SPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
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1 SPNN6C3 Cool MOS Power Transistor V T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance R DS(on) 6 Ω I D.3 SOT VPS563 Type Package Ordering Code SPNN6C3 SOT-223 Q674-S428 Marking N6C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T = 25 C T = 7 C Pulsed drain current, t p limited by T jmax T = 25 C I D I D puls Gate source voltage static V GS ±2 V Gate source voltage C (f >Hz) V GS ±3 Power dissipation, T = 25 C P tot.8 W Operating and storage temperature T j, T stg C Rev. 2.2 Page
2 SPNN6C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 48 V, I D =.8, T j = 25 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - soldering point R thjs K/W SMD version, device on min. 6 cm 2 cooling area ) Soldering temperature,.6 mm (.63 in.) from case for s R thj T sold C Electrical Characteristics, at Tj=25 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.25m V Drain-Source avalanche V (BR)DS V GS =V, I D = breakdown voltage Gate threshold voltage V GS(th) I D =25µΑ, V GS =V DS Zero gate voltage drain current I DSS V DS =6V, V GS =V, µ T j =25 C, T j =5 C Gate-source leakage current I GSS V GS =3V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =.5, Ω T j =25 C T j =5 C Rev. 2.2 Page
3 SPNN6C3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS 2*I D *R DS(on)max, S I D =.2 Input capacitance C iss V GS =V, V DS =25V, - - pf Output capacitance C oss f=mhz Reverse transfer capacitance C rss Turn-on delay time t d(on) V DD =35V, V GS =/V, ns Rise time t r I D =.3, R G =Ω Turn-off delay time t d(off) Fall time t f Gate Charge Characteristics Gate to source charge Q gs V DD =35V, I D = nc Gate to drain charge Q gd Gate charge total Q g V DD =35V, I D =.3, V GS = to V Gate plateau voltage V (plateau) V DD =35V, I D = V Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.2 Page
4 SPNN6C3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T =25 C forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage V SD V GS =V, I F =I S V Reverse recovery time t rr V R =35V, I F =I S, ns Reverse recovery charge Q rr di F /dt=/µs µc Rev. 2.2 Page
5 SPNN6C3 Power dissipation P tot = f (T ).9 SPNN6C3 W 2 Safe operating area I D = f ( V DS ) parameter : D =, T =25 C.6.4 Ptot.2 ID tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC C 6 T -3 2 V 3 V DS 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T ZthJC 2 K/W 4 Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = µs, V GS ID V V 7V 6.5V - D =.5 D =.2 D =. D =.5 D =.2 D =. single pulse.5 6V 5.5V 5V s t p Rev. 2.2 Page V 25 V DS
6 SPNN6C3 5 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =.2, V GS = V 34 SPNN6C3 Ω 28 6 Typ. transfer characteristics I D = f ( V GS ); V DS 2 x I D x R DS(on)max parameter: t p = µs 2.5 RDS(on) 24 2 ID % typ C 8 T j 7 Typ. gate charge V GS = f (Q Gate) parameter: I D =.3 pulsed 6 SPNN6C3 V V 2 GS 8 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPNN6C3 V 2 VGS.2 V DS max.8 V DS max IF T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) nc 5.5 Q Gate Rev. 2.2 Page V 3 V SD
7 SPNN6C3 9 Drain-source breakdown voltage V (BR)DSS = f (T j ) 72 SPNN6C3 V Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 3 pf V(BR)DSS C 2 C iss C oss C rss C 8 T j V V DS Definition of diodes switching characteristics Rev. 2.2 Page
8 SPNN6C3 SOT-223 Rev. 2.2 Page
9 SPNN6C3 Published by Infineon Technologies G, 8726 Munich, Germany Infineon Technologies G 2 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page
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OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
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Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
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