STARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package

Transcription

1 STARPOWER SEMICONDUCTOR IGBT GD1HFL17P2S Molding Type Module 17V/1A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind and solar power. Features Low V CE(sat) SPT+ IGBT technology 1μs short circuit capability V CE(sat) with positive temperature coefficient Maximum junction temperature 175 Low inductance case Fast & soft reverse recovery anti-parallel FWD High power and thermal cycling capability Typical Applications Auxiliary Inverters High Power Converters UPS Wind and Solar Power Traction Drives 21 STARPOWER Semiconductor Ltd. 12/3/21 1/9 Preliminary

2 Absolute Maximum Ratings T C =25 unless otherwise noted Symbol Description GD1HFL17P2S Unit V CES Collector-Emitter Voltage 17 V V GES Gate-Emitter Voltage ±2 V I C Collector T C =25 T C =1 1 A I CM Pulsed Collector Current t p =1ms 2 A I F Diode Continuous Forward Current 1 A I FM Diode Maximum Forward Current t p =1ms 2 A P D Maximum Power T j = kw T jmax Maximum Junction Temperature 175 T jop Operating Junction Temperature -4 to +15 T STG Storage Temperature Range -4 to +125 V ISO Isolation Voltage RMS,f=5Hz,t=1min 4 V Mounting Torque Power Terminal Screw:M4 1.8 to 2.1 N.m Power Terminal Screw:M8 8. to 1 Mounting Screw:M5 3. to 6. N.m Electrical Characteristics of IGBT T C =25 unless otherwise noted Off Characteristics Collector-Emitter Breakdown Voltage 17 V Collector Cut-Off V CE =V CES,V GE =V, Current 5. ma Gate-Emitter Leakage V GE =V GES,V CE =V, Current 4 na V (BR)CES I CES I GES On Characteristics Gate-Emitter Threshold I C =4.mA,V CE =V GE, V Voltage I C =1A,V GE =15V, Collector to Emitter V Saturation Voltage I C =1A,V GE =15V, 2.35 V GE(th) V CE(sat) 21 STARPOWER Semiconductor Ltd. 12/3/21 2/9 Preliminary

3 Switching Characteristics t d(on) Turn-On Delay Time 18 ns t r Rise Time 13 ns V CC =9V,I C =1A, t d(off) Turn-Off Delay Time 45 ns R Gon =1.2Ω, t f Fall Time R Goff =1.8Ω, 13 ns Turn-On Switching E on V GE =±15V, 22 mj Loss Turn-Off Switching E off 17 mj Loss t d(on) Turn-On Delay Time 19 ns t r Rise Time 14 ns V CC =9V,I C =1A, t d(off) Turn-Off Delay Time 53 ns R Gon =1.2Ω, t f Fall Time R Goff =1.8Ω, 14 ns Turn-On Switching E on V GE =±15V, 32 mj Loss Turn-Off Switching E off 27 mj Loss C ies Input Capacitance 95. nf C oes Output Capacitance V CE =25V,f=1MHz, 6.4 nf C res Reverse Transfer Capacitance V GE =V 4. nf I SC SC Data t P 1μs,V GE =15V,,V CC =1V, 31 A V CEM 17V R Gint Internal Gate Resistance.4 Ω Q G Gate Charge V CC =9V,I C =1A, V GE = V 7.7 μc L CE Stray Inductance 1 nh R CC +EE Module Lead Resistance, Terminal To Chip.2 mω Electrical Characteristics of Diode T C =25 unless otherwise noted V F Diode Forward I Voltage F =1A 1.85 V Q r Recovered Charge I F =1A, μc I RM Recovery Current R G =1.2Ω, 15 Peak Reverse V R =9V, 8 A E rec Reverse Recovery V GE =-15V 12 Energy 215 mj 21 STARPOWER Semiconductor Ltd. 12/3/21 3/9 Preliminary

4 Electrical Characteristics of NTC T C =25 unless otherwise noted R 25 Rated Resistance 5. kω R/R Deviation of R 1 T C =1,R 1 =493.3Ω -5 5 % P 25 B 25/5 Power Dissipation B-value R 2 =R 25 exp[b 25/5 (1/T 2-1/(298.15K))] 2. mw 3375 K Thermal Characteristics Symbol Parameter Typ. Max. Unit R θjc Junction-to-Case (per IGBT) 23. K/kW R θjc Junction-to-Case (per Diode) 34. K/kW R θcs Case-to-Sink (Conductive grease applied) 3. K/kW Weight Weight of Module 12 g 21 STARPOWER Semiconductor Ltd. 12/3/21 4/9 Preliminary

5 V GE =15V 18 V CE =2V I C [A] I C [A] V CE [V] V GE [V] Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics 1 16 E [mj] V CC =9V R Gon =1.2Ω R Goff =1.8Ω V GE =±15V E ON E [mj] E ON V CC =9V I C =1A V GE =±15V 2 E OFF 4 2 E OFF I C [A] R G [Ω] Fig 3. IGBT Switching Loss vs. I C Fig 4. IGBT Switching Loss vs. R G 21 STARPOWER Semiconductor Ltd. 12/3/21 5/9 Preliminary

6 Module 16 I C [A] 12 Z thjc [K/kW] R Goff =1.8Ω V GE =±15V i: r i [K/kW]: τ i [s]: V CE [V] t [s] Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance E REC I F [A] E [mj] V CC =9V R G =1.2Ω V GE =-15V V F [V] I F [A] Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. I F 21 STARPOWER Semiconductor Ltd. 12/3/21 6/9 Preliminary

7 E REC E [mj] V CC =9V I F =1A V GE =-15V Z thjc [K/kW] 1 i: r i [K/kW]: τ i [s]: R G [Ω] t [s] Fig 9. Diode Switching Loss vs. R G Fig 1. Diode Transient Thermal Impedance 1 1 R [kω] T C [ ] Fig 11. NTC Temperature Characteristic 21 STARPOWER Semiconductor Ltd. 12/3/21 7/9 Preliminary

8 Equivalent Circuit Schematic Package Dimensions Dimensions in Millimeters 21 STARPOWER Semiconductor Ltd. 12/3/21 8/9 Preliminary

9 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 21 STARPOWER Semiconductor Ltd. 12/3/21 9/9 Preliminary