STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features

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1 STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters in the secondary stage of MIG/MMA/TIG welding machines. Housed in ST's TO-247, this device offers high power integration for all welding machines and industrial applications. Features TO-247 K A2 A1 Ultrafast switching Low reverse recovery current Reduces switching losses Low thermal resistance ECOPACK 2 compliant component Table 1. Device summary Symbol Value I F(AV) 2 x 3A V RRM 3 V t rr (typ) 2 ns V F (typ) 1.5 V T j (max) 175 C January 215 DocID26582 Rev 1 1/9 This is information on a product in full production. 9

2 Characteristics STTH6SW3C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 3 V I F(RMS) Forward rms current 45 A I F(AV) Average forward current, δ =.5 square waveform T C = 85 C Per diode 3 T C = 75 C Per device 6 A I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 2 A T stg Storage temperature range -65 to +175 C T j Maximum operating junction temperature 175 C Table 3. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case Per diode 1.8 Total 1 R th(c) Coupling.2 C/W When diodes 1 and 2 are used simultaneously: T j(diode1) = P (diode1) x R th(j-c) (per diode) + P (diode2) x R th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C 15 V R = V RRM µa V F (2) Forward voltage drop T j = 25 C 1.55 I F = 3 A T j = 15 C T j = 25 C 1.85 I F = 6 A T j = 15 C V 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.89 x I F(AV) +.12 I F 2 (RMS) 2/9 DocID26582 Rev 1

3 STTH6SW3C Characteristics Table 5. Recovery characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time T j = 25 C I F = 1A, V R = 3 V, di F /dt = -1 A/µs 2 27 ns I RM Reverse recovery current 7 9 A Q rr Reverse recovery charge I F = 3 A,, di F /dt = -2 A/µs 19 nc S factor Softness factor.3 t fr Forward recovery time T j = 25 C I F = 3 A, V FR = 1.6 V, 18 ns V FP Forward recovery voltage di F /dt = +4 A/µs V Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Forward voltage drop versus forward current (typical values, per diode) 1. I(A) F T j = 15 C T j = 25 C Figure 3. Forward voltage drop versus forward current (maximum values, per diode) I(A) F T j = 15 C T j = 25 C V (V) F 1. V F(V) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration Z th(j-c) /R th(j-c) Single pulse.1 t P(s). 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ DocID26582 Rev 1 3/9

4 Characteristics STTH6SW3C Figure 5. Peak reverse recovery current versus di F /dt (typical values, per diode) Figure 6. Reverse recovery time versus di F /dt (typical values, per diode) 16 I RM (A) 1 t RR (ns) Figure 7. Reverse recovery charges versus di F /dt (typical values, per diode) Figure 8. Reverse recovery softness factor versus di F /dt (typical values, per diode) 35 3 Q RR (ns).7.6 S factor Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 1. Transient peak forward voltage versus di F /dt (typical values, per diode) 2. S FACTOR Reference: 5 V FP(V) I F =I F(AV) T j =125 C I RM Q RR T j( C) /9 DocID26582 Rev 1

5 STTH6SW3C Characteristics Figure 11. Forward recovery time versus di F /dt (typical values, per diode) t FR (ns) V FR = 1.6 V Figure 12. Junction capacitance versus reverse voltage applied (typical values, per diode) 1 C(pF) F=1 MHz V OSC = 3 mv RMS T j = 25 C V R(V) DocID26582 Rev 1 5/9

6 Package information STTH6SW3C 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque: TO to 1. N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 13. TO-247 dimension definitions E A Heat-sink plane P S R D L2 L L1 b1 b b c A1 BACK VIEW e 6/9 DocID26582 Rev 1

7 STTH6SW3C Package information Ref. Table 6. TO-247 dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ Max. A A b b b c D (1) E e L L L typ..728 typ. P (2) R S Dimension D plus gate protrusion does not exceed 2.5 mm. 2. Resin thickness around the mounting hole is not less than.9 mm. DocID26582 Rev 1 7/9

8 Ordering information STTH6SW3C 3 Ordering information Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH6SW3CW STTH6SW3CW TO Tube 4 Revision history Table 8. Document revision history Date Revision Changes 13-Jan First release. 8/9 DocID26582 Rev 1

9 STTH6SW3C IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 215 STMicroelectronics All rights reserved DocID26582 Rev 1 9/9

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features STTH1LCD6 Turbo 2 ultrafast - high voltage rectifier for flat panel displays Description Datasheet - production data The STTH1LCD6 uses ST Turbo 2 technology. This device is suited for power applications