ Low ~ RT 1hr..hr. 1hr..hr. Number of cycles : 1 cycles 6 Thermal Shock + Test temp. : High temp. 1 Test Method 37 method Ⅰ Condition code A ( : 1 ) + Low temp. Used liquid : Water with ice and boiling water Dipping time : min. par each temp. Transfer time : 1 sec. Number of cycles : 1 cycles MTF2246 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

6 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Reliability Test Items Test items Test methods and conditions Reference norms EIAJ ED471 (Aug.21 edition) Number of sample Test categories Acceptance number Endurance Tests 1 High temperature Reverse Bias Test temp. : Ta = 12 o C± o C (Tj 1 o C) Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to CE VGE = V Test duration : hr. 2 High temperature Bias (for gate) Test temp. : Ta = 12 o C± o C (Tj 1 o C) Bias Voltage : VC = VGE = +2V or 2V Bias Method : Applied DC voltage to GE VCE = V Test duration : hr. 3 Temperature Humidity Bias Test temp. : 8±2 o C Relative humidity : 8±% Bias Voltage : VC =.8 VCES Bias Method : Applied DC voltage to CE VGE = V Test duration : hr. 4 Intermitted ON time : 2 sec. Operating Life OFF time : 18 sec. (Power cycle) Test temp. : Tj=1± o C ( for IGBT ) Tj 1 o C, Ta=2± o C Number of cycles : 1 cycles Electrical Leakage current characteristic Gate threshold voltage Saturation voltage Forward voltage Thermal IGBT resistance FWD Isolation voltage Visual Visual inspection inspection Peeling Plating and the others Note : Item Characteristic Symbol ICES ±IGES VGE(th) VCE(sat) VF VGE or VCE VF Viso Failure Criteria Failure criteria Lower limit Upper limit USL 2 USL 2 LSL.8 USL 1.2 USL 1.2 USL 1.2 USL 1.2 Broken insulation The visual sample USL 1.2 Test Method 11 ( : 1 ) Test Method 11 ( : 1 ) Test Method 12 Condition code C Unit ma A ma V V mv mv ( : 1 ) Test Method 16 ( : 1 ) Note LSL : Lower specified limit. USL : Upper specified limit. Each parameter measurement readouts shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MTF2246 6

7 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Collector current vs. CollectorEmitter voltage (typ.) Tj= 2 o C / chip 1V 12V 16 VGE=2V 14 Collector current vs. CollectorEmitter voltage (typ.) Tj= 12 o C / chip 16 1V VGE=2V 14 12V Collector current : Ic [A] V 8V Collector current : Ic [A] V 8V CollectorEmitter voltage : VCE [V] CollectorEmitter voltage : VCE [V] Collector current vs. CollectorEmitter voltage (typ.) VGE=1V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj=2 o C / chip Collector current : Ic [A] Tj=2 o C Tj=12 o C CollectorEmitter voltage : VCE [V] Collector Emitter voltage : VCE [ V ] Gate Emitter voltage : VGE [ V ] Ic=16A Ic=8A Ic= 4A Capacitance vs. CollectorEmitter voltage (typ.) VGE=V, f= 1MHz, Tj= 2 o C Dynamic Gate charge (typ.) Vcc=18V,Ic=8A,Tj= 2 o C. 2 VCE Capacitance : Cies, Coes, Cres [ nf ] Cies Cres Coes CollectorEmitter voltage : VCE [V] 1 VGE Gate charge : Qg [ μc ] GateEmitter voltage : VGE [V] CollectorEmitter voltage : VCE [V] MTF2246 7

8 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Switching time vs. Collector current (typ.) Vcc=18V, VGE=±1V, Tj= 2 o C Switching time vs. Collector current (typ.) Vcc=18V, VGE=±1V, Tj=12 o C Switching time : ton, tr, toff, tf [ nsec ] 1 toff ton tf tr Switching time : ton, tr, toff, tf [ nsec ] toff ton tf tr Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=18V, Ic=8A, VGE=±1V, Tj= 12 o C Vcc=18V, VGE=±1V Switching time : ton, tr, toff, tf [ nsec ] ton toff tr tf Gate resistance : Rg [ Ω ] Switching loss : Eon, Eoff [ mj/pulse ] Eon,Tj=2 Eon,Tj=12 Eoff,Tj=2 Eoff,Tj= Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=18V, Ic=8A, VGE=±1V ±VGE=1V, Tj=12 o C / chip 3 2 Switching loss : Eon, Eoff [ mj/pulse ] 2 Eon Eoff Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] Collector Emitter voltage : VCE [ V ] MTF2246 8

9 Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали e:mail Беларусь г.минск тел./факс 8(17) e:mail Forward current vs. Forward on voltage (typ.) chip Switching loss vs. Collector current (typ.) Vcc=18V, VGE=±1V Forward current : IF [ A ] Tj=2 o C Tj=12 o C Switching loss : Err [ mj/pulse ] Tj=12 o C Tj=2 o C Forward on voltage : VF [ V ] Forward current : IF [ A ] Switching loss vs. Gate resistance (typ.) Reverse recovery characteristics (typ.) Vcc=18V, IF=8A, VGE=±1V, Tj=12 o C Vcc=18V, VGE=±1V Switching loss : Err [ mj/pulse ] Gate resistance : Rg [ Ω ] Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1 Tj=2 o C Irr Tj=12 o C Tj=12 o C trr Tj=2 o C Forward current : IF [ A ] Transient thermal resistance (max.) 1. Thermal resistanse : Rth(jc) [ C/W ] FWD IGBT Pulse width : Pw [ sec ] MTF2246