STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

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STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

1 STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low V CE(sat) Trench IGBT technology 1μs short circuit capability V CE(sat) with positive temperature coefficient Maximum junction temperature 175 o C Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic 216 STARPOWER Semiconductor Ltd. 1/27/216 1/9 SFA

2 Absolute Maximum Ratings T C =25 o C unless otherwise noted IGBT Symbol Description Value Unit V CES Collector-Emitter Voltage 12 V V GES Gate-Emitter Voltage ±2 V I C Collector T C =25 o C T C =1 o C 45 A I CM Pulsed Collector Current t p =1ms 9 A P D Maximum Power T j =175 o C 2173 W Diode Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 12 V I F Diode Continuous Forward Current 45 A I FM Diode Maximum Forward Current t p =1ms 9 A Module Symbol Description Value Unit T jmax Maximum Junction Temperature 175 o C T jop Operating Junction Temperature -4 to +15 o C T STG Storage Temperature Range -4 to +125 o C V ISO Isolation Voltage RMS,f=5Hz,t=1min 4 V 216 STARPOWER Semiconductor Ltd. 1/27/216 2/9 SFA

3 IGBT Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I C =45A,V GE =15V, T j =25 o C V CE(sat) Collector to Emitter Saturation Voltage I C =45A,V GE =15V, T j =125 o C 1.95 V I C =45A,V GE =15V, T j =15 o C 2. V GE(th) Gate-Emitter Threshold Voltage I C =11.3mA,V CE =V GE, T j =25 o C V I CES Collector Cut-Off Current V CE =V CES,V GE =V, T j =25 o C 1. ma I GES Gate-Emitter Leakage Current V GE =V GES,V CE =V, T j =25 o C 4 na R Gint Internal Gate Resistance 1.7 Ω t d(on) Turn-On Delay Time 328 ns t r Rise Time 76 ns t d(off) Turn-Off Delay Time 539 ns V CC =6V,I C =45A, t f Fall Time 18 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =25 o on C 19.5 mj E off Turn-Off Switching 46.6 mj t d(on) Turn-On Delay Time 376 ns t r Rise Time 86 ns t d(off) Turn-Off Delay Time 595 ns V CC =6V,I C =45A, t f Fall Time 214 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =125 o on C 36.3 mj E off Turn-Off Switching 53.5 mj t d(on) Turn-On Delay Time 38 ns t r Rise Time 89 ns t d(off) Turn-Off Delay Time 68 ns V CC =6V,I C =45A, t f Fall Time 232 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =15 o on C 41.7 mj E off Turn-Off Switching 55.5 mj I SC SC Data t P 1μs,V GE =15V, T j =15 o C,V CC =8V, V CEM 12V 18 A 216 STARPOWER Semiconductor Ltd. 1/27/216 3/9 SFA

4 Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I Diode Forward F =45A,V GE =V,T j =25 o C V F I V Voltage F =45A,V GE =V,T j =125 o C 1.65 I F =45A,V GE =V,T j =15 o C 1.65 Q r Recovered Charge 29.4 μc Peak Reverse V CC =6V,I F =45A, I RM 275 A Recovery Current -di/dt=437a/μs,v GE =-15V, Reverse Recovery T j =25 o C E rec 13.2 mj Energy Q r Recovered Charge 68.8 μc Peak Reverse V CC =6V,I F =45A, I RM 342 A Recovery Current -di/dt=437a/μs,v GE =-15V, Reverse Recovery T j =125 o C E rec 31.6 mj Energy Q r Recovered Charge 79.6 μc Peak Reverse V CC =6V,I F =45A, I RM 354 A Recovery Current -di/dt=437a/μs,v GE =-15V, Reverse Recovery T j =15 o C E rec 35.8 mj Energy Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit L CE Stray Inductance 2 nh R CC +EE Module Lead Resistance, Terminal to Chip.35 mω R thjc R thch Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) K/W K/W Terminal Connection Torque, Screw M M N.m Mounting Torque, Screw M G Weight of Module 3 g 216 STARPOWER Semiconductor Ltd. 1/27/216 4/9 SFA

5 V GE =15V 75 V CE =2V 6 6 I C [A] 45 I C [A] Tj=25 Tj=125 Tj= V CE [V] 15 Tj=25 Tj=125 Tj= V GE [V] Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj= Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj= E [mj] 8 E [mj] V CC =6V R G =1.5Ω V GE =±15V I C [A] V CC =6V I C =45A V GE =±15V R G [Ω] Fig 3. IGBT Switching vs. I C Fig 4. IGBT Switching vs. R G 216 STARPOWER Semiconductor Ltd. 1/27/216 5/9 SFA

6 Module IGBT I C [A] Z thjc [K/W] R G =1.5Ω V GE =±15V T j =15 o C V CE [V] i: r i [K/W]: τ i [s]: t [s] Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance 9 75 Tj=25 Tj=125 Tj= Erec Tj=125 Erec Tj= I F [A] 45 3 E [mj] V CC =6V R G =1.5Ω V GE =-15V V F [V] I F [A] Fig 7. Diode Forward Characteristics Fig 8. Diode Switching vs. I F 216 STARPOWER Semiconductor Ltd. 1/27/216 6/9 SFA

7 E [mj] Erec Tj=125 Erec Tj=15 Z thjc [K/W] Diode 1 V CC =6V I F =45A V GE =-15V R G [Ω] i: r i [K/W]: τ i [s]: t [s] Fig 9. Diode Switching vs. R G Fig 1. Diode Transient Thermal Impedance 216 STARPOWER Semiconductor Ltd. 1/27/216 7/9 SFA

8 Circuit Schematic Package Dimensions Dimensions in Millimeters 216 STARPOWER Semiconductor Ltd. 1/27/216 8/9 SFA

9 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 216 STARPOWER Semiconductor Ltd. 1/27/216 9/9 SFA

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed