IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C
|
|
- Lindsey Sparks
- 6 years ago
- Views:
Transcription
1 Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C Type Package Ordering Code IDB30E60 PG-TO Marking D30E60 Pin 1 PIN 2 PIN 3 NC C A Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak peak reverse reverse voltage voltage V RRM V R R M V V Continuous Continous forward current current I F A T C = =25 C 25 C I F A T C = =90 C 90 C Surge non repetitive forward current Surge non repetitive forward current I FSM I F S M A T C = 25 C, t p = ms, sine halfwave T C =25 C, t p = ms, sine halfwave Maximum repetitive forward current Maximum repetitive forward current I FRM I F R M A T C = 25 C, t p limited by t j,max, D = 0.5 T C =25 C, t p limited by T jmax, D=0.5 Power dissipation TPower C = 25 C dissipation P tot P t o t W T C = =25 C 90 C Operating T C =90 C junction temperature T j Storage Operating temperature and storage temperature T j, T s t g stg C C Soldering temperature T S T 260 C 1.6mm reflow soldering, (0.063 in.) MSL1 from case for s S 260 Rev.2.4 Page 1
2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient, leaded R thja SMD version, device on min. footprint R thja cm 2 cooling area 1) Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I R µa V R =600V, T j =25 C V R =600V, T j =150 C Forward voltage drop I F =, T j =25 C I F =, T j =150 C V F V Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Page 2
3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time t rr ns V R =400V, I F =, di F /dt=00a/µs, T j =25 C V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C Peak reverse current V R =400V, I F =, di F /dt=00a/µs, T j =25 C V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C Reverse recovery charge V R =400V, I F =, di F /dt=00a/µs, T j =25 C V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C Reverse recovery softness factor V R =400V, I F =, di F /dt=00a/µs, T j =25 C V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C A nc S Rev.2.4 Page 3
4 1 Power dissipation P tot = f (T C ) parameter: T j 175 C W Diode forward current I F = f(t C ) parameter: T j 175 C 55 A Ptot IF C C 175 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) 90 2 A V IF C 25 C 0 C 150 C VF V 2.5 V F Rev.2.4 Page C 160 T j
5 5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 400V, T j = 125 C 500 ns 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 400V, T j = 125 C 2600 nc trr 350 Qrr A/µs 00 di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 400V, T j = 125 C 26 A A/µs 00 di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 400V, T j = 125 C Irr S A/µs 00 di F /dt Rev.2.4 Page A/µs 00 di F /dt
6 9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W IDP30E60 0 ZthJC D = single pulse s 0 t p Rev.2.4 Page 6
7 Rev.2.4 Page
8 Published by Infineon Technologies AG, München 2009 Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8
Surge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 18 A V F 1.65 V
More informationIDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
More informationMaximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationIDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
More informationIDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
More informationProduct Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
More informationIDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
More informationthinq! SiC Schottky Diode
SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the
More informationSPB03N60S5. Cool MOS Power Transistor V DS 600 V
SPB3N6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
More information2 nd Generation thinq! TM SiC Schottky Diode
IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDD4S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature
More information3 rd Generation thinq! TM SiC Schottky Diode
IDD4SG6C 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationSPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
More informationSPN03N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT-
More informationCool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data P-TO5 SPUNS5
More informationOptiMOS =Power-Transistor
SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source
More informationCool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data SPI7N6S5
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 5.
Cool MOS =Power Transistor =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Optimized capacitances =Improved noise immunity =Former development
More informationBSO604NS2 OptiMOS Power-Transistor
BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package
More informationOptiMOS -P Small-Signal-Transistor
SPD5P3L OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS -3 V R DS(on),max 7 mω I D -5 A 175 C operating temperature Avalanche rated dv /dt rated
More informationPreliminary data. Type Package Ordering Code Tape and Reel Information BSP 317 P SOT-223 Q67042-S4167 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -5 V R DS(on) 4 Ω I D -.43 Drain pin /4 Source pin 3 SOT-3 4 3 VPS563 Type Package
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS
More informationOptiMOS Power-Transistor
OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationOptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
More informationOptiMOS -T2 Power-Transistor
IPB2N8S4-3 OptiMOS -T2 Power-Transistor Product Summary V DS 8 V R DS(on),max (SMD version) 2.5 mw Features N-channel - Enhancement mode AEC Q qualified I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- MSL
More informationPreliminary data P-TO Marking 11N60C3 11N60C3 11N60C3 11N60C3 Maximum Ratings Parameter Symbol Value Unit
SPPN6C3, SPBN6C3 SPIN6C3, SPAN6C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (. V rated) C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 7 mω I D -. SOT-
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
More informationOptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS -4 V R DS(on) (SMD Version) 3.1 mw Features P-channel - Logic Level - Enhancement mode I D -12 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1 MSL1
More informationMaximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls E AS. P tot 0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
More informationSIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SPB8P6P SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).23
More informationOptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on),max 1.5 mω I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
More informationPreliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on) 8 Ω Continuous
More informationMaximum Ratings, at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current E AS. P tot 0.36 W
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Type Package Tape and Reel Marking 1
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
More informationSPP20N60C3, SPB20N60C3 SPA20N60C3. Cool MOS Power Transistor. Preliminary data
SPP2N6C3, SPB2N6C3 SPA2N6C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated
More informationOptiMOS -T Power-Transistor
IPB35N2S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 2 V R DS(on),max 26.3 mw Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode I D 35 A PG-TO263-3-2 Tab
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More information2 nd Generation thinq! TM SiC Schottky Diode
IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary
More informationSPB07N60C3. Cool MOS Power Transistor V T jmax 650 V. Operating and storage temperature T j, T stg C 6) Feature
SPB7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current
More informationOptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 1 V R DS(on),max 26 mw Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 35 A PG-TO252-3-11 MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.3 mω Features N-channel - Enhancement mode AEC qualified I D 5 A PG-TO252-3-33 MSL up to 26 C peak reflow 75 C operating temperature
More informationOptiMOS -P2 Power-Transistor Product Summary
IPB8P3P4L-4 OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) (SMD Version) 4.1 mω Features P-channel - Logic Level - Enhancement mode I D -8 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
More informationSPD50N03S2-07 OptiMOS Power-Transistor
OptiMOS PowerTransistor Feature NChannel Enhancement mode Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175 C operating temperature valanche rated dv/dt rated Product Summary
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max (SMD version).8 mω Features N-channel - Enhancement mode I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- AEC qualified MSL up to 26 C peak
More informationOptiMOS -5 Power-Transistor
IPCN4S5L-R9 OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max.9 mw Features OptiMOS - power MOSFET for automotive applications I D A PG-TDSON-8-34 N-channel - Enhancement mode - Logic Level
More informationSPD30N08S2-22 OptiMOS Power-Transistor
SPD3N8S222 OptiMOS PowerTransistor Feature NChannel Enhancement mode 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 75 V R DS(on) 21.5 mω 3 P TO252 311 Type Package Ordering
More informationSilicon Carbide Schottky Diode IDM05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev
Diode Silicon Carbide Schottky Diode IDM05G120C5 Final Datasheet Rev. 2.0 20150828 Industrial Power Control SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide No reverse
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
More informationSPD30N06S2L-13 OptiMOS Power-Transistor
SPD3N6S2L13 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 13 mω 3 P TO252 311 Type Package
More informationSPP20N60S5. Cool MOS Power Transistor V DS 600 V
SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max 9. mω Features N-channel - Enhancement mode I D 5 A PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating temperature
More informationOptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) 4.5 mω Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow I D -9 A PG-TO252-3-11 175 C operating
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
More informationOptiMOS Power-Transistor
IPB8N6S2L-11 IPP8N6S2L-11, IPI8N6S2L-11 OptiMOS Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow Product Summary V DS 55 V R DS(on),max
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS(on),max (SMD version) 3. mω Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 1 A PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max mw Features OptiMOS - power MOSFET for automotive applications I D A PG-HSOF-5 N-channel - Enhancement mode - Normal Level AEC Q qualified
More informationSPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor
SPP8N6S2L7 SPB8N6S2L7 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 7 mω 8 P TO263 32 P
More informationSIPMOS Power-Transistor
SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
More informationSIPMOS Small-Signal-Transistor
Type SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic level BSS131 Product Summary V DS 24 V R DS(on),max 14 Ω I D.1 A dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23
More informationSiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDL04G65C5. Rev. 2.0,
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Data Sheet Rev. 2., 213-12-5 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
More informationOptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS(on),max 5) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175
More informationProduct Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
More informationBSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.
BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking
More informationSKP10N60 SKB10N60, SKW10N60
Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationI C P tot 138 W
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation C Short circuit withstand time 10 µs Designed for operation above 30 khz G E NPT-Technology for 600V applications offers:
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4) 7.2 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-1 MSL1 up to 26 C peak reflow 175
More informationFinal data P-TO Maximum Ratings Parameter Symbol Value Unit I D
SPP7N8C3, SPB7N8C3 SP7N8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).9 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO I D 7 Ultra low gate charge Periodic avalanche
More information3 rd Generation thinq! TM SiC Schottky Diode
IDH2SG12 3 rd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery / No forward recovery Temperature
More informationOptiMOS =Power-Transistor
SPI8N8S7 SPP8N8S7,SPB8N8S7 OptiMOS =PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated Product Summary V DS 75 V R DS(on) max. SMD version 7. m I D 8 P TO6 3 P
More informationRev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape
More informationRev Type Package RoHS compliant Tape and Reel Information BSP125 P-SOT-223 No
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant available Product Summary V DS 6 V R DS(on) 45 Ω.12 PGSOT223 Type Package RoHS compliant
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
More informationMaximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) I D. I D puls 320.
SPP8N6S5 SPB8N6S5 OptiMOS PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) max. SMD version.8 m I D 8 P TO63 3
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
More informationOptiMOS Power-Transistor
OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
More informationMaximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.
IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationFinal data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated
More informationOptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS V R DS(on).5 m Features N-channel - Enhancement mode AEC qualified MSL up to 26 C peak reflow 75 C operating temperature I D 3 A P/G-HSOF-8- Tab 8 Tab Green
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationFinal data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package
More informationPreliminary data. Continuous drain current I D 3-2 A
reliminary data SIMOS SmallSignalTransistor Features Dual and Channel Enhancement mode valanche rated dv/dt rated roduct Summary Drain source voltage DS 6 6 DrainSource onstate R DS(on).. Ω resistance
More informationOptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationPreliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package
More informationRev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information
More informationMaximum Ratings Parameter Symbol Value Unit SPP Continuous drain current
SPPN8C SPN8C Cool MOS Power Transistor V DS 8 V Feature R DS(on). Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS -3 Small-Signal-Transistor
BSLSN OptiMOS - Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.V rated) Avalanche rated Product Summary V DS V R DS(on),max V GS = V mw V GS =. V 9 I D. A Qualified according
More information