I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.

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1 Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO Qualified according to JEDEC 1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : Type V CE I C V CE(sat) T j Marking Package SGB10N6 600V 1 2.3V 150 C G10N6 PG-TO Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE 600 V DC collector current T C = 25 C T C = 100 C I C A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40 Gate-emitter voltage V GE ±20 V Avalanche energy, single pulse E AS 70 mj I C = 10 A, V CC = 50 V, R GE = 25 Ω, start at T j = 25 C Short circuit withstand time 2 t SC 10 µs V GE = 15V, V CC 600V, T j 150 C Power dissipation P tot 92 W T C = 25 C Operating junction and storage temperature T j, T stg C Soldering temperature (reflow soldering MSL1) J-STD-020 and JESD Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 July 07

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case R thjc 1.35 Thermal resistance, R thja 40 junction ambient 1) K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V (BR)CES V GE =0V, I C =500µA Collector-emitter saturation voltage V CE(sat) V GE = 15V, I C =1 T j =25 C T j =150 C Gate-emitter threshold voltage V GE(th) I C =300µA,V CE =V GE Zero gate voltage collector current I CES V CE =600V,V GE =0V T j =25 C T j =150 C Gate-emitter leakage current I GES V CE =0V,V GE =20V na Transconductance g fs V CE =20V, I C = S Dynamic Characteristic Input capacitance C iss V CE =25V, Output capacitance C oss V GE =0V, Reverse transfer capacitance f=1mhz C rss Gate charge Q Gate V CC =480V, I C =1 V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) I C(SC) V GE =15V,t SC 10µs V CC 600V, T j 150 C Unit V µa pf nc L E nh A 1) Device on 50mm50mm1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.3 July 07

3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =25 C, Rise time t V CC =400V,I C =1, r V GE =0/15V, Turn-off delay time t d(off) R G =25Ω, Fall time t f 1) L σ =180nH, Turn-on energy E on 1) C σ =55pF Turn-off energy E Energy losses include off tail and diode Total switching energy E ts reverse recovery Unit ns mj Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =150 C Rise time t V CC =400V,I C =1, r V GE =0/15V, Turn-off delay time t d(off) R G =25Ω Fall time t f 1) L σ =180nH, Turn-on energy E on 1) C σ =55pF Turn-off energy E Energy losses include off tail and diode Total switching energy E ts reverse recovery Unit ns mj 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.3 July 07

4 5 T C =80 c I c t p =5µs T C =110 c 10Hz 100Hz 1kHz 10kHz 100kHz I c 1 15µs 50µs 1A 0,1A 200µs 1ms DC 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 25Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C) 120W 25A 100W 2 Ptot, POWER DISSIPATION 80W 60W 40W 20W 15A 1 5A 0W 25 C 50 C 75 C 100 C 125 C 25 C 50 C 75 C 100 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) 4 Rev. 2.3 July 07

5 35A 35A A 2 15A 1 5A V GE =20V 15V 13V 11V 9V 7V 5V 25A 2 15A 1 5A V GE =20V 15V 13V 11V 9V 7V 5V 0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V V CE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (T j = 25 C) V CE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (T j = 150 C) 35A 3 25A 2 15A 1 5A T j =+25 C +150 C 0V 2V 4V 6V 8V 10V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 3,5V 3,0V 2,5V 2,0V I C =2 I C =1 I C =5A 1,5V 0 C 50 C 100 C 150 C V GE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (V CE = 10V) T j, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V GE = 15V) 5 Rev. 2.3 July 07

6 t d(off) t, SWITCHING TIMES 100ns t f t d(on) t, SWITCHING TIMES 100ns t d(off) t f t r t d(on) 10ns 5A 1 15A 2 25A t r 10ns 0Ω 20Ω 40Ω 60Ω 80Ω I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, R G = 25Ω, R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, I C = 1, 5,5V t, SWITCHING TIMES 100ns t d(off) t d(on) t f t r 10ns 0 C 50 C 100 C 150 C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V max. typ. min. -50 C 0 C 50 C 100 C 150 C T j, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V, I C = 1, R G = 25Ω, T j, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.3mA) 6 Rev. 2.3 July 07

7 E, SWITCHING ENERGY LOSSES 1,6mJ 1,4mJ 1,2mJ 1,0mJ 0,8mJ 0,6mJ 0,4mJ 0,2mJ ) E on and E ts include losses due to diode recovery. E ts E on E off E, SWITCHING ENERGY LOSSES 1,0mJ 0,8mJ 0,6mJ 0,4mJ ) E on and E ts include losses due to diode recovery. E ts E off E on 0,0mJ 5A 1 15A 2 25A 0,2mJ 0Ω 20Ω 40Ω 60Ω 80Ω I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, R G = 25Ω, R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, I C = 1, 0,8mJ ) E on and E ts include losses due to diode recovery K/W E, SWITCHING ENERGY LOSSES 0,6mJ 0,4mJ 0,2mJ E ts E off E on ZthJC, TRANSIENT THERMAL IMPEDANCE 10-1 K/W D= K/W single pulse R,(K/W) τ, (s) R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 0,0mJ 0 C 50 C 100 C 150 C 10-3 K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s T j, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V, I C = 1, R G = 25Ω, t p, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = t p / T) 7 Rev. 2.3 July 07

8 25V 1nF C iss 20V VGE, GATE-EMITTER VOLTAGE 15V 10V 5V 120V 480V C, CAPACITANCE 100pF C oss C rss 0V 0nC 25nC 50nC 75nC 10pF 0V 10V 20V 30V Q GE, GATE CHARGE Figure 17. Typical gate charge (I C = 1) V CE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz) 25µ s 20 tsc, SHORT CIRCUIT WITHSTAND TIME 20µ s 15µ s 10µ s 5 µ s 0 µ s 10V 11V 12V 13V 14V 15V IC(sc), SHORT CIRCUIT COLLECTOR CURRENT V 12V 14V 16V 18V 20V V GE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 600V, start at T j = 25 C) V GE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V CE 600V, T j = 150 C) 8 Rev. 2.3 July 07

9 PG-TO Rev. 2.3 July 07

10 PG-TO T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r T C Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ =180nH and Stray capacity C σ =55pF. 10 Rev. 2.3 July 07

11 Edition Published by Infineon Technologies AG München, Germany Infineon Technologies AG 7/11/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.3 July 07

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62. Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology