OptiMOS TM Power-Transistor
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1 Type BSC14N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max I D Q OSS Q G (V..1V) V mw A nc nc PG-TDSON-8 FL Halogen-free according to IEC enlarged source interconnection Higher solder joint reliability due to enlarged source interconnection Type Package Marking BSC14N6NS PG-TDSON-8 FL 14N6NS Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS =1 V, T C =25 C 1 A V GS =1 V, T C =1 C 1 V GS =1 V, T C =25 C, R thja =5 K/W 2) 3 Pulsed drain current 3) I D,pulse T C =25 C 4 Avalanche energy, single pulse 4) E AS I D =5 A, R GS =25 W 58 mj Gate source voltage V GS ±2 V 1) J-STD2 and JESD22 2) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.1 page
2 BSC14N6NS Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Power dissipation P tot T C =25 C 156 W T A =25 C, R thja =5 K/W 2) 2.5 Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC /15/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc bottom K/W top Device on PCB R thja 6 cm 2 cooling area 2) Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =1 ma V Gate threshold voltage V GS(th) V DS =V GS, I D =12 µa Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =25 C V DS =6 V, V GS = V, T j =125 C µa Gate-source leakage current I GSS V GS =2 V, V DS = V na Drain-source on-state resistance R DS(on) V GS =1 V, I D =5 A mw V GS =6 V, I D =12.5 A Gate resistance R G W Transconductance g fs V DS >2 I D R DS(on)max, I D =5 A S Rev.2.1 page
3 BSC14N6NS Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss pf Output capacitance C oss V GS = V, V DS =3 V, f =1 MHz Reverse transfer capacitance C rss Turn-on delay time t d(on) ns Rise time t r V DD =3 V, V GS =1 V, I D =3 A, Turn-off delay time t d(off) R G,ext,ext=2 W Fall time t f Gate Charge Characteristics 5) Gate to source charge Q gs nc Gate charge at threshold Q g(th) Gate to drain charge Q gd V DD =3 V, I D =5 A, Switching charge Q sw V GS = to 1 V Gate charge total Q g Gate plateau voltage V plateau V Gate charge total, sync. FET Q g(sync) V DS =.1 V, V GS = to 1 V nc Output charge Q oss V DD =3 V, V GS = V Reverse Diode Diode continuous forward current I S T C =25 C A Diode pulse current I S,pulse Diode forward voltage V SD V GS = V, I F =5 A, T j =25 C V Reverse recovery time t rr V R =3 V, I F =5 A, ns Reverse recovery charge Q rr di F /dt =1 A/µs nc 5) See figure 16 for gate charge parameter definition Rev.2.1 page
4 I D [A] Z thjc [K/W] P tot [W] I D [A] BSC14N6NS 1 Power dissipation 2 Drain current P tot =f(t C ) I D =f(t C ); V GS 1 V T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T 1 3 limited by on-state resistance 1 1 µs 1 µs ms 1 µs DC 1 ms single pulse V DS [V] t p [s] Rev.2.1 page
5 I D [A] g fs [S] I D [A] R DS(on) [mw] 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C BSC14N6NS parameter: V GS parameter: V GS V 7 V 6 V 4 5 V 5.5 V V V 2 6 V 7 V V V DS [V] I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j C 25 C V GS [V] I D [A] Rev.2.1 page
6 C [pf] R DS(on) [mw] V GS(th) [V] I F [A] BSC14N6NS 9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =5 A; V GS =1 V V GS(th) =f(t j ); V GS =V DS max 3 12 ma 12 µa typ T j [ C] T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz I F =f(v SD ) parameter: T j Ciss 1 3 Coss C C Crss V DS [V] V SD [V] Rev.2.1 page
7 V BR(DSS) [V] I AV [A] V GS [V] BSC14N6NS 13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 W parameter: T j(start) 1 V GS =f(q gate ); I D =5 A pulsed parameter: V DD 12 3 V 1 25 C 12 V 48 V 1 C C t AV [µs] Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) =f(t j ); I D =1 ma 7 V GS 66 Q g V gs(th) 54 Q g(th) Q sw Q gate T j [ C] Q gs Q gd Rev.2.1 page
8 BSC14N6NS Package Outline PG-TDSON-8 FL PG-TDSON-8 FL: Outline Rev.2.1 page
9 BSC14N6NS Package Outline PG-TDSON-8: Tape Rev.2.1 page
10 BSC14N6NS Published by Infineon Technologies AG Munich, Germany 212 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.1 page
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CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
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SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 6 V R DS(on),max 8 Ω I DSS,min.13 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified
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CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified
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CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability
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CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak
More informationSIPMOS Small-Signal-Transistor
Type SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic level BSS131 Product Summary V DS 24 V R DS(on),max 14 Ω I D.1 A dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23
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IPP9R1K2C3 CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.29 Ω Q g,typ 88 nc Qualified
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CoolMOS TM Power Transistor Features Worldwide best R DS,on in TO22 Lowest figure of merit R ON x Q g Ultra low gate charge Product Summary V DS @T jmax 55 V R DS(on),max.14 Ω Q g,typ 48 nc Extreme dv/dt
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CoolMOS TM Power Transistor Features Lowest figure of merit R ON x Q g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @T jmax 55 V R DS(on),max.52 Ω Q g,typ 13 nc High peak current capability
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IPB8N6S2L-11 IPP8N6S2L-11, IPI8N6S2L-11 OptiMOS Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow Product Summary V DS 55 V R DS(on),max
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SPP15N6CFD CoolMOS TM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Product
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IPW6R125CP CoolMOS TM Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.125 Ω Q g,typ 53 nc High peak
More informationBSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified
More informationBSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free
More informationBSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39
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CoolMOS Power Transistor Product Summary V DS 6 V R DS(on),max.45 Ω Features Q g,typ 15 nc Worldwide best R ds,on in TO247 Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability
More informationType Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N
SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)
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