Product Summary V DS V. R DS(on),max V GS =10 V mw I D A. Parameter Symbol Conditions Value Unit T C =70 C, V GS =4.

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BSG81NDI Power Block Features Dual asymmetric N-channel OptiMOS 5 MOSFET Logic level (4.

(VPhase) (5) S1/D (VPhase) (6) S1/D (VPhase) (7) G (GLS) (8) (1) Q1 (9) S (GND) (4) (3) () (1) D1 (Vin) D1 (Vin) S1 (VPhase) G1 (GHS) Top view Type

drain current I D T C =7 C, V GS =1 V 5 5 A Q1 T C =7 C, V GS =4.5 V 5 5 T A =5 C, V GS =4.5 V 3) 31 5 T A =5 C, V GS =4.

1 BSG81NDI Power Block Features Dual asymmetric N-channel OptiMOS 5 MOSFET Logic level (4.5V rated) Pb-free lead plating; RoHS compliant Optimized for high performance Buck converter Product Summary Q1 V DS 5 5 V R DS(on),max V GS =1 V 3.85 mw V GS =4.5 V 4 1. I D 5 5 A Qualified according to JEDEC 1) for target applications Halogen-free according to IEC Monolithic integrated Schottky like diode S1/D (VPhase) (5) S1/D (VPhase) (6) S1/D (VPhase) (7) G (GLS) (8) (1) Q1 (9) S (GND) (4) (3) () (1) D1 (Vin) D1 (Vin) S1 (VPhase) G1 (GHS) Top view Type Package Marking BSG81NDI PG-TISON8-4 81NDI Maximum ratings, at T j =5 C, unless otherwise specified ) Parameter Symbol Conditions Value Unit Continuous drain current I D T C =7 C, V GS =1 V 5 5 A Q1 T C =7 C, V GS =4.5 V 5 5 T A =5 C, V GS =4.5 V 3) 31 5 T A =5 C, V GS =4.5 V 4) Pulsed drain current I D,pulse T C =7 C Avalanche energy, single pulse E AS : I D = A, Q1: I D =1 A, R GS =5 W 3 9 mj Gate source voltage V GS T j =5 C ±16 V Power dissipation P tot T A =5 C 3) W T A =5 C 4).5.5 Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC /15/56 1) J-STD and JESD Rev..1 page

2 BSG81NDI Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case Q1 R thjc K/W Thermal resistance, junction - ambient ) Q1 R thja Application specific board 3) - - Q1 6 cm cooling area 4) Electrical characteristics, at T j =5 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Breakdown voltage temperature coefficient Q1 Q1 V (BR)DSS dv (BR)DSS /dt j V GS = V, I D =1 ma I D =1 ma, referenced to 5 C 5 6) - - V mv/k Gate threshold voltage Q1 V GS(th) V DS =V GS, I D =5 µa V Zero gate voltage drain current Q1 I DSS V DS =5 V, V GS = V, µa T j =5 C Q1 V DS = V, V GS = V, T j =15 C ma Gate-source leakage current Q1 I GSS V GS =16 V, V DS = V na Drain-source on-state resistance Q1 R DS(on) V GS =4.5 V, I D = A mw Q1 V GS =1 V, I D = A Gate resistance Q1 R G W Transconductance Q1 g fs V DS > I D R DS(on)max, S I D = A ) Remark: only one of both transistors active Rev..1 page

3 BSG81NDI Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance Q1 C iss pf Output capacitance Q1 C oss V GS = V, V DS = 1 V, f =1 MHz Reverse transfer capacitance Q1 C rss Turn-on delay time Q1 t d(on) ns Rise time Q1 t r V IN =1 V, V DRV =5 V, F SW =5 KHz, Turn-off delay time Q1 t d(off) I OUT =3 A 5) Fall time Q1 t f Gate Charge Characteristics Gate to source charge Q1 Q gs -. - nc Gate to drain charge Q gd Gate charge total Q g Gate plateau voltage V plateau V DD =1 V, I D = A, V Gate to source charge Q gs V GS = to 4.5 V nc Gate to drain charge Q gd Gate charge total Q g Gate plateau voltage V plateau V Output charge Q1 Q oss V DD =1 V, V GS = V nc - 6-3) 8 Layers copper 7μm thickness. PCB in still air 4) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 7 μm thick) copper area for drain connection. PCB is vertical in still air. Rev..1 page

4 BSG81NDI Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode Diode continuous forward current Q1 I S A T C =5 C 5 Diode pulse current Q1 I S,pulse Diode forward voltage Q1 V SD V GS = V, I F = A, T j =5 C V V GS = V, I F =11 A, T j =5 C Reverse recovery charge Q1 Q rr V R =1 V, I F =I S, nc di F /dt =1 A/µs 5) For more information see application note n TBD 6) The device can withstand a pulse of not more than 3V for a duration of up to ns at a frequency of 6KHz with maximum buck converter input voltage V IN =16 V Rev..1 page

