Product Summary Drain source voltage. Lead free Yes I D. I D puls -320 E AS. P tot 340 W
|
|
- Kelley Hamilton
- 6 years ago
- Views:
Transcription
1 SPB8P6P G SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Pbfree lead plating: RoHS compliant Halogenfree according to IEC Qualified according to EC Q1 Type Package SPB8P6P G PGTO2633 Product Summary Drain source voltage V DS 6 Drainsource onstate resistance R DS(on).23 W Continuous drain current Lead free Yes I D 8 V Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T C = 25 C, 1) T C = C Pulsed drain current T C = 25 C valanche energy, single pulse I D = 8, V DD = 25 V, R GS = 25 W I D 8 64 I D puls 32 E S valanche energy, periodic limited by T jmax E R 34 Reverse diode dv/dt I S = 8, V DS = 48, di/dt = 2 /µs, T jmax = 175 C dv/dt mj Gate source voltage V GS ±2 V Power dissipation T C = 25 C P tot 34 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC /175/56 kv/µs 1 Current limited by bondwire; with an RthJC =.4 K/W the chip is able to carry I D = 91 Rev 1.6 Page
2 Thermal Characteristics SPB8P6P G Parameter Symbol Values Unit Characteristics Thermal resistance, junction case Thermal resistance, junction ambient, leaded R thj SMD version, device on min. 6 cm 2 cooling area 1) min. typ. max. R thjc.4 R thj K/W Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit Static Characteristics Drain source breakdown voltage V GS = V, I D = 25 µ Gate threshold voltage, V GS = V DS I D = 5.5 m Zero gate voltage drain current V DS = 6 V, V GS = V, T j = 25 C V DS = 6 V, V GS = V, T j = 15 C Gatesource leakage current V GS = 2 V, V DS = V Drainsource onstate resistance V GS = V, I D = 64 min. typ. max. V (BR)DSS 6 V V GS(th) I DSS I GSS R DS(on) W µ n 1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.6 Page
3 SPB8P6P G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance V DS ³2*I D *R DS(on)max, I D = 64 Input capacitance V GS = V, V DS = 25 V, f = 1 MHz Output capacitance V GS = V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance V GS = V, V DS = 25 V, f = 1 MHz Turnon delay time V DD = 3 V, V GS = V, I D = 64, R G = 1 W Rise time V DD = 3 V, V GS = V, I D = 64, R G = 1 W Turnoff delay time V DD = 3 V, V GS = V, I D = 64, R G = 1 W Fall time V DD = 3 V, V GS = V, I D = 64, R G = 1 W g fs C iss pf C oss C rss t d(on) S ns t r t d(off) t f 3 45 Rev 1.6 Page
4 SPB8P6P G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. typ. max. Unit Dynamic Characteristics Gate to source charge V DD = 48 V, I D = 8 Gate to drain charge V DD = 48 V, I D = 8 Gate charge total V DD = 48 V, I D = 8, V GS = to V Gate plateau voltage V DD = 48 V, I D = 8 Q gs Q gd 5 75 Q g V (plateau) 6.2 V nc Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current I S 8 T C = 25 C Inverse diode direct current,pulsed I SM 32 T C = 25 C Inverse diode forward voltage V SD V V GS = V, I F = 8 Reverse recovery time t rr ns V R = 3 V, I F =I S, di F /dt = /µs Reverse recovery charge V R = 3 V, I F =l S, di F /dt = /µs Q rr nc Rev 1.6 Page
5 SPB8P6P G Power dissipation P tot = f (T C ) 36 W Drain current I D = f (T C ) parameter: V GS ³ V Ptot 24 ID C C 19 T C T C Safe operating area I D = f ( V DS ) parameter : D =, T C = 25 C 3 t p = 14.µs Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W 1 ID 2 R DS(on) = V DS / I D µs 1 ms ms ZthJC 1 2 D = DC 3 4 single pulse V 2 V DS Rev 1.6 Page s t p 21191
6 SPB8P6P G Typ. output characteristic I D = f (V DS ); T j =25 C parameter: t p = 8 µs ID P tot = 34.W k j c 2 b a V i g e d V GS [V] a 4. b 4.5 c 5. d 5.5 e 6. h f 6.5 f g 7. h 7.5 i 8. j 9. k. V DS Typ. transfer characteristics I D = f ( V GS ) V DS ³ 2 x I D x R DS(on)max parameter: t p = 8 µs 8 6 Typ. drainsourceonresistance R DS(on) = f (I D ) parameter: V GS RDS(on).75 W b c d e f. V GS [V] = b c d e f g h i j k j k Typ. forward transconductance g fs = f(i D ); T j =25 C parameter: g fs S g h i I D ID 5 gfs V V GS I D Rev 1.6 Page
7 SPB8P6P G Drainsource onstate resistance R DS(on) = f (T j ) parameter : I D = 64, V GS = V.7 W Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 5.5 m 5. V % RDS(on) VGS(th) typ % typ % C 2 Typ. capacitances C = f (V DS ) parameter: V GS =V, f=1 MHz 5 T j C 2 T j Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs 3 pf 4 2 C IF C iss 3 C oss C rss 1 T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) V 25 V DS Rev 1.6 Page V 3. V SD 21191
8 SPB8P6P G valanche energy E S = f (T j ) para.: I D = 8, V DD = 25 V, R GS = 25 W 85 mj 7 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 8 pulsed 16 V 6 12 ES 5 VGS,2 V DS max,8 V DS max C 185 T j nc 18 Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 72 V V(BR)DSS C 2 T j Rev 1.6 Page
9 SPB8P6P G Rev
10 SPB8P6P G Rev
11 SPB8P6P G Published by Infineon Technologies G Munich, Germany 28 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.6 Page
12 Mouser Electronics uthorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: SPB8P6P G SPB8P6PGTM1
SPP08P06P H. SIPMOS Power-Transistor V DS -60 V I D T C = 25 C T C = 100 C. I D puls E AS I D = -8.8 A, V DD = -25 V, R GS = 25 W
H SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).3
More informationProduct Summary Drain source voltage. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SPB8P6P SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).23
More informationProduct Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
More informationMaximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls E AS. P tot 0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
More informationPreliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on) 8 Ω Continuous
More informationRev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS SmallSignalTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Qualified according to EC Q Product Summary V DS V R DS(on) 6 Ω I D.37 PGSOT3
More informationBSS670S2L. OptiMOS Buck converter series. Avalanche rated 1) Qualified according to AEC Q101 Halogen-free according to IEC
BSS67S2L OptiMOS Buck converter series Feature NChannel Logic Level valanche rated ) Enhancement mode Qualified according to EC Q Halogenfree according to IEC624922 Product Summary V DS 55 V R DS(on) 65
More informationProduct Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
More informationOptiMOS =Power-Transistor
SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source
More informationOptiMOS =Power-Transistor
SPI8N8S7 SPP8N8S7,SPB8N8S7 OptiMOS =PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated Product Summary V DS 75 V R DS(on) max. SMD version 7. m I D 8 P TO6 3 P
More informationMaximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) I D. I D puls 320.
SPP8N6S5 SPB8N6S5 OptiMOS PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) max. SMD version.8 m I D 8 P TO63 3
More informationBSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified
More informationBSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free
More informationRev Type Package RoHS compliant Tape and Reel Information BSP125 P-SOT-223 No
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant available Product Summary V DS 6 V R DS(on) 45 Ω.12 PGSOT223 Type Package RoHS compliant
More informationProduct Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
More informationSPD50N03S2-07 OptiMOS Power-Transistor
OptiMOS PowerTransistor Feature NChannel Enhancement mode Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175 C operating temperature valanche rated dv/dt rated Product Summary
More informationSPD30N08S2-22 OptiMOS Power-Transistor
SPD3N8S222 OptiMOS PowerTransistor Feature NChannel Enhancement mode 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 75 V R DS(on) 21.5 mω 3 P TO252 311 Type Package Ordering
More informationSPD30N06S2L-13 OptiMOS Power-Transistor
SPD3N6S2L13 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 13 mω 3 P TO252 311 Type Package
More informationPreliminary data. Continuous drain current I D 3-2 A
reliminary data SIMOS SmallSignalTransistor Features Dual and Channel Enhancement mode valanche rated dv/dt rated roduct Summary Drain source voltage DS 6 6 DrainSource onstate R DS(on).. Ω resistance
More informationSPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor
SPP8N6S2L7 SPB8N6S2L7 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 7 mω 8 P TO263 32 P
More informationProduct Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
More informationMaximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.
IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance
More informationRev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information
More informationBSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.
BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking
More informationMaximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.
SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5
More informationBSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39
More informationBSO604NS2 OptiMOS Power-Transistor
BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package
More informationBSS123. Rev K/W. R thja
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25
More informationPreliminary data. Type Package Ordering Code Tape and Reel Information BSP 317 P SOT-223 Q67042-S4167 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -5 V R DS(on) 4 Ω I D -.43 Drain pin /4 Source pin 3 SOT-3 4 3 VPS563 Type Package
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (. V rated) C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 7 mω I D -. SOT-
More informationMaximum Ratings, at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current E AS. P tot 0.36 W
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Type Package Tape and Reel Marking 1
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58
More informationType Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N
SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)
More informationSIPMOS Power-Transistor
SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
More informationPG-TO220FP P G-TO262 PG-TO220. Maximum Ratings Parameter Symbol Value Unit
SPP21N5C3 SPI21N5C3, SP21N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).19 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 I D 21 Ultra low gate charge
More informationPreliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 5.
Cool MOS =Power Transistor =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Optimized capacitances =Improved noise immunity =Former development
More informationCool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data P-TO5 SPUNS5
More informationSIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
More informationCool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data SPI7N6S5
More informationRev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape
More information14.5 Pulsed drain current. 200 Gate source voltage V GS ± 20 V ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation
SIPMOS Power Transistor BUZ 31 H N channel Enhancement mode valanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type V DS R DS(on) Package Pb-free BUZ 31 H 2 V 14.5.2 Ω PG-TO-22-3 Yes Maximum Ratings Parameter
More informationPreliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package
More informationSPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
More informationOptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) 4.5 mω Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow I D -9 A PG-TO252-3-11 175 C operating
More informationOptiMOS Power-Transistor
OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max 9. mω Features N-channel - Enhancement mode I D 5 A PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating temperature
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
More informationOptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
More informationOptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on),max 1.5 mω I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationOptiMOS Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max
More informationGreen Product (RoHS Compliant) AEC Qualified. D Pin 3 and TAB. Temperature Sensor
Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to 1 MHz 1 5 PGTO26352 1 5 PGTO22512 Potentialfree temperature sensor with thyristor characteristics Overtemperature
More informationOptiMOS 2 Power-Transistor
BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary
More informationOptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
More informationOptiMOS TM Power-MOSFET
BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.3 mω Features N-channel - Enhancement mode AEC qualified I D 5 A PG-TO252-3-33 MSL up to 26 C peak reflow 75 C operating temperature
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max (SMD version).8 mω Features N-channel - Enhancement mode I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- AEC qualified MSL up to 26 C peak
More informationMaximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Gate pin1 Product Summary V DS 1 V R DS(on) 6 Ω I D.17 Drain pin 3 Source pin 2 PG-SOT23 3 1 2 VPS5161 Type Package
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
More informationFinal data P-TO Maximum Ratings Parameter Symbol Value Unit I D
SPP7N8C3, SPB7N8C3 SP7N8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).9 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO I D 7 Ultra low gate charge Periodic avalanche
More informationOptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationSPP20N60S5. Cool MOS Power Transistor V DS 600 V
SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationOptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
More informationOptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS(on),max 5) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175
More informationOptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 1 V R DS(on),max 26 mw Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 35 A PG-TO252-3-11 MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS -4 V R DS(on) (SMD Version) 3.1 mw Features P-channel - Logic Level - Enhancement mode I D -12 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1 MSL1
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
More informationFinal data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO5 and TO5 I D 7.3 Ultra low gate charge Periodic avalanche rated
More informationOptiMOS -3 Small-Signal-Transistor
BSLSN OptiMOS - Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.V rated) Avalanche rated Product Summary V DS V R DS(on),max V GS = V mw V GS =. V 9 I D. A Qualified according
More informationOptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
More informationSPP03N60S5 SPB03N60S5
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche proved Extreme dv/dt rated Optimized capacitances Improved noise immunity Former development
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS V R DS(on).5 m Features N-channel - Enhancement mode AEC qualified MSL up to 26 C peak reflow 75 C operating temperature I D 3 A P/G-HSOF-8- Tab 8 Tab Green
More informationOptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
More informationOptiMOS -T2 Power-Transistor
IPB2N8S4-3 OptiMOS -T2 Power-Transistor Product Summary V DS 8 V R DS(on),max (SMD version) 2.5 mw Features N-channel - Enhancement mode AEC Q qualified I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- MSL
More informationOptiMOS -P2 Power-Transistor Product Summary
IPB8P3P4L-4 OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) (SMD Version) 4.1 mω Features P-channel - Logic Level - Enhancement mode I D -8 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationOptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
More informationOptiMOS 2 + OptiMOS -P 2 Small Signal Transistor
BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q11 1% lead-free; RoHS compliant Product Summary V DS
More informationOptiMOS P2 Small-Signal-Transistor
OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 1 V R DS(on),max 12 Ω I DSS,min.9 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More informationOptiMOS Small-Signal-Transistor
2N72DW OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Logic level Avalanche rated Fast switching Product Summary V DS 6 V R DS(on),max V GS =1 V 3 W V GS =4.5 V 4 I D.3 A Qualified
More informationSPP11N60C2, SPB11N60C2 SPA11N60C2. Cool MOS Power Transistor. Operating and storage temperature T j, T stg C.
SPPN6C, SPBN6C SPN6C Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances PTO33
More informationPackage Ordering Code BTS 282 Z 49 V 6.5 m P-TO Q67060-S6004-A2 P-TO Q67060-S6005-A2 P-TO Q67060-S6007.
Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to MHz 7 VPT5754 7 VPT567 Potentialfree temperature sensor with thyristor characteristics Overtemperature
More informationOptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
More informationDual N-Channel OptiMOS MOSFET
Dual N-Channel OptiMOS MOSFET Features Dual N-channel OptiMOS MOSFET Optimized for high performance Buck converter Logic level (4.5V rated) 1% avalanche tested Qualified according to JEDEC 1) for target
More informationOptiMOS Power-Transistor
OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R
More information