14.5 Pulsed drain current. 200 Gate source voltage V GS ± 20 V ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation
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1 SIPMOS Power Transistor BUZ 31 H N channel Enhancement mode valanche-rated Normal Level Pin 1 Pin 2 Pin 3 G D S Type V DS R DS(on) Package Pb-free BUZ 31 H 2 V Ω PG-TO-22-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current T C = 3 C 14.5 Pulsed drain current puls T C = 25 C 58 valanche current,limited by T jmax I R 13.5 valanche energy,periodic limited by T jmax E R 9 mj valanche energy, single pulse E S = 14.5, V DD = 5 V, R GS = 25 Ω L = 1.42 mh, T j = 25 C 2 Gate source voltage V GS ± 2 V ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation P tot W T C = 25 C 95 Operating temperature T j C Storage temperature T stg Thermal resistance, chip case R thjc 1.32 K/W Thermal resistance, chip to ambient R thj 75 DIN humidity category, DIN 4 4 E IEC climatic category, DIN IEC / 15 / 56 Rev. 2.5 Page
2 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V GS = V, =.25 m, T j = 25 C Gate threshold voltage V GS =V DS, = 1 m Zero gate voltage drain current V DS = 2 V, V GS = V, T j = 25 C V DS = 2 V, V GS = V, T j = 125 C Gate-source leakage current V GS = 2 V, V DS = V Drain-Source on-resistance V GS = 5 V, = V GS(th) SS I GSS R DS(on) V µ n Ω Rev. 2.5 Page
3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS 2 * * R DS(on)max, = Input capacitance C iss V GS = V, V DS = 25 V, f = 1 MHz Output capacitance C oss V GS = V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance C rss V GS = V, V DS = 25 V, f = 1 MHz Turn-on delay time t d(on) V DD = 3 V, V GS = 5 V, = 3 R GS = 5 Ω Rise time t r V DD = 3 V, V GS = 5 V, = 3 R GS = 5 Ω Turn-off delay time t d(off) V DD = 3 V, V GS = 5 V, = 3 R GS = 5 Ω Fall time t f V DD = 3 V, V GS = 5 V, = 3 R GS = 5 Ω S pf ns Rev. 2.5 Page
4 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage V GS = V, I F = 29 Reverse recovery time V R = 1 V, I F =l S, di F /dt = 1 /µs Reverse recovery charge V R = 1 V, I F =l S, di F /dt = 1 /µs I SM V SD t rr Q rr V ns µc Rev. 2.5 Page
5 Power dissipation P tot = ƒ(t C ) Drain current = ƒ(t C ) parameter: V GS 1 V 1 14 W P tot C 16 T C C 16 T C Safe operating area = ƒ(v DS ) parameter: D =.1, T C = 25 C Transient thermal impedance Z th JC = ƒ(t p ) parameter: D = t p / T 1 2 t p = 15.µs R DS(on) = V DS / 1 µs 1 ms Z thjc K/W ms 1-1 D = DC single pulse V V DS s 1 t p Rev. 2.5 Page
6 Typ. output characteristics = ƒ(v DS ) parameter: t p = 8 µs Typ. drain-source on-resistance R DS (on) = ƒ( ) parameter: V GS 32 P tot = 95W l k j i h g V GS [V].65 Ω.55 a b c d e 24 2 f e a 4. b 4.5 c 5. d 5.5 e 6. R DS (on) f 6.5 g 7. d h 7.5 i 8. j 9. c k 1. l f g h i j k 4 a V 13 V DS b.1.5 V GS [V] = a b 5. c 5.5 d 6. e 6.5 f 7. g 7.5 h 8. i 9. j 1. k Typ. transfer characteristics = f (V GS ) parameter: t p = 8 µs V DS 2 x x R DS(on)max Typ. forward transconductance g fs = f ( ) parameter: t p = 8 µs, V DS 2 x x R DS(on)max S g fs V 1 V GS Rev. 2.5 Page
7 Drain-source on-resistance R DS (on) = ƒ(t j ) parameter: = 9, V GS = 1 V Gate threshold voltage V GS (th) = ƒ(t j ) parameter: V GS = V DS, = 1 m.75 Ω.65 R DS (on) % typ C 16 T j V GS(th) 4.6 V % typ 2% C 16 T j Typ. capacitances C = f (V DS ) parameter:v GS = V, f = 1MHz 1 4 Forward characteristics of reverse diode I F = ƒ(v SD ) parameter: T j, t p = 8 µs 1 2 C pf I F C iss 1 2 C oss C rss 1 T j = 25 C typ T j = 15 C typ T j = 25 C (98%) T j = 15 C (98%) V 4 V DS V 3. V SD Rev. 2.5 Page
8 valanche energy E S = ƒ(t j ) parameter: = 14.5, V DD = 5 V R GS = 25 Ω, L = 1.42 mh Typ. gate charge V GS = ƒ(q Gate ) parameter: puls = mj V E S V GS ,2 V DS max,8 V DS max C 16 T j Q Gate Drain-source breakdown voltage V (BR)DSS = ƒ(t j ) 24 V 23 V (BR)DSS C 16 T j Rev. 2.5 Page
9
10 Published by Infineon Technologies G Munich, Germany 29 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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