Power converters Easy paralleling. Industrial motor drives Extremely fast switching not dependent on temperature

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1 Description United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. Gen-III 5-12 SiC Schottky Diode UJ3D125K. CSE 2(CSE) Part Number Package Marking UJ3D125K TO-247-3L UJ3D125K Features Typical pplications 175 maximum operating junction temperature Power converters Easy paralleling Industrial motor drives Extremely fast switching not dependent on temperature Switching-mode power supplies No reverse or forward recovery Power factor correction modules Enhanced surge current capability, MPS structure EC-Q11 qualified Maximum Ratings Repetitive forward surge current sine halfwave, D=.1 Non-repetitive peak forward current Power dissipation Parameter DC blocking voltage Repetitive peak reverse voltage, T j =25 Surge peak reverse voltage Maximum DC forward current Non-repetitive forward surge current sine halfwave Non-repetitive avalanche energy Maximum junction temperature Operating and storage temperature Soldering temperatures, wavesoldering only allowed at leads Symbol R RRM RSM I F I FSM I FRM I F,max Test Conditions T C = 112 T C = 25, t p = 1ms T C = 25, t p = 1ms T C = 11, t p =1ms 99.6 T C = 25, t p =1ms T C = 11, t p =1ms T E j = 25, L = 1mH, S Ipk=9.17, DD =1 T C = 25 P Tot T C = 112 alue T J,max 175 T J, T STG -55 to T 1.6mm from case for sold 26 1s 5 mj W Rev., July For more information go to

2 Forward Current, I F () Forward Current, I F () Electrical Characteristics Gen-III 5-12 SiC Schottky Diode UJ3D125K. T J = +25 unless otherwise specified Forward voltage Reverse current Total capacitive charge (1) Total capacitance Capacitance stored energy Min Typ Max Q C R =8 24 nc C R =1, f=1mhz R =4, f=1mhz R =8, f=1mhz pf E C R =8 72 mj (1) Q c is independent on T j, di F /dt, and I F as shown in the application note USCi_N11. Thermal characteristics Parameter Symbol Test Conditions F I R I F = 5, T J = 25 I F = 5, T J =15 I F = 5, T J =175 R =12, T j =25 R =12, T J =175 alue m Parameter Thermal resistance, junction - case alue symbol Test Conditions Min Typ Max R qjc /W Typical Performance Forward oltage, F () Forward oltage, F () Figure 1 Typical forward characteristics Figure 2 Typical forward characteristics in surge current Rev., July For more information go to

3 Forward Current,I F () Max. Thermal Impedance, Z qjc (/W) Reverse Current, I R () Power Disspiation, P Tot (W) Gen-III 5-12 SiC Schottky Diode UJ3D125K. 1.E E E E E E T C () Figure 3 Typical reverse characteristics Figure 4 Power dissipation D =.1 D =.3 D =.5 D =.7 D = D =.5 D =.3 D =.1 D =.5 D =.2 Single Pulse T C ().1 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Time, t (s) Figure 5 Diode forward current Figure 6 Maximum transient thermal impedance Rev., July For more information go to

4 E C (mj) Capacitance, C (pf) Q C (nc) Gen-III 5-12 SiC Schottky Diode UJ3D125K Q C = R C d Figure 7 Capacitance vs. reverse voltage at 1MHz Figure 8 Typical capacitive charge vs. reverse voltage Figure 9 Typical capacitance stored energy vs. reverse voltage Rev., July For more information go to

5 Disclaimer Gen-III 5-12 SiC Schottky Diode UJ3D125K. United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev., July For more information go to