Symbol Parameter/Test Conditions Values Unit T C = T C =75 800
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1 MMG8K12U6HN 12 8 IGBT Module June 215 ersion 1 RoHS Compliant PRODUCT FETURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) CE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses 5K Ω Gate Protected Resistance Iide PPLICTIONS High frequency switching application Medical applicatio Motion/servo control UPS systems BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues CES Collector Emitter oltage T J = 12 GES Gate Emitter oltage ±2 I C DC Collector Current T C = 15 T C =75 8 I CM Repetitive Peak Collector Current tp=1ms 16 P tot Power Dissipation Per IGBT 395 W BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues RRM Repetitive Reverse oltage T J = 12 I F() verage Forward Current T C = 8 I FRM Repetitive Peak Forward Current tp=1ms 16 I 2 t, t=1ms, R = S MacMic Science & Technology Co., Ltd. dd:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.: Fax: Post Code:21322 Website: 1
2 MMG8K12U6HN ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. GE(th) Gate Emitter Threshold oltage CE = GE, I C =32m CE(sat) Collector Emitter Saturation oltage I C =8, GE =15, T J = I C =8, GE =15, 2.5 I CES Collector Leakage Current CE =12, GE =, T J = 1 CE =12, GE =, 1 I GES Gate Leakage Current CE =, GE =±15, T J = -4 4 R gint Integrated Gate Resistor 1 Q g Gate Charge CE =6, I C =8, GE = C ies Input Capacitance 5 CE =25, GE =, f =1MHz C res Reverse Trafer Capacitance 2.8 T J = 25 t d(on) Turn on Delay Time CC =6,I C =8 R G =1.Ω, GE =±15, t r Rise Time t d(off) Turn off Delay Time CC =6,I C =8 R G =1.Ω, GE =±15, t f Fall Time E on E off I SC Turn on Energy Turn off Energy Short Circuit Current CC =6,I C =8 R G =1.Ω, GE =±15, tpsc 1µS, GE =15, CC =6 32 T J =15 34 T J = 9 95 T J =15 1 T J = T J =15 7 T J = 6 8 T J = T J = T J =15 55 m m n Ω µc nf nf 32 R thjc Junction to Case Thermal Resistance ( Per IGBT).38 K /W ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. F Forward oltage I F =8, GE =, T J = I F =8, GE =, 2.25 t rr Reverse Recovery Time I F =8, R =6 45 I RRM Max. Reverse Recovery Current di F /dt=-8/μs 72 Q RR Reverse Recovery Charge 95 E rec Reverse Recovery Energy 4 R thjcd Junction to Case Thermal Resistance ( Per Diode).65 µc K /W 2
3 MMG8K12U6HN MODULE CHRCTERISTICS Symbol Parameter/Test Conditio alues T Jmax Max. Junction Temperature 175 T Jop Operating Temperature -4~15 T stg Storage Temperature -4~125 isol Isolation Breakdown oltage C, 5Hz(R.M.S), t=1minute 3 to heatsink Recommended(M6) 3~5 Torque to terminal Recommended(M6) 2.5~5 to terminal Recommended(M4).7~1.1 Weight 33 g ge=17 ge=15 ge=13 ge=1 8 8 ge= CE () Figure 1. Typical Output Characteristics CE () Figure 2. Typical Output Characteristics CE =2 1 E on E off () CE =6 I C =8 GE =±15 Eon Eoff GE () Rg(Ω) Figure 3. Typical Trafer Characteristics Figure 4. Switching Energy vs Gate Resistor 3
4 MMG8K12U6HN E on E off () CE =6 R g =1.Ω GE =±15 Eon Eoff R g =1.Ω GE =± CE () Figure 5. Switching Energy vs Collector Current Figure 6. Reverse Biased Safe Operating rea DC 6 45 DC T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter T C ( ) Figure 8. Forward current vs Case temperature E REC () CE =6 I F = F () Rg(Ω) Figure 9. Diode Forward Characteristics Figure 1. Switching Energy vs Gate Resistor 4
5 MMG8K12U6HN 7 1 E REC () CE =6 R g =1.Ω Z thjc (K/W).1.1 IGBT DIODE Rectangular Pulse Duration (s) Figure 11. Switching Energy vs Forward Current Figure 12. Traient Thermal Impedance of and Dimeio in (mm) Figure 13. Package Outline 5
Symbol Parameter/Test Conditions Values Unit T C = T C =80 100
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bsolute Maximum Ratings Symbol Conditio ) CES CGR M GES P tot T j, (T stg ) T cop isol humidity climate R GE = kω T HS = 5/7 C T HS = 5/7 C; t p = ms per IGBT, T HS = 5 C max. case operating temperature
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Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
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BSM 3 G 12 DN2S IGBT Power Module Single switch Including fast freewheeling diodes Package with insulated metal base plate Type Package Ordering Code BSM 3 G 12 DN2 12V 43 SINGLE SWITCH 1 C6776277 BSM
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Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
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62 Baker Road, Suite 8 Minnetonka, MN 55345 www.chtechnology.com Phone (952) 933-69 Fax (952) 933-6223 -8-274-4284 ank you for downloading this document from C&H Technology, Inc. Please contact the C&H
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611 Baker Road, Suite 1 Minnetonka, MN 5535 www.chtechnology.com Phone (95) 933-619 Fax (95) 933-63 1--7- Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology
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