Diode Maximum Forward Current d 480 V GE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 P D

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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6μs SCSOA Square RBSOA 1% of the parts tested for I LM Positive V CE (on) Temperature Coefficient Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant Automotive Qualified * Benefits High Efficiency in a Wide Range of Applications Suitable for Applications in the Low to Mid-Rrange Frequencies Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation Low EMI Absolute Maximum Ratings AUTOMOTIVE GRADE G C E n-channel AUIRGPS467D1 C V CES = 6V I C = 16A, T C = 1 C t SC 6μs, T J(max) = 175 C Super-247 AUIRGPS467D1 V CE(on) typ. = 1.7V G CE G C E Gate Collector Emitter Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 24g I T C = 1 C Continuous Collector Current 16 I NOMINAL Nominal Current 12 I CM Pulse Collector Current, V GE = 15V 36 I LM Clamped Inductive Load Current, V GE = 2V c 48 A I F NOMINAL Diode Nominal Current d 12g I FM Diode Maximum Forward Current d 48 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P T C = 25 C Maximum Power Dissipation 75 W P T C = 1 C Maximum Power Dissipation 375 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Thermal Resistance PD C Parameter Min. Typ. Max. Units R JC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.2 R JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) f.44 C/W R CS Thermal Resistance, Case-to-Sink (flat, greased surface).24 R JA Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 *Qualification standards can be found at /27/212

2 AUIRGPS467D1 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5μA e V (BR )CE S/ T J T emperature Coeff. of B reakdown Voltage.27 V/ C V GE = V, I C = 15mA (25 C-175 C) I C = 12A, V GE = 15V, T J = 25 C V CE(on) Collector-to-Emitter Saturation Voltage 2.15 V I C = 12A, V GE = 15V, T J = 15 C 2.2 I C = 12A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 5.6mA V GE (th)/ TJ Threshold Voltage temp. coefficient -17 mv/ C V CE = V GE, I C = 2mA (25 C C) gfe Forward Transconductance 85 S V CE = 5V, I C = 12A I CES Collector-to-Emitter Leakage Current μa V GE = V, V CE = 6V 9.4 ma V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop I F = 12A V 2. I F = 12A, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 12A Q ge Gate-to-Emitter Charge (turn-on) nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) V CC = 4V E on Turn-On Switching Loss I C = 12A, V CC = 4V, V GE = 15V E off Turn-Off Switching Loss mj R G = 4.7, L = 87μH, T J = 25 C E total Total Switching Loss E nergy los s es include tail & diode revers e recovery t d(on) Turn-On delay time I C = 12A, V CC = 4V, V GE = 15V t r Rise time ns R G = 4.7, L = 87μH, T J = 25 C t d(off) Turn-Off delay time t f Fall time E on Turn-On Switching Loss 1 I C = 12A, V CC = 4V, V GE=15V E off Turn-Off Switching Loss 3.8 mj R G = 4.7, L = 87μH, T J = 175 C e E total Total Switching Loss 13.8 E nergy los s es include tail & diode revers e recovery t d(on) Turn-On delay time 63 I C = 12A, V CC = 4V, V GE = 15V t r Rise time 64 ns R G = 4.7, L = 2μH t d(off) Turn-Off delay time 23 T J = 175 C t f Fall time 51 C ies Input Capacitance 778 pf V GE = V C oes Output Capacitance 55 V CC = 3V C res Reverse Transfer Capacitance 245 f = 1.Mhz T J = 175 C, I C = 48A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V Rg = 4.7, V GE = +2V to V SCSOA Short Circuit Safe Operating Area 6 μs V CC = 4V, Vp =6V Rg = 1., V GE = +15V to V Erec Reverse Recovery Energy of the Diode 244 μj T J = 175 C t rr Diode Reverse Recovery Time 36 ns V CC = 4V, I F = 12A I rr Peak Reverse Recovery Current 53 A V GE = 15V, Rg = 4.7, L =87μH Notes: V CC = 8% (V CES ), V GE = 2V, L =.87μH, R G = 5 tested in production I LM 4A. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. R is measured at T J of approximately 9 C. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is12a. Note that current limitations arising from heating of the device leads may occur. 2

3 AUIRGPS467D1 Qualification Information Automotive (per AEC-Q11) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Super-247 N/A Machine Model Class M4 (+/- 4V) AEC-Q11-2 ESD Human Body Model Class H3B (+/- 8V) AEC-Q11-1 Charged Device Model Class C5 (+/- 1V) AEC-Q11-5 RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: Highest passing voltage. 3

