Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
|
|
- Morris Whitehead
- 6 years ago
- Views:
Transcription
1 Description Gen-III 6-65 SiC Schottky Diode UJ3D656KS. CSE United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. CSE Features Typical pplications 175 maximum operating junction temperature Power converters Easy paralleling Industrial motor drives Extremely fast switching not dependent on temperature Switching-mode power supplies No reverse or forward recovery Power factor correction modules Enhanced surge current capability, MPS structure Excellent thermal performance, g sintered 1% UIS tested EC-Q11 qualified Maximum Ratings i 2 t value DC blocking voltage Repetitive peak reverse voltage, T j =25 Soldering temperatures, wavesoldering only allowed at leads Symbol Surge peak reverse voltage 65 Maximum DC forward current T C = 14 3/6 Non-repetitive forward surge current sine halfwave Repetitive forward surge current sine halfwave, D=.1 Non-repetitive peak forward current Power dissipation Maximum junction temperature Operating and storage temperature R RRM RSM I F I FSM Test Conditions alue (Leg/Device) T C = 25, t p = 1ms 165/33 i 2 T C = 25, t p =1ms 136/544 dt T C = 11, t p =1ms 112/448 T C = /577 P Tot T C = /134.6 T J,max 175 T J, T STG -55 to T C = 11, t p =1ms 15/3 T C = 25, t p = 1ms 17.2/214.4 I FRM T C = 11, t p =1ms 66.1/132.2 I F,max Part Number Package Marking UJ3D656KS TO-247-3L UJ3D656KS T C = 25, t p =1ms 125/25 T C = 11, t p =1ms 125/25 1.6mm from case for T sold 26 1s 2 s W Rev. B, January For more information go to
2 Forward Current, I F () Forward Current, I F () Electrical Characteristics Gen-III 6-65 SiC Schottky Diode UJ3D656KS. T J = +25 unless otherwise specified Forward voltage Min Typ Max /6 37/74-39/78 Q C R =4 72/144 nc Total capacitance C R =1, f=1mhz R =3, f=1mhz R =6, f=1mhz 99/ /234 11/22 pf Capacitance stored energy E C R =4 1.5/21 mj (1) Q c is independent on T j, di F /dt, and I F as shown in the application note USCi_N11. Thermal characteristics Symbol Test Conditions I F = 3/6, T J = 25 I F = 3/6, T J =175 Reverse current I R R =65, T j =25 R =65, T J =175 Total capacitive charge (1) F I F = 3/6, T J =15 alue (Leg/Device) m Thermal resistance alue (Leg/Device) symbol Test Conditions Min Typ Max R qjc.4/.2.52/.26 /W Typical Performance Forward oltage, F () Forward oltage, F () Figure 1 Typical forward characteristics per leg Figure 2 Typical forward characteristics in surge current per leg Rev. B, January For more information go to
3 Forward Current,I F () Max. Thermal Impedance, Z qjc (/W) Reverse Current, I R () Power Disspiation, P Tot (W) Gen-III 6-65 SiC Schottky Diode UJ3D656KS E E E E E Reverse oltage, R () T C () Figure 3 Typical reverse characteristics per leg Figure 4 Power dissipation per leg D =.1 D =.3 D =.5 D =.7 D = D =.5 D =.3 D =.1 D =.5 D =.2 Single Pulse T C ().1 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Time, t (s) Figure 5 Diode forward current per leg Figure 6 Maximum transient thermal impedance per leg Rev. B, January For more information go to
4 E C (mj) Capacitance, C (pf) Q C (nc) Gen-III 6-65 SiC Schottky Diode UJ3D656KS Q C = R C d Reverse oltage, R () Reverse oltage, R () Figure 7 Capacitance per leg vs. reverse voltage at 1MHz Figure 8 Typical capacitive charge per leg vs. reverse voltage Reverse oltage, R () Figure 9 Typical capacitance stored energy per leg vs. reverse voltage Rev. B, January For more information go to
5 Disclaimer Gen-III 6-65 SiC Schottky Diode UJ3D656KS. United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. B, January For more information go to
Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and maximum junction temperature, these diodes
More informationIndustrial motor drives 175 C maximum operating junction temperature
Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally
More informationxr SiC Series... 10A - 650V SiC Schottky with Surge Bypass Diode... UJDS06510T...
Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature
More informationIndustrial motor drives 175 C maximum operating junction temperature
Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally
More informationPart Number UJDS06508T
Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature
More informationOver Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing
More informationIDW10G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode Final Datasheet Rev. 2.1 20170721 Industrial Power Control CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon Carbide No reverse
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More informationSilicon Carbide Schottky Diode IDW30G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode IDW3G12C5B Final Datasheet Rev. 2.1 217721 Industrial Power Control IDW3G12C5B CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon
More informationOver current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
More informationOver current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
More informationOver current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
More informationthinq! SiC Schottky Diode
SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the
More information3 rd Generation thinq! TM SiC Schottky Diode
IDH2SG12 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationSilicon Carbide Schottky Diode IDH05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDH05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control thinq! TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No
More information2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDD4S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature
More informationSilicon Carbide Schottky Diode IDH02G120C5. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDH02G120C5 Final Datasheet Rev. 2.1 20170721 Industrial Power Control CoolSiC TM SiC Schottky Diode IDH02G120C5 Features: Revolutionary semiconductor material Silicon
More informationSilicon Carbide Schottky Diode IDM05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDM05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No reverse
More information3 rd Generation thinq! TM SiC Schottky Diode
IDD4SG6C 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationSiC. Silicon Carbide Diode. 1200V SiC Schottky Diode IDW 1 0 S Rev. 2.0,< >
SiC Silicon Carbide Diode thinq! TM SiC Schottky Diode 12V SiC Schottky Diode IDW 1 S 1 2 Final Datasheet Rev. 2., Power Management & Multimarket thinq! SiC Schottky Diode 1 Description The 12V
More informationGB2X100MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 100 C) = 246 A* Q C = 796 nc* Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW24G65C5B. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2., 215-4-13 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW 1 0 G 6 5 C 5. Rev. 2.0 < >
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode IDW 1 G 6 5 C 5 Final Datasheet Rev. 2. Power Management & Multimarket 5th Generation thinq! SiC Schottky Diode 1 Description
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDY10S120
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.1, 2011-05-25 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 212-12-1 Power Management & Multimarket 5th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationGC2X8MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM I F (Tc = 135 C Q C = 1200 V C) = 40 * = 66 nc* Features High valanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationProduct Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW40G65C5B. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2., 215-4-13 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationGC15MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 135 C) = 40 A Q C = 66 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationIDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
More informationIDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 22-2- Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode Description ThinQ! Generation
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDV05S60C
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.0, 2010-01-08 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More information6 th Generation CoolSiC
6 th Generation CoolSiC 650V SiC Schottky Diode The CoolSiC Generation 6 is the leading edge technology from Infineon for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process
More informationLow VF SMD Schottky Barrier Diode
Low F SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing
More informationGB01SLT V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 160 C) = 1 A Q C = 4 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationOver Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C
Description xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low
More informationC2D20120D Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D212D Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 29 A ** Q c = 122 nc ** Features 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDL04G65C5. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Data Sheet Rev. 2., 213-12-5 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationGAP3SLT33-220FP 3300 V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 3300 V I F (Tc 125 C) = 0.3 A Q C = 3 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationI F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationC3D08065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D865 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 11 Q c = 2 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC3D04065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D5 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 5 V ( =135 C) = Q c = 1 nc Features 5-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward
More informationI F = 10 A, T j = 25 C 1.3 I F = 10 A, T j = 210 C 1.8. V R = 650 V, T j = 25 C 1 5 V R = 650 V, T j = 210 C di F /dt = 200 A/μs
High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 210 C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge
More informationZ-Rec Rectifier. C4D08120A Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications
C4D812 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 11 Q c = 37 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationC4D05120E Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D12E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =13) = 9 Q c = 27 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationcase TO 252 T C = 25 C, t P = 10 ms 18
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationC3D16065D Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D1665D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent
More informationSTPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery
Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C
More informationIDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
More informationcase T C = 25 C, t P = 10 ms 32 A Non-repetitive peak forward current I F,max T C = 25 C, t P = 10 µs 120 A I 2 t value i 2 T C = 25 C, t P = 10 ms 5
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationIDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
More informationC2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D112A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM RM = 12 12 V V ( =135 C) = 1 = 14.5 A A Q c = 61 nc 61 nc Q c Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward
More informationE4D20120A. Silicon Carbide Schottky Diode E-Series Automotive. Features. Package. Benefits. Applications. Maximum Ratings (T C V DS 900 V I D 11.
