IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
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1 Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy paralleling Pbfree lead plating; RoHS compliant Halogenfree according to IEC Qualified according to JEDEC for target applications Type Package Ordering Code PGTO2202 Marking D30E120 Pin 1 PIN 2 PIN 3 C Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage V RRM 1200 V Continous forward current I F T C =25 C T C =90 C Surge non repetitive forward current I FSM 2 T C =25 C, t p = ms, sine halfwave Maximum repetitive forward current I FRM 76.5 T C =25 C, t p limited by T jmax, D=0.5 Power dissipation P tot W T C =25 C T C =90 C Operating and storage temperature T j, T stg C Soldering temperature T S 260 C wavesoldering, 1.6mm (0.063 in.) from case for s Rev.2.3 Page
2 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc 0.9 K/W Thermal resistance, junction ambient, leaded R thj 62 SMD version, device on min. 6 cm 2 cooling area 1) R thj Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current V R =1200V, T j =25 C V R =1200V, T j =150 C Forward voltage drop I F =30, T j =25 C I F =30, T j =150 C I R V F µ V Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 Page
3 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time V R =800V, I F =30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C Peak reverse current V R =800V, I F = 30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C Reverse recovery charge V R =800V, I F =30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C Reverse recovery softness factor S V R =800V, I F =30, di F /dt=850/µs, T j =25 C V R =800V, I F =30, di F /dt=850/µs, T j =125 C V R =800V, I F =30, di F /dt=850/µs, T j =150 C t rr I rrm Q rr ns nc Rev.2.3 Page
4 1 Power dissipation P tot = f (T C ) parameter: T j 150 C W Diode forward current I F = f(t C ) parameter: T j 150 C Ptot 90 IF C C 150 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) IF C 25 C 0 C 150 C VF V V 3 V F Rev.2.3 Page C 160 T j
5 5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 800V, T j = 125 C 10 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 800V, T j = 125 C 6500 ns nc 60 trr Qrr /µs 00 di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 800V, T j = 125 C /µs 00 di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 800V, T j = 125 C 18 Irr S /µs 00 di F /dt Rev.2.3 Page /µs 00 di F /dt
6 9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W 0 ZthJC single pulse D = s 0 t p Rev.2.3 Page
7 TO2202 Rev.2.3 Page
8 Published by Infineon Technologies G Munich, Germany München, Germany 2009 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 Page
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