4 I CE (A) I CE (A) I C (A) I C A) I C (A) P tot (W) AUIRGPS467D Fig. 1 - Maximum DC Collector Current vs. Case Temperature T C ( C) T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 1 1μsec 1 1μsec 1 1msec 1 Tc = 25 C Tj = 175 C Single Pulse DC Fig. 3 - Forward SOA T C = 25 C, T J 175 C; V GE =15V Fig. 4 - Reverse Bias SOA T J = 175 C; V GE =2V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 3μs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 3μs 4

5 I CE (A) I F (A) AUIRGPS467D V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V T J = -4 C T J = 25 C T J =175 C Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 3μs V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 3μs I CE = 6A I CE = 12A I CE = 195A 6 4 I CE = 6A I CE = 12A I CE = 195A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C I CE = 6A I CE = 12A I CE = 195A I C, Collector-to-Emitter Current (A) T J = -4 C T J = 25 C T J = 175 C V GE (V) Fig Typical V CE vs. V GE T J = 175 C V GE, Gate-to-Emitter Voltage (V) Fig Typ. Transfer Characteristics V CE = 5V; tp = 1μs 5

6 I RR (A) I RR (A) Energy (μj) Swiching Time (ns) Energy (μj) Swiching Time (ns) AUIRGPS467D E ON td OFF td ON 1 E OFF t F 5 t R I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 175 C; L =.87mH; V CE = 4V, R G = 5. ; V GE = 15V 35 3 Fig Typ. Switching Time vs. I C T J = 175 C; L =.87mH; V CE = 4V, R G = 5. ; V GE = 15V 1 td OFF 25 E ON 1 2 td ON 15 E OFF t F t R R G ( ) Fig Typ. Energy Loss vs. R G T J = 175 C; L =.87mH; V CE = 4V, I CE = 12A; V GE = 15V R G ( ) Fig Typ. Switching Time vs. R G T J = 175 C; L =.87mH; V CE = 4V, I CE = 12A; V GE = 15V R G = R G = R G = 2 R G = I F (A) R G ( Fig Typ. Diode I RR vs. I F T J = 175 C Fig Typ. Diode I RR vs. R G T J = 175 C 6

7 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (μj) Time (μs) I RR (A) Q RR (nc) AUIRGPS467D di F /dt (A/μs) Fig Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 12A; T J = 175 C A 12A 4.7 6A di F /dt (A/μs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 15V; T J = 175 C R G = 2 R G = 1 R G = T sc I sc R G = Current (A) I F (A) Fig Typ. Diode E RR vs. I F T J = 175 C V GE (V) Fig V GE vs. Short Circuit Time V CC = 4V; T C = 25 C V CES = 4V 1 Cies 12 V CES = 3V 1 1 Coes Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 12A 7

8 AUIRGPS467D1 1.1 D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 J J Ci= i Ri Ci i Ri Ri ( C/W) i (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) C Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 J J Ci= i Ri Ci i Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) R 4 R C Ri ( C/W) i (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8

9 AUIRGPS467D1 L L 1K DUT VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT 4X L DC DUT VCC -5V Rg DUT / DRIVER VCC R SH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R = VCC ICM 1K Rg DUT VCC G force D1 DUT 22K.75μF C sense E sense Fig.C.T.5 - Resistive Load Circuit E force Fig.C.T.6 - BVCES Filter Circuit 9

10 AUIRGPS467D V CE I CE VCE (V) ICE (A) VCE (V) ICE (A) V CE I CE -1-5E-8 E+ 5E-8 1E-6 2E E-7 E+ 5E-7 1E-6 2E-6-3 time(µs) Fig. WF1 - Typ. Turn-off Loss T J = 175 C using Fig. CT.4 time (µs) Fig. WF2 - Typ. Turn-on Loss T J = 175 C using Fig. CT I CE V CE IF (A) 4 Vce (V) Ice (A) E-7.E+ 5.E-7 1.E-6 time (ns) Fig. WF3 - Typ. Diode Recovery T J = 175 C using Fig. CT E-6.E+ 5.E-6 1.E-5 1.5E-5 time (µs) Fig. WF4 - Typ. S.C. T J = 25 C using Fig. CT

11 AUIRGPS467D1 Case Outline and Dimensions Super-247 Super-247 (TO-274AA) Part Marking Information Part Number IR Logo AUPS467D1 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at

12 AUIRGPS467D1 Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRGPS467D1 Super-247 Tube 25 AUIRGPS467D1 12

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