T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1
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1 CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania (7) Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3 PLACES) L K CE1 E Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C D E F G H J K L M N.. J G1 E1 E G H LC X C1 Y P Q W - ( PLACES) U G E E1 G1 P LABEL Dimensions Inches Millimeters P Q R S M M T.6 Dia. 6.5 Dia. S.3. V.97.5 W M M X Y Z AA.79. V D Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CMDU-3KA is a 17V (V CES ), Ampere Dual IGBTMOD Power Module. Current Rating V CES Type Amperes Volts (x 5) CM 3 1
2 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania (7) CMDU-3KA Amperes/17 Volts Absolute Maximum Ratings, T j = 5 C unless otherwise specified Ratings Symbol CMDU-3KA Units Junction Temperature T j - to 15 C Storage Temperature T stg - to 15 C Collector-Emitter Voltage (G-E SHORT) V CES 17 Volts Gate-Emitter Voltage (C-E SHORT) V GES ± Volts Collector Current (T c = 5 C) I C Amperes Peak Collector Current I CM * Amperes Emitter Current** (T c = 5 C) I E Amperes Peak Emitter Current** I EM * Amperes Maximum Collector Dissipation (T c = 5 C, T j 15 C) P c 195 Watts Mounting Torque, M Main Terminal 95 in-lb Mounting Torque, M6 Mounting in-lb G(E) Terminal, M 15 in-lb Weight 1 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 35 Volts * Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating. Static Electrical Characteristics, T j = 5 C unless otherwise specified Collector-Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate Leakage Current I GES V GE = V GES, V CE = V.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = ma, V CE = 1V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = A, V GE = 15V, 3..1 Volts I C = A, V GE = 15V, T j = 15 C 3. Volts Total Gate Charge Q G V CC = 1V, I C = A, V GE = 15V 1 nc Emitter-Collector Voltage** V EC I E = A, V GE = V,.6 Volts Dynamic Electrical Characteristics, T j = 5 C unless otherwise specified I E = A, V GE = V, T j = 15 C. Volts Input Capacitance C ies 57. nf Output Capacitance C oes V CE = 1V, V GE = V 9.6 nf Reverse Transfer Capacitance C res 3. nf Resistive Turn-on Delay Time t d(on) V CC = 1V, I C = A, 1 ns Load Rise Time t r V GE1 = V GE = 15V, 3 ns Switch Turn-off Delay Time t d(off) R G = 1.Ω, Resistive 1 ns Times Fall Time t f Inductive Load ns Diode Reverse Recovery Time** t rr Switching Operation 6 ns Diode Reverse Recovery Charge** Q rr I E = A 1.9 µc
3 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania (7) CMDU-3KA Amperes/17 Volts Thermal and Mechanical Characteristics, T j = 5 C unless otherwise specified Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/ Module.6 C/W Thermal Resistance, Junction to Case R th(j-c) D Per FWDi 1/ Module.11 C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied.1 C/W Thermal Resistance R th(j-c') Q T c Measured Point.5* C/W (Under Chips - IGBT Part) * If you use this value, R th(f-a) should be measured just under the chips. OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS T j = 5 o C 15 1 V GE = V V CE = 1V T j = 15 C SATURATION VOLTAGE, V CE(sat), (VOLTS) V GE = 15V T j = 15 C SATURATION VOLTAGE, V CE(sat), (VOLTS) VOLTAGE, V CE, (VOLTS) SATURATION VOLTAGE CHARACTERISTICS I C = A I C = A I C = 16A 1 16 EMITTER CURRENT, I E, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CAPACITANCE, C ies, C oes, C res, (nf) COLLECTOR-CURRENT, I C, (AMPERES) CAPACITANCE VS. V CE C ies C oes C res V GE = V f = 1MHz VOLTAGE, V CE, (VOLTS) 3
4 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania (7) CMDU-3KA Amperes/17 Volts SWITCHING TIME, (ns) REVERSE RECOVERY CHARACTERISTICS V CC = 1V t r V GE = ±15V R G = 1.Ω T j = 15 C 1 1 INDUCTIVE LOAD t f t d(off) t d(on) REVERSE RECOVERY TIME, t rr, (ns) 1 3 REVERSE RECOVERY CHARACTERISTICS V CC = 1V V GE = ±15V R G = 1.Ω INDUCTIVE LOAD t rr I rr EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY CURRENT, I rr, (AMPERES) 16 1 I C = A GATE CHARGE, V GE V CC = V GATE CHARGE, Q G, (nc) V CC = 1V NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) Single Pulse T C = 5 C Per Unit Base = R th(j-c) =.6 C/W 1-5 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) Single Pulse T C = 5 C Per Unit Base = R th(j-c) =.11 C/W 1-5 TIME, (s)
5 This datasheet is downloaded from: IGBT Express, your specialist and sourcing expert when it comes to finding modules you need.
Technical. Application. Assembly. Availability. Pricing. Phone
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