ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC

Transcription

1 Datasheet ACEPACK 2 converter inverter brake, 12 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology 16 V, very low drop rectifiers for converter 12 V, 35 A IGBTs and diodes Soft and fast recovery diode Integrated NTC Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 2 khz. Product status link A2C35S12M3-F Product summary Order code Marking A2C35S12M3-F A2C35S12M3-F Package ACEPACK 2 Leads type Press fit contact pins DS Rev 3 - March 218 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings 1.1 Inverter stage IGBTs Limiting values at T j = 25 C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V CES Collector-emitter voltage (V GE = ) 12 V I C Continuous collector current (T C = 1 C) 35 A I (1) CP Pulsed collector current (t p = 1 ms) 7 A V GE Gate-emitter voltage ± 2 V P TOT Total power dissipation of each IGBT (T C = 25 C, T J = 175 C) 25 W T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES V CE(sat) (terminal) Collector-emitter breakdown voltage Collector-emitter saturation voltage I C = 1 ma, V GE = V 12 V V GE = 15 V, I C = 35 A V V GE = 15 V, I C = 35 A, T J = 15 C 2.3 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current V GE = V, V CE = 12 V 1 μa I GES C ies Gate-emitter leakage current Input capacitance V CE = V, V GE = ±2 V ±5 na 2154 pf C oes Output capacitance V CE = 25 V, f = 1 MHz, V GE = V 164 pf C res Reverse transfer capacitance 86 pf Q g Total gate charge V CC = 96 V, I C = 35 A, V GE = ±15 V 163 nc t d(on) Turn-on delay time V CC = 6 V, I C = 35 A, 127 ns t r Current rise time R G = 1 Ω, V GE = ±15 V, 18.5 ns E (1) on Turn-on switching energy di/dt = 146 A/µs 1.65 mj DS Rev 3 page 2/18

3 Inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit t d(off) Turn-off delay time V CC = 6 V, I C = 35 A, 135 ns t f Current fall time R G = 1 Ω, V GE = ±15 V, 133 ns E (2) off Turn-off switching energy dv/dt = 9 V/µs 1.83 mj t d(on) Turn-on delay time V CC = 6 V, I C = 35 A, 125 ns t r Current rise time R G = 1 Ω, V GE = ±15 V, 2 ns E (1) on Turn-on switching energy di/dt = 1424 A/µs, T J = 15 C 1.79 mj t d(off) Turn-off delay time V CC = 6 V, I C = 35 A, 14 ns t f Current fall time R G = 1 Ω, V GE = ±15 V, 224 ns E (2) off Turn-off switching energy dv/dt = 75 V/µs, T J = 15 C 2.85 mj t SC Short-circuit withstand time V CC 6 V, V GE 15 V, T jstart 15 C 1 µs R THj-c R THc-h Thermal resistance junction-to-case Thermal resistance caseto-heatsink Each IGBT.55.6 C/W Each IGBT,λ grease = 1 W/(m C).7 C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current Diode Limiting values at T j = 25 C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode, inverter stage Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 12 V I F Continuous forward current (T C = 1 C) 35 A I (1) FP Pulsed forward current (t p = 1 ms) 7 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature Table 4. Electrical characteristics of the diode, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit V F (terminal) Forward voltage I F = 35 A I F = 35 A, T J = 15 C V t rr Reverse recovery time - 2 ns Q rr Reverse recovery charge I F = 35 A, V R = 6 V, µc I rrm Reverse recovery current V GE = ±15 V, di F /dt = 146 A/μs - 43 A E rec Reverse recovery energy mj DS Rev 3 page 3/18

4 Brake stage Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time - 38 ns Q rr Reverse recovery charge I F = 35 A, V R = 6 V, µc I rrm Reverse recovery current V GE = ±15 V, di F /dt = 1424 A/μs, T J = 15 C - 6 A E rec Reverse recovery energy mj R THj-c R THc-h Thermal resistance junction-to-case Thermal resistance caseto-heatsink Each diode C/W Each diode, λ grease = 1 W/(m C) -.75 C/W 1.2 Brake stage IGBT Limiting values at T j = 25 C, unless otherwise specified. Table 5. Absolute maximum ratings of the IGBT, brake stage Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = ) 12 V I C Continuous collector current (T C = 1 C) 35 A I (1) CP Pulsed collector current (t p = 1 ms) 7 A V GE Gate-emitter voltage ±2 V P TOT Total power dissipation of each IGBT (T C = 25 C, T J = 175 C) 25 W T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 6. Electrical characteristics of the IGBT, brake stage Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage I C = 1 ma, V GE = V 12 V V CE(sat) (terminal) Collector-emitter saturation voltage V GE = 15 V, I C = 35 A 1.95 V GE = 15 V, I C = 35 A, 2.3 T J = 15 C V V GE(th) Gate threshold voltage V CE = V GE, I C = 1mA V I CES Collector cut-off current V GE = V, V CE = 12 V 1 µa I GES Gate-emitter leakage current V CE = V, V GE = ±2 V ± 5 na C ies Input capacitance 2154 pf C oes Output capacitance V CE = 25 V, f = 1 MHz, V GE = V 164 pf C res Reverse transfer capacitance 86 pf DS Rev 3 page 4/18

5 Brake stage Symbol Parameter Test conditions Min. Typ. Max. Unit Q g Total gate charge V CC = 96 V, I C = 35 A, V GE = ±15 V 163 nc t d(on) Turn-on delay time V CC = 6 V, I C = 35 A, 127 ns t r Current rise time R G = 1 Ω, V GE = ±15 V, 18.5 ns E (1) on Turn-on switching energy di/dt = 146 A/µs 1.65 mj t d(off) Turn-off delay time V CC = 6 V, I C = 35 A, 135 ns t f Current fall time R G = 1 Ω, V GE = ±15 V, 133 ns E (2) off Turn-off switching energy dv/dt = 9 V/µs 1.83 mj t d(on) Turn-on delay time V CC = 6 V, I C = 35 A, 125 ns t r Current rise time R G = 1 Ω, V GE = ±15 V, 2 ns E (1) on Turn-on switching energy di/dt = 1424 A/µs,T J = 15 C 1.79 mj t d(off) Turn-off delay time V CC = 6 V, I C = 35 A, 14 ns t f Current fall time R G = 1 Ω, V GE = ±15 V, 224 ns E (2) off Turn-off switching energy dv/dt = 75 V/µs,T J = 15 C 2.85 mj t SC Short-circuit withstand time V CC 6 V, V GE 15 V, T Jstart 15 C 1 µs R THj-c R THc-h Thermal resistance junction-tocase Thermal resistance case-toheatsink Each IGBT.55.6 C/W Each IGBT, λ grease = 1 W/(m C).7 C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. DS Rev 3 page 5/18

6 Brake stage Diode Table 7. Absolute maximum ratings of the diode, brake stage Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 12 V I F Continuous forward current (T C = 1 C) 35 A I (1) FP Pulsed forward current (t p = 1 ms) 7 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature Table 8. Electrical characteristics of the diode, brake stage Symbol Parameter Test conditions Min. Typ. Max. Unit V F (terminal) Forward voltage I F = 35 A I F = 35 A, T J = 15 C V t rr Reverse recovery time - 2 ns Q rr Reverse recovery charge I F = 35 A, V R = 6 V, V GE = ±15 V, µc I rrm Reverse recovery current di/dt = 146 A/μs - 43 A E rec Reverse recovery energy mj t rr Reverse recovery time - 38 ns Q rr Reverse recovery charge I F = 35 A, V R = 6 V, V GE = ±15 V, µc I rrm Reverse recovery current di/dt = 1424 A/μs, T J = 15 C - 6 A E rec Reverse recovery energy mj R THj-c R THc-h Thermal resistance junction-to-case Thermal resistance caseto-heatsink Each diode C/W Each diode, λ grease = 1 W/(m C) -.75 C/W DS Rev 3 page 6/18

7 Converter stage 1.3 Converter stage Limiting values at T j = 25 C, unless otherwise specified. Table 9. Absolute maximum ratings of the bridge rectifiers Symbol Description Value Unit V RRM Repetitive peak reverse voltage 16 V I F RMS forward current 7 A I Forward surge current, t p = 1 ms, T C = 25 C 45 FSM Forward surge current, t p = 1 ms, T C = 15 C 365 A I 2 t t p = 1 ms, T C = 25 C 112 t p = 1 ms, T C = 15 C 666 A 2 s T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C Table 1. Electrical characteristics of the bridge rectifiers Symbol Parameter Test conditions Min. Typ. Max. Unit V F (terminal) Forward voltage I F = 35 A I F = 35 A, T J = 15 C V I R Reverse current T J = 15 C, V R = 16 V - 1 ma R THj-c R THc-h Thermal resistance junction-tocase Thermal resistance case-toheatsink Each diode C/W Each diode, λ grease = 1 W/(m C) -.95 C/W DS Rev 3 page 7/18

8 NTC 1.4 NTC Table 11. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. Unit R 25 Resistance T = 25 C 5 kω R 1 Resistance T = 1 C 493 Ω ΔR/R Deviation of R % B 25/5 B-constant 3375 K B 25/8 B-constant 3411 K T Operating temperature range C Figure 1. NTC resistance vs temperature Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG NTC R (Ω) GADG NTCZ max 6 min typ T C ( C) T C ( C) 1.5 Package Table 12. ACEPACK 2 package Symbol Parameter Min. Typ. Max. Unit V isol Isolation voltage (AC voltage, t = 6 s) 25 V T stg Storage temperature C CTI Comparative tracking index 2 L s Stray inductance module P1 - EW loop 33.5 nh R s Module single lead resistance, terminal-to-chip 3.6 mω DS Rev 3 page 8/18

9 Electrical characteristics (curves) 2 Electrical characteristics (curves) Figure 3. IGBT output characteristics (V GE = 15 V, terminal) Figure 4. IGBT output characteristics (T J = 15 C, terminal) I C (A) 6 T J = 25 C IGBT OC25 I C (A) 6 17 V 19 V IGBT OC V 11 V 5 T J = 15 C 5 15 V V V CE (V) V CE (V) I C (A) Figure 5. IGBT output characteristics (V CE = 15 V, terminal) T J = 15 C IGBT TCH T J = 25 C V GE (V) Figure 6. Switching energy vs gate resistance E IGBT SLG (mj) 9 V CC = 6 V, I C = 35 A, V GE ±15 V 8 Eon (TJ = 15 C) Eon (TJ = 25 C) Eoff (TJ = 15 C) 3 2 Eoff (TJ = 25 C) R G (Ω) DS Rev 3 page 9/18

10 Electrical characteristics (curves) Figure 7. Switching energy vs collector current E (mj) 5 4 IGBT SLC V CC = 6 V, R G = 1 Ω, V GE ± 15 V Eoff (TJ = 15 C) Figure 8. IGBT reverse biased safe operating area (RBSOA) I C (A) 7 6 IGBT FSOA Eoff (TJ = 25 C) Eon (TJ = 15 C) Eon (TJ = 25 C) I C (A) 1 T J = 125 C, V GE = ±15 V, R G = 1 Ω V CE (V) Figure 9. Diode forward characteristics (terminal) I F (A) IGBT DVF 6 5 T J = 15 C T J = 25 C V F (V) Figure 1. Diode reverse recovery energy vs diode current slope E rec (mj) IGBT RRE V CE = 6 V, I F = 35 A, V GE = ±15 V T J =15 C T J =25 C di/dt (A/µs) Figure 11. Diode reverse recovery energy vs forward current Figure 12. Diode reverse recovery energy vs gate resistance E rec (mj) 4.2 IGBT DVF V CE = 6 V, V GE ± 15 V, R G = 1 Ω E rec (mj) 3.2 IGBT STR V CE = 6 V, V GE ± 15 V, I F = 35 A T J = 15 C T J = 25 C T J = 15 C T J = 25 C I F (A) R G (Ω) DS Rev 3 page 1/18

11 Electrical characteristics (curves) Figure 13. Converter diode forward characteristics (terminal) I F (A) IGBT DVF Zth( C/W) Figure 14. IGBT thermal impedance IGBTMT MTZTH Zth(typ.) JH 4 T J = 15 C 3 2 T J = 25 C VF (V) 1-1 Zth(max.) JC JC RC - Foster Thermal Network i r i ( C/W) τ i (s) JH RC - Foster Thermal Network i r i ( C/W) τ i (s) t (s) Figure 15. Inverter diode thermal impedance Zth( C/W) IGBT MTNZTH Zth(typ.) JH 1 Zth(max.) JC JC RC - Foster Thermal Network i r i ( C/W) τ i (s) JH RC - Foster Thermal Network i r i ( C/W) τ i (s) t (s) DS Rev 3 page 11/18

12 Test circuits 3 Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit C A A k k G L=1 µh + E R G B B G C 3.3 µf E D.U.T 1 µf V CC k k - k k AM15 4v 1 AM155v1 Figure 18. Switching waveform Figure 19. Diode reverse recovery waveform 9% VG 1% 9% VCE Tr(Voff) Tcross 9% 1% 25 IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 1% AM156v1 DS Rev 3 page 12/18

13 Topology and pin description 4 Topology and pin description Figure 2. Electrical topology and pin description P P1 G1 G3 G5 L1 L2 L3 T1 GB B U V W G2 G4 G6 T2 N NB EU EV EW Figure 21. Package top view with CIB pinout W W G3 V V G1 U U L3 L3 G5 T2 P1 P1 L2 L2 L1 T1 B L1 P P EW EW G6 EV EV G4 EU EU G2 NB GB N N DS Rev 3 page 13/18

14 W T2 T1 EW W G5 EW G6 G3 V V G1 P1 EV EV G4 EU EU G2 NB B U P1 GB U L1 L1 L2 L2 L3 P N L3 P N A2C35S12M3-F Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 5.1 ACEPACK 2 CIB press fit contact pins package information Figure 22. ACEPACK 2 CIB press fit contact pins package outline (dimensions are in mm) Detail A 3.5 REF x ±.3 51± ± ±.2 1.3± ±.5 48±.3 37 REF 42.5±.2 53± REF BSC A A 16.4±.5 12± ± BSC 4.5± REF _ACEPACK2_CIB_Press_fit_contact_pins_rev4 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DS Rev 3 page 14/18

15 ACEPACK 2 CIB press fit contact pins package information Figure 23. ACEPACK 2 CIB press fit contact pins recommended PCB holes layout (dimensions are in mm) _ACEPACK2_CIB_Press_fit_contact_pins_PCBholes_rev4 DS Rev 3 page 15/18

16 Revision history Table 13. Document revision history Date Revision Changes 3-May Initial release. 22-Sep Mar Updated title, features and description in cover page. Updated Table 1: "Device summary", Section 1: "Electrical ratings", Section 2: "Electrical characteristics curves", Section 4: "Topology and pin description" and Section 5: "Package information". Minor text changes. Removed maturity status indication from cover page. The document status is production data. Updated features on cover page. Updated Table 1. Electrical characteristics of the bridge rectifiers. Updated Figure 14. IGBT thermal impedance and Figure 15. Inverter diode thermal impedance. Updated Section 5.1 ACEPACK 2 CIB press fit contact pins package information. Minor text changes DS Rev 3 page 16/18

17 Contents Contents 1 Electrical ratings Inverter stage IGBTs Diode Brake stage IGBT Diode Converter stage NTC Package Electrical characteristics (curves) Test circuits Topology and pin description Package information ACEPACK 2 CIB press fit contact pins package information...14 Revision history...16 DS Rev 3 page 17/18

18 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 3 page 18/18