Order code Marking Package Packaging. STGB30V60DF GB30V60DF D²PAK Tape & reel STGP30V60DF GP30V60DF TO-220 Tube

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1 STGB30V60DF STGP30V60DF 600 V, 30 A very high speed trench gate fieldstop IGBT Datasheet preliminary data Features Maximum junction temperature : T J = 175 C Very high speed switching Negligible tail current Low saturation voltage: V CE(sat) = 1.9 V I C = 30 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Lead free package TO D²PAK 3 Applicatio Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This new IGBT "V" series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging STGB30V60DF GB30V60DF D²PAK Tape & reel STGP30V60DF GP30V60DF TO220 Tube September 2012 Doc ID Rev 1 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 12

2 Electrical ratings STGB30V60DF, STGP30V60DF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collectoremitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 C 60 A I C Continuous collector current at T C = 100 C 30 A I CP (1) Pulsed collector current 120 A V GE Gateemitter voltage ±20 V I F Continuous forward current at T C = 100 C Continuous forward current at T C = 25 C A I FP Pulsed forward current 120 A P TOT Total dissipation at T C = 25 C W T STG T J Storage temperature range Operating junction temperature 1. Pulse width limited by maximum junction temperature and turnoff within RBSOA 55 to 175 C Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junctioncase IGBT 0.83 C/W R thjc Thermal resistance junctioncase diode 2.5 C/W R thja Thermal resistance junctionambient 62.5 C/W 2/12 Doc ID Rev 1

3 STGB30V60DF, STGP30V60DF Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES Collectoremitter breakdown voltage (V GE = 0) I C = 2 ma 600 V V GE = 15 V, I C = 30 A 1.9 V CE(sat) Collectoremitter saturation voltage V GE = 15 V, I C = 30 A T J = 125 C V GE = 15 V, I C = 30 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma 6.0 V I CES I GES Collector cutoff current (V GE = 0) Gateemitter leakage current (V CE = 0) V CE = 600 V 25 µa V GE = ± 20 V 250 na V Table 5. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = Q g Total gate charge 115 nc Q ge Gateemitter charge V CC = 480 V, I C = 30 A, V GE = 15 V nc Q gc Gatecollector charge nc pf pf pf Doc ID Rev 1 3/12

4 Electrical characteristics STGB30V60DF, STGP30V60DF Table 6. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CE = 400 V, I C = 30 A, R G = 10 Ω, V GE = 15 V A/µs t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CE = 400 V, I C = 30 A, R G = 10 Ω, V GE = 15 V T J = 175 C A/µs t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V CE = 400 V, I C = 30 A, R G = 10 Ω, V GE = 15 V t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V CE = 400 V, I C = 30 A, R G = 10 Ω, V GE = 15 V T J = 175 C Table 7. Switching energy (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit Eon (1) (2) E off E ts Eon (1) (2) E off E ts Turnon switching losses Turnoff switching losses Total switching losses Turnon switching losses Turnoff switching losses Total switching losses V CE = 400 V, I C = 30 A, R G = 10 Ω, V GE = 15 V V CE = 400 V, I C = 30 A, R G = 10 Ω, V GE = 15 V T J = 175 C 1. Energy losses include reverse recovery of the diode. 2. Turnoff losses include also the tail of the collector current mj mj mj mj mj mj Table 8. Collectoremitter diode Symbol Parameter Test conditio Min. Typ. Max. Unit V F Forward onvoltage I F = 16 A I F = 16 A, T J = 175 C V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 16 A,V R = 400 V, R G = 10 Ω nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 16 A,V R = 400 V, R G = 10 Ω, T J = 175 C nc A 4/12 Doc ID Rev 1

5 STGB30V60DF, STGP30V60DF Test circuits 3 Test circuits Figure 2. Test circuit for inductive load switching Figure 3. Gate charge test circuit AM01504v1 AM01505v1 Figure 4. Switching waveform Figure 5. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF dv/dt AM01506v1 AM01507v1 Doc ID Rev 1 5/12

6 Package mechanical data STGB30V60DF, STGP30V60DF 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. Table 9. Dim. TO220 type A mechanical data mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q /12 Doc ID Rev 1

7 STGB30V60DF, STGP30V60DF Package mechanical data Figure 6. TO220 type A drawing _typeA_Rev_S Table 10. Dim. D²PAK mechanical data mm Min. Typ. Max. A A b b c c D D E E Doc ID Rev 1 7/12

8 Package mechanical data STGB30V60DF, STGP30V60DF Table 10. Dim. D²PAK mechanical data mm Min. Typ. Max. e 2.54 e H J L L L R 0.4 V2 0 8 Figure 7. D²PAK drawing _S 8/12 Doc ID Rev 1

9 STGB30V60DF, STGP30V60DF Package mechanical data Table 11. D²PAK tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W Figure 8. D²PAK footprint (a) Footprint a. All dimeion are in millimeters Doc ID Rev 1 9/12

10 Package mechanical data STGB30V60DF, STGP30V60DF Figure 9. Tape 10 pitches cumulative tolerance on tape +/ 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 Figure 10. Reel REEL DIMENSIONS T 40mm min. Access hole At sl ot location B D C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 10/12 Doc ID Rev 1

11 STGB30V60DF, STGP30V60DF Revision history 5 Revision history Table 12. Document revision history Date Revision Changes 20Sep Initial release. Doc ID Rev 1 11/12

12 STGB30V60DF, STGP30V60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 12/12 Doc ID Rev 1

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features. Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged