SIPMOS Small-Signal-Transistor

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1 Type BSS225 SIPMOS Small-Signal-Transistor Feature n-channel enhancement mode Logic level Product Summary 1) V DS 6 V R DS(on),max 45 Ω I D.9 A dv /dt rated Qualified according to AEC Q11 Halogen free according to IEC SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes H6327: 3PCS/reel KD Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T A =25 C.9 A T A =7 C.73 Pulsed drain current I D,pulse T A =25 C.36 Reverse diode dv /dt dv /dt I D =.9 A, V DS =48 V, di /dt =2 A/µs, T j,max =15 C 6 kv/µs Gate source voltage V GS ±2 V ESD Class JESD22 A114 HBM Class 1a Power dissipation P tot T A =25 C 1. W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC /15/56 Rev page

2 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thja K/W Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage 1) V (BR)DSS V GS = V, I D =25 µa V Gate threshold voltage V GS(th) V DS =V GS ; ID=94 µa Drain-source leakage current I D (off) V DS =6 V, V GS = V, T j =25 C V DS =6 V, V GS = V, T j =15 C µa Gate-source leakage current I GSS V GS =2 V, V DS = V na Drain-source on-state resistance R DS(on) V GS =4.5 V, I D =.9 A W V GS =1 V, I D =.9 A Transconductance g fs V DS >2 I D R DS(on)max, I D =.75 A S 1) V DS is zero-hour rated, see note at p.8 Rev page

3 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss pf Output capacitance C oss V GS = V, V DS =25 V, f =1 MHz Reverse transfer capacitance C rss Turn-on delay time t d(on) ns Rise time t r V DD =3 V, V GS =1 V, I D =.9 A, Turn-off delay time t d(off) R G =6 Ω Fall time t f Gate Charge Characteristics Gate to source charge Q gs nc Gate to drain charge Q gd V DD =4 V, I D =.9 A, Gate charge total Q g V GS = to 1 V Gate plateau voltage V plateau V Reverse Diode Diode continous forward current I S A T A =25 C Diode pulse current I S,pulse Diode forward voltage V SD V GS = V, I F =.9 A, T j =25 C V Reverse recovery time t rr V R =3 V, I F =.9 A, ns Reverse recovery charge Q rr di F /dt =1 A/µs nc Rev page

4 1 Power dissipation 2 Drain current P tot =f(t A ) I D =f(t A ); V GS 1 V P tot [W] T A [ C] T A [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T A =25 C; D = Z thja =f(t p ) parameter: t p parameter: D =t p /T µs limited by on-state resistance 1 µs ms.2 1 ms Z thja [K/W] DC single pulse V DS [V] t p [s] Rev page

5 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C parameter: V GS parameter: V GS.3 V 1 V V3 V 3.2 V 3.6 V 3.8 V 4 V 38 5 V.25 V V V.15 V 3.6 R DS(on) [Ω] V V V V DS [V] Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C g fs [S] V GS [V] Rev page

6 9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =.1 A; V GS =1 V V GS(th) =f(t j ); V DS =V GS ; I D =94 µa parameter: I D % R DS(on) [Ω] %98 V GS(th) [V] typ % typ T j [ C] T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz; T j =25 C I F =f(v SD ) parameter: T j C 25 C 15 C, 98% 1 2 Ciss 1-1 C [pf] I F [A] 25 C, 98% Coss Crss V DS [V] V SD [V] Rev page

7 13 Typ. gate charge 14 Drain-source breakdown voltage V GS =f(q gate ); I D =.1 A pulsed V BR(DSS) =f(t j ); I D =25 µa parameter: V DD V V GS [V] 6 12 V 48 V V BR(DSS) [V] Q gate [nc] T j [ C] Rev page

8 Package Outline: Footprint: Packaging: Dimensions in mm note: Due to small size of the package, creeping currents between leads external to the package can occur in the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to maintain the values, specified in this document. Values given in this document are only valid for hour lifetime, if no suitable external protection is applied. Rev page

9 Published by Infineon Technologies AG Munich, Germany 28 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev page

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