AUTOMOTIVE GRADE. Standard Pack

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1 AUTOMOTIVE GRADE AUIRGPS47D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA 1% of the parts tested for ILM Positive V CE (on) Temperature Coefficient Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant Automotive Qualified * G C E n-channel C V CES = 6V I C = 16A, T C = 1 C tsc 6µs, T J(MAX) = 175 C V CE(on) typ. = 1.7V Benefits High Efficiency in a Wide Range of Applications Suitable for Applications in the Low to Mid-Range Frequencies Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI Base Part Number Package Type Standard Pack Form Quantity Super-247A G C E Gate Collector Emitter Orderable Part Number AUIRGPS47D Super-247 Tube 25 AUIRGPS47D Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 24 I T C = 1 C Continuous Collector Current 16 I NOMINAL Nominal Current 12 I CM Pulse Collector Current, V GE = 15V 36 A I LM Clamped Inductive Load Current, V GE = 2V 48 I F NOMINAL Diode Nominal Current 12 I FM Diode Maximum Forward Current 48 V GE Continuous Gate-to-Emitter Voltage ±2 Transient Gate-to-Emitter Voltage ±3 V P T C = 25 C Maximum Power Dissipation 75 P T C = 1 C Maximum Power Dissipation 375 W T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) G C E Thermal Resistance Parameter Typ. Max. Units R JC (IGBT) Thermal Resistance Junction-to-Case (each IGBT).2 R JC (Diode) Thermal Resistance Junction-to-Case (each Diode).45 C/W R CS Thermal Resistance, Case-to-Sink (flat, greased surface).24 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 * Qualification standards can be found at

2 AUIRGPS47D Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.74 V/ C V GE = V, I C = 5mA (25 C-175 C) I C = 12A, V GE = 15V, T J = 25 C V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 12A, V GE = 15V, T J = 15 C 2.1 I C = 12A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 5.6mA V GE(th) / TJ Threshold Voltage temp. coefficient -16 mv/ C V CE = V GE, I C = 5.6mA (25 C-175 C) gfe Forward Transconductance 87 S V CE = 5V, I C = 12A I CES Collector-to-Emitter Leakage Current 1. 2 µa V GE = V, V CE = 6V 2. ma V GE = V, V CE = 6V,T J = 175 C V FM Diode Forward Voltage Drop I F = 12A V 1.9 I F = 12A, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 12A Q ge Gate-to-Emitter Charge (turn-on) nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) 1 15 V CC = 4V E on Turn-On Switching Loss E off Turn-Off Switching Loss mj E total Total Switching Loss I C = 12A, V CC = 4V, V GE = 15V t d(on) Turn-On delay time 4 6 R G = 4.7, L = 87µH, T J = 25 C t r Rise time ns Energy losses include tail & diode t d(off) Turn-Off delay time reverse recovery t f Fall time E on Turn-On Switching Loss 6.4 E off Turn-Off Switching Loss 4.7 mj E total Total Switching Loss 11.1 I C = 12A, V CC = 4V, V GE = 15V t d(on) Turn-On delay time 4 R G = 4.7, L = 87µH, T J = 175 C t r Rise time 11 ns Energy losses include tail & diode t d(off) Turn-Off delay time 16 reverse recovery t f Fall time 125 C ies Input Capacitance 76 V GE = V C oes Output Capacitance 51 pf V CC = 3V C res Reverse Transfer Capacitance 23 f = 1.Mhz T J = 175 C, I C = 48A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp 6V Rg = 4.7, V GE = +2V to V SCSOA Short Circuit Safe Operating Area V CC = 4V, Vp 6V 6 µs Rg = 5., V GE = +15V to V Erec Reverse Recovery Energy of the Diode 174 µj T J = 175 C t rr Diode Reverse Recovery Time 21 ns V CC = 4V, I F = 12A I rr Peak Reverse Recovery Current 45 A V GE = 15V, Rg = 4.7, L = 87µH Notes: V CC = 8% (V CES ), V GE = 2V, L = 3.5µH, R G = 47 tested in production ILM 4A. Pulse width limited by max. junction temperature. Refer to AN-186 for guidelines for measuring V (BR)CES safely. R is measured at T J approximately 9 C. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is12a. Note that current limitations arising from heating of the device leads may occur

3 I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) AUIRGPS47D T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 1 1µsec 1µsec 1 1 1msec DC Tc = 25 C Tj = 175 C Single Pulse Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V Fig. 4 - Reverse Bias SOA T J = 175 C; V GE = 2V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 2µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 2µs

