TRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
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1 Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Positive temperature coefficient in V CE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery antiparallel Emitter Controlled HE diode Qualified according to JEDEC 1) for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : Applications: Freuency Converters Uninterrupted Power Supply G PGTO2473 C E Type V CE I C V CE(sat),Tj=25 C T j,max Marking Package 600V 75A 1.5V 175 C K75T60 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage, T j 25 C V C E 600 V DC collector current, limited by T jmax T C = 25 C 80 2) I C T C = 100 C 75 Pulsed collector current, t p limited by T jmax I C p ul s 225 Turn off safe operating area V CE = 600V, T j = 175 C, t p = 1µs 225 A Diode forward current, limited by T jmax T C = 25 C 80 2) I F T C = 100 C 75 Diode pulsed current, t p limited by T jmax I F p ul s 225 Gateemitter voltage V G E 20 V Short circuit withstand time 3) V GE = 15V, V CC 400V, T j 150 C t S C 5 s Power dissipation T C = 25 C P t o t 428 W Operating junction temperature T j Storage temperature T s t g C Soldering temperature, 1.6mm (0.063 in.) from case for 10s T s o l d 260 1) JSTD020 and JESD022 2) Value limited by bondwire 3) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev
2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R t h J C 0.35 K/W junction case Diode thermal resistance, R t h J C D 0.6 junction case Thermal resistance, junction ambient R t h J A 40 Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Value min. Typ. max. Collectoremitter breakdown voltage V ( B R ) C E S V G E =0V, I C =0.2mA 600 V Collectoremitter saturation voltage V C E ( s a t ) V G E = 15V, I C =75A T j =25 C T j =175 C Diode forward voltage V F V G E =0V, I F =75A T j =25 C T j =175 C Gateemitter threshold voltage V G E ( t h) I C =1.2mA,V C E =V G E Zero gate voltage collector current I C E S V C E =600V, V G E =0V T j =25 C T j =175 C Gateemitter leakage current I G E S V C E =0V,V G E =20V 100 na Transconductance g f s V C E =20V, I C =75A 41 S Integrated gate resistor R G i n t Ω Unit µa Dynamic Characteristic Input capacitance C i s s V C E =25V, 4620 pf Output capacitance C o s s V G E =0V, 288 Reverse transfer capacitance C r s s f=1mhz 137 Gate charge Q G a t e V C C =480V, I C =75A Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current Allowed number of short circuits: <1000; time between short circuits: >1s. V G E =15V 470 nc L E 13 nh I C ( S C ) V G E =15V,t S C 5 s V C C = 400V, T j 150 C 690 A IFAG IPC TD VLS 2 Rev
3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions IGBT Characteristic Value min. typ. max. Turnon delay time t d ( o n ) T j=25 C, 33 ns Rise time t r V C C=400V,I C=75A, V G E=0/15V, 36 Turnoff delay time t d ( o f f ) r G=5, L =100nH, 330 Fall time t f C =39pF 35 Turnon energy E o n L, C from Fig. E Energy losses include 2.0 mj Turnoff energy E o f f tail and diode reverse 2.5 recovery. Total switching energy E t s 4.5 AntiParallel Diode Characteristic Diode reverse recovery time t r r T j =25 C, Diode reverse recovery charge Q r r V R =400V, I F =75A, 2.4 µc Diode peak reverse recovery current I r r m di F /dt=146/ s 38.5 A Unit 121 ns Diode peak rate of fall of reverse di r r /dt 921 A/ s recovery current during t b Switching Characteristic, Inductive Load, at T j =175 C Parameter Symbol Conditions IGBT Characteristic Value min. typ. max. Turnon delay time t d ( o n ) T j=175 C, 32 ns Rise time t r V C C=400V,I C=75A, V G E=0/15V, 37 Turnoff delay time t d ( o f f ) r G=5, L =100nH, 363 Fall time t f C =39pF 38 Turnon energy E o n L, C from Fig. E Energy losses include 2.9 mj Turnoff energy E o f f tail and diode reverse 2.9 recovery. Total switching energy E t s 5.8 AntiParallel Diode Characteristic Diode reverse recovery time t r r T j =175 C Diode reverse recovery charge Q r r V R =400V, I F =75A, 5.8 µc Diode peak reverse recovery current I r r m di F /dt=146/ s 56.2 A Unit 182 ns Diode peak rate of fall of reverse di r r /dt 1013 A/ s recovery current during t b IFAG IPC TD VLS 3 Rev
4 20 IC, COLLECTOR CURRENT I c T C =80 C T C =110 C IC, COLLECTOR CURRENT I c 10Hz 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching freuency (T j 175 C, D = 0.5, V CE = 400V, V GE = 0/15V, r G = 5 ) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 175 C; V GE =0/15V) 400W 350W 12 Ptot, POWER DISSIPATION 300W 250W 200W 150W 100W IC, COLLECTOR CURRENT W 0W 25 C 50 C 75 C 100 C 125 C 150 C 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 175 C) T C, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (V GE 15V, T j 175 C) IFAG IPC TD VLS 4 Rev
