Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls E AS. P tot 0.
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1 SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous drain current I D VPS56 Type Package Tape and Reel PGSOT23 L6327: 3pcs/r. Marking Ys Pin PIN 2 PIN 3 G S D Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T = 25 C T = 7 C I D Pulsed drain current T = 25 C valanche energy, single pulse I D =.33, V DD = 25 V, R GS = 25 W I D puls.32 E S valanche energy, periodic limited by T jmax E R.36 Reverse diode dv/dt I S =.33, V DS = 48 V, di/dt = 2 /µs, T jmax = 5 C dv/dt mj Gate source voltage V GS ±2 V Power dissipation P tot.36 W T = 25 C Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68 55/5/56 kv/µs Rev..2 Page 2625
2 Thermal Characteristics Parameter Symbol Values Unit Characteristics Thermal resistance, junction soldering point ( Pin 3 ) R thjs 5 K/W SMD version, device on min. 6 cm 2 cooling area ) R thj 35 3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Static Characteristics Drain source breakdown voltage V GS = V, I D = 25 µ V (BR)DSS 6 V Gate threshold voltage, V GS = V DS I D = 8 µ Zero gate voltage drain current V DS = 6 V, V GS = V, T j = 25 C V DS = 6 V, V GS = V, T j = 25 C Gatesource leakage current V GS = 2 V, V DS = V Drainsource onstate resistance V GS = 4.5 V, I D =.27 Drainsource onstate resistance V GS = V, I D =.33 V GS(th) I DSS.5 2. I GSS R DS(on) 2 3 W R DS(on).4 2 µ n Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev..2 Page
3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Dynamic Characteristics Transconductance V DS ³2*I D *R DS(on)max, I D =.27 Input capacitance V GS = V, V DS = 25 V, f = MHz Output capacitance V GS = V, V DS = 25 V, f = MHz Reverse transfer capacitance V GS = V, V DS = 25 V, f = MHz Turnon delay time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W Rise time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W Turnoff delay time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W Fall time V DD = 3 V, V GS = 4.5 V, I D =.27, R G = 43 W g fs C iss pf C oss 9 24 C rss t d(on) 7 9 S ns t r 7 6 t d(off) 56 7 t f 6 76 Rev..2 Page
4 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Dynamic Characteristics Gate to source charge V DD = 48 V, I D =.33 Gate to drain charge V DD = 48, I D =.33 Gate charge total V DD = 48 V, I D =.33, V GS = to V Gate plateau voltage V DD = 48 V, I D =.33 Q gs.2.8 Q gd..65 Q g V (plateau) 2.94 V nc Parameter Symbol Values Unit Reverse Diode Inverse diode continuous forward current I S.33 T = 25 C Inverse diode direct current,pulsed I SM.32 T = 25 C Inverse diode forward voltage V SD.84. V V GS = V, I F =.33 Reverse recovery time t rr ns V R = 3 V, I F =I S, di F /dt = 8 /µs Reverse recovery charge V R = 3 V, I F =l S, di F /dt = 8 /µs Q rr nc Rev..2 Page
5 Power Dissipation P tot = f (T ).38 W Drain current I D = f (T ) parameter: V GS ³ V Ptot C C 6 T T Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W 3 t p = 88.µs R DS(on) = V DS / I D µs ms ZthJC 2 ms D = DC single pulse V 2 V DS Rev..2 Page s 4 t p 2625
6 Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = 8 µs.8 P tot = W j ik hg lf e d V GS [V] a 2.5 b 3. c 3.5 c d 4. e 4.5 f 5. g 5.5 h 6. i 6.5 j 7. b k 8. l. a Typ. drainsourceonresistance R DS(on) = f (I D ) parameter: V GS RDS(on) 6.5 W a V GS [V] = a 2.5 b 3. c 3.5 d 4. b e 4.5 f 5. g 5.5 h 6. i 6.5 c d e l f h i g j k j 7. k l V 5. V DS Typ. transfer characteristics I D = f ( V GS ) V DS ³ 2 x I D x R DS(on)max parameter: t p = 8 µs I D Typ. forward transconductance g fs = f(i D ); T j =25 C parameter: g fs.7 S gfs V V GS Rev..2 Page
7 Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D =.33, V GS = V 5.5 W 4.5 Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 8 µ 3. V RDS(on) VGS(th) 2. 98% %.5 typ 2. typ. 2% C 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 3 T j C 6 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs pf 2 C C iss IF C oss C rss T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) V 35 V DS Rev..2 Page V 3. V SD 2625
8 valanche energy E S = f (T j ) para.: I D =.33, V DD = 25 V, R GS = 25 mj Typ. gate charge V GS = f (Q Gate ) parameter: I D =.33 pulsed 6 V ES 6 VGS ,2 V DS max,8 V DS max C 65 T j nc 3.4 Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 72 V V(BR)DSS C 8 T j Rev..2 Page
9 Published by Infineon Technologies G, Bereichs Kommunikation St.MartinStrasse 53, D854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev..2 Page
Preliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.
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SPPN6C3, SPBN6C3 SPIN6C3, SPAN6C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
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BSLSN OptiMOS - Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.V rated) Avalanche rated Product Summary V DS V R DS(on),max V GS = V mw V GS =. V 9 I D. A Qualified according
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Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
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OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
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Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to 1 MHz 1 5 PGTO26352 1 5 PGTO22512 Potentialfree temperature sensor with thyristor characteristics Overtemperature
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Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
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IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
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Type BSS225 SIPMOS Small-Signal-Transistor Feature n-channel enhancement mode Logic level Product Summary 1) V DS 6 V R DS(on),max 45 Ω I D.9 A dv /dt rated Qualified according to AEC Q11 Halogen free
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BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
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OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
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OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
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BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
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Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 3 2 Pin 1 2 3 G D S Type V DS I D R DS(on) Package Ordering
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Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
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