E4D1A Silicon Carbide Schottky Diode E-Series Automotive V DS I D @ 25 C R DS(on) 9 V 11.5 A 28 mω Features Package 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency
More informationC3D04060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak)
C3DF Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak) Features -Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent
More informationC2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D512A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 8.5 A Q c = 28 nc Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC3D02060E Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D6E Silicon Carbide Schottky Diode Z-Rec Rectifier Features 6-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More information200mA, 30V Schottky Barrier Diode
200mA, 30V Schottky Barrier Diode FEATURES Designed for mounting on small surface Low capacitance Low forward voltage drop Compliant to RoHS directive 20/65/EU and in accordance to WEEE 2002/96/EC Halogen-free
More informationMaximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationC5D05170H Silicon Carbide Schottky Diode Z-Rec Rectifier
C5D517H Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 17 V I F, ( =135 C) = 8.8 A Q c = 69 nc Features Package 1.7kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationSurge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 18 A V F 1.65 V
More informationIDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationBAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode
Small Signal Product mw Surface Mount Schottky Barrier Diode FEATURES - Fast switching speed - Low forward voltage drop - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish
More informationT C = 25 C, t P = 10 ms 2
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of V F Fast switching
More informationSilicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode Features 1200 V Schottky rectifier 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature
More informationFFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.
FFSD8A Silicon Carbide Schottky Diode V, 8 A Features Max Junction Temperature 75 C Avalanche Rated 8 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery
More informationBYW52 / 53 / 54 / 55 / 56
Standard Avalanche Sinterglass Diode BYW52 / 53 / 54 / 55 / 56 Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current
More informationFFSH40120ADN-F155 Silicon Carbide Schottky Diode
FFSH412ADN-F155 Silicon Carbide Schottky Diode 12 V, 4 A Features Max Junction Temperature 175 o C Avalanche Rated 2 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling
More information350mW, SMD Switching Diode
350mW, SMD Switching Diode FEATURES Designed for mounting on small surface Low Capacitance Low forward voltage drop Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free
More informationFFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.
FFSP66A Silicon Carbide Schottky Diode 6 V, 6 A Features Max Junction Temperature 7 o C Avalanche Rated 36 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationSTTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features
STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters
More informationHigh-Voltage Schottky Rectifier
High-Voltage Schottky Rectifier MBR(F,B)090 & MBR(F,B)0 TO-0AC TMBS ITO-0AC FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability
More informationSTTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features
STTH1LCD6 Turbo 2 ultrafast - high voltage rectifier for flat panel displays Description Datasheet - production data The STTH1LCD6 uses ST Turbo 2 technology. This device is suited for power applications
More informationBAT54 / A / C / S Taiwan Semiconductor
230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability
More informationConverter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
More informationSTTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1
STTH61R4TV Ultrafast recovery diode Main product characteristics I F(AV) 2 x 3 A V RRM 4 V T j V F (typ) 15 C.95 V t rr (typ) 24 ns Features and benefits Ultrafast Very low switching losses High frequency
More informationSoft Switching Series I C I F I FSM
Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified
More informationType Package Configuration Marking BAS28 BAS28W
Silicon Switching Diode For highspeed switching applications Electrical insulated diodes Pbfree (RoHS compliant) package ) Qualified according EC Q /W "!,, Type Package Configuration Marking W SOT SOT
More informationFFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.
FFSH151A Silicon Carbide Schottky Diode 1 V, 15 A Features Max Junction Temperature 175 C Avalanche Rated 145 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak
More informationSTTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes
STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high
More informationCoolMOS TM Power Transistor
IPW6R125CP CoolMOS TM Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.125 Ω Q g,typ 53 nc High peak
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationCoolMOS Power Transistor
IPP9R1K2C3 CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationMaximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPP24N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified
More information6 th Generation CoolSiC
6 th Generation CoolSiC 650V SiC Schottky Diode The CoolSiC generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology
More informationPlease note the new package dimensions arccording to PCN A
SPW5N5C3 CoolMOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO-47 Ultra low gate charge Periodic avalanche rated Extreme
More information