STPSC16H065A. 650 V power Schottky silicon carbide rectifier. Datasheet. Features. Applications. Description
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1 Dtsheet 65 V power Schottky silicon crbide rectifier NC A TO-247 K A K NC Fetures No or negligible reverse recovery Temperture independent switching behvior High forwrd surge cpbility Operting T j from -4 C to 175 C Power efficient product ECOPACK 2 complint Applictions DC/DC converter High frequency inverter Boost PFC function Description The SiC diode is n ultrhigh performnce power Schottky diode. It is mnufctured using silicon crbide substrte. The wide bnd gp mteril llows the design of Schottky diode structure with 65 V rting. Due to the Schottky construction, no recovery is shown t turn-off nd ringing ptterns re negligible. The miniml cpcitive turn-off behvior is independent of temperture. Product sttus link Especilly suited for use in PFC pplictions, this ST SiC diode, pckged in TO-247, will boost the performnce in hrd switching conditions. Its high forwrd surge cpbility ensures good robustness during trnsient phses. Product summry I F(AV) V RRM 16 A 65 V T j (mx.) 175 C V F (typ.) 1.56 V Product lbel DS Rev 1 - October 218 For further informtion contct your locl STMicroelectronics sles office.
2 Chrcteristics 1 Chrcteristics Tble 1. Absolute rtings (limiting vlues t 25 C, unless otherwise specified) Symbol Prmeter Vlue Unit V RRM Repetitive pek reverse voltge T j = -4 C to +175 C 65 V I F(RMS) Forwrd rms current 22 A I F(AV) Averge forwrd current T c = 115 C (1), DC current 16 A t p = 1 ms sinusoidl, T c = 25 C 12 I FSM Surge non repetitive forwrd current t p = 1 ms sinusoidl, T c = 125 C 15 A t p = 1 µs squre, T c = 25 C 8 I FRM Repetitive pek forwrd current T c = 115 C (1), T j = 175 C, δ =.1 66 A T stg Storge temperture rnge -55 to +175 C T j Operting junction temperture -4 to +175 C 1. Vlue bsed on R th(j-c) mx. Tble 2. Therml resistnce prmeters Symbol Prmeter Typ. Vlue Mx. Unit R th(j-c) Junction to cse C/W For more informtion, plese refer to the following ppliction note: AN588: Rectifiers therml mngement, hndling nd mounting recommendtions Tble 3. Sttic electricl chrcteristics Symbol Prmeter Test conditions Min. Typ. Mx. Unit I R (1) Reverse lekge current T j = 25 C V R = V RRM T j = 15 C µa V F (2) Forwrd voltge drop T j = 25 C I F = 16 A T j = 15 C V 1. Pulse test: t p = 1 ms, δ < 2% 2. Pulse test: t p = 5 µs, δ < 2% To evlute the conduction losses, use the following eqution: P = 1.35 x I F(AV) +.7 x I 2 F (RMS) For more informtion, plese refer to the following ppliction notes relted to the power losses: AN64: Clcultion of conduction losses in power rectifier AN421: Clcultion of reverse losses on power diode DS Rev 1 pge 2/9
3 Chrcteristics (curves) Tble 4. Dynmic electricl chrcteristics Symbol Prmeter Test conditions Typ. Unit Q Cj (1) Totl cpcitive chrge V R = 4 V 41 nc C j Totl cpcitnce V R = V, T c = 25 C, F = 1 MHz 75 V R = 3 V, T c = 25 C, F = 1 MHz 76 pf 1. Most ccurte vlue for the cpcitive chrge: Q cj V R = V R C j V dv 1.1 Chrcteristics (curves) Figure 1. Forwrd voltge drop versus forwrd current (typicl vlues, low level) Figure 2. Forwrd voltge drop versus forwrd current (typicl vlues, high level) I F (A) Pulse test: tp = 5 µs T = 25 C T = 1 C T = 15 C T = 175 C V (V) F I F (A) 16 Pulse test: tp = 5 µs T = 25 C 8 T = 1 C 6 T = 15 C 4 2 T = 175 C V (V) F Figure 3. Reverse lekge current versus reverse voltge pplied (typicl vlues) Figure 4. Pek forwrd current versus cse temperture I R (µa) 1.E+3 8 I M (A) δ =.1 T 1.E+2 1.E+1 T j = 175 C 6 δ= tp/t tp 1.E+ 1.E-1 T j = 15 C 4 δ =.3 δ =.5 1.E-2 T j = 25 C 1.E-3 V (V) R 1.E δ =.7 T c ( C) δ = DS Rev 1 pge 3/9
