Green Product (RoHS Compliant) AEC Qualified. D Pin 3 and TAB. Temperature Sensor
|
|
|
- Philomena Craig
- 6 years ago
- Views:
Transcription
1 Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to 1 MHz 1 5 PGTO PGTO22512 Potentialfree temperature sensor with thyristor characteristics Overtemperature protection Green Product (RoHS Compliant) valanche rated EC Qualified Type V DS R DS(on) Package E V 13 m PGTO26352 E343 PGTO22512 D Pin 3 and TB G Pin 1 Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin Symbol Function 1 G Gate 2 node Temperature Sensor 3 D Drain 4 K Cathode Temperature Sensor 5 S Source Data Sheet 1 Rev.1.4,
2 Maximum Ratings Parameter Symbol Value Unit Drain source voltage V DS 55 V Draingate voltage, R GS = 2 k V DGR 55 Gate source voltage V GS 2 Nominal load current (ISO 483) I D(ISO) V GS = 4.5 V, V DS.5 V, T C = 85 C 19 V GS = V, V DS.5 V, T C = 85 C 26 Continuous drain current 1) I D 35 T C = C, V GS = 4.5V Pulsed drain current I D puls 188 valanche energy, single pulse E S 1.65 J I D = 19, R GS = 25 Power dissipation P tot 17 W T C = 25 C Operating temperature 2) T j C Peak temperature ( single event ) T jpeak 2 Storage temperature T stg DIN humidity category, DIN 4 4 E IEC climatic category; DIN IEC 681 4/15/56 1 current limited by bond wire 2 Note: Thermal trip temperature of temperature sensor is below 175 C Data Sheet 2 Rev.1.4,
3 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction case: R thjc.88 K/W Thermal min. footprint R th(j) 62 Thermal 6 cm 2 cooling area 1) R th(j) 33 4 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Static Characteristics Drainsource breakdown voltage V GS = V, I D =.25 m V (BR)DSS 55 V Gate threshold voltage, V GS = V DS V GS(th) 1.2 I D = 13 μ I D = 25 μ 1.65 Zero gate voltage drain current I DSS μ V DS = 5 V, V GS = V, T j = 4 C.1 V DS = 5 V, V GS = V, T j = 25 C.1 1 V DS = 5 V, V GS = V, T j = 15 C Gatesource leakage current n V GS = 2 V, V DS = V, T j = 25 C I GSS V GS = 2 V, V DS = V, T j = 15 C 2 DrainSource onstate resistance V GS = 4.5 V, I D = 19 V GS = V, I D = 19 R DS(on) m 1 Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 7μm thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.4,
4 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Dynamic Characteristics Forward transconductance g fs 25 S V DS >2*I D *R DS(on)max, I D = 35 Input capacitance C iss pf V GS = V, V DS = 25 V, f = 1 MHz Output capacitance C oss 6 75 V GS = V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance C rss 32 4 V GS = V, V DS = 25 V, f = 1 MHz Turnon delay time t d(on) ns V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 Rise time t r 7 5 V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 Turnoff delay time t d(off) 4 6 V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 Fall time V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 t f 25 4 Gate Charge Characteristics Gate charge at threshold V DD = 4 V, I D =.1, V GS = to 1 V Gate charge at 5. V V DD = 4 V, I D = 47, V GS = to 5 V Gate charge total V DD = 4 V, I D = 47, V GS = to V Gate plateau voltage V DD = 4 V, I D = 47 Q g(th) nc Q g(5) 5 75 Q g(total) V (plateau) 4.5 V Data Sheet 4 Rev.1.4,
5 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Reverse Diode Inverse diode continuous forward current I S 35 T C = 25 C Inverse diode direct current,pulsed I FM 188 T C = 25 C Inverse diode forward voltage V SD V V GS = V, I F = 94 Reverse recovery time t rr ns V R = 3 V, I F =I S, di F /dt = /μs Reverse recovery charge Q rr μc V R = 3 V, I F =I S, di F /dt = /μs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept Speed TEMPFET. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family. ll application notes are available at Forward voltage I K(on) = 5 m, T j = C I K(on) = 1.5 m, T j = 15 C Sensor override t P = μs, T j = C Forward current T j = C Sensor override t P = μs, T j = C V K(on) V I K(on) 5 m 6 Data Sheet 5 Rev.1.4,
6 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Sensor Characteristics Temperature sensor leakage current I K(off) 4 μ T j = 15 C Min. reset pulse duration 1) t reset μs T j = C, I K(on) =.3 m, V K(Reset) <.5V V K Recovery time 1)2) T j = C, I K(on) =.3 m t recovery 15 Characteristics Holding current, V K(off) = 5V T j = 25 C T j = 15 C Thermal trip temperature V TS = 5V Turnoff time (Pin G+ and K+S connected) V TS = 5V, I TS(on) = 2 m Reset voltage T j = C I K(hold) m T TS(on) C t off μs V K(reset).5 V Sensor recovery behaviour: Sensor RESET V K [V ] t reset 5 4 Sensor t recovery ON Reset OFF 1 See diagram Sensor recovery behaviour 2 Time after reset pulse until VK reaches 4V again Data Sheet 6 Rev.1.4,
7 1 Maximum allowable power dissipation P tot = f(t C ) 2 Drain current I D = f(t C ); V GS 4.5V Ptot 12 ID C C 18 T C T C 3 Typ. transient thermal impedance Z thj =f(t p 6 cm 2 cooling area Parameter: D=t p /T 2 K/W 4 Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W 1 D=.5.2 D=.5 ZthJ ZthJC Single pulse 3 Single pulse s 3 t p s 3 t p Data Sheet 7 Rev.1.4,
8 5 Safe operating area I D =f(v DS ); D=.1; T C =25 C 6 Typ. output characteristic I D = f(v DS ); T j =25 C Parameter: V GS 18 V 14 7V 6V 12 ID ID 5V 8 4.5V 6 4V 4 3.5V 2 3V 1 2 V 4 V DS 7 Onstate resistance 8 Onstate resistance R ON = f(t j ); I D =19; V GS = 4.5V R ON = f(t j ); I D =19; V GS = V 4 3 m max. m max. RDS(on) 3 25 typ. RDS(on) 2 typ C 175 T j C 175 T j Data Sheet 8 Rev.1.4,
9 9 Typ. transfer characteristics I D = f(v GS ); V DS = 12V; T j = 25 C Typ. input threshold voltage V GS(th) = f(tj); V DS =V GS Parameter: I D 2.4 V 8 2. ID 7 6 VGS(th) m 13m m μ V 5 V GS 11 Typ. capacitances C = f(v DS ); V GS = V, f=1 MHz C 175 T j 12 Typ. forward charcteristics of reverse diode I F = f(v SD ) t p = 8μs (spread); Parameter: T j 2 nf 15 C Ciss 1 25 C C IF Coss Crss V 4 V DS V 1.6 V SD Data Sheet 9 Rev.1.4,
10 13 Typ. gate charge V GS = f(q Gate ); I D puls = Drainsource break down voltage V (BR)DSS = f(t j ) 16 BTS 244 Z 66 V V VGS 12,2 V DS max,8 V DS max V(BR)DSS nc 14 Q Gate C 18 T j Data Sheet Rev.1.4,
11 Package Outlines 1 Package Outlines (15) ±.2 1 ±.3 ± ) 1) ± ±.1 B ± ± x.8 ±.1 4 x ±.1.25 M B 8 MX..1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 ll metal surfaces tin plated, except area of cut. GPT962 Figure 1 PGTO26352 ± ± ) B ±.1 17 ± ±.3 1) ± ±.2 C 11 ±.5 13 ± ±.1 5 x.8 ± x M B C 1) Typical Metal surface min. X = 7.25, Y = 12.3 ll metal surfaces tin plated, except area of cut. Figure 2 PGTO22512 Data Sheet 11 Rev.1.4,
12 Package Outlines Green Product (RoHS compliant) To meet the worldwide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHSCompliant (i.e Pbfree finish on leads and suitable for Pbfree soldering according to IPC/JEDEC JSTD2). For further information on alternative packages, please visit our website: Dimensions in mm Data Sheet 12 Rev.1.4,
13 Revision History 2 Revision History Revision Date Changes page 1, 11: updated package name and package drawing: PGTO22562 to PGTO26352 (SMD) PGTO22543 to PGTO22512 (THD, straight leads); page 1, 11/12: removed package: PGTO2253 (THD, staggered leads) page 1: added sales names for the different packages; page 8: updated description figure updated package drawing of PGTO removed ms and DC line in SO diagram all pages: added new Infineon logo Initial version of RoHScompliant derivate of the Page 1 and 12: added RoHS compliance statement and Green product feature Page 1, 11 and 12: Package changed to RoHS compliant version page 13: added Revision history page 14: update of disclaimer Data Sheet 13 Rev.1.4,
14 Edition Published by Infineon Technologies G Munich, Germany 213 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Package Ordering Code BTS 282 Z 49 V 6.5 m P-TO Q67060-S6004-A2 P-TO Q67060-S6005-A2 P-TO Q67060-S6007.
Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to MHz 7 VPT5754 7 VPT567 Potentialfree temperature sensor with thyristor characteristics Overtemperature
SPP08P06P H. SIPMOS Power-Transistor V DS -60 V I D T C = 25 C T C = 100 C. I D puls E AS I D = -8.8 A, V DD = -25 V, R GS = 25 W
H SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).3
Product Summary Drain source voltage. Lead free Yes I D. I D puls -320 E AS. P tot 340 W
SPB8P6P G SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Pbfree lead plating: RoHS compliant Halogenfree according to IEC61249221 Qualified
BSS670S2L. OptiMOS Buck converter series. Avalanche rated 1) Qualified according to AEC Q101 Halogen-free according to IEC
BSS67S2L OptiMOS Buck converter series Feature NChannel Logic Level valanche rated ) Enhancement mode Qualified according to EC Q Halogenfree according to IEC624922 Product Summary V DS 55 V R DS(on) 65
Rev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS SmallSignalTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Qualified according to EC Q Product Summary V DS V R DS(on) 6 Ω I D.37 PGSOT3
Product Summary Drain source voltage. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
Product Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
BSS670S2L. OptiMOS Buck converter series. Product Summary. Feature V DS 55 V. R DS(on) 650 mω. Enhancement mode I D 0.54 A. Logic Level.
BSS67S2L OptiMOS Buck converter series Feature NChannel Enhancement mode Logic Level Product Summary V DS 55 V R DS(on) 65 mω I D.54 PGSOT 23 Type Package Ordering Code BSS67S2L PGSOT 23 Q6742S452 Marking
Preliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V DrainSource onstate resistance R DS(on) 8 Ω Continuous
BSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified
Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls E AS. P tot 0.
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
Rev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Product Summary V DS 4 V R DS(on) 25 Ω I D.17 SOT223 Type Package Tape and Reel Information
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SPB8P6P SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).23
Rev Type Package RoHS compliant Tape and Reel Information BSP125 P-SOT-223 No
SIPMOS PowerTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant available Product Summary V DS 6 V R DS(on) 45 Ω.12 PGSOT223 Type Package RoHS compliant
BSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free
Product Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
OptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 1 V R DS(on),max 26 mw Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 35 A PG-TO252-3-11 MSL1 up to 26 C peak reflow 175 C operating
OptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
OptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
OptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on),max 1.5 mω I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating
OptiMOS Power-Transistor
OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
BSS123. Rev K/W. R thja
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25
OptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
PG-TO220FP P G-TO262 PG-TO220. Maximum Ratings Parameter Symbol Value Unit
SPP21N5C3 SPI21N5C3, SP21N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).19 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 I D 21 Ultra low gate charge
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (. V rated) C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 7 mω I D -. SOT-
OptiMOS =Power-Transistor
SPI8N8S7 SPP8N8S7,SPB8N8S7 OptiMOS =PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated Product Summary V DS 75 V R DS(on) max. SMD version 7. m I D 8 P TO6 3 P
Preliminary data. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -2.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58
SIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
OptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) I D. I D puls 320.
SPP8N6S5 SPB8N6S5 OptiMOS PowerTransistor Feature NChannel Enhancement mode 75 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) max. SMD version.8 m I D 8 P TO63 3
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
OptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
OptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max 9. mω Features N-channel - Enhancement mode I D 5 A PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating temperature
Preliminary data. Continuous drain current I D 3-2 A
reliminary data SIMOS SmallSignalTransistor Features Dual and Channel Enhancement mode valanche rated dv/dt rated roduct Summary Drain source voltage DS 6 6 DrainSource onstate R DS(on).. Ω resistance
OptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS(on),max 5) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.3 mω Features N-channel - Enhancement mode AEC qualified I D 5 A PG-TO252-3-33 MSL up to 26 C peak reflow 75 C operating temperature
OptiMOS Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max
OptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
Green Product (RoHS compliant) AEC Qualified
1 Green Product (RoHS compliant) AEC Qualified V DS E3180A G63-7-1 E3230 7 G202 PG-TO263-7-1 PG-TO220-7-12 Data Sheet 1 Rev.1.3, 2013-07-26 Drain source voltage V DS Drain-gate voltage R GS k V DGR Gate
OptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
OptiMOS -P2 Power-Transistor
OptiMOS -P2 Power-Transistor Product Summary V DS -4 V R DS(on) (SMD Version) 3.1 mw Features P-channel - Logic Level - Enhancement mode I D -12 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1 MSL1
SPD30N06S2L-13 OptiMOS Power-Transistor
SPD3N6S2L13 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 13 mω 3 P TO252 311 Type Package
OptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
OptiMOS 2 + OptiMOS -P 2 Small Signal Transistor
BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max
OptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
Type Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N
SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)
SPD50N03S2-07 OptiMOS Power-Transistor
OptiMOS PowerTransistor Feature NChannel Enhancement mode Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175 C operating temperature valanche rated dv/dt rated Product Summary
BSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max (SMD version).8 mω Features N-channel - Enhancement mode I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- AEC qualified MSL up to 26 C peak
OptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS V R DS(on).5 m Features N-channel - Enhancement mode AEC qualified MSL up to 26 C peak reflow 75 C operating temperature I D 3 A P/G-HSOF-8- Tab 8 Tab Green
OptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
OptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
OptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
SPD30N08S2-22 OptiMOS Power-Transistor
SPD3N8S222 OptiMOS PowerTransistor Feature NChannel Enhancement mode 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 75 V R DS(on) 21.5 mω 3 P TO252 311 Type Package Ordering
OptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
SIPMOS Power-Transistor
SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
OptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
Maximum Ratings, at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current E AS. P tot 0.36 W
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Type Package Tape and Reel Marking 1
OptiMOS TM P3 Power-Transistor
BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications
OptiMOS 3 M-Series Power-MOSFET
BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS
SPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. I D puls E AS. dv/dt 6 kv/µs.