5 12 V GE =20V 12 V GE =20V IC, COLLECTOR CURRENT V 13V 11V 9V 7V IC, COLLECTOR CURRENT V 13V 11V 9V 7V 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 175 C) IC, COLLECTOR CURRENT =175 C 25 C 0V 2V 4V 6V 8V VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 2.5V 2.0V 1.5V 1.0V 0.5V I C =15 I C =75A I C =37.5A 0.0V 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V), JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) IFAG IPC TD VLS 5 Rev
6 t d(off) t, SWITCHING TIMES 100ns t f t, SWITCHING TIMES 100ns t d(off) t f t r t d(on) t d(on) t r 10ns ns I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, =175 C, V CE = 400V, V GE = 0/15V, r G = 5Ω, R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, I C = 75A, 7V t, SWITCHING TIMES 100ns t r t f t d(off) t d(on) VGE(th), GATEEMITT TRSHOLD VOLTAGE 6V 5V 4V 3V 2V 1V min. typ. max. 25 C 50 C 75 C 100 C 125 C 150 C, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 75A, r G =5Ω, 0V 50 C 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 1.2mA) IFAG IPC TD VLS 6 Rev
7 E, SWITCHING ENERGY LOSSES 12.0mJ 8.0mJ 4.0mJ ) E on and E ts include losses due to diode recovery E ts E on E off E, SWITCHING ENERGY LOSSES ) E on and E ts include losses due to diode recovery 8.0mJ E ts 6.0mJ 4.0mJ E on 2.0mJ E off 0.0mJ I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, r G = 5Ω, 0.0mJ R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, I C = 75A, E, SWITCHING ENERGY LOSSES 5.0mJ 4.0mJ 3.0mJ 2.0mJ 1.0mJ E off E on ) E on and E ts include losses due to diode recovery E ts E, SWITCHING ENERGY LOSSES 8mJ 6mJ 4mJ 2mJ ) E on and E ts include losses E ts due to diode recovery E on E off 0.0mJ 25 C 50 C 75 C 100 C 125 C 150 C, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 75A, r G = 5Ω, 0mJ 300V 350V 400V 450V 500V 550V V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, = 175 C, V GE = 0/15V, I C = 75A, r G = 5Ω, IFAG IPC TD VLS 7 Rev
8 C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 120V 480V c, CAPACITANCE 1nF 100pF C oss C rss 0V 0nC 100nC 200nC 300nC 400nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =75 A) 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) 12µs IC(sc), short circuit COLLECTOR CURRENT tsc, SHORT CIRCUIT WITHSTAND TIME 10µs 8µs 6µs 4µs 2µs 0µs 10V 11V 12V 13V 14V V GE, GATEEMITTER VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (V CE 400V, T j 150 C) V GE, GATE EMITTER VOLTAGE Figure 20. Short circuit withstand time as a function of gateemitter voltage (V CE =400V, start at =25 C, max <150 C) IFAG IPC TD VLS 8 Rev
9 D=0.5 D=0.5 ZthJC, TRANSIENT THERMAL IMPEDANCE 10 1 K/W 10 2 K/W R, ( K / W ), ( s ) R 1 R 2 single pulse C 1= 1/R 1 C 2= 2/R K/W 1µs 10µs 100µs 1ms 10ms 100ms ZthJC, TRANSIENT THERMAL IMPEDANCE 10 1 K/W 10 2 K/W ns 1µs single pulse R, ( K / W ), ( s ) R 1 R 2 C 1= 1/R 1 C 2= 2/R 2 10µs 100µs 1ms 10ms100ms t P, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = t p / T) t P, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=t P /T) trr, REVERSE RECOVERY TIME 200ns 150ns 100ns 50ns =175 C =25 C Qrr, REVERSE RECOVERY CHARGE 5µC 4µC 3µC 2µC 1µC =175 C =25 C 0ns 100/µs 150/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (V R =400V, I F =75A, 0µC 100/µs 150/µs di F /dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (V R = 400V, I F =75A, IFAG IPC TD VLS 9 Rev
10 6 =175 C 120/µs =175 C Irr, REVERSE RECOVERY CURRENT =25 C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 100/µs 80/µs 60/µs 40/µs 20/µs =25 C 100/µs 150/µs /µs 100/µs 150/µs di F /dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (V R = 400V, I F = 75A, di F /dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R =400V, I F =75A, 20 =25 C 2.0V I F = C IF, FORWARD CURRENT VF, FORWARD VOLTAGE 1.5V 1.0V 0.5V 75A 37.5A 0V 1V 2V 0.0V 0 C 50 C 100 C 150 C V F, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature IFAG IPC TD VLS 10 Rev
11 IFAG IPC TD VLS 11 Rev
12 i,v di F /dt t =t Q =Q + t r r S F + Q r r S F t r r I F t S t F Q S Q F 10% I r r m t I r r m di 90% I r r m r r /dt V R Figure C. Definition of diodes switching characteristics T (t) j 1 r1 2 r 2 r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal euivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 12 Rev
13 Published by Infineon Technologies AG Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical reuirements, components may contain dangerous substances. For information on the types in uestion, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 13 Rev
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