5 BSG81NDI 1 Power dissipation (Q1) Power dissipation () P tot =f(t A ) 4) P tot =f(t A ) 4) P tot [W] 1.5 P tot [W] T A [ C] T A [ C] 3 Drain current (Q1) 4 Drain current () I D =f(t C ) I D =f(t C ) parameter: V GS 1 V parameter: V GS 1 V T C [ C] T C [ C] Rev..1 page

6 BSG81NDI 5 Safe operating area (Q1) 6 Safe operating area () I D =f(v DS ); T C =5 C; D = I D =f(v DS ); T C =5 C; D = parameter: t p parameter: t p µs 1 µs 1 1 µs 1 µs 1 1 µs 1 µs 1 ms ms 1 ms DC ms DC V DS [V] V DS [V] 7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance () Z thjc =f(t p ) Z thjc =f(t p ) parameter: D =t p /T parameter: D =t p /T Z thjc [K/W] Z thjc [K/W] single pulse single pulse t p [s] t p [s] Rev..1 page

7 BSG81NDI 9 Typ. output characteristics (Q1) 1 Typ. output characteristics () I D =f(v DS ); T j =5 C I D =f(v DS ); T j =5 C parameter: V GS parameter: V GS 16 1 V 4 V 4 1 V 4.5 V 3.5 V 3.3 V 4.5 V V 3 4 V 3 V V.8 V V.8 V V DS [V] V DS [V] 11 Typ. drain-source on resistance (Q1) 1 Typ. drain-source on resistance () R DS(on) =f(i D ); T j =5 C R DS(on) =f(i D ); T j =5 C parameter: V GS 1 parameter: V GS 3 V V V 3.5 V R DS(on) [mw] V 4 V 4.5 V R DS(on) [mw] 1 4 V 4.5 V 5 V 1 V 5 V 1 V Rev..1 page

8 13 Typ. transfer characteristics (Q1) 14 Typ. transfer characteristics () BSG81NDI I D =f(v GS ); V DS > I D R DS(on)max parameter: T j 16 I D =f(v GS ); V DS > I D R DS(on)max parameter: T j C 5 C 15 C 5 C V GS [V] V GS [V] 15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance () R DS(on) =f(t j ); I D = A; V GS =1 V R DS(on) =f(t j ); I D = A; V GS =1 V R DS(on) [mw] 4 3 typ R DS(on) [mw] 1 typ T j [ C] T j [ C] Rev..1 page

9 17 Typ. gate threshold voltage (Q1) 18 Typ. gate threshold voltage () BSG81NDI V GS(th) =f(t j ); V GS =V DS ; I D =5 µa V GS(th) =f(t j ); V GS =V DS ; I D =1 ma V GS(th) [V] V GS(th) [V] T j [ C] T j [ C] 19 Typ. capacitances (Q1) Typ. capacitances () C =f(v DS ); V GS = V; f =1 MHz C =f(v DS ); V GS = V; f =1 MHz Ciss Ciss 1 3 Coss C [pf] 1 Coss C [pf] Crss 1 Crss V DS [V] V DS [V] Rev..1 page

10 BSG81NDI 1 Forward characteristics of reverse diode (Q1) Forward characteristics of reverse diode () I F =f(v SD ) I F =f(v SD ) parameter: T j parameter: T j C 5 C I F [A] I F [A] C 5 C C 1 C V SD [V] V SD [V] 3 Avalanche characteristics (Q1) 4 Avalanche characteristics () I AS =f(t AV ); R GS =5 W parameter: T j(start) I AS =f(t AV ); R GS =5 W parameter: T j(start) C I AV [A] C 5 C I AV [A] C 1 C 15 C t AV [µs] t AV [µs] Rev..1 page

11 BSG81NDI 5 Typ. gate charge (Q1) 6 Typ. gate charge () V GS =f(q gate ); I D = A pulsed V GS =f(q gate ); I D = A pulsed parameter: V DD parameter: V DD V 1 V 8 V 6 V 6 5 V 1 V V GS [V] 4 V GS [V] Q gate [nc] Q gate [nc] 7 Drain-source breakdown voltage (Q1) 8 Typ. drain-source leakage current () V BR(DSS) =f(t j ); I D =1 ma I DSS =f(v DS ); V GS = V parameter: T j C C V BR(DSS) [V] I DSS [A] C C T j [ C] V DS [V] Rev..1 page

12 BSG81NDI Package Outline PG-TISON8-4 Rev..1 page

13 BSG81NDI Boardpads & Apertures PG-TISON8-4 All the dimensions in mm Rev..1 page

14 5VOptiMOSª5PowerMOSFET BSG81NDI RevisionHistory BSG81NDI Revision:16-3-4,Rev..1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Update package drawing TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust15 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 8176München,Germany 16InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 15 Rev..1,16-3-4

Product Summary V DS V. R DS(on),max V GS =10 V mw I D A. Parameter Symbol Conditions Value Unit T C =70 C, V GS =4.

Product Summary V DS V. R DS(on),max V GS =10 V mw I D A. Parameter Symbol Conditions Value Unit T C =70 C, V GS =4. BSG811ND Power Block Features Dual asymmetric N-channel OptiMOS 5 MOSFET Logic level (4.5V rated) Optimized for high performance buck converters Qualified according to JEDEC 1) for target applications