Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. E AS 150 mj. P tot 1.
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1 SIPMOS SmallSignalTransistor Feature PChannel Enhancement mode valanche rated dv/dt rated Ideal for fast switching buck converter Qualified according to EC Q Halogen free according to IE C69 Gate pin Drain pin, Source pin 3 Product Summary V DS 6 V R DS(on).3 Ω I D.9 PGSOT3 Type Package Tape and reel BSP63P PGSOT3 H637: pcs/r. Packaging Non D r y Marking B S P 63 P Maximum Ratings, at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =5 C T =7 C Pulsed drain current T =5 C valanche energy, single pulse I D =.9, V DD =5V, R GS =5Ω I D.9.3 I D puls.6 E S 5 mj valanche energy, periodic limited by T jmax E R.8 Reverse diode dv/dt dv/dt 6 kv/µs I S =.9, V DS =8V, di/dt=/µs, T jmax =5 C Gate source voltage V GS ± V Power dissipation T =5 C P tot.8 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68 55/5/56 ESD Class JESDHBM Class c Rev..8 Page 653
2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction soldering point R thjs 9 K/W (Pin ) Thermal resistance, junction ambient, leaded R thj SMD version, device on PCB: R min. 6 cm cooling area ) 7 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drainsource breakdown voltage V (BR)DSS 6 V V GS =, I D =5µ Gate threshold voltage, V GS = V DS V GS(th). 3 I D =m Zero gate voltage drain current I DSS µ V DS =6V, V GS =, T j =5 C V DS =6V, V GS =, T j =5 C. Gatesource leakage current I GSS n V GS =V, V DS = Drainsource onstate resistance V GS =V, I D =.9 R DS(on)..3 Ω Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev..8 Page 653
3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS * I D *R DS(on)max,.7 5. S I D =.9 Input capacitance C iss V GS =, V DS =5V, pf Output capacitance C oss f=mhz 3 95 Reverse transfer capacitance C rss 9 Turnon delay time t d(on) V DD =3V, V GS =V, ns Rise time t r I D =.9, R G =.7Ω 9 8 Turnoff delay time t d(off) 6 5 Fall time t f 7 9 Gate Charge Characteristics Gate to source charge Q gs V DD =8V, I D = nc Gate to drain charge Q gd Gate charge total Q g V DD =8V, I D =.9, V GS = to V 33 Gate plateau voltage V (plateau) V DD =8V, I D = V Reverse Diode Inverse diode continuous forward current I S T =5 C.9 Inv. diode direct current, pulsed I SM.6 Inverse diode forward voltage V SD V GS =V, I F = I S.8. V Reverse recovery time t rr V R =3V, I F = I S, ns Reverse recovery charge Q rr di F /dt=/µs 59.8 nc Rev..8 Page 3 653
4 Power Dissipation P tot = f (T ).9 W.6. Drain current I D = f (T ) parameter: V GS V 3.. P tot. ID C 6 T 6 8 C 6 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 5 C ID R DS(on) = V DS / I D t p =. ms Transient thermal impedance Z thjc = f(t p ) parameter: D = t p / T ZthJC K/W ms D =.5. DC 3 single pulse..5.. V V DS Rev..8 Page s t p 653
5 5 Typ. output characteristic I D = f (V DS ) parameter: T j =5 C 6 Typ. drainsource on resistance R DS(on) = f (I D ) parameter: V GS ; T j = 5 C 7 6 Vgs = 5V.5 Ω I D Vgs = V Vgs = 6V Vgs =.5V RDS(on). Vgs = V.35.3 Vgs =,5V Vgs = 5V.5 Vgs = V.5 Vgs = 6V.5. Vgs = V.5 Vgs=3.5V V 5 VDS 7 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: T j = 5 C I D 8 Typ. forward transconductance g fs = f(i D ) parameter: T j = 5 C S ID 5 gfs V 7 V GS I D Rev..8 Page 5 653
6 9 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D =.9, V GS = V.3 W Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = m 5. V.8. 98% RDS(on).. VGS(th) typ.6. 98% typ.5..5 % C 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz T j. 6 6 C 8 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs pf C 3 C iss IF C oss C rss T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) V V DS Rev..8 Page V 3. V SD 653
7 3 Typ. avalanche energy E S = f (T j ) par.: I D =.9, V DD = 5 V, R GS = 5 Ω 6 mj Typ. gate charge V GS = f (Q G ), parameter: V DS ; T j = 5 C I D =.9 pulsed; 6 V E S V GS. V DS max V DS max ºC 65 T j nc 3 Q G 5 Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 V V(BR)DSS C 8 T j Rev..8 Page 7 653
8 Package Outline SOT3 Footprint Soldering type: Reflow soldering Soldering type: Wave soldering Tape and Reel Dimensions in mm Rev..8 Page 8 653
9 6VSIPMOSSmallSignalTransistor BSP63P RevisionHistory BSP63P Revision:663,Rev..8 Previous Revision Revision Date Subjects (major changes since last revision) Insert package outlines TrademarksofInfineonTechnologiesG URIX,C66,CanPK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSVE,DVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUL,EconoPCK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPCK,Infineon, ISOFCE,IsoPCK,iWafer,MIPQ,ModSTCK,myd,NovalithIC,OmniTune,OPTIG,OptiMOS,ORIG,POWERCODE, PRIMRION,PrimePCK,PrimeSTCK,PROFET,PROSIL,RSIC,REL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLSH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. Trademarksupdatedugust5 OtherTrademarks llreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments nyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesG 876München,Germany 6InfineonTechnologiesG llrightsreserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev..8,663
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Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25
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More informationFinal data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
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