ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC

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1 Datasheet ACEPACK 1 converter inverter brake, 12 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 1 ACEPACK 1 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology 16 V, very low drop rectifiers for converter 12 V, 15 A IGBTs and diodes Soft and fast recovery diode Integrated NTC Applications Inverters Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK 1 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 2 khz. Product status A1C15S12M3 Product summary Order code Marking A1C15S12M3 A1C15S12M3 Package ACEPACK 1 Leads type Solder contact pins DS Rev 6 - February 218 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings 1.1 Inverter stage IGBTs Limiting values at T j = C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBTs, inverter stage Symbol Description Value Unit V CES Collector-emitter voltage (V GE = ) 12 V I C Continuous collector current at T c = 1 C 15 A I (1) CP Pulsed collector current (t P = 1 ms) 3 A V GE Gate-emitter voltage ± 2 V P TOT Total power dissipation of each IGBT (T c = C, T J = 175 C) W T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBTs, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage I C = 1 ma, V GE = V 12 V V CE(sat) (terminal) Collector-emitter saturation voltage V GE = 15 V, I C = 15 A V V GE = 15 V, I C = 15 A, T J = 15 C 2.3 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current V GE = V, V CE = 12 V 1 μa I GES Gate-emitter leakage current V CE = V, V GE = ± 2 V ± 5 na C ies Input capacitance 985 pf C oes Output capacitance V CE = V, f = 1 MHz, V GE = V 118 pf C res Reverse transfer capacitance 4 pf Q g Total gate charge V CC = 96 V, I C = 15 A, V GE = ±15 V 71 nc t d(on) Turn-on delay time 12 ns t r Current rise time V CC = 6 V, I C = 15 A, R G = 22 Ω, V GE = ±15 V,di/dt = 82 A/µs 14.5 ns E (1) on Turn-on switching energy.59 mj t d(off) Turn-off delay time 115 ns t f Current fall time V CC = 6 V, I C = 15 A, R G = 22 Ω, V GE = ±15 V,dv/dt = 82 V/µs 84 ns E (2) off Turn-off switching energy.83 mj DS Rev 6 page 2/17

3 Inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time 122 ns t r Current rise time V CC = 6 V, I C = 15 A, R G = 22 Ω, V GE = ±15 V, di/dt = 69 A/µs, T J = 15 C 17 ns E (1) on Turn-on switching energy 1.8 mj t d(off) Turn-off delay time 122 ns t f Current fall time V CC = 6 V, I C = 15 A, R G = 22 Ω, V GE = ±15 V,dv/dt = 7 V/µs, T J = 15 C 146 ns E (2) off Turn-off switching energy 1.6 mj t SC Short-circuit withstand time V CC 6V, V GE 15 V, T jstart 15 C 1 µs R THj-c Thermal resistance junction to case each IGBT C/W R THc-h Thermal resistance case to heatsink each IGBT, λ grease = 1 W/(m C).9 C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current Diode Limiting values at T j = C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode, inverter stage Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 12 V I F Continuous forward current at (T C = 1 C) 15 A I (1) FP Pulsed forward current (t p = 1 ms) 3 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 4. Electrical characteristics of the diode, inverter stage Symbol Parameter Test conditions Min. Typ. Max. Unit V F (terminal) Forward voltage I F = 15 A I F = 15 A, T J = 15 C V t rr Reverse recovery time - 19 ns Q rr Reverse recovery charge I F = 15 A, V R = 6 V, V GE = ±15 V, µc I rrm Reverse recovery current di F /dt = 82 A/μs - 23 A E rec Reverse recovery energy -.55 mj t rr Reverse recovery time - 4 ns Q rr I rrm Reverse recovery charge Reverse recovery current I F = 15 A, V R = 6 V, V GE = ±15 V, di F /dt = 69 A/μs, T J = 15 C µc A E rec Reverse recovery energy mj R THj-c Thermal resistance junction to case Each diode C/W R THc-h Thermal resistance case to heatsink Each diode, λ grease = 1 W/(m C) C/W DS Rev 6 page 3/17

