IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
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1 Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free according to IEC Qualified according to JEDEC for target applications Product Summary V RRM 600 V I F 45 V F 1.5 V T jmax 175 C Type Package Ordering Code IDP45E60 PG-TO Marking D45E60 Pin 1 PIN 2 PIN 3 C - Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak peak reverse reverse voltage voltage V RRM V R R M V V Continuous Continous forward current current I F T C = =25 C 25 C T C = =90 C 90 C I F Surge non repetitive forward current Surge non repetitive forward current T C = 25 C, t p = ms, sine halfwave I FSM I F S M T C =25 C, t p = ms, sine halfwave Maximum repetitive forward current T Maximum repetitive forward current C = 25 C, t p limited by t j,max, D = 0.5 T C =25 C, t p limited by T jmax, D=0.5 Power dissipation TPower C = 25 C dissipation T C = 90 C T C =25 C I FRM I F R M P tot P t o t 187 W Operating T C =90 C junction temperature T j Storage Operating temperature and storage temperature T j, T s t g stg C C Soldering temperature T S T 260 C 1.6mm wavesoldering, (0.063 in.) 1.6mm from (0.063 case for in.) from s S 260 case for s Rev.2.5 Page 1
2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient, leaded R thj SMD version, device on min. footprint R thj cm 2 cooling area 1) Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I R μ V R =600V, T j =25 C V R =600V, T j =150 C Forward voltage drop I F =45, T j =25 C I F =45, T j =150 C V F V Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.5 Page 2
3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time t rr ns V R =400V, I F =45, di F /dt=00/μs, T j =25 C V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C Peak reverse current V R =400V, I F = 45, di F /dt=00/μs, T j =25 C V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C Reverse recovery charge V R =400V, I F =45, di F /dt=00/μs, T j =25 C V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C Reverse recovery softness factor V R =400V, I F =45, di F /dt=00/μs, T j =25 C V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C nc S Rev.2.5 Page 3
4 1 Power dissipation P tot = f (T C ) parameter: T j 175 C 195 W Diode forward current I F = f(t C ) parameter: T j 175 C 80 Ptot IF C C 175 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) C 25 C 0 C 150 C V 2 90 IF VF , V 2.5 V F Rev.2.5 Page C 160 T j
5 5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 400V, T j = 125 C Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 400V, T j = 125 C 4000 trr ns Qrr nc , /μs 00 di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 400V, T j = 125 C /μs 00 di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 400V, T j = 125 C 8 Irr S , /μs 00 di F /dt Rev.2.5 Page /μs 00 di F /dt
6 9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W IDP45E60 0 ZthJC single pulse D = s 0 t p Rev.2.5 Page 6
7 Rev.2.5 Page 7
8 Published by Infineon Technologies G Munich, Germany München, Germany 2009 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.5 Page 8
Product Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology
Fast Switching Diode Features Product Summary V RRM 600 V I F 23 V F 1.5 V T jmax 175 C 600V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling
IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
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IDB30E120. Fast Switching Emitter Controlled Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM
Maximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
IDD06E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 6 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6
Surge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 18 A V F 1.65 V
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I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
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Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
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I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
Product Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
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SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2., 215-4-13 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
Power Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
OptiMOS 2 + OptiMOS -P 2 Small Signal Transistor
BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max
Power Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 213-1-15 Power Management & Multimarket 5 th Generation thinq! SiC Schottky Diode 1 Description Features
OptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
OptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
OptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
Power Management & Multimarket
SiC Silicon Carbide Diode 5 th Generation thinq! TM 65V SiC Schottky Diode Final Datasheet Rev. 2.2, 212-12-1 Power Management & Multimarket 5th Generation thinq! SiC Schottky Diode 1 Description ThinQ!
OptiMOS 3 M-Series Power-MOSFET
BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R
OptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
SIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4) 7.2 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-1 MSL1 up to 26 C peak reflow 175
OptiMOS TM Power-MOSFET
BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel
SPP20N60S5. Cool MOS Power Transistor V DS 600 V
SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
OptiMOS TM Power-MOSFET
BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (