1200 Gate-emitter voltage V GE ± 2 0 DC collector current A T C = 25 C T C = 80 C I C

Transcription

1 BSM 2 G 12 DN2 IGBT Power Module Single switch Including fast freewheeling diodes Package with insulated metal base plate Type Package Ordering Code BSM 2 G 12 DN2 12V 3 SINGLE SWITCH 1 C BSM 2 G 12 DN2 S 12V 3 SSW SENSE 1 C Maximum Ratings Parameter Symbol Values Unit Collectoremitter voltage 12 V Collectorgate voltage V CGR R GE = 2 k Ω 12 Gateemitter voltage V GE ± 2 DC collector current T C = 25 C T C = 8 C 3 2 Pulsed collector current, t p = 1 ms puls T C = 25 C 6 T C = 8 C 4 Power dissipation per IGBT P tot W T C = 25 C 155 Chip temperature T j + 15 C Storage temperature T stg Thermal resistance, chip case R thjc. 8 K / W Diode thermal resistance, chip case R thjcd. 1 5 Insulation test voltage, t = 1min. V is 25 Vac Creepage distance 2 mm Clearance 11 DIN humidity category, DIN 4 4 F sec IEC climatic category, DIN IEC / 125 / 56 1 Oct271997

2 BSM 2 G 12 DN2 Electrical Characteristics, at T j = 2 5 C, u n l e s s o t h e r w i s e s p e c i f i e d Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V GE =, = 8 m Collectoremitter saturation voltage V GE = 1 5 V, = 2, T j = 2 5 C V GE = 1 5 V, = 2, T j = C Zero gate voltage collector current = 12 V, V GE = V, T j = 2 5 C = 12 V, V GE = V, T j = C Gateemitter leakage current V GE = 2 V, = V C Characteristics Transconductance = 2 V, = 2 Input capacitance = 25 V, V GE = V, f = 1 MHz Output capacitance = 25 V, V GE = V, f = 1 MHz Reverse transfer capacitance = 25 V, V GE = V, f = 1 MHz V GE(th) (sat) ES g fs 18 C iss 13 C oss 2 C rss 1 V m n S nf 2 Oct271997

3 BSM 2 G 12 DN2 Electrical Characteristics, at T j = 2 5 C, u n l e s s o t h e r w i s e s p e c i f i e d Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at T j = 125 C Turnon delay time V CC = 6 V, V GE = 1 5 V, = 2 R Gon = 4.7 Ω Rise time V CC = 6 V, V GE = 1 5 V, = 2 R Gon = 4.7 Ω Turnoff delay time V CC = 6 V, V GE = 1 5 V, = 2 R Goff = 4.7 Ω Fall time V CC = 6 V, V GE = 1 5 V, = 2 R Goff = 4.7 Ω t d(on) t r t d(off) t f ns FreeWheel Diode Diode forward voltage V F V I F = 2, V GE = V, T j = 2 5 C I F = 2, V GE = V, T j = C 1.8 Reverse recovery time t rr µs I F = 2, V R = 6 V, V GE = V di F /dt = 2 /µs, T j = C.5 Reverse recovery charge Q rr µc I F = 2, V R = 6 V, V GE = V di F /dt = 2 /µs T j = 2 5 C 12 T j = C 36 3 Oct271997

4 BSM 2 G 12 DN2 Power dissipation P tot = ƒ( T C ) parameter: T j 15 C Safe operating area = ƒ( ) parameter: D =, T C = 2 5 C, T j 15 C t p = 2 1. µ s W P tot µs ms ms C 16 T C 1 DC V Collector current = ƒ( T C ) parameter: V GE 15 V, T j 15 C Transient thermal impedance IGBT Z th JC = ƒ( t p ) parameter: D = t p / T 32 1 K/W 24 Z thjc D = single pulse C 16 T C s 1 t p 4 Oct271997

5 BSM 2 G 12 DN2 Typ. output characteristics = f ( ) parameter: t p = 8 µs, T j = 25 C Typ. output characteristics = f ( ) parameter: t p = 8 µs, T j = C V 15V 13V 11V 9V 7V V 15V 13V 11V 9V 7V V V 5 Typ. transfer characteristics = f (V GE ) parameter: t p = 8 µs, = 2 V V 14 V GE 5 Oct271997

6 BSM 2 G 12 DN2 Typ. gate charge V GE = ƒ( Q Gate ) parameter: puls = 2 2 Typ. capacitances C = f ( ) parameter: V GE = V, f = 1 MHz 1 2 V GE V 16 C nf 14 6 V 8 V 1 1 Ciss Coss Crss nc 14 Q Gate V 4 Reverse biased safe operating area puls = f( ), T j = 1 5 C parameter: V GE = ± 15 V, t p 1 ms, L < 2 nh Short circuit safe operating area sc = f( ), T j = 1 5 C parameter: V GE = ± 15 V, t SC 1 µs, L < 2 nh puls sc / 1.5 di/dt = 1/µs 3/µs 5/µs 8 di/dt = 1/µs 3/µs 5/µs allowed number of short circuit: <1 time between short circuit: >1s V V 16 6 Oct271997

7 BSM 2 G 12 DN2 Typ. switching time I = f ( ), inductive load, T j = C par.: = 6 V, V GE = ± 15 V, R G = 4.7 Ω 1 4 Typ. switching time t = f (R G ), i n d u c t i v e l o a d, T j = C par.: = 6 V, V GE = ± 15 V, = t ns t ns tdoff tdoff tdon tr 1 2 tdon tr tf 1 2 tf Ω 6 R G Typ. switching losses E = f ( ), inductive load, T j = 125 C par.: = 6 V, V GE = ± 15 V, R G = 4.7 Ω Typ. switching losses E = f (R G ), inductive load, T j = C par.: = 6V, V GE = ± 15 V, = 2 1 mws Eon 1 mws Eon E 8 E Eoff 5 Eoff Ω 6 R G 7 Oct271997

8 BSM 2 G 12 DN2 Forward characteristics of fast recovery reverse diode I F = f(v F ) parameter: T j 4 Transient thermal impedance Diode Z th JC = ƒ( t p ) parameter: D = t p / T 1 K/W I F 3 Z thjc T j =125 C T j =25 C 1 2 D = single pulse V 3. V F s 1 t p 8 Oct271997

9 BSM 2 G 12 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 42 g 9 Oct271997

10 Technische Information / Technical Information IGBTModule IGBTModules nhang CSerie ppendix Cseries BSM2G12DN2 Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module typ. L sce 2 nh Gehäusemaße CSerie Package outline Cseries ppendix Cseries ppendix_cserie_bsm2g12dn2.xls 2192

11 Terms & Conditions of Usage ttention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via / sales & contact. Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via / sales & contact.