4 Brake stage 1.2 Brake stage IGBT Limiting values at T j = C, unless otherwise specified. Table 5. Absolute maximum ratings of the IGBT, brake stage Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = ) 12 V I C Continuous collector current (T C = 1 C) 15 A I (1) CP Pulsed collector current (t p = 1 ms) 3 A V GE Gate-emitter voltage ±2 V P TOT Total power dissipation of each IGBT (T C = C, T J = 175 C) W T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 6. Electrical characteristics of the IGBT, brake stage Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage I C = 1 ma, V GE = V 12 V V CE(sat) (terminal) Collector-emitter saturation voltage V GE = 15 V, I C = 15 A V GE = 15 V, I C = 15 A, T J = 15 C 2.3 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current V GE = V, V CE = 12 V 1 µa I GES Gate-emitter leakage current V CE = V, V GE = ±2 V ± 5 na C ies Input capacitance 985 pf C oes Output capacitance V CE = V, f = 1 MHz, V GE = V 118 pf C res Reverse transfer capacitance 4 pf Q g Total gate charge V CC = 96 V, I C = 15 A, V GE = ±15 V 71 nc t d(on) Turn-on delay time 12 ns t r Current rise time V CC = 6 V, I C = 15 A, R G = 22 Ω, V GE = ±15 V,di/dt = 82 A/µs 14.5 ns E (1) on Turn-on switching energy.59 mj t d(off) Turn-off delay time 115 ns t f Current fall time V CC = 6 V, I C = 15 A, R G = 22 Ω, V GE = ±15 V,dv/dt = 82 V/µs; 84 ns E (2) off Turn-off switching energy.83 mj t d(on) Turn-on delay time 122 ns V CC = 6 V, I C = 15 A, R G = 22 Ω, t r Current rise time V GE = ±15 V, di/dt = 69 A/µs, T J = 15 C 17 ns E on Turn-on switching energy 1.8 mj DS Rev 6 page 4/17

5 Brake stage Symbol Parameter Test conditions Min. Typ. Max. Unit t d(off) Turn-off delay time 122 ns t f Current fall time V CC = 6 V, I C = 15 A, R G = 22 Ω, V GE = ±15 V, dv/dt = 7 V/µs, T J = 15 C 146 ns E off Turn-off switching energy 1.6 mj t SC Short-circuit withstand time V CC 6 V, V GE 15 V, T Jstart 15 C 1 µs R THj-c Thermal resistance junction to case Each IGBT C/W R THc-h Thermal resistance case to heatsink Each IGBT, λgrease = 1 W/(m C).9 C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current Diode Table 7. Absolute maximum ratings of the diode, brake stage Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 12 V I F Continuous forward current at (T C = 1 C) 15 A I (1) FP Pulsed forward current (t p = 1 ms) 3 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 8. Electrical characteristics of the diode, brake stage Symbol Parameter Test conditions Min. Typ. Max. Unit V F (terminal) Forward voltage I F = 15 A I F = 15 A, T J = 15 C V t rr Reverse recovery time - 19 ns Q rr Reverse recovery charge I F = 15 A, V R = 6 V, V GE = ±15 V, µc I rrm Reverse recovery current di/dt = 82 A/μs - 23 A E rec Reverse recovery energy -.55 mj t rr Reverse recovery time - 4 ns Q rr I rrm Reverse recovery charge Reverse recovery current I F = 15 A, V R = 6 V, V GE = ±15 V, di/dt = 69 A/μs, T J = 15 C µc A E rec Reverse recovery energy mj R THj-c Thermal resistance junction to case Each diode C/W R THc-h Thermal resistance case to heatsink Each diode, λ grease = 1 W/(m C) C/W DS Rev 6 page 5/17

6 Converter stage 1.3 Converter stage Limiting values at T j = C, unless otherwise specified. Table 9. Absolute maximum ratings of the bridge rectifiers Symbol Description Value Unit V RRM Repetitive peak reverse voltage 16 V I F RMS forward current 3 A I Forward surge current t p = 1 ms, T C = C 315 FSM Forward surge current t p = 1 ms, T C = 15 C A I 2 t t p = 1 ms, T C = C 496 t p = 1 ms, T C = 15 C 312 A 2 s T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C Table 1. Electrical characteristics of the bridge rectifiers Symbol Parameter Test conditions Min. Typ. Max. Unit V F (terminal) Forward voltage I F = 15 A I F = 15 A, T J = 15 C -.85 V I R Reverse current T J = 15 C, V R = 16 V - 1 ma R THj-c Thermal resistance junction to case Each diode C/W R THc-h Thermal resistance case to heatsink Each diode, λ grease = 1 W/(m C) C/W 1.4 NTC Table 11. NTC temperature sensor, considered as stand-alone Symbol Parameter Test condition Min. Typ. Max. Unit R Resistance T = C 5 kω R 1 Resistance T = 1 C 493 Ω ΔR/R Deviation of R % B /5 B-constant 3375 K B /8 B-constant 3411 K T Operating temperature range C DS Rev 6 page 6/17

7 Package Figure 3. NTC resistance vs. temperature Figure 4. NTC resistance vs. temperature, zoom R (Ω) GADG NTC R (Ω) GADG NTCZ max 6 min typ T C ( C) T C ( C) 1.5 Package Table 12. ACEPACK 1 package Symbol Parameter Min. Typ. Max. Unit V isol Isolation voltage (AC voltage, t = 6 s) V T stg Storage temperature -4 1 C CTI Comparative tracking index 2 L s Stray inductance module P1 - EW loop 28.7 nh R s Module single lead resistance, terminal to chip 3.9 mω DS Rev 6 page 7/17

8 Electrical characteristics (curves) 2 Electrical characteristics (curves) Figure 5. IGBT output characteristics (V GE = 15 V, terminal) Figure 6. IGBT output characteristics (T J = 15 C, terminal) I C (A) 2 T J = C IGBT OC15 I C (A) 2 IGBT OC15 V GE = 19 V 13 V 17 V 15 V 11 V 15 T J = 15 C V V CE (V) V CE (V) I C (A) Figure 7. IGBT transfer characteristics (V CE = 15 V, terminal) IGBT TCH Figure 8. Switching energy vs. gate resistance E (mj) 7 IGBT SLG V CC = 6 V, V GE = ±15 V, I C = 15 A 6 E on (T J = 15 C) 2 15 V CE = 15 V T J = C T J = 15 C E on (T J = C) 1 2 E off (T J = 15 C) 5 1 E off (T J = C) V GE (V) RG (Ω) DS Rev 6 page 8/17

9 Electrical characteristics (curves) Figure 9. Switching energy vs. collector current E (mj) 2.5 IGBT SLC V CC = 6 V, R G = 22 Ω, V GE = ±15 V E on (T J = 15 C) Figure 1. IGBT reverse biased safe operating area (R BSOA ) I C (A) 3 IGBT FSOA T J = 1 C, V GE = ±15 V, R G = 22 Ω E off (T J = 15 C) 2 15 E off (T J = C).5 E on (T J = C) I C (A) V CE (V) Figure 11. Diode forward characteristics (terminal) I F (A) IGBT DVF Figure 12. Diode reverse recovery energy vs. diode current slope Erec (mj) IGBT Erec T J = 15 C T J = C T J = 15 C T J = C V F (V).2 V CE = 6 V, I F = 15 A, V GE = ±15 V di/dt (A/µs) Figure 13. Diode reverse recovery energy vs. forward current Erec (mj) IGBT RREFC T J = 15 C T J = C.2 V CE = 6 V, R G = 22 Ω, V GE = ±15 V I F (A) Figure 14. Diode reverse recovery energy vs. gate resistance E rec (mj) IGBT RRE T J = 15 C T J = C V CE = 6 V, I F = 15 A, V GE = ±15 V R G (Ω) DS Rev 6 page 9/17

10 Electrical characteristics (curves) Figure 15. Converter diode forward characteristics (terminal) I F (A) IGBT CDFC Figure 16. IGBT thermal impedance Zth( C/W) GADG ZTH Zth(typ.)JH Zth(max.)JC JC RC - Foster thermal network i r i ( C/W) τ i (s) T J = C 5 T J = 15 C V F (V) JH RC - Foster thermal network i r i ( C/W) τ i (s) t (s) Figure 17. Inverter diode thermal impedance Zth( C/W) IGBT DNZTH Zth(typ.)JH Zth(max.)JC 1 JC RC - Foster thermal network i r i ( C/W) τ i (s) JH RC - Foster thermal network i r i ( C/W) τ i (s) t (s) DS Rev 6 page 1/17

11 Test circuits 3 Test circuits Figure 18. Test circuit for inductive load switching Figure 19. Gate charge test circuit C A A k k G L=1 µh + E R G B B G C 3.3 µf E D.U.T 1 µf V CC k k - k k AM15 4v 1 AM155v1 Figure 2. Switching waveform Figure 21. Diode reverse recovery waveform 9% VG 1% 9% VCE Tr(Voff) Tcross 9% 1% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 1% AM156v1 DS Rev 6 page 11/17

12 Topology and pin description 4 Topology and pin description Figure 22. Electrical topology and pin description P P1 G1 G3 G5 L1 L2 L3 T1 GB B U V W G2 G4 G6 T2 N NB EU EV EW Figure 23. Package top view with CIB pinout L1 B L2 L3 P NB G5 P1 GB W G3 V G1 U T1 T2 N G6 EW G4 EV G2 EU GIPD FSR DS Rev 6 page 12/17

13 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS Rev 6 page 13/17

14 ACEPACK 1 CIB solder pins package information 5.1 ACEPACK 1 CIB solder pins package information Figure 24. ACEPACK 1 CIB solder pins package outline (dimensions are in mm) L1 B 22.4 L2 L3 P NB 19.2 G5 W T1 P1 GB N 16. G3 T2 G6 EW 12.8 V G4 EV 9.6 G1 U G2 EU BSC.64±.3 Section B-B 33.8± ± ± ± ±.5 48±.3 41± ±.2 53± ±.5 12± ± REF BSC REF 6.4. B B Detail A 2.5±.2 A A 3.5 REF x45 4.5±.1 GADG SA_ _4 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DS Rev 6 page 14/17

15 Revision history Table 13. Document revision history Date Revision Changes 2-May Initial release. 1-Mar Jul Aug Oct Feb Added Section 2: "Electrical characteristics curves" and Section 3: "Test circuits". Updated Section 5.1: "ACEPACK 1 CIB solder pins package information". Minor text changes. Datasheet promoted from preliminary data to production data. Modified Table 2: "Absolute maximum ratings of the IGBTs, inverter stage", Table 3: "Electrical characteristics of the IGBTs, inverter stage", Table 6: "Absolute maximum ratings of the IGBT, brake stage", Table 7: "Electrical characteristics of the IGBT, brake stage", Table 4: "Absolute maximum ratings of the diode, inverter stage", Table 5: "Electrical characteristics of the diode, inverter stage", Table 1: "Absolute maximum ratings of the bridge rectifiers", Table 11: "Electrical characteristics of the bridge rectifiers", Table 12: "NTC temperature sensor, considered as stand-alone", Table 13: "ACEPACK 1 package". Modified Figure 1: "IGBT thermal impedance" and. Modified Figure 22: "Package top view with CIB pinout". Modified Section 5: "Package information". Minor text changes. Updated Table 3: "Electrical characteristics of the IGBTs, inverter stage", Table 5: "Electrical characteristics of the diode, inverter stage", Table 7: "Electrical characteristics of the IGBT, brake stage", Table 9: "Electrical characteristics of the diode, brake stage", Table 11: "Electrical characteristics of the bridge rectifiers", Section 2: "Electrical characteristics curves". Minor text changes. Updated Table 13: "ACEPACK 1 package", Figure 15: "IGBT thermal impedance" and Figure 16: "Inverter diode thermal impedance". Minor text changes. Updated Figure 16. IGBT thermal impedance and Figure 17. Inverter diode thermal impedance. Removed maturity status indication from cover page. Minor text changes. DS Rev 6 page 15/17

16 Contents Contents 1 Electrical ratings Inverter stage IGBTs Diode Brake stage IGBT Diode Converter stage NTC Package Electrical characteristics (curves) Test circuits Topology and pin description Package information ACEPACK 1 CIB solder pins package information...13 Revision history...15 Contents...16 Disclaimer...17 DS Rev 6 page 16/17

17 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 6 page 17/17

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

Datasheet ACEPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake