SKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Transcription

1 Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 s Designed for: Motor controls, Inverter NPTTechnology for 600V applications offers: very tight parameter distribution high ruggedness, temperature stable behaviour parallel switching capability Very soft, fast recovery antiparallel Emitter Controlled Diode Isolated TO220, 2.5kV, 60s Pbfree lead plating; RoHS compliant Qualified according to JEDEC 1 for target applications Complete product spectrum and PSpice Models : PGTO22031 (TO220AB) G C E PGTO / 111 (FullPAK) Type V CE I C V CE(sat) T j Marking Package 600V 6A 2.3V 150 C K06N60 PGTO V 5A 2.3V 150 C K06N60 PGTO / JSTD020 and JESD022 1 Rev

2 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V C E V DC collector current T C = 25 C T C = 100 C I C 12 Pulsed collector current, t p limited by T jmax I C p ul s Turn off safe operating area V CE 600V, T j 150 C Diode forward current T C = 25 C T C = 100 C Diode pulsed current, t p limited by T jmax p ul s Gateemitter voltage V G E V Short circuit withstand time 2 V GE = 15V, V CC 600V, T j 150 C Power dissipation T C = 25 C t S C P t o t Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220) 3 M Nm Operating junction and storage temperature T j, T s t g C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 6 A s W T s C 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 3 Maximum mounting processes: 3 2 Rev

3 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient R t h J C K/W R t h J C D R t h J A PGTO PGTO / Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Unit Static Characteristic Collectoremitter breakdown voltage V ( B R ) C E S V G E =0V, I C =500 A 600 V Collectoremitter saturation voltage V C E ( s a t ) V G E = 15V, I C =6A T j =25 C T j =150 C Diode forward voltage V F V G E =0V, =6A T j =25 C T j =150 C Gateemitter threshold voltage V G E ( t h) I C =250 A,V C E =V G E Zero gate voltage collector current I C E S V C E =600V,V G E =0V T j =25 C T j =150 C Gateemitter leakage current I G E S V C E =0V,V G E =20V 100 na Transconductance g f s V C E =20V, I C =6A 4.2 S Dynamic Characteristic Input capacitance C i s s V C E =25V, Output capacitance C o s s V G E =0V, Reverse transfer capacitance C r s s f=1mhz Gate charge Q G a t e V C C =480V, I C =6A Internal emitter inductance measured 5mm (0.197 in.) from case V G E =15V Short circuit collector current 2) I C ( S C ) V G E =15V,t S C 10 s V C C 600V, T j 150 C A pf nc L E 7 nh 60 A 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 3 Rev

4 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions IGBT Characteristic Value min. typ. max. Turnon delay time t d ( o n ) T j =25 C, ns Rise time t r V C C =400V,I C =6A, V G E =0/15V, Turnoff delay time t d ( o f f ) R G =50, ) Fall time t f L =180nH, ) C =250pF Turnon energy E o n mj Energy losses include Turnoff energy E o f f tail and diode Total switching energy E t s reverse recovery AntiParallel Diode Characteristic Diode reverse recovery time t r r t S t F T j =25 C, V R =200V, =6A, di F /dt=200a/ s Diode reverse recovery charge Q r r 200 nc Diode peak reverse recovery current I r r m 2.8 A Diode peak rate of fall of reverse di r r /dt 180 A/ s recovery current during t b Unit ns Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions IGBT Characteristic Value min. typ. max. Turnon delay time t d ( o n ) T j =150 C ns Rise time t r V C C =400V,I C =6A, V G E =0/15V, Turnoff delay time t d ( o f f ) R G =50, Fall time t L ) f =180nH, C ) =250pF Turnon energy E o n Energy losses include Turnoff energy E o f f tail and diode mj Total switching energy E t s reverse recovery AntiParallel Diode Characteristic Diode reverse recovery time t r r t S t F T j =150 C V R =200V, =6A, di F /dt=200a/ s Diode reverse recovery charge Q r r 500 nc Diode peak reverse recovery current I r r m 5.0 A Diode peak rate of fall of reverse di r r /dt 200 A/ s recovery current during t b Unit ns 1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 4 Rev

5 30A I c t p =2 s 10A 15 s IC, COLLECTOR CURRENT 20A 10A T C =80 C T C =110 C I c 0A 10Hz 100Hz 1kHz 10kHz 100kHz IC, COLLECTOR CURRENT 1A 50 s 200 s 1ms DC 0.1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 50 ) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C) 80W Ptot, POWER DISSIPATION 60W 40W 20W IC, COLLECTOR CURRENT 10A 5A 0W 25 C 50 C 75 C 100 C 125 C 0A 25 C 50 C 75 C 100 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) 5 Rev

6 20A 20A 15A 15A IC, COLLECTOR CURRENT 10A 5A V GE =20V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT 10A 5A V GE =20V 15V 13V 11V 9V 7V 5V 0A 0V 1V 2V 3V 4V 5V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristics (T j = 25 C) 0A 0V 1V 2V 3V 4V 5V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristics (T j = 150 C) IC, COLLECTOR CURRENT 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A T j =+25 C 55 C +150 C 0A 0V 2V 4V 6V 8V 10V VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V I C = 12A I C = 6A 50 C 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristics (V CE = 10V) T j, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) 6 Rev

7 t d(off) t d(off) t, SWITCHING TIMES 100ns t f t, SWITCHING TIMES 100ns t f t d(on) t d(on) t r t r 10ns 0A 3A 6A 9A 12A 15A I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, R G = 50, 10ns R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, I C = 6A, 5.5V t, SWITCHING TIMES 100ns t d(off) t f t d(on) t r 10ns 0 C 50 C 100 C 150 C VGE(th), GATEEMITTER THRESHOLD VOLTAGE 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V max. typ. min. 50 C 0 C 50 C 100 C 150 C T j, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V, I C = 6A, R G = 50, T j, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 0.25mA) 7 Rev

8 0.8mJ *) E on and E ts include losses due to diode recovery. 0.6mJ *) E on and E ts include losses due to diode recovery. E ts * E ts * E, SWITCHING ENERGY LOSSES 0.6mJ 0.4mJ 0.2mJ E on * E off E, SWITCHING ENERGY LOSSES 0.4mJ 0.2mJ E off E on * 0.0mJ 0A 3A 6A 9A 12A 15A I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, R G = 50, 0.0mJ R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T j = 150 C, V CE = 400V, V GE = 0/+15V, I C = 6A, 0.4mJ *) E on and E ts include losses due to diode recovery. E ts * E, SWITCHING ENERGY LOSSES 0.3mJ 0.2mJ 0.1mJ E on * E off 0.0mJ 0 C 50 C 100 C 150 C T j, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V, I C = 6A, R G = 50, 8 Rev

9 25V 1nF 20V C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 120V 480V C, CAPACITANCE 100pF C oss C rss 0V 0nC 15nC 30nC 45nC 10pF 0V 10V 20V 30V Q GE, GATE CHARGE Figure 16. Typical gate charge (I C = 6A) V CE, COLLECTOREMITTER VOLTAGE Figure 17. Typical capacitance as a function of collectoremitter voltage (V GE = 0V, f = 1MHz) 25 s 100A tsc, SHORT CIRCUIT WITHSTAND TIME 20 s 15 s 10 s 5 s 0 s 10V 11V 12V 13V 14V 15V IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 80A 60A 40A 20A 0A 10V 12V 14V 16V 18V 20V V GE, GATEEMITTER VOLTAGE Figure 18. Short circuit withstand time as a function of gateemitter voltage (V CE = 600V, start at T j = 25 C) V GE, GATEEMITTER VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (V CE 600V, T j = 150 C) 9 Rev

10 500ns 1000nC trr, REVERSE RECOVERY TIME 400ns 300ns 200ns 100ns = 3A = 12A = 6A Qrr, REVERSE RECOVERY CHARGE 800nC 600nC 400nC 200nC = 12A = 6A = 3A 0ns 50A/ s 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s di F /dt, DIODE CURRENT SLOPE Figure 20. Typical reverse recovery time as a function of diode current slope (V R = 200V, T j = 125 C, 0nC 50A/ s 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s di F /dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery charge as a function of diode current slope (V R = 200V, T j = 125 C, 12A 600A/ s 10A 500A/ s Irr, REVERSE RECOVERY CURRENT 8A 6A 4A 2A = 6A = 12A = 3A d irr/ d t, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 400A/ s 300A/ s 200A/ s 100A/ s 0A 50A/ s 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s di F /dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery current as a function of diode current slope (V R = 200V, T j = 125 C, 0A/ s 50A/ s 150A/ s 250A/ s 350A/ s 450A/ s 550A/ s di F /dt, DIODE CURRENT SLOPE Figure 23. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R = 200V, T j = 125 C, 10 Rev

11 2.0V 12A IF, FORWARD CURRENT 10A 8A 6A 4A 150 C 100 C 25 C VF, FORWARD VOLTAGE 1.5V = 12A = 6A 2A 55 C 0A 0.0V 0.5V 1.0V 1.5V 2.0V V F, FORWARD VOLTAGE Figure 24. Typical diode forward current as a function of forward voltage 1.0V 40 C 0 C 40 C 80 C 120 C T j, JUNCTION TEMPERATURE Figure 25. Typical diode forward voltage as a function of junction temperature 10 1 K/W D=0.5 ZthJCD, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10 1 K/W single pulse R, ( K / W ), ( s ) * * * *10 5 R 1 R 2 C 1= 1/R 1 C 2= 2/R 2 ZthJCD, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10 1 K/W D= single pulse R, ( K / W ), ( s ) * * *10 4 R 1 R 2 C 1= 1/R 1 C 2= 2/R K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s 10 2 K/W 10µs 100µs 1ms 10ms 100ms 1s 10s t p, PULSE WIDTH Figure 26. Diode transient thermal impedance as a function of pulse width (D = t p / T) t p, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = t p / T) 11 Rev

12 10 1 K/W ZthJC, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10 1 K/W D= K/W single pulse R, ( K / W ), ( s ) E E4 R 1 R 2 C 1= 1/R 1 C 2= 2/R K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s t p, PULSE WIDTH Figure 28. IGBT transient thermal impedance as a function of pulse width (D = t p / T) ZthJC, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10 1 K/W 10 2 K/W D= R, ( K / W ), ( s ) * * *10 4 R 1 R 2 single pulse C 1= 1/R 1 C 2= 2/R K/W 1µs 10µs 100µs 1ms 10ms 100ms 1s 10s t p, PULSE WIDTH Figure 29. IGBT transient thermal impedance as a function of pulse width (D = t p / T) 12 Rev

13 PGTO Rev

14 Please refer to mounting instructions 14 Rev

15 i,v di F /dt t =t Q =Q + t r r S F + Q r r S F t r r I F t S t F Q S Q F 10% I r r m t I r r m di 90% I r r m r r /dt V R Figure C. Definition of diodes switching characteristics T (t) j 1 r1 2 r 2 r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =250pF. 15 Rev

16 Published by Infineon Technologies AG Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 16 Rev