IGP03N120H2 IGW03N120H2
|
|
- Norma Hill
- 5 years ago
- Views:
Transcription
1 HighSpeed 2Technology Designed for: SMPS Lamp Ballast ZVSConverter optimised for softswitching / resonant topologies G C E 2 nd generation HighSpeedTechnology for 1200V applications offers: loss reduction in resonant circuits temperature stable behavior parallel switching capability tight parameter distribution E off optimized for =3A PGTO22031 Qualified according to JEDEC 2 for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : PGTO2473 Type V CE E off T j Marking Package 1200V 3A 0.15mJ 150 C G03H1202 PGTO2473 IGP03N120H2 1200V 3A 0.15mJ 150 C G03H1202 PGTO22031 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 1200 V Triangular collector current T C = 25 C, f = 140kHz T C = 100 C, f = 140kHz Pulsed collector current, t p limited by T jmax puls 9.9 Turn off safe operating area 9.9 V CE 1200V, T j 150 C Gateemitter voltage V GE ±20 V Power dissipation T C = 25 C P tot 62.5 W Operating junction and storage temperature T j, T stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 A C 2 JSTD020 and JESD022 Power Semiconductors 1 Rev. 2.6 Febr. 08
2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient R thjc 2.0 R thja PGTO PGTO K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, =300μA 1200 Collectoremitter saturation voltage V CE(sat) V GE = 15V, =3A T j =25 C T j =150 C 2.5 V GE = 10V, =3A, T j =25 C 2.4 Gateemitter threshold voltage V GE(th) =90μA,V CE =V GE Zero gate voltage collector current ES V CE =1200V,V GE =0V T j =25 C T j =150 C Gateemitter leakage current I GES V CE =0V,V GE =20V 100 na Transconductance g fs V CE =20V, =3A 2 S Dynamic Characteristic Input capacitance C iss V CE =25V, 205 Output capacitance C oss V GE =0V, 24 Reverse transfer capacitance f=1mhz 7 C rss Gate charge Q Gate V CC =960V, =3A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case L E PGTO22031 PGTO Unit V μa pf 22 nc 7 13 nh Power Semiconductors 2 Rev. 2.6 Febr. 08
3 Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =25 C, 9.2 Rise time t r V CC =800V, =3A, 5.2 Turnoff delay time t d(off) V GE =15V/0V, 281 Fall time t f R G =82Ω, 29 L 2) σ =180nH, Turnon energy E on 0.14 C 2) σ =40pF Turnoff energy E off Energy losses include 0.15 Total switching energy E ts tail and diode 3) 0.29 reverse recovery. Unit ns mj Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =150 C 9.4 Rise time t r V CC =800V, 6.7 Turnoff delay time t d(off) =3A, 340 Fall time t f V GE =15V/0V, 63 Turnon energy E R G =82Ω, on 0.22 L 2) σ =180nH, Turnoff energy E off C 2) 0.26 σ =40pF Total switching energy E ts Energy losses include 0.48 tail and diode 3) reverse recovery. Unit ns mj Switching Energy ZVT, Inductive Load Parameter Symbol Conditions IGBT Characteristic Turnoff energy E off V CC =800V, =3A, V GE =15V/0V, R G =82Ω, C 2) r =4nF T j =25 C T j =150 C Value min. typ. max Unit mj 2) Leakage inductance L σ and stray capacity C σ due to dynamic test circuit in figure E 3) Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.6 Febr. 08
4 1 I c 1 t p =1μs 1 5μs IC, COLLECTOR CURRENT 8A 6A 4A I c T C =80 C T C =110 C IC, COLLECTOR CURRENT 1A 0,1A 10μs 50μs 100μs 500μs DC 10Hz 100Hz 1kHz 10kHz 100kHz,01A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 800V, V GE = +15V/0V, R G = 82Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C) 60W 1 50W 1 Ptot, POWER DISSIPATION 40W 30W 20W 10W IC, COLLECTOR CURRENT 8A 6A 4A 0W 25 C 50 C 75 C 100 C 125 C 25 C 50 C 75 C 100 C 125 C 150 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 4 Rev. 2.6 Febr. 08
5 1 1 9A 8A 8A IC, COLLECTOR CURRENT 6A 4A V GE =15V 12V 10V 8V 6V IC, COLLECTOR CURRENT 7A 6A 5A 4A 3A V GE =15V 12V 10V 8V 6V 1A 0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristics (T j = 25 C) V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristics (T j = 150 C) IC, COLLECTOR CURRENT 1 1 8A 6A 4A T j =+150 C T j =+25 C 3V 5V 7V 9V VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE 3V 2V 1V =6A =3A =1.5A 0V 50 C 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristics (V CE = 20V) T j, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2.6 Febr. 08
6 1000ns 1000ns t d(off) t d(off) t, SWITCHING TIMES 100ns 10ns t f t d(on) t, SWITCHING TIMES 100ns 10ns t f t d(on) t r t r 1ns 4A 1ns 0Ω 50Ω 100Ω 150Ω, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, R G = 82Ω, dynamic test circuit in Fig.E) R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, = 3A, dynamic test circuit in Fig.E) 1000ns 5V t, SWITCHING TIMES 100ns 10ns t f t d(off) t d(on) t r 1ns 25 C 50 C 75 C 100 C 125 C 150 C VGE(th), GATEEMITTER THRESHOLD VOLTAGE 4V 3V 2V 1V max. typ. min. 0V 50 C 0 C 50 C 100 C 150 C T j, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V, = 3A, R G = 82Ω, dynamic test circuit in Fig.E) T j, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature ( = 0.09mA) Power Semiconductors 6 Rev. 2.6 Febr. 08
7 1.0mJ 1 ) E on and E ts include losses due to diode recovery. E ts 1 0.7mJ 1 ) E on and E ts include losses due to diode recovery. E ts 1 E, SWITCHING ENERGY LOSSES 0.5mJ E off E on 1 E, SWITCHING ENERGY LOSSES 0.6mJ 0.5mJ 0.4mJ 0.3mJ 0.2mJ E off E on 1 0.0mJ 4A 0Ω 50Ω 100Ω 150Ω 200Ω 250Ω, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, R G = 82Ω, dynamic test circuit in Fig.E ) R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, = 3A, dynamic test circuit in Fig.E ) E, SWITCHING ENERGY LOSSES 0.5mJ 0.4mJ 0.3mJ 0.2mJ 0.1mJ 1 ) E on and E ts include losses due to diode recovery. E ts 1 E off E on 1 25 C 80 C 125 C 150 C Eoff, TURN OFF SWITCHING ENERGY LOSS 0.16mJ 0.12mJ 0.08mJ 0.04mJ =1A, T J =150 C =3A, T J =150 C =1A, T J =25 C =3A, T J =25 C 0.00mJ 0V/us 1000V/us 2000V/us 3000V/us T j, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V, = 3A, R G = 82Ω, dynamic test circuit in Fig.E ) dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E) Power Semiconductors 7 Rev. 2.6 Febr. 08
8 20V ZthJC, TRANSIENT THERMAL RESISTANCE 10 0 K/W K/W 10 2 K/W D= single pulse R,(K/W) τ, (s) R 1 R 2 C 1 =τ 1 /R 1 C 2 =τ 2 /R 2 1µs 10µs 100µs 1ms 10ms 100ms VGE, GATEEMITTER VOLTAGE 15V 10V 5V U CE =240V U CE =960V 0V 0nC 10nC 20nC 30nC Q GE, GATE CHARGE Figure 16. IGBT transient thermal resistance (D = t p / T) Q GE, GATE CHARGE Figure 17. Typical gate charge ( = 3A) 1nF 1000V 3A C, CAPACITANCE 100pF 10pF 0V 10V 20V 30V C iss C oss C rss VCE, COLLECTOREMITTER VOLTAGE 800V 600V 400V 200V 0V A ICE COLLECTOR CURRENT V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE = 0V, f = 1MHz) t p, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (V GE =15/0V, R G =82Ω, T j = 150 C, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.6 Febr. 08
9 800V 3A VGE, GATEEMITTER VOLTAGE 600V 400V 200V 1A ICE COLLECTOR CURRENT 0V t p, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (V GE =15/0V, R G =82Ω, T j = 150 C, Dynamic test circuit in Figure E) Power Semiconductors 9 Rev. 2.6 Febr. 08
10 PGTO2473 Power Semiconductors 10 Rev. 2.6 Febr. 08
11 PGTO22031 Power Semiconductors 11 Rev. 2.6 Febr. 08
12 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit ½ L σ öö DUT (Diode) L C σ C r V DC R G DUT (IGBT) ½ L σ Figure E. Dynamic test circuit Leakage inductance L σ = 180nH, Stray capacitor C σ = 40pF, Relief capacitor C r = 4nF (only for ZVT switching) Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.6 Febr. 08
13 Edition Published by Infineon Technologies AG München, Germany Infineon Technologies AG 2/18/08. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.6 Febr. 08
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
More informationIGW25T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationIGW15T120. TrenchStop Series
Low Loss IGBT in TrenchStop and Fieldstop technology Approx. 1.0V reduced V CE(sat) compared to BUP313 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop
More informationPG-TO I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationSoft Switching Series I C I F I FSM
Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200
More informationSoft Switching Series
Reverse Conducting IGBT with monolithic body diode Features: 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for T Jmax = 175 C Trench and Fieldstop
More informationSGP20N60 SGW20N60. Fast IGBT in NPT-technology
Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for
More informationTrenchStop Series I C
Low Loss IGBT in TrenchStop and Fieldstop technology Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5µs Designed for : Freuency Converters Uninterrupted
More information60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current
Reverse Conducting IGBT with monolithic body diode Features: 1.5V typical saturation voltage of IGBT Trench and Fieldstop technology for 900 V applications offers : very tight parameter distribution high
More informationTrenchStop Series. P t o t 270 W
Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10 s Designed for : Frequency Converters Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications
More informationSGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07
Fast IGBT in NPT-technology Lower E off compared to previous generation Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationSKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
More informationI C P tot 138 W
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation C Short circuit withstand time 10 µs Designed for operation above 30 khz G E NPT-Technology for 600V applications offers:
More informationSGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation Short circuit withstand time 10 µs Designed for operation above 30 khz G C E NPT-Technology for 600V applications offers:
More informationIKW40N120T2 TrenchStop 2 nd Generation Series
Low Loss DuoPack : IGBT in 2 nd generation TrenchStop with soft, fast recovery antiparallel Emitter Controlled Diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency Converters
More informationI C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
More informationSKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More informationLow Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short
More informationSKP10N60 SKB10N60, SKW10N60
Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed
More informationTrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175
More informationTRENCHSTOP Series. Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology. Maximum Ratings Parameter Symbol Value Unit.
Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for : Freuency Converters
More informationIKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Features: Automotive AEC Q101 ualified Designed for DC/AC converters
More informationIGD06N60T q. IGBT in TRENCHSTOP and Fieldstop technology. TRENCHSTOP Series. IFAG IPC TD VLS 1 Rev. 2.2,
Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s TRENCHSTOP and Fieldstop technology
More informationTRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldsto technology with soft, fast recovery antiarallel Emitter Controlled HE diode Features Very low V CE(sat) 1.5V (ty.) Maximum Junction Temerature 175 C Short
More informationSGP20N60, SGB20N60, SGW20N60
SGP2N6, SGB2N6, SGW2N6 Fast SIGBT in NPTTechnology 75 % lower E off compared to previous generation combined with low conduction losses Short circuit withstand time µs Designed for moderate and high frequency
More informationSGP30N60, SGB30N60, SGW30N60
SGPN6, SGBN6, SGWN6 Fast SIGBT in NPTTechnology 75 % lower E off compared to previous generation combined with low conduction losses Short circuit withstand time µs Designed for moderate and high frequency
More informationIDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching Diode Features 1200 V diode technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Product Summary V RRM 1200 V I F 30 V F 1.65 V T jmax 150 C PGTO2202 Easy
More informationSPP08P06P H. SIPMOS Power-Transistor V DS -60 V I D T C = 25 C T C = 100 C. I D puls E AS I D = -8.8 A, V DD = -25 V, R GS = 25 W
H SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on).3
More informationCoolMOS TM Power Transistor
IPW6R125CP CoolMOS TM Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.125 Ω Q g,typ 53 nc High peak
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified
More informationProduct Summary Drain source voltage. Lead free Yes I D. I D puls -320 E AS. P tot 340 W
SPB8P6P G SIPMOS PowerTransistor Features PChannel Enhancement mode valanche rated dv/dt rated 175 C operating temperature Pbfree lead plating: RoHS compliant Halogenfree according to IEC61249221 Qualified
More informationOptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationOptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features Lowest figure of merit R ON x Q g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @T jmax 55 V R DS(on),max.52 Ω Q g,typ 13 nc High peak current capability
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible
More informationCoolMOS Power Transistor
IPP9R1K2C3 CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationOptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
More informationOptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
More informationRev Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS SmallSignalTransistor Feature NChannel Enhancement mode Logic Level dv/dt rated Pbfree lead plating; RoHS compliant Qualified according to EC Q Product Summary V DS V R DS(on) 6 Ω I D.37 PGSOT3
