Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj

Transcription

1 STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj Features TAB D 2 PAK TAB 2 1 DPAK 3 AEC-Q101 qualified SCIS energy of 320 T J = 25 C Parts are 100% tested in SCIS ESD gate-emitter protection Gate-collector high voltage clamping C (2 or TAB) Logic level gate drive Very low saturation voltage High pulsed current capability Gate and gate-emitter resistor G (1) R G R GE Applications Automotive ignition coil driver circuit Product status STGB25N40LZAG STGD25N40LZAG E (3) IGBTG1C2TABE3ESD Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. Product summary Order code Marking Package Packing Order code Marking Package Packing STGB25N40LZAG GB25N40LZ D²PAK Tape and reel STGD25N40LZAG GD25N40LZ DPAK Tape and reel DS Rev 3 - February 2018 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0 V) V CES(clamped) V V ECS Emitter-collector voltage (V GE = 0 V) 20 V I Continuous collector current at T C = 25 C, V GE = 4 V 25 A C Continuous collector current at T C = 100 C, V GE = 4 V 25 A I CP (1) Pulsed collector current 50 A V GE Gate-emitter voltage V GE (clamped) V P TOT Total dissipation at T C = 25 C 150 W E SCIS_25 (2) Self clamping inductive switching energy 320 mj E SCIS_150 (3) Self clamping inductive switching T J = 150 C 180 mj ESD Human body model, R = 1.5 kω, C = 100 pf 4 kv Charged device model 2 kv T STG T J Storage temperature range Operating junction temperature range - 55 to 175 C 1. Pulse width limited by maximum junction temperature. 2. Starting T j = 25 C, L = 3 mh, R g = 1 kω, V cc = 50 V during inductor charging and V cc = 0 V during the time in clamp. Parts are 100% electrically tested in production. 3. Starting T j = 150 C, L = 3 mh, R g = 1 kω, V cc = 50 V during inductor charging and V cc = 0 V during the time in clamp. Table 2. Thermal data Symbol Parameter Value Unit D²PAK DPAK R thj-case Thermal resistance junction-case 1 C/W R thj-amb Thermal resistance junction-ambient C/W DS Rev 3 page 2/20

3 Electrical characteristics 2 Electrical characteristics T C = 25 C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V CES(clamped) V (BR)ECS Collector-emitter clamped voltage Emitter-collector break-down voltage I C = 2 ma, V GE = 0 V 400 V I C = 2 ma, V GE = 0 V, T j = - 40 C to 175 C V I C = 75 ma, V GE = 0 V 20 V V GE(clamped) Gate-emitter clamped voltage I G = ±2 ma, T j = - 40 C to 175 C V V CE(sat) V GE(th) I CES I GES Collector-emitter saturation voltage Gate-threshold voltage Collector cut-off current Gate-emitter leakage current V GE = 4 V, I C = 6 A V V GE = 4.5 V, I C = 10 A, T J = 175 C V V GE = V CE, I C = 1 ma V V GE = V CE, I C = 1 ma, T J = 175 C 1.05 V V CE = 15 V, V GE = 0 V, T J = 175 C 20 µa V CE = 200 V, V GE = 0 V, T J = 175 C 100 µa V GE = ±10 V, V CE = 0 V 625 µa V GE = ±10 V, V CE = 0 V, T J = -40 C to 175 C µa R GE Gate emitter resistance kω R G Gate resistance 120 Ω Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance C oes Output capacitance V CE = 25 V, f = 1 MHz, V GE = 0 V pf C res Reverse transfer capacitance Q g Total gate charge V CE = 13 V, I C = 10 A, V GE = 0 to 5 V nc Table 5. Resistive load switching characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V CC = 14 V, V GE = 5 V, R L = 1 Ω, R G = 1 kω μs t r Current rise time (see Figure 17. Test circuit for resistive load switching) μs t d(on) Turn-on delay time V CC = 14 V, V GE = 5 V, R L = 1 Ω, R G = 1 kω, T J = 150 C μs t r Current rise time (see Figure 17. Test circuit for resistive load μs switching) DS Rev 3 page 3/20

4 Electrical characteristics Table 6. Inductive load switching characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit t d(off) Turn-off delay time V CC = 300 V, L = 1 mh, I C = 10 A, V GE = 5 V, μs t f Current fall time R G = 1 kω μs dv/dt Turn-off voltage slope (see Figure 16. Test circuit for inductive load switching) V/μs t d(off) Turn-off delay time V CC = 300 V, L = 1 mh, I C = 10 A, V GE = 5 V, μs t f Current fall time R G = 1 kω, T J = 150 C μs dv/dt Turn-off voltage slope (see Figure 16. Test circuit for inductive load switching) V/μs DS Rev 3 page 4/20

