SGP20N60, SGB20N60, SGW20N60

Transcription

1 SGP2N6, SGB2N6, SGW2N6 Fast SIGBT in NPTTechnology 75 % lower E off compared to previous generation combined with low conduction losses Short circuit withstand time µs Designed for moderate and high frequency applications: SMPS and PFC up to 15 khz Inverter, Motor controls NPTTechnology for 6V applications offers: tighter parameter distribution higher ruggedness, temperature stable behaviour parallel switching capability Type V CE I C V CE(sat) T j Package Ordering Code SGP2N6 SGB2N6 SGW2N6 6 V V 15 C TO22B TO263B TO247C Q Q Q674S4236 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 6 V DC collector current T C = 25 C T C = C I C 4 2 Pulsed collector current, t p limited by T jmax I Cpuls 8 Gateemitter voltage V GE ±2 V valanche energy, single pulse I C = 2, V CC = 5 V, R GE = 25 Ω, start at T j = 25 C Short circuit withstand time 1) V GE = 15 V, V CC = 6 V, T j 15 C Power dissipation T C = 25 C E S 115 mj t sc µs P tot 178 W Operating junction and storage temperature T j, T stg C Soldering temperature, 1.6mm from case for s 26 1) allowed number of short circuits: <; time between short circuits: >1s Semiconductor Group 1

2 SGP2N6, SGB2N6, SGW2N6 Thermal Resistance Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc.7 K/W Thermal resistance, junction ambient R thj TO22B TO247C 62 4 SMD version, device on PCB: 1) TO263B R thj 4 Electrical Characteristics, at T j =25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Collectoremitter breakdown voltage V GE = V, I C = 5 µ V (BR)CES 6 V Collectoremitter saturation voltage V GE = 15 V, I C = 2, T j = 25 C V GE = 15 V, I C = 2, T j = 15 C Gateemitter threshold voltage I C = 3 µ, V CE = V GE V CE(sat) V GE(th) Zero gate voltage collector current V CE = 6 V, V GE = V, T j = 25 C V CE = 6 V, V GE = V, T j = 15 C Gateemitter leakage current V GE = 2 V, V CE = V I CES µ 4 25 I GES n 1) Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7 µm thick) copper area for collector connection. PCB is vertical without blown air. Semiconductor Group 2

3 SGP2N6, SGB2N6, SGW2N6 Electrical Characteristics, at T j =25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Transconductance g fs 14 S V CE = 2 V, I C = 2 Input capacitance C iss pf V CE = 25 V, V GE = V, f = 1 MHz Output capacitance C oss V CE = 25 V, V GE = V, f = 1 MHz Reverse transfer capacitance V CE = 25 V, V GE = V, f = 1 MHz C rss Characteristics Gate charge V CC = 48 V, V GE = 15 V, I C = 2 Internal emitter inductance measured 5mm from case Q Gate 13 nc L E 7 nh Safe Operating rea Characteristics Short circuit collector current 1) V CE 6 V, V GE = 15 V, t sc µs, T j 15 C Turn off safe operating area V CE 6 V, T j 15 C 2 8 1) allowed number of short circuits: <; time between short circuits: >1s Semiconductor Group 3

4 SGP2N6, SGB2N6, SGW2N6 Switching Characteristics, Inductive Load (Diode:BUP62D), at T j = 25 C Parameter Symbol Values Unit min. typ. max. Characteristics Turnon delay time t d(on) ns V CC = 4 V, V GE = 15 V, I C = 2, R Gon = 16 Ω Rise time t r V CC = 4 V, V GE = 15 V, I C = 2, R Gon = 16 Ω Turnoff delay time t d(off) V CC = 4 V, V GE = V, I C = 2, R Goff = 16 Ω Fall time t f V CC = 4 V, V GE = V, I C = 2, R Goff = 16 Ω Turnon energy 1) E on.87 1 mj V CC = 4 V, V GE = 15 V, I C = 2, R Gon = 16 Ω Turnoff energy E off V CC = 4 V, V GE = V, I C = 2, R Goff = 16 Ω Total switching energy 1) V CC = 4 V, V GE = /+15 V, I C = 2, R G = 16 Ω E ts ) E on and E ts include BUP62D diode commutation losses. Semiconductor Group 4

5 SGP2N6, SGB2N6, SGW2N6 Switching Characteristics, Inductive Load (Diode: BUP62D), at T j = 15 C Parameter Symbol Values Unit min. typ. max. Characteristics Turnon delay time t d(on) ns V CC = 4 V, V GE = 15 V, I C = 2, R Gon = 16 Ω Rise time t r V CC = 4 V, V GE = 15 V, I C = 2, R Gon = 16 Ω Turnoff delay time t d(off) 25 3 V CC = 4 V, V GE = V, I C = 2, R Goff = 16 Ω Fall time t f V CC = 4 V, V GE = V, I C = 2, R Goff = 16 Ω Turnon energy 1) E on mj V CC = 4 V, V GE = 15 V, I C = 2, R Gon = 16 Ω Turnoff energy E off V CC = 4 V, V GE = V, I C = 2, R Goff = 16 Ω Total switching energy 1) V CC = 4 V, V GE = /+15 V, I C = 2, R G = 16 Ω E ts ) E on and E ts include BUP62D diode commutation losses. Semiconductor Group 5

6 SGP2N6, SGB2N6, SGW2N6 Typ. collector current I C = f (f) parameter: D =.5, T j 15 C Safe operating area I C = f (V CE ) parameter: D =, T C = 25 C, T j 15 C T C = 8 C T C = 1 C 2 t p = 4µs 15µs IC 6 5 T C = 8 C IC 1 5µs 2µs 4 T C = 1 C 1ms 3 DC 2 1 square wave peak current triangle wave peak current Hz 6 Power dissipation P tot = f (T C ) parameter: T j 15 C Ptot 19 W SGP2N C 16 f T C V 4 V CE Collector current I C = f (T C ) parameter: V GE 15 V, T j 15 C IC C 16 T C Semiconductor Group 6

7 SGP2N6, SGB2N6, SGW2N6 Typ. output characteristics I C = f (V CE ) parameter: t p = 8 µs, T j = 25 C 65 Typ. output characteristics I C = f (V CE ) parameter: t p = 8 µs, T j = 15 C IC V 15V 13V 11V 9V 7V 5V IC V 15V 13V 11V 9V 7V 5V V V 5 V CE V CE Typ. transfer characteristics I C = f (V GE ) parameter: t p = 8 µs, V CE = V 5 Gateemitter threshold voltage V GE(th) = f (T j ) parameter: C I =.3 m 6. IC C VGE(th) V max typ. min V V GE C 16 T j Semiconductor Group 7

8 t t Preliminary data SGP2N6, SGB2N6, SGW2N6 Typ. switching time t = f (I C ), inductive load, T j = 15 C par.: V CE = 4 V, V GE = /+15 V, R G = 16 Ω 3 Typ. switching time t = f (R G ), inductive load, T j = 15 C par.: V CE = 4 V, V GE = /+15 V, I C = 2 3 t d(off) ns t d(off) ns 2 t f 2 t f t r t r t d(on) t d(on) Typ. switching time t = f (T j ), inductive load, V CE = 4 V V GE = /+15 V, I C = 2, R G = 16 Ω 3 I C Ω 6 R G Typ. collectoremitter saturation voltage V CEsat = f (T j ) parameter: V GE = 15 V 4. V ns t t d(off) VCE(sat) 3. I C = t f t r 2. I C = 2 t d(on) C 16 T j C 16 T j Semiconductor Group 8

9 SGP2N6, SGB2N6, SGW2N6 Typ. switching losses E = f (I C ), inductive load, T j = 15 C par.: V CE = 4 V, V GE = /+15V, R G = 16 Ω Typ. switching losses E = f (R G ), inductive load, T j = 15 C par.: V CE = 4 V, V GE = /+15 V, I C = 2 mws 4.5 *) E on and E ts include BUP62D diode commutation losses. E ts * 3. mws *) E on and E ts include BUP62D diode commutation losses E on * E ts * E E E on * E off.8.6 E off Ω 6 I C R G Typ. switching losses E = f (T j ), inductive load, V CE = 4 V, V GE = /+15 V, I C = 2, R G = 16 Ω Transient thermal impedance Z thjc = f(t p ) parameter: D = t p / T mws 2. *) E on and E ts include BUP62D diode commutation losses. 1 K/W 1.6 E E ts * ZthJC E on * 2 3 single pulse D= E off C 16 T j s t p Semiconductor Group 9

10 SGP2N6, SGB2N6, SGW2N6 Typ. gate charge Typ. capacitances V GE = f (Q Gate ) C = f (V CE ) parameter: I C = 2 parameter: V GE = V, f = 1 MHz 25 4 V 12 V 48 V pf VGE 15 C 3 C iss 2 C oss 5 C rss nc 15 Q Gate Short circuit withstand time t sc = f (V GE ) par.: V CE = 6 V, start at T j = 25 C V 4 V CE Typ. short circuit current I Csc = f (V GE ) par.: V CE 6 V, T C = 25 C, T j 15 C 35 µs 25 tsc 15 ICsc V V 2 V GE V GE Semiconductor Group

11 SGP2N6, SGB2N6, SGW2N6 TO22B dimensions [mm] symbol min max B C D E F G H K L M 2.54 typ. N P T TO263B dimensions [mm] symbol min max B C D E F typ..85 G H typ. 4.5 K L M N P. 15 typ..2 Q R S max 3. T.4.6 U V W X Y Z Semiconductor Group 11

12 SGP2N6, SGB2N6, SGW2N6 Edition Published by Siemens G, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, München Siemens G 1997 ll Rights Reserved. ttention please! s far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens G is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in lifesupport devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens G, may only be used in lifesupport devices or systems2 with the express written approval of the Semiconductor Group of Siemens G. 1) critical component is a component used in a lifesupport device or system whose failure can reasonably be expected to cause the failure of that lifesupport device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 12