4 I CE (A) I CE (A) I F (A) AUIRGPS47D V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V C 25 C 175 C V F (V) 1 Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 2µs 1 Fig. 8 - Typ. Diode Forward Characteristics tp = 2µs I CE = 6A I CE = 12A I CE = 195A 6 I CE = 6A I CE = 12A I CE = 195A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C I CE = 6A I CE = 12A I CE = 195A TJ = -4 C T J = 25 C T J = 175 C V GE (V) V GE (V) Fig Typical V CE vs. V GE T J = 175 C Fig Typ. Transfer Characteristics VCE = 5V; tp = 2µs

5 I RR (A) I RR (A) Energy (mj) Swiching Time (ns) Energy (mj) Swiching Time (ns) AUIRGPS47D td OFF 1 E ON 1 t F t R 5 E OFF td ON I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 175 C; L =.87mH; V CE = 4V, R G = 4.7 ; V GE = 15V 16 Fig Typ. Switching Loss vs. I C T J = 175 C; L =.87mH; V CE = 4V, R G = 4.7 ; V GE = 15V E ON 1 td OFF E OFF 1 t F t R td ON Rg ( ) R G ( ) Fig Typ. Energy Loss vs. R G T J = 175 C; L =.87mH; V CE = 4V, I CE = 12A; V GE = 15V 45 Fig Typ. Switching Time vs. R G T J = 175 C; L =.87mH; V CE = 4V, I CE = 12A; V GE = 15V 45 4 R G = R G = R G = R G = I F (A) R G ( Fig Typ. Diode I RR vs. I F T J = 175 C Fig Typ. Diode I RR vs. R G T J = 175 C

6 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (nc) AUIRGPS47D A A A di F /dt (A/µs) di F /dt (A/µs) Fig Typ. Diode I RR vs. dif/dt V CC = 4V; V GE = 15V; I F = 12A; T J = 175 C Fig. 2 - Typ. Diode Q RR vs. dif/dt V CC = 4V; V GE = 15V; T J = 175 C R G = 4.7 R G = 1 R G = 2 R G = T sc I sc Current (A) I F (A) V GE (V) 1 Fig Typ. Diode E RR vs. I F T J = 175 C 16 Fig V GE vs. Short Circuit Time V CC = 4V; T C = 25 C V CES = 4V 1 Cies 12 VCES = 3V 1 8 Coes 1 4 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 12A

7 AUIRGPS47D 1.1 D =.5 Thermal Response ( Z thjc ) R 1 R 2 R 3 R 1 R 2 R 3 J J Ci= i Ri SINGLE PULSE Ci= i Ri ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) R 4 R Ri ( C/W) I (sec) 4 4 C C Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ) D = J J Ci= i Ri Ci= i Ri R 1 R 2 R 3 R 1 R 2 R 3 Notes: SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) R 4 R 4 C C 4 4 Ri ( C/W) I (sec) Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

8 AUIRGPS47D L L 1K DUT VCC 8 V + - DUT VCC Rg Gate Charge Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) RBSOA Circuit Fig.C.T.2 - RBSOA Circuit diode clamp / DUT 4X L DC DUT VCC -5V Rg DUT / DRIVER VCC R SH Switching Loss Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM C force 1K Rg DUT VCC G force D1 DUT 22K.75µF C sense E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

9 AUIRGPS47D 6 5 tf tr TEST CURRENT % I CE 1% V CE 1% I CE I CE (A) %I CE 9% I CE 1% V CE I CE (A) -1 Eoff Loss time(µs) -1 Eon Loss time (µs) Fig. WF1 - Typ. Turn-off Loss T J = 175 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss T J = 175 C using Fig. CT Q RR V CE t RR 3 I CE 12 I F (A) 4 2 Vce (V) Ice (A) -2-4 Peak I RR time (µs) Time (us) Fig. WF3 - Typ. Diode Recovery T J = 175 C using Fig. CT.4 Fig. WF4 - Typ. S.C. T J = 25 C using Fig. CT

10 Case Outline and Dimensions-Super-247 (Dimensions are shown in millimeters (inches)) AUIRGPS47D Super-247(TO-274AA) Part Marking Information Part Number IR Logo AUPS47D YWWA XX XX Date Code Y = Year WW = Work Week A = Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at

11 AUIRGPS47D Qualification Information Qualification Level Automotive (per AEC-Q11) This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Super-247 N/A Human Body Model ESD Charged Device Model Class H3B(+/ 8) AEC-Q11-1 Class C3 (+/ 2) AEC-Q11-5 RoHS Compliant Yes Highest passing voltage. Published by Infineon Technologies AG München, Germany Infineon Technologies AG 215 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

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