TrenchStop Series I C

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1 Low Loss IGBT in TrenchStop and Fieldstop technology Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5µs Designed for : Freuency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior very high switching speed Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Qualified according to JEDEC 1 for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : G PGTO2473 C E Type V CE I C V CE(sat),Tj=25 C T j,max Marking Package 600V 75A 1.5V 175 C G75T60 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 600 V DC collector current, limited by T jmax T C = 25 C T C = 100 C I C A Pulsed collector current, t p limited by T jmax I Cpuls 225 Turn off safe operating area (V CE 600V, T j 175 C) 225 Gateemitter voltage V GE ±20 V Short circuit withstand time 2) t SC 5 µs V GE = 15V, V CC 400V, T j 150 C Power dissipation T C = 25 C P tot 428 W Operating junction temperature T j C Storage temperature T stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s JSTD020 and JESD022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.5 Nov 09

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R thjc 0.35 K/W junction case Thermal resistance, junction ambient R thja 40 Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =0.2mA 600 Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C =75A T j =25 C T j =175 C Gateemitter threshold voltage V GE(th) I C =1.2mA,V CE =V GE Zero gate voltage collector current I CES V CE =600V, V GE =0V T j =25 C T j =175 C Gateemitter leakage current I GES V CE =0V,V GE =20V 100 na Transconductance g fs V CE =20V, I C =75A 41 S Integrated gate resistor R Gint Ω Unit V µa Dynamic Characteristic Input capacitance C iss V CE =25V, 4620 Output capacitance C oss V GE =0V, 288 Reverse transfer capacitance f=1mhz 137 C rss Gate charge Q Gate V CC =480V, I C =75A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) I C(SC) V GE =15V,t SC 5µs V CC = 400V, T j 150 C pf 470 nc L E 13 nh A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.5 Nov 09

3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. Typ. max. IGBT Characteristic Turnon delay time t d(on) T j =25 C, 33 Rise time t V CC =400V,I C =75A, r 36 V GE =0/15V, Turnoff delay time t d(off) R 330 G =5Ω, Fall time t f L 2) σ =100nH, 35 Turnon energy 1) E C 2) σ =39pF on 2.0 Energy losses include Turnoff energy E off tail and diode 2.5 Total switching energy reverse recovery. 4.5 E ts Unit ns mj Switching Characteristic, Inductive Load, at T j =175 C Parameter Symbol Conditions Value min. Typ. max. IGBT Characteristic Turnon delay time t d(on) T j =175 C, 32 Rise time t V CC =400V,I C =75A, r 37 V GE =0/15V, Turnoff delay time t d(off) R 363 G = 5Ω Fall time t f L 2) σ =100nH, 38 Turnon energy 1) E C 2) σ =39pF on 2.9 Energy losses include Turnoff energy E off tail and diode 2.9 Total switching energy reverse recovery. 5.8 E ts Unit ns mj 1) Includes Reverse Recovery Losses from IKW75N60T due to dynamic test circuit in Figure E. 2) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.5 Nov 09

4 200A 100A t p =1µs 10µs IC, COLLECTOR CURRENT 50A 00A 50A T C =80 C T C =110 C I c I c IC, COLLECTOR CURRENT 10A 1A DC 50µs 1ms 10ms 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching freuency (T j 175 C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 5Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 175 C; V GE =15V) 400W 350W 120A Ptot, POWER DISSIPATION 300W 250W 200W 150W 100W IC, COLLECTOR CURRENT 90A 60A 30A 50W 0W 25 C 50 C 75 C 100 C 125 C 150 C 0A 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 175 C) T C, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (V GE 15V, T j 175 C) Power Semiconductors 4 Rev. 2.5 Nov 09

5 120A V GE =20V 120A V GE =20V IC, COLLECTOR CURRENT 90A 60A 30A 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 90A 60A 30A 15V 13V 11V 9V 7V 0A 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0A 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 175 C) IC, COLLECTOR CURRENT 80A 60A 40A 20A T J =175 C 25 C 0A 0V 2V 4V 6V 8V VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 2.5V 2.0V 1.5V 1.0V 0.5V I C =150A I C =75A I C =37.5A 0.0V 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V) T J, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2.5 Nov 09

6 t d(off) t, SWITCHING TIMES 100ns t f t, SWITCHING TIMES 100ns t d(off) t f t r t d(on) t d(on) t r 10ns 0A 40A 80A 120A 10ns 5Ω 10Ω 15Ω I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T J =175 C, V CE = 400V, V GE = 0/15V, R G = 5Ω, R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T J = 175 C, V CE = 400V, V GE = 0/15V, I C = 75A, 7V t, SWITCHING TIMES 100ns t r t f t d(off) t d(on) VGE(th), GATEEMITT TRSHOLD VOLTAGE 6V 5V 4V 3V 2V 1V min. typ. max. 25 C 50 C 75 C 100 C 125 C 150 C T J, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 75A, R G =5Ω, 0V 50 C 0 C 50 C 100 C 150 C T J, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 1.2mA) Power Semiconductors 6 Rev. 2.5 Nov 09

7 E, SWITCHING ENERGY LOSSES 12.0mJ 8.0mJ 4.0mJ ) E on and E ts include losses due to diode recovery E ts E on E off E, SWITCHING ENERGY LOSSES ) E on and E ts include losses due to diode recovery 8.0mJ E ts 6.0mJ 4.0mJ E on 2.0mJ E off 0.0mJ 0A 20A 40A 60A 80A 100A 120A 140A I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T J = 175 C, V CE = 400V, V GE = 0/15V, R G = 5Ω, 0.0mJ 0Ω 5Ω 10Ω 15Ω R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T J = 175 C, V CE = 400V, V GE = 0/15V, I C = 75A, E, SWITCHING ENERGY LOSSES 5.0mJ 4.0mJ 3.0mJ 2.0mJ 1.0mJ E off E on ) E on and E ts include losses due to diode recovery E ts E, SWITCHING ENERGY LOSSES 8mJ 6mJ 4mJ 2mJ ) E on and E ts include losses due to diode recovery E ts E on E off 0.0mJ 25 C 50 C 75 C 100 C 125 C 150 C T J, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 75A, R G = 5Ω, 0mJ 300V 350V 400V 450V 500V 550V V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, T J = 175 C, V GE = 0/15V, I C = 75A, R G = 5Ω, Power Semiconductors 7 Rev. 2.5 Nov 09

8 C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 120V 480V c, CAPACITANCE 1nF 100pF C oss C rss 0V 0nC 100nC 200nC 300nC 400nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =75 A) 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) 12µs IC(sc), short circuit COLLECTOR CURRENT 1000A 750A 500A 250A 0A 12V 14V 16V 18V tsc, SHORT CIRCUIT WITHSTAND TIME 10µs 8µs 6µs 4µs 2µs 0µs 10V 11V 12V 13V 14V V GE, GATEEMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (V CE 400V, T j 150 C) V GE, GATEEMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gateemitter voltage (V CE =600V, start at T J =25 C, T Jmax <150 C) Power Semiconductors 8 Rev. 2.5 Nov 09

9 D=0.5 ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W R,(K/W) τ, (s) R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 single pulse 10 3 K/W 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = t p / T) Power Semiconductors 9 Rev. 2.5 Nov 09

10 Power Semiconductors 10 Rev. 2.5 Nov 09

11 i,v di F /dt t =t + t S F rr Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal euivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Power Semiconductors 11 Rev. 2.5 Nov 09

12 Published by Infineon Technologies AG Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical reuirements, components may contain dangerous substances. For information on the types in uestion, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.5 Nov 09

IGW25T120. TrenchStop Series

IGW25T120. TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications