6 th Generation CoolSiC
|
|
- Howard Ross
- 5 years ago
- Views:
Transcription
1 6 th Generation CoolSiC 650V SiC Schottky Diode The CoolSiC generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Q c x V F. The CoolSiC Schottky diode V G has been designed to complement our V and V CoolMOS families, meeting the most stringent application requirements in this voltage range. Table 1 Key performance parameters Parameter Value Unit V RRM 650 V Cathode PG-HDSOP-10-1 Q C (V R = 400 V) 14.7 nc E C (V R = 400 V) 2.7 µj I F (T C 0 C, D = 1) 10 A V F (I F = 10 A, T = 25 C) 1.25 V Table 2 Package information Type / ordering Code Package Marking PG-HDSOP-10-1 D1065C6 Pin 6-10 Pin 3-5 Pin 1-2: n.c. Pin 3-5: Anode Pin 6-10: Cathode Features Best in class forward voltage (1.25 V) Best in class figure of merit (Q c x V F) High dv/dt ruggedness (150 V/ns) Benefits System efficiency improvement System cost and size savings due to the reduced cooling requirements Enabling higher frequency and increased power density Potential Applications Power factor correction in SMPS Solar inverter Uninterruptible power supply Product Validation Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) Final Datasheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0,
2 Table of Content 1 Maximum ratings Thermal characteristics Electrical characteristics Static characteristics AC characteristics Diagrams Simplified forward characteristic Package outlines... 8 Final Datasheet 2 Rev. 2.0,
3 1 Maximum ratings Table 3 Parameter Maximum ratings Continuous forward current Surge-repetitive forward current, sine halfwave 1 Surge non-repetitive forward current, sine halfwave Non-repetitive peak forward current i²t value Symbol I F Values Min. Typ. Max. 10 Unit Note/Test condition T C 150 C, D = 1 15 T C 125 C, D = 1 29 T C C, D = 1 I F,RM 44 T C = 25 C, t p = 10 ms A I F,SM 55 T C = 25 C, t p = 10 ms 44 T C = 150 C, t p = 10 ms I F,max 600 T C = 25 C, t p = 10 µs i²dt 15 T C = 25 C, t p = 10 ms A²s 10 T C = 150 C, t p = 10 ms Repetitive peak reverse voltage V RRM 650 V T C = 25 C Diode dv/dt ruggedness dv/dt 150 V/ns V R = V Power dissipation P tot 105 W T C = 25 C, R thjc,max Operating and storage temperature T T stg C 2 Thermal characteristics Table 4 Parameter Thermal characteristics Thermal resistance, unctioncase Thermal resistance, unctionambient Thermal resistance, unctionambient for SMD version Symbol Values Min. Typ. Max. R thjc R thja 62 R thja Soldering temperature T sold 260 C Unit K/W Note/Test condition Device on PCB, minimal footprint Device on 40*40*1.5 mm epoxy PCB FR4 (one layer, 70 µm thickness) with 6 cm 2 copper for cathode connection and cooling, PCB vertically placed without air stream cooling Allowed only reflow soldering 1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period). Final Datasheet 3 Rev. 2.0,
4 3 Electrical characteristics 3.1 Static characteristics Table 5 Parameter Static characteristics Symbol Values Min. Typ. Max. DC blocking voltage V DC 650 Diode forward voltage Reverse current V F I R Unit Note/Test condition T = 25 C V I F = 10 A, T = 25 C 1.5 I F = 10 A, T = 150 C V R = 420 V, T = 25 C 33 µa V R = 420 V, T = 125 C 77 V R = 420 V, T = 150 C 3.2 AC characteristics Table 6 AC characteristics Parameter Symbol Values Min. Typ. Max. Unit Total capacitive charge Q c 14.7 nc 495 Total capacitance C 29 pf 28 Note/Test Condition V R = 400 V, T = 150 C, di/dt = 200 A/µs, I F I F,MAX V R = 1 V, f = 1 MHz, T = 25 C V R = 300 V, f = 1 MHz, T = 25 C V R = 600 V, f = 1 MHz, T = 25 C Final Datasheet 4 Rev. 2.0,
5 4 Diagrams P tot = f(t C ) I F = f(t C ); R thjc,max ; T 175 C; parameter: D = t P/T Figure 1 Power dissipation Figure 2 Max. forward current I F = f(v F); t p = 10 µs; parameter: T I F = f(v F); t p = 10 µs; parameter: T Figure 3 Typ. forward characteristics Figure 4 Typ. forward characteristics in surge current Final Datasheet 5 Rev. 2.0,
6 0 Q C = f(di F/dt); T = 150 C; V R = 400 V; I F I F,max I R = f(v R); parameter: T Figure 5 Typ. cap. charge vs. current slope Figure 6 Typ. reverse current vs. reverse voltage Figure 7 Z th,c = f(t P); parameter: D = t P/T Max. transient thermal impedance Figure 8 C = f(v R); T = 25 C; f = 1 MHz Typ. capacitance vs. reverse voltage Final Datasheet 6 Rev. 2.0,
7 Figure 9 E C = f(v R) Typ. capacitance stored energy 5 Simplified forward characteristic V F V TH R DIFF I F Treshold voltage (V TH): V T T TH V TH DIFF Differential resistance (R DIFF): R DIFF 2 T A T B T C A B C V F = f(i F) T [ C]; -55 C T 175 C; I F A Figure 10 Equivalent forward current curve Figure 11 Mathematical Equation Final Datasheet 7 Rev. 2.0,
8 6 Package outlines Figure 12 Outlines of the package PG-HDSOP-10-1, dimensions in milimeters Final Datasheet 8 Rev. 2.0,
9 6 th GenerationCoolSiCª RevisionHistory Revision: ,Rev.2.0 Previous Revision Revision Date Subects (maor changes since last revision) Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,
6 th Generation CoolSiC
6 th Generation CoolSiC 650V SiC Schottky Diode The CoolSiC Generation 6 is the leading edge technology from Infineon for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.9 Ω Q g,typ 31 nc Qualified
More informationProduct Summary V DS V. R DS(on),max V GS =10 V mw I D A. Parameter Symbol Conditions Value Unit T C =70 C, V GS =4.
BSG811ND Power Block Features Dual asymmetric N-channel OptiMOS 5 MOSFET Logic level (4.5V rated) Optimized for high performance buck converters Qualified according to JEDEC 1) for target applications
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO 263) 4.2 mw I D 1 A
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDL04G65C5. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Data Sheet Rev. 2., 213-12-5 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationProduct Summary V DS V. R DS(on),max V GS =10 V mw I D A. Parameter Symbol Conditions Value Unit T C =70 C, V GS =4.
BSG81NDI Power Block Features Dual asymmetric N-channel OptiMOS 5 MOSFET Logic level (4.5V rated) Pb-free lead plating; RoHS compliant Optimized for high performance Buck converter Product Summary Q1 V
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 212-12-1 Power Management & Multimarket 5th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW24G65C5B. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2., 215-4-13 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW 1 0 G 6 5 C 5. Rev. 2.0 < >
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode IDW 1 G 6 5 C 5 Final Datasheet Rev. 2. Power Management & Multimarket 5th Generation thinq! SiC Schottky Diode 1 Description
More informationPower Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 22-2- Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode Description ThinQ! Generation
More informationOptiMOS Small-Signal-Transistor,100V
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS Small-Signal-Transistor,V BSL96SN DataSheet Rev.. Final Industrial&Multimarket OptiMOS Small-Signal-Transistor Features N-channel Enhancement
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW40G65C5B. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2., 215-4-13 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
More information3 rd Generation thinq! TM SiC Schottky Diode
IDD4SG6C 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationBSP316P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated
BSP36P SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IE C649 Gate pin Product Summary V DS - V R DS(on).8
More informationBSS87. SIPMOS Small-Signal-Transistor. Rev Product Summary V DS 240 V R DS(on) 6 I D 0.26 A
Rev.. SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode, Logic Level dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to EC Q Halogen free according to IE C649 Product
More informationSilicon Carbide Schottky Diode IDM05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDM05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No reverse
More informationSPA A 17 1) 11 1) Pulsed drain current, t p limited by T jmax I D puls A Avalanche energy, single pulse. E AS mj E AR
SPP7N8C3 SP7N8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).9 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO I D 7 Ultra low gate charge PGTO33 PGTO Periodic avalanche
More information2 nd Generation thinq! TM SiC Schottky Diode
IDD4S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature
More information2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More informationSilicon Carbide Schottky Diode IDW30G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode IDW3G12C5B Final Datasheet Rev. 2.1 217721 Industrial Power Control IDW3G12C5B CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon
More informationSiC. Silicon Carbide Diode. 1200V SiC Schottky Diode IDW 1 0 S Rev. 2.0,< >
SiC Silicon Carbide Diode thinq! TM SiC Schottky Diode 12V SiC Schottky Diode IDW 1 S 1 2 Final Datasheet Rev. 2., Power Management & Multimarket thinq! SiC Schottky Diode 1 Description The 12V
More informationIDW10G120C5B. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Silicon Carbide Schottky Diode Final Datasheet Rev. 2.1 20170721 Industrial Power Control CoolSiC TM SiC Schottky Diode Features: 1 2 CASE Revolutionary semiconductor material Silicon Carbide No reverse
More informationSilicon Carbide Schottky Diode IDH02G120C5. 5 th Generation CoolSiC 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDH02G120C5 Final Datasheet Rev. 2.1 20170721 Industrial Power Control CoolSiC TM SiC Schottky Diode IDH02G120C5 Features: Revolutionary semiconductor material Silicon
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More informationMaximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. E AS 150 mj. P tot 1.
SIPMOS SmallSignalTransistor Feature PChannel Enhancement mode valanche rated dv/dt rated Ideal for fast switching buck converter Qualified according to EC Q Halogen free according to IE C69 Gate pin Drain
More informationSilicon Carbide Schottky Diode IDH05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDH05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control thinq! TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No
More informationProduct Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A. I D puls -0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
More informationPG-TO220FP PG-TO262 P-TO ) 4.6 1) Pulsed drain current, t p limited by T jmax I D puls A Avalanche energy, single pulse
SPP7N6C3 SPI7N6C3, SP7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current
More information3 rd Generation thinq! TM SiC Schottky Diode
IDH2SG12 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationCoolMOS Power Transistor
IPA6R85CP CoolMOS Power Transistor Features V)DL:HI;>I/ HG M. @ V2AIG6ADL
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDV05S60C
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.0, 2010-01-08 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationSiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDY10S120
SiC Silicon Carbide Diode 2nd Generation thinq! 2nd Generation thinq! SiC Schottky Diode Data Sheet Rev. 2.1, 2011-05-25 Final Industrial & Multimarket 1 Description The second generation of Infineon SiC
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
More informationIDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
More informationSurge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 18 A V F 1.65 V
More informationthinq! SiC Schottky Diode
SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the
More informationIDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
More informationProduct Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
More informationIDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak
More informationCoolMOS Power Transistor
IPP9R1K2C3 CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationIDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
More informationMaximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationCoolMOS TM Power Transistor
IPW6R125CP CoolMOS TM Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.125 Ω Q g,typ 53 nc High peak
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability
More informationIDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features Worldwide best R DS,on in TO22 Lowest figure of merit R ON x Q g Ultra low gate charge Product Summary V DS @T jmax 55 V R DS(on),max.14 Ω Q g,typ 48 nc Extreme dv/dt
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features Lowest figure of merit R ON x Q g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @T jmax 55 V R DS(on),max.52 Ω Q g,typ 13 nc High peak current capability
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.29 Ω Q g,typ 88 nc Qualified
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these
More informationGB2X100MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 100 C) = 246 A* Q C = 796 nc* Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationOptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and maximum junction temperature, these diodes
More informationCoolMOS TM Power Transistor
SPP15N6CFD CoolMOS TM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Product
More informationOptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationOptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
More informationGC15MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 135 C) = 40 A Q C = 66 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
More informationOptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
More informationPower converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature
Description Gen-III 6-65 SiC Schottky Diode UJ3D656KS. CSE United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge
More informationOptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More informationOptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
More informationnot recommended for new designs
CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability
More informationOptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationOptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationOptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
More informationOptiMOS TM Power-Transistor
Type BSC14N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target
More informationcase TO 252 T C = 25 C, t P = 10 ms 18
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
More informationOptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
More informationSPN03N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT-
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS -T Power-Transistor
IPB35N2S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 2 V R DS(on),max 26.3 mw Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode I D 35 A PG-TO263-3-2 Tab
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationOptiMOS -T2 Power-Transistor
IPB2N8S4-3 OptiMOS -T2 Power-Transistor Product Summary V DS 8 V R DS(on),max (SMD version) 2.5 mw Features N-channel - Enhancement mode AEC Q qualified I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- MSL
More informationOptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 1 V R DS(on),max 26 mw Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 35 A PG-TO252-3-11 MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationOptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationOptiMOS TM P3 Power-Transistor
BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
More informationDual N-Channel OptiMOS MOSFET
Dual N-Channel OptiMOS MOSFET Features Dual N-channel OptiMOS MOSFET Optimized for high performance Buck converter Logic level (4.5V rated) 1% avalanche tested Qualified according to JEDEC 1) for target
More informationOptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
More informationOptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
More informationOptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationOptiMOS 3 M-Series Power-MOSFET
BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R
More information