IPD6N3LZ OptiMOS PowerTransistor Feature Ideal for highfrequency dc/dc converters nchannel Logic Level Excellent Gate Charge x R DS(on) product (FOM) Low OnResistance R DS(on) Superior thermal resistance
OptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
OptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
OptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
OptiMOS 3 M-Series Power-MOSFET
BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R
SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor
SPP8N6S2L7 SPB8N6S2L7 OptiMOS PowerTransistor Feature NChannel Enhancement mode Logic Level 175 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 7 mω 8 P TO263 32 P
OptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
OptiMOS TM Power-MOSFET
BSC1NE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance N-channel Qualified
Preliminary data. Type Package Ordering Code Tape and Reel Information BSP 317 P SOT-223 Q67042-S4167 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -5 V R DS(on) 4 Ω I D -.43 Drain pin /4 Source pin 3 SOT-3 4 3 VPS563 Type Package
OptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
OptiMOS -3 Small-Signal-Transistor
BSLSN OptiMOS - Small-Signal-Transistor Features N-channel Enhancement mode Logic level (.V rated) Avalanche rated Product Summary V DS V R DS(on),max V GS = V mw V GS =. V 9 I D. A Qualified according
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape
Dual N-Channel OptiMOS MOSFET
Dual N-Channel OptiMOS MOSFET Features Dual N-channel OptiMOS MOSFET Optimized for high performance Buck converter Logic level (4.5V rated) 1% avalanche tested Qualified according to JEDEC 1) for target
BSO604NS2 OptiMOS Power-Transistor
BSO6NS OptiMOS Power-Transistor Feature Dual N-Channel Enhancement mode Logic Level 5 C operating temperature valanche rated dv/dt rated Product Summary V DS 55 V R DS(on) 35 mω I D 5 P-DSO-8-7 Type Package
OptiMOS -T Power-Transistor
IPB35N2S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 2 V R DS(on),max 26.3 mw Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode I D 35 A PG-TO263-3-2 Tab
OptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
OptiMOS =Power-Transistor
SPB8N6SL-7 OptiMOS =Power-Transistor Features N-Channel Enhancement mode valanche rated Logic Level dv/dt rated =175 C operating temperature Product Summary Drain source voltage V DS 55 V Drain-source
OptiMOS TM Power-MOSFET
BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (
OptiMOS TM Power-Transistor
Type BSC14N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target
OptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
OptiMOS -T2 Power-Transistor
IPB2N8S4-3 OptiMOS -T2 Power-Transistor Product Summary V DS 8 V R DS(on),max (SMD version) 2.5 mw Features N-channel - Enhancement mode AEC Q qualified I D 2 A PG-TO263-3-2 PG-TO262-3- PG-TO22-3- MSL
OptiMOS -P2 Power-Transistor Product Summary
IPB8P3P4L-4 OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) (SMD Version) 4.1 mω Features P-channel - Logic Level - Enhancement mode I D -8 A AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO22-3-1
OptiMOS 3 M-Series Power-MOSFET
BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible
Cool MOS Power Transistor
Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity Final data P-TO5 SPUNS5
OptiMOS TM Power-MOSFET
BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel
OptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) 4.5 mω Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow I D -9 A PG-TO252-3-11 175 C operating
OptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
OptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
OptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features Dual N-channel Enhancement mode Ultra Logic level (1.8V rated) Avalanche rated Qualified according to AEC Q11 1% lead-free; RoHS compliant Product Summary V DS
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
OptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V