thinq! SiC Schottky Diode

Transcription

1 SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery thinq! SiC Schottky Diode Product Summary V RRM 6 V Q c 3 nc I F 12 A PGTO2222. Type Package Ordering Code SDT12S6 PGTO2222. Q67S7 Marking D12S6 Pin 1 Pin 2 C A Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, T C = C I F 12 A RMS forward current, f=5hz I FRMS 17 Surge non repetitive forward current, sine halfwave I FSM 36 T C =25 C, t p =ms Repetitive peak forward current I FRM 9 T j =15 C, T C = C, D=.1 Non repetitive peak forward current I FMAX 12 t p =µs, T C =25 C i 2 t value, T C =25 C, t p =ms i 2 dt 6.8 A²s Repetitive peak reverse voltage V RRM 6 V Surge peak reverse voltage V RSM 6 Power dissipation, T C =25 C P tot 88.2 W Operating and storage temperature T j, T stg C Rev. 2.2 Page

2 SDT12S6 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc 1.7 K/W Thermal resistance, junction ambient, leaded R thja 62 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage I F =12A, T j =25 C I F =12A, T j =15 C Reverse current V R =6V, T j =25 C V R =6V, T j =15 C V F I R V µa 2 Rev. 2.2 Page

3 Electrical Characteristics, at T j = 25 C, unless otherwise specified SDT12S6 Parameter Symbol Values Unit AC Characteristics Total capacitive charge V R =V, I F =12A, di F /dt=2a/µs, T j =15 C Switching time V R =V, I F =12A, di F /dt=2a/µs, T j =15 C Total capacitance V R =1V, T C =25 C, f=1mhz V R =3V, T C =25 C, f=1mhz V R =6V, T C =25 C, f=1mhz min. typ. max. Q c 3 nc t rr n.a. ns C pf Rev. 2.2 Page

4 SDT12S6 1 Power dissipation P tot = f (T C ) 9 W 7 2 Diode forward current I F = f (T C ) parameter: T j 175 C 2 A 2 18 Ptot 6 5 IF C C 18 T C T C 3 Typ. forward characteristic I F = f (V F ) parameter: T j, tp = 35 µs Typ. forward power dissipation vs. average forward current P F(AV) =f(i F ) T C = C, d = t p /T IF 2 A C 125 C C 25 C C PF(AV) W d=.1 d=.2 d=.5 d= V 2.5 V F Rev. 2.2 Page A 16 I F(AV) 25217

5 SDT12S6 5 Typ. reverse current vs. reverse voltage I R =f(v R ) 2 µa 1 15 C 125 C C 25 C 6 Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W SDT12S6 IR ZthJC 1 D = single pulse V 6 V R 7 Typ. capacitance vs. reverse voltage C= f(v R ) parameter: T C = 25 C, f = 1 MHz 6 pf s t p 8 Typ. C stored energy E C =f(v R ) µj 9 7 C 35 EC V V R 2 3 V 6 V R Rev. 2.2 Page

6 SDT12S6 9 Typ. capacitive charge vs. current slope Q c =f(di F /dt) parameter: T j = 15 C nc 32 I F *2 I F 28 I F *.5 Qc A/µs di F /dt Rev. 2.2 Page

7 SDT12S6 PGTO2222 Rev. 2.2 Page

8 SDT12S6 Published by Infineon Technologies AG, Bereichs Kommunikation St.MartinStrasse 53, D8151 München Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page