Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

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1 SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance PGTO5 PGTO5 Type Package Ordering Code SPUN6S5 PGTO5 Q67S7 SPDN6S5 PGTO5 Q67S87 Marking N6S5 N6S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current I D A T C = 5 C T C = C. Pulsed drain current, t p limited by T jmax I D puls 5.7 Avalanche energy, single pulse I D =. A, V DD = 5 V E AS mj Avalanche energy, repetitive t AR limited by T ) jmax E AR. I D =. A, V DD = 5 V Avalanche current, repetitive t AR limited by T jmax I AR. A Gate source voltage V GS ± V Gate source voltage AC (f >Hz) V GS ± Power dissipation, T C = 5 C P tot 8 W Operating and storage temperature T j, T stg C Rev..5 Page 87

2 SPUN6S5 SPDN6S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt V/ns V DS = 8 V, I D =. A, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction case R thjc. K/W Thermal resistance, junction ambient, leaded R thja 75 SMD version, device on PCB: R min. 6 cm cooling area ) 75 5 Soldering temperature, *).6 mm (.6 in.) from case for s T sold 6 C Electrical Characteristics, at Tj=5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drainsource breakdown voltage V (BR)DSS V GS =V, I D =.5mA 6 V DrainSource avalanche V (BR)DS V GS =V, I D =.A 7 breakdown voltage Gate threshold voltage V GS(th) I D =5µΑ, V GS =V DS Zero gate voltage drain current I DSS V DS =6V, V GS =V, µa T j =5 C, T j =5 C.5 7 Gatesource leakage current I GSS V GS =V, V DS =V na Drainsource onstate resistance R DS(on) V GS =V, I D =A, T j =5 C T j =5 C.6.. Ω *) TO5: reflow soldering, MSL; TO5: wavesoldering Rev..5 Page 87

3 Electrical Characteristics, at T j = 5 C, unless otherwise specified SPUN6S5 SPDN6S5 Parameter Symbol Conditions Values Unit Characteristics Transconductance g fs V DS *I D *R DS(on)max, I D =A Input capacitance C iss V GS =V, V DS =5V, min. typ. max..8 S pf Output capacitance C oss f=mhz 5 Reverse transfer capacitance C rss.6 Turnon delay time t d(on) V DD =5V, V GS =/V, 5 ns Rise time t r I D =.A, R G =Ω 5 Turnoff delay time t d(off) Fall time t f 5.5 Gate Charge Characteristics Gate to source charge Q gs V DD =5V, I D =.A.5 nc Gate to drain charge Q gd 7 Gate charge total Q g V DD =5V, I D =.A,. 6 V GS = to V Gate plateau voltage V (plateau) V DD =5V, I D =.A 8 V Repetitve avalanche causes additional power losses that can be calculated as PAV =E AR *f. Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev..5 Page 87

4 SPUN6S5 SPDN6S5 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit Inverse diode continuous forward current Inverse diode direct current, pulsed min. typ. max. I S T C =5 C. A I SM 5.7 Inverse diode forward voltage V SD V GS =V, I F =I S. V Reverse recovery time t rr V R =5V, I F =I S, 7 ns Reverse recovery charge Q rr di F /dt=a/µs. µc Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th.5 K/W C th.5 Ws/K R th. C th. R th.78 C th.96 R th.757 C th.9 R th5.68 C th5.8 R th6. C th6. P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev..5 Page 87

5 SPUN6S5 SPDN6S5 Power dissipation P tot = f (T C ) SPUN6S5 W Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C A Ptot 8 ID 6 8 tp =. ms tp =. ms tp =. ms tp = ms DC 6 8 C 6 T C V V DS Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T ZthJC K/W Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS ID A V V V 9V 8.5V 8V 7.5V 7V 6.5V 5 s t p Rev..5 Page V 5 V DS 87

6 SPUN6S5 SPDN6S5 5 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = A, V GS = V Ω 8 SPUN6S5 6 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 8 A RDS(on) 6 5 ID % typ 6 6 C 8 T j 7 Typ. gate charge V GS = f (Q Gate ) parameter: I D =. A pulsed 6 SPUN6S5 8 V V GS 8 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPUN6S5 V. V DS max.8 V DS max A VGS IF 8 6 T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) nc 9 Q Gate Rev..5 Page V V SD 87

7 SPUN6S5 SPDN6S5 9 Avalanche SOA I AR = f (t AR ) par.: T j 5 C.5 Avalanche energy E AS = f (T j ) par.: I D =. A, V DD = 5 V A mj T j(start) =5 C IAR.5 EAS T j(start) =5 C.5 µs t AR Drainsource breakdown voltage V (BR)DSS = f (T j ) 7 SPUN6S5 V 6 8 C 6 T j Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf V(BR)DSS C iss 6 C 6 C oss C rss C 8 T j Rev..5 Page V V DS 87

8 SPUN6S5 SPDN6S5 Definition of diodes switching characteristics Rev..5 Page 8 87

9 SPUN6S5 SPDN6S5 PGTO5, PGTO5, PGTO5 (DPAK) Rev..5 Page 9 87

10 SPUN6S5 SPDN6S5 PGTO5, PGTO5 (IPAK) Rev..5 Page 87

11 SPUN6S5 SPDN6S5 Rev..5 Page 87

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