5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. V CE(sat) vs. junction temperature (I C = 6 A) Figure 2. V CE(sat) vs. junction temperature (I C = 10 A) V CE(SAT) (V) IGBT VCET_6 V CE(SAT) (V) IGBT VCET_ V GE = 4.0 V V GE = 5.0 V 1.4 V GE = 4.0 V V GE = 4.5 V V GE = 3.7 V V GE = 8.0 V V GE = 4.5 V V GE = 3.7 V 1.3 V GE = 8.0 V 1.2 V GE = 5.0 V T J ( C) T J ( C) Figure 3. Self clamped inductive switching current Figure 4. Output characteristics (T J = 25 C) I SCIS (A) 40 IGBT CLI V CC = 24 V, R G = 1 kω, V GE = 5 V I C (A) 40 V GE = 5.0 V V GE = 8.0 V IGBT OC25 V GE = 4.5 V V GE = 4.0 V T J = V GE = 3.5 V 10 T J = V GE = 3.0 V L(mH) V CE (V) Figure 5. Output characteristics (T J = -40 C) Figure 6. Output characteristics (T J = 175 C) I C (A) V GE = 8.0 V IGBT OC_40 V GE = 4.5 V I C (A) V GE = 5.0 V IGBT OC V GE = 5.0 V V GE = 4.0 V 40 V GE = 4.5 V V GE = 8.0 V V GE = 4.0 V 20 V GE = 3.5 V 20 V GE = 3.5 V 10 V GE = 3.0 V 10 V GE = 3.0 V V CE (V) V CE (V) DS Rev 3 page 5/20

6 Electrical characteristics (curves) Figure 7. Transfer characteristics Figure 8. Collector current vs. case temperature I C (A) IGBT TCH I C (A) IGBT CCT 40 V C E = 8 V 30 T j = 175 C 20 V GE = 4.0 V T j = 25 C 10 T j = -40 C V GE (V) T C ( C) Figure 9. Leakage current vs. temperature Figure 10. Normalized V CES(clamped) vs. temperature I CES (μa) 10 1 V CE = 350 V IGBT LCJT V CES(clamped) (norm.) 1.1 I C = 2 ma IGBT NVBR V CE = 200 V T J ( C) TJ ( C) Figure 11. Normalized V GE(th) vs. temperature Figure 12. Gate charge vs. gate-emitter voltage V GE(th) (Norm.) 1.1 V CE = V GE I C = 1 ma IGBT NVGE V GE (V) 8 6 I C = 10 A I G = 1 ma V CE = 13 V IGBT GCGE V CE = 280 V T J ( C) Q g (nc) DS Rev 3 page 6/20

7 Electrical characteristics (curves) Figure 13. Capacitance variations Figure 14. Thermal impedance for DPAK C (pf) IGBT CVR 10 3 C ies f = 1 MHz C oes C res V CE (V) Figure 15. Thermal impedance for D²PAK DS Rev 3 page 7/20

8 Test circuits 3 Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Test circuit for resistive load switching C A A L G L=100 µh E B B G C 3.3 µf D.U.T 1000 µf V CC + R G E - AM015 04v 1 AM01504v2 Figure 18. Gate charge test circuit Figure 19. Switching waveform k k VG 90% 10% 90% k VCE Tr(Voff) Tcross 90% 10% k IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 10% k k AM01505v1 AM01506v1 DS Rev 3 page 8/20

9 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 20. D²PAK (TO-263) type A package outline _24 Table 7. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Typ. Max. A A b b c DS Rev 3 page 9/20

10 D²PAK (TO-263) type A package information Dim. mm Min. Typ. Max. c D D D E E E e 2.54 e H J L L L R 0.40 V2 0 8 DS Rev 3 page 10/20

11 D²PAK (TO-263) type A package information Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS Rev 3 page 11/20

12 DPAK (TO-252) type A2 package information 4.2 DPAK (TO-252) type A2 package information Figure 22. DPAK (TO-252) type A2 package outline _type-A2_rev24 DS Rev 3 page 12/20

13 DPAK (TO-252) type A2 package information Table 8. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e e H L L L L R 0.20 V2 0 8 DS Rev 3 page 13/20

14 DPAK (TO-252) type A2 package information Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_ _24 DS Rev 3 page 14/20

15 D²PAK and DPAK packing information 4.3 D²PAK and DPAK packing information Figure 24. Tape outline DS Rev 3 page 15/20

16 D²PAK and DPAK packing information Figure 25. Reel outline 40mm min. access hole at slot location T B D C A N Full radius Tape slot in core for tape start 2.5mm min.width G measured at hub AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base quantity 1000 P Bulk quantity 1000 R 50 T W DS Rev 3 page 16/20

17 D²PAK and DPAK packing information Table 10. DPAK tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W DS Rev 3 page 17/20

18 Revision history Table 11. Document revision history Date Revision Changes 05-Sep First release. 11-Sep Feb Modified Section 4.1: "D²PAK (TO-263) type A package information". Minor text changes. Removed maturity status indication from cover page. Updated Table 1. Absolute maximum ratings, Table 2. Thermal data, Table 5. Resistive load switching characteristics and Table 6. Inductive load switching characteristics. Minor text changes. DS Rev 3 page 18/20

19 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information D²PAK (TO-263) type A package information DPAK (TO-252) type A2 package information D²PAK and DPAK packing information...14 Revision history...18 Contents...19 Disclaimer...20 DS Rev 3 page 19/20

20 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DS Rev 3 page 20/20