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for industrial applications Pb-free lead plating; RoHS
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationOptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 25 C.29 Ω Q g,typ 88 nc Qualified
More informationOptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features Worldwide best R DS,on in TO22 Lowest figure of merit R ON x Q g Ultra low gate charge Product Summary V DS @T jmax 55 V R DS(on),max.14 Ω Q g,typ 48 nc Extreme dv/dt
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationOptiMOS TM Power-Transistor
Type BSC14N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target
More informationOptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
More informationProduct Summary Drain source voltage. Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 2 W Continuous
More informationOptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationOptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
More informationOptiMOS TM Power-MOSFET
BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (
More informationBSS123. Rev K/W. R thja
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25
More informationOptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
More informationOptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
More informationOptiMOS TM Power-MOSFET
BSC1NE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance N-channel Qualified
More informationBSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
More informationOptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
More informationOptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
More informationBAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw
Silicon Low Leakage Diode Array Lowleakage applications Medium speed switching times Pbfree (RoHS compliant) package 1) Qualified according AEC Q11 BAV17!,, Type Package Configuration Marking BAV17 SOT23
More informationOptiMOS TM P3 Power-Transistor
BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications
More informationCoolMOS TM Power Transistor
SPP15N6CFD CoolMOS TM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Product
More informationOptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
More informationOptiMOS 2 Power-Transistor
BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
More informationProduct Summary Drain source voltage V DS -60 V Drain-source on-state resistance R DS(on) 8 W Continuous drain current I D A
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Product Summary Drain source voltage V DS 6 V Drainsource onstate resistance R DS(on) 8 W Continuous
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
More informationIDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology
Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 1 V R DS(on),max 12 Ω I DSS,min.9 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 6 V R DS(on),max 8 Ω I DSS,min.13 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More informationOptiMOS Power-Transistor
OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
More informationOptiMOS P2 Small-Signal-Transistor
OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
More informationPG-TO220FP P G-TO262 PG-TO220. Maximum Ratings Parameter Symbol Value Unit
SPP21N5C3 SPI21N5C3, SP21N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).19 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 22 I D 21 Ultra low gate charge
More informationOptiMOS 3 M-Series Power-MOSFET
BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R
More informationSPP20N60S5. Cool MOS Power Transistor V DS 600 V
SPPN6S Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationData Sheet BUY25CS54A-01
HiRel RadHard Power-MOS Low R DS(on) Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm V GS = -10V, V DS = 250V V GS = -15V, V DS = 250V V GS = -15V, V DS = 120V V GS = -20V,
More informationOptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
More informationDual N-Channel OptiMOS MOSFET
Dual N-Channel OptiMOS MOSFET Features Dual N-channel OptiMOS MOSFET Optimized for high performance Buck converter Logic level (4.5V rated) 1% avalanche tested Qualified according to JEDEC 1) for target
More informationOptiMOS TM Power-MOSFET
BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 W Q g,typ 1 nc Qualified
More information