4 Chrcteristics (curves) Figure 5. Junction cpcitnce versus reverse voltge pplied (typicl vlues) Figure 6. Reltive vrition of therml impednce junction to cse versus pulse durtion 8 Cj(pF) 1. Z th(j-c) /R th(j-c) F = 1 MHz.9 6 V OSC = 3 mv RMS Tj = 25 C V R (V) Single pulse t p (s). 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Figure 7. Non-repetitive pek surge forwrd current versus pulse durtion (sinusoidl wveform) Figure 8. Totl cpcitive chrges versus reverse voltge pplied (typicl vlues) 1.E+3 I FSM (A) 5 Q Cj (nc) 4 T = 25 C 3 T = 125 C 2 1 t p (s) 1.E+2 1.E-5 1.E-4 1.E-3 1.E-2 V R (V) DS Rev 1 pge 4/9
5 Pckge informtion 2 Pckge informtion In order to meet environmentl requirements, ST offers these devices in different grdes of ECOPACK pckges, depending on their level of environmentl complince. ECOPACK specifictions, grde definitions nd product sttus re vilble t: ECOPACK is n ST trdemrk. 2.1 TO-247 pckge informtion Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque vlue:.8 N m Mximum torque vlue: 1. N m Figure 9. TO-247 pckge outline E A Het-sink plne P S R D L2 L1 L b1 b b c A1 Bck view e DS Rev 1 pge 5/9
6 TO-247 pckge informtion Ref. Tble 5. TO-247 pckge mechnicl dt Millimeters Dimensions Inches (for reference only) Min. Typ. Mx. Min. Typ. Mx. A A b b b c D E e L L L ØP ØR S DS Rev 1 pge 6/9
7 Ordering informtion 3 Ordering informtion Tble 6. Ordering informtion Order code Mrking Pckge Weight Bse qty. Delivery mode W W TO g 3 Tube DS Rev 1 pge 7/9
8 Revision history Tble 7. Document revision history Dte Version Chnges 8-Oct Initil relese. DS Rev 1 pge 8/9
9 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV nd its subsidiries ( ST ) reserve the right to mke chnges, corrections, enhncements, modifictions, nd improvements to ST products nd/or to this document t ny time without notice. Purchsers should obtin the ltest relevnt informtion on ST products before plcing orders. ST products re sold pursunt to ST s terms nd conditions of sle in plce t the time of order cknowledgement. Purchsers re solely responsible for the choice, selection, nd use of ST products nd ST ssumes no libility for ppliction ssistnce or the design of Purchsers products. No license, express or implied, to ny intellectul property right is grnted by ST herein. Resle of ST products with provisions different from the informtion set forth herein shll void ny wrrnty grnted by ST for such product. ST nd the ST logo re trdemrks of ST. All other product or service nmes re the property of their respective owners. Informtion in this document supersedes nd replces informtion previously supplied in ny prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 1 pge 9/9
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K G. Order code 400 V 600 V Min. Max. P0111MA 1AA3 X 4 µa 25 µa TO-92. P0111MN 5AA4 X 4 µa 25 µa SOT-223. P0115DA 5AL3 X 15 µa 50 µa TO-92
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Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER Main product characteristics
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Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
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Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally
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Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and maximum junction temperature, these diodes
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Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC
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Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description Gen-III 6-65 SiC Schottky Diode UJ3D656KS